TWI394945B - 圖案瑕疵檢查方法、圖案瑕疵檢查用測試圖案基板及圖案瑕疵檢查裝置、以及光罩之製造方法、顯示裝置用基板之製造方法 - Google Patents

圖案瑕疵檢查方法、圖案瑕疵檢查用測試圖案基板及圖案瑕疵檢查裝置、以及光罩之製造方法、顯示裝置用基板之製造方法 Download PDF

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Publication number
TWI394945B
TWI394945B TW096121312A TW96121312A TWI394945B TW I394945 B TWI394945 B TW I394945B TW 096121312 A TW096121312 A TW 096121312A TW 96121312 A TW96121312 A TW 96121312A TW I394945 B TWI394945 B TW I394945B
Authority
TW
Taiwan
Prior art keywords
pattern
test
overlapping
repeating
unit
Prior art date
Application number
TW096121312A
Other languages
English (en)
Chinese (zh)
Other versions
TW200804796A (en
Inventor
Noboru Yamaguchi
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200804796A publication Critical patent/TW200804796A/zh
Application granted granted Critical
Publication of TWI394945B publication Critical patent/TWI394945B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Data Mining & Analysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096121312A 2006-06-15 2007-06-13 圖案瑕疵檢查方法、圖案瑕疵檢查用測試圖案基板及圖案瑕疵檢查裝置、以及光罩之製造方法、顯示裝置用基板之製造方法 TWI394945B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006166409A JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法

Publications (2)

Publication Number Publication Date
TW200804796A TW200804796A (en) 2008-01-16
TWI394945B true TWI394945B (zh) 2013-05-01

Family

ID=38933199

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121312A TWI394945B (zh) 2006-06-15 2007-06-13 圖案瑕疵檢查方法、圖案瑕疵檢查用測試圖案基板及圖案瑕疵檢查裝置、以及光罩之製造方法、顯示裝置用基板之製造方法

Country Status (3)

Country Link
JP (1) JP4771871B2 (enExample)
KR (1) KR101232209B1 (enExample)
TW (1) TWI394945B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010019639A (ja) * 2008-07-09 2010-01-28 Lasertec Corp ムラ検出装置及びパターン検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
KR102000081B1 (ko) * 2017-09-19 2019-07-17 세메스 주식회사 다이를 검사하기 위한 다이 스테이지 유닛 및 이를 구비하는 다이 본딩 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200407966A (en) * 2002-08-30 2004-05-16 Toshiba Kk Inspection method for exposure device and the exposure device
TW200602616A (en) * 2004-05-28 2006-01-16 Hoya Corp Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask
US6990225B2 (en) * 2001-04-26 2006-01-24 Kabushiki Kaisha Toshiba Inspection method of photo mask for use in manufacturing semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112934U (ja) * 1983-12-29 1984-07-30 富士通株式会社 パタ−ン照合検査機
JPH07198618A (ja) * 1993-12-28 1995-08-01 Toshiba Corp パターン欠陥検査装置
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
JP2001117213A (ja) * 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
JP2001305071A (ja) * 2000-04-21 2001-10-31 Nikon Corp 欠陥検査装置
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
JP4480002B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法
JP4480009B2 (ja) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6990225B2 (en) * 2001-04-26 2006-01-24 Kabushiki Kaisha Toshiba Inspection method of photo mask for use in manufacturing semiconductor device
TW200407966A (en) * 2002-08-30 2004-05-16 Toshiba Kk Inspection method for exposure device and the exposure device
TW200602616A (en) * 2004-05-28 2006-01-16 Hoya Corp Mura defect inspection mask, apparatus and method of inspecting the mura defect, and method of producing a photomask

Also Published As

Publication number Publication date
JP2007333590A (ja) 2007-12-27
KR20070119512A (ko) 2007-12-20
JP4771871B2 (ja) 2011-09-14
TW200804796A (en) 2008-01-16
KR101232209B1 (ko) 2013-02-12

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