KR101232209B1 - 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 - Google Patents

패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 Download PDF

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Publication number
KR101232209B1
KR101232209B1 KR1020070057140A KR20070057140A KR101232209B1 KR 101232209 B1 KR101232209 B1 KR 101232209B1 KR 1020070057140 A KR1020070057140 A KR 1020070057140A KR 20070057140 A KR20070057140 A KR 20070057140A KR 101232209 B1 KR101232209 B1 KR 101232209B1
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South Korea
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pattern
test
polymerization
defect
repeating
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English (en)
Korean (ko)
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KR20070119512A (ko
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노보루 야마구치
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Data Mining & Analysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070057140A 2006-06-15 2007-06-12 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 Expired - Fee Related KR101232209B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00166409 2006-06-15
JP2006166409A JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法

Publications (2)

Publication Number Publication Date
KR20070119512A KR20070119512A (ko) 2007-12-20
KR101232209B1 true KR101232209B1 (ko) 2013-02-12

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Family Applications (1)

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KR1020070057140A Expired - Fee Related KR101232209B1 (ko) 2006-06-15 2007-06-12 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법

Country Status (3)

Country Link
JP (1) JP4771871B2 (enExample)
KR (1) KR101232209B1 (enExample)
TW (1) TWI394945B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010019639A (ja) * 2008-07-09 2010-01-28 Lasertec Corp ムラ検出装置及びパターン検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
KR102000081B1 (ko) * 2017-09-19 2019-07-17 세메스 주식회사 다이를 검사하기 위한 다이 스테이지 유닛 및 이를 구비하는 다이 본딩 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085778A (ko) * 1999-08-10 2001-09-07 오노 시게오 포토 마스크, 그 포토 마스크의 제조 방법, 그 포토마스크를 이용하는 투영 노광 장치 및 투영 노광 방법
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
KR20060048093A (ko) * 2004-05-28 2006-05-18 호야 가부시키가이샤 얼룩결함 검사방법 및 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112934U (ja) * 1983-12-29 1984-07-30 富士通株式会社 パタ−ン照合検査機
JPH07198618A (ja) * 1993-12-28 1995-08-01 Toshiba Corp パターン欠陥検査装置
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
JP2001305071A (ja) * 2000-04-21 2001-10-31 Nikon Corp 欠陥検査装置
JP4266082B2 (ja) * 2001-04-26 2009-05-20 株式会社東芝 露光用マスクパターンの検査方法
JP4005881B2 (ja) * 2002-08-30 2007-11-14 株式会社東芝 露光装置の検査方法
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4480009B2 (ja) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085778A (ko) * 1999-08-10 2001-09-07 오노 시게오 포토 마스크, 그 포토 마스크의 제조 방법, 그 포토마스크를 이용하는 투영 노광 장치 및 투영 노광 방법
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
KR20060048093A (ko) * 2004-05-28 2006-05-18 호야 가부시키가이샤 얼룩결함 검사방법 및 장치

Also Published As

Publication number Publication date
JP2007333590A (ja) 2007-12-27
TWI394945B (zh) 2013-05-01
KR20070119512A (ko) 2007-12-20
JP4771871B2 (ja) 2011-09-14
TW200804796A (en) 2008-01-16

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