JP2010539443A - ガスの化学組成を同定するための方法および装置 - Google Patents

ガスの化学組成を同定するための方法および装置 Download PDF

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JP2010539443A
JP2010539443A JP2010520234A JP2010520234A JP2010539443A JP 2010539443 A JP2010539443 A JP 2010539443A JP 2010520234 A JP2010520234 A JP 2010520234A JP 2010520234 A JP2010520234 A JP 2010520234A JP 2010539443 A JP2010539443 A JP 2010539443A
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plasma
gas
power
chamber
emission
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JP2010539443A5 (enExample
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ジョゼフ アール． モンコウスキー
バートン レーン
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ピヴォタル システムズ コーポレーション
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/66—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence
    • G01N21/68—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light electrically excited, e.g. electroluminescence using high frequency electric fields
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N7/00—Analysing materials by measuring the pressure or volume of a gas or vapour

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
JP2010520234A 2007-08-07 2008-08-01 ガスの化学組成を同定するための方法および装置 Pending JP2010539443A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US96397407P 2007-08-07 2007-08-07
US2045708P 2008-01-11 2008-01-11
PCT/US2008/072008 WO2009020881A1 (en) 2007-08-07 2008-08-01 Method and apparatus for identifying the chemical composition of a gas

Publications (2)

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JP2010539443A true JP2010539443A (ja) 2010-12-16
JP2010539443A5 JP2010539443A5 (enExample) 2011-09-15

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JP2010520234A Pending JP2010539443A (ja) 2007-08-07 2008-08-01 ガスの化学組成を同定するための方法および装置

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US (2) US7940395B2 (enExample)
EP (1) EP2185909A4 (enExample)
JP (1) JP2010539443A (enExample)
KR (1) KR20100065321A (enExample)
CN (1) CN101784878B (enExample)
TW (1) TWI396224B (enExample)
WO (1) WO2009020881A1 (enExample)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
JP2013245989A (ja) * 2012-05-24 2013-12-09 Ihi Corp 物質特定装置および物質特定方法
KR101791870B1 (ko) * 2013-02-19 2017-11-02 세메스 주식회사 검사 방법, 이를 포함하는 기판 처리 방법 및 기판 처리 장치
JP2020136473A (ja) * 2019-02-19 2020-08-31 株式会社東芝 半導体装置の製造方法
KR20220044880A (ko) * 2019-03-25 2022-04-11 아토나프 가부시키가이샤 가스 분석 장치 및 가스 분석 장치의 제어 방법

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US8716655B2 (en) * 2009-07-02 2014-05-06 Tricorntech Corporation Integrated ion separation spectrometer
US20120129318A1 (en) * 2010-11-24 2012-05-24 Semiconductor Energy Laboratory Co., Ltd. Atmospheric pressure plasma etching apparatus and method for manufacturing soi substrate
US8440473B2 (en) * 2011-06-06 2013-05-14 Lam Research Corporation Use of spectrum to synchronize RF switching with gas switching during etch
US8609548B2 (en) 2011-06-06 2013-12-17 Lam Research Corporation Method for providing high etch rate
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
CA3000982A1 (en) * 2014-10-10 2016-04-14 Orthobond, Inc. Method for detecting and analzying surface films
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
US10504720B2 (en) 2016-11-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Etching using chamber with top plate formed of non-oxygen containing material
US10983538B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
WO2018217466A2 (en) * 2017-05-25 2018-11-29 Applied Materials, Inc. Measuring concentrations of radicals in semiconductor processing
US20220093428A1 (en) * 2020-09-21 2022-03-24 Applied Materials, Inc. Atomic oxygen detection in semiconductor processing chambers

Citations (7)

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JPS60247924A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd エツチングモニタ−方法
JPH08218186A (ja) * 1995-02-10 1996-08-27 Sci Technol Kk 気相エッチング装置及び気相エッチング方法
JPH11102895A (ja) * 1997-09-29 1999-04-13 Fujitsu Ltd 半導体装置の製造方法
JP2002093781A (ja) * 2000-09-12 2002-03-29 Hitachi Ltd プラズマ処理装置及び処理方法
JP2002525867A (ja) * 1998-09-24 2002-08-13 アプライド マテリアルズ インコーポレイテッド 非イオン化ガスのリアクター環境における終点を検出するための装置及び方法
JP2002270574A (ja) * 2001-03-07 2002-09-20 Hitachi Kokusai Electric Inc プラズマエッチング装置
JP2007501534A (ja) * 2003-05-22 2007-01-25 アクセリス テクノロジーズ インコーポレーテッド プラズマアッシング装置及び終了点検出プロセス

