JP4771871B2 - パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法 - Google Patents

パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法 Download PDF

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Publication number
JP4771871B2
JP4771871B2 JP2006166409A JP2006166409A JP4771871B2 JP 4771871 B2 JP4771871 B2 JP 4771871B2 JP 2006166409 A JP2006166409 A JP 2006166409A JP 2006166409 A JP2006166409 A JP 2006166409A JP 4771871 B2 JP4771871 B2 JP 4771871B2
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JP
Japan
Prior art keywords
pattern
defect inspection
test
inspection method
repetitive
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006166409A
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English (en)
Japanese (ja)
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JP2007333590A (ja
JP2007333590A5 (enExample
Inventor
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2006166409A priority Critical patent/JP4771871B2/ja
Priority to KR1020070057140A priority patent/KR101232209B1/ko
Priority to TW096121312A priority patent/TWI394945B/zh
Publication of JP2007333590A publication Critical patent/JP2007333590A/ja
Publication of JP2007333590A5 publication Critical patent/JP2007333590A5/ja
Application granted granted Critical
Publication of JP4771871B2 publication Critical patent/JP4771871B2/ja
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Data Mining & Analysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2006166409A 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法 Expired - Fee Related JP4771871B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006166409A JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法
KR1020070057140A KR101232209B1 (ko) 2006-06-15 2007-06-12 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법
TW096121312A TWI394945B (zh) 2006-06-15 2007-06-13 圖案瑕疵檢查方法、圖案瑕疵檢查用測試圖案基板及圖案瑕疵檢查裝置、以及光罩之製造方法、顯示裝置用基板之製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006166409A JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法

Publications (3)

Publication Number Publication Date
JP2007333590A JP2007333590A (ja) 2007-12-27
JP2007333590A5 JP2007333590A5 (enExample) 2008-12-25
JP4771871B2 true JP4771871B2 (ja) 2011-09-14

Family

ID=38933199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006166409A Expired - Fee Related JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法

Country Status (3)

Country Link
JP (1) JP4771871B2 (enExample)
KR (1) KR101232209B1 (enExample)
TW (1) TWI394945B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010019639A (ja) * 2008-07-09 2010-01-28 Lasertec Corp ムラ検出装置及びパターン検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
KR102000081B1 (ko) * 2017-09-19 2019-07-17 세메스 주식회사 다이를 검사하기 위한 다이 스테이지 유닛 및 이를 구비하는 다이 본딩 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112934U (ja) * 1983-12-29 1984-07-30 富士通株式会社 パタ−ン照合検査機
JPH07198618A (ja) * 1993-12-28 1995-08-01 Toshiba Corp パターン欠陥検査装置
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
JP2001117213A (ja) * 1999-08-10 2001-04-27 Nikon Corp フォトマスク、該フォトマスクの製造方法、該フォトマスクを扱う投影露光装置、及び投影露光方法
JP2001305071A (ja) * 2000-04-21 2001-10-31 Nikon Corp 欠陥検査装置
JP4266082B2 (ja) * 2001-04-26 2009-05-20 株式会社東芝 露光用マスクパターンの検査方法
JP4005881B2 (ja) * 2002-08-30 2007-11-14 株式会社東芝 露光装置の検査方法
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4480002B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査方法及び装置、並びにフォトマスクの製造方法
JP4480009B2 (ja) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法

Also Published As

Publication number Publication date
JP2007333590A (ja) 2007-12-27
TWI394945B (zh) 2013-05-01
KR20070119512A (ko) 2007-12-20
TW200804796A (en) 2008-01-16
KR101232209B1 (ko) 2013-02-12

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