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US5405488A (en) * 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
US5711843A (en) * 1995-02-21 1998-01-27 Orincon Technologies, Inc. System for indirectly monitoring and controlling a process with particular application to plasma processes
AU6116400A (en) * 1999-07-23 2001-02-13 Philip C. Efthimion A continuous emissions monitor of multiple metal species in harsh environments
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
CN1153056C (zh) * 2001-04-10 2004-06-09 华邦电子股份有限公司 以光学方法测量温度并监控蚀刻率的方法
KR100426988B1 (ko) * 2001-11-08 2004-04-14 삼성전자주식회사 반도체 제조장비의 식각 종말점 검출장치 및 그에 따른검출방법
US20030129117A1 (en) * 2002-01-02 2003-07-10 Mills Randell L. Synthesis and characterization of a highly stable amorphous silicon hydride as the product of a catalytic hydrogen plasma reaction
US8580076B2 (en) * 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
DE602004009341D1 (de) * 2003-07-25 2007-11-15 Lightwind Corp Verfahren und vorrichtung zur überwachung chemischer prozesse
US7053994B2 (en) * 2003-10-28 2006-05-30 Lam Research Corporation Method and apparatus for etch endpoint detection
JP4849875B2 (ja) * 2005-11-17 2012-01-11 東京エレクトロン株式会社 プラズマエッチング方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247924A (ja) * 1984-05-23 1985-12-07 Hitachi Ltd エツチングモニタ−方法
JPH08218186A (ja) * 1995-02-10 1996-08-27 Sci Technol Kk 気相エッチング装置及び気相エッチング方法
JPH11102895A (ja) * 1997-09-29 1999-04-13 Fujitsu Ltd 半導体装置の製造方法
JP2002525867A (ja) * 1998-09-24 2002-08-13 アプライド マテリアルズ インコーポレイテッド 非イオン化ガスのリアクター環境における終点を検出するための装置及び方法
JP2002093781A (ja) * 2000-09-12 2002-03-29 Hitachi Ltd プラズマ処理装置及び処理方法
JP2002270574A (ja) * 2001-03-07 2002-09-20 Hitachi Kokusai Electric Inc プラズマエッチング装置
JP2007501534A (ja) * 2003-05-22 2007-01-25 アクセリス テクノロジーズ インコーポレーテッド プラズマアッシング装置及び終了点検出プロセス

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013245989A (ja) * 2012-05-24 2013-12-09 Ihi Corp 物質特定装置および物質特定方法
KR101791870B1 (ko) * 2013-02-19 2017-11-02 세메스 주식회사 검사 방법, 이를 포함하는 기판 처리 방법 및 기판 처리 장치
JP2020136473A (ja) * 2019-02-19 2020-08-31 株式会社東芝 半導体装置の製造方法
KR20220044880A (ko) * 2019-03-25 2022-04-11 아토나프 가부시키가이샤 가스 분석 장치 및 가스 분석 장치의 제어 방법
KR102724713B1 (ko) 2019-03-25 2024-10-30 아토나프 가부시키가이샤 가스 분석 장치 및 가스 분석 장치의 제어 방법

Also Published As

Publication number Publication date
KR20100065321A (ko) 2010-06-16
TWI396224B (zh) 2013-05-11
WO2009020881A1 (en) 2009-02-12
TW200917330A (en) 2009-04-16
CN101784878A (zh) 2010-07-21
US20110177625A1 (en) 2011-07-21
US7940395B2 (en) 2011-05-10
US8237928B2 (en) 2012-08-07
US20090180113A1 (en) 2009-07-16
CN101784878B (zh) 2012-08-08
EP2185909A1 (en) 2010-05-19
EP2185909A4 (en) 2015-08-05

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