TWI394628B - The splitting device and segmentation method of brittle material substrate - Google Patents
The splitting device and segmentation method of brittle material substrate Download PDFInfo
- Publication number
- TWI394628B TWI394628B TW097125515A TW97125515A TWI394628B TW I394628 B TWI394628 B TW I394628B TW 097125515 A TW097125515 A TW 097125515A TW 97125515 A TW97125515 A TW 97125515A TW I394628 B TWI394628 B TW I394628B
- Authority
- TW
- Taiwan
- Prior art keywords
- laser
- substrate
- laser spot
- mirror
- laser beam
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 159
- 239000000463 material Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 21
- 230000011218 segmentation Effects 0.000 title description 4
- 230000003287 optical effect Effects 0.000 claims description 88
- 230000007246 mechanism Effects 0.000 claims description 53
- 238000001816 cooling Methods 0.000 claims description 48
- 238000010438 heat treatment Methods 0.000 claims description 38
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 238000003303 reheating Methods 0.000 claims description 4
- 238000004093 laser heating Methods 0.000 description 23
- 239000011521 glass Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 11
- 239000003245 coal Substances 0.000 description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 238000000960 laser cooling Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007235832A JP5060880B2 (ja) | 2007-09-11 | 2007-09-11 | 脆性材料基板の分断装置および分断方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200911435A TW200911435A (en) | 2009-03-16 |
| TWI394628B true TWI394628B (zh) | 2013-05-01 |
Family
ID=40476174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097125515A TWI394628B (zh) | 2007-09-11 | 2008-07-07 | The splitting device and segmentation method of brittle material substrate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5060880B2 (ja) |
| KR (1) | KR101211427B1 (ja) |
| CN (1) | CN101386467B (ja) |
| TW (1) | TWI394628B (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5478957B2 (ja) * | 2009-06-30 | 2014-04-23 | 三星ダイヤモンド工業株式会社 | 脆性材料基板の割断方法 |
| US8932510B2 (en) * | 2009-08-28 | 2015-01-13 | Corning Incorporated | Methods for laser cutting glass substrates |
| KR101097324B1 (ko) | 2009-12-29 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 레이저 커팅 방법 및 유기 발광 소자의 제조방법 |
| DE102010028589A1 (de) * | 2010-05-05 | 2011-11-10 | Robert Bosch Gmbh | Verfahren zur Herstellung eines keramischen Sensorelements |
| EP2692475B1 (en) * | 2011-03-29 | 2016-06-08 | JFE Steel Corporation | Laser welding method |
| KR101250223B1 (ko) * | 2011-04-28 | 2013-04-09 | 주식회사 엠엠테크 | 레이저 절단장치용 절단 헤드 |
| KR101250225B1 (ko) * | 2011-05-03 | 2013-04-09 | 주식회사 엠엠테크 | 레이저 절단장치 및 절단방법 |
| JP2014195040A (ja) * | 2013-02-27 | 2014-10-09 | Mitsuboshi Diamond Industrial Co Ltd | Ｌｅｄ素子の製造方法、ｌｅｄ素子製造用ウェハ基材およびｌｅｄ素子の製造装置 |
| EP2980033B1 (en) * | 2013-03-26 | 2021-01-20 | AGC Inc. | Glass sheet processing method and glass sheet processing apparatus |
| CN103203554A (zh) * | 2013-04-09 | 2013-07-17 | 杨波 | 一种激光模切机 |
| CN103386549B (zh) * | 2013-04-09 | 2016-04-13 | 杨波 | 一种激光模切机的排烟气管结构 |
| DE102015104802A1 (de) * | 2015-03-27 | 2016-09-29 | Schott Ag | Verfahren zum Trennen von Glas mittels eines Lasers, sowie verfahrensgemäß hergestelltes Glaserzeugnis |
| WO2017204055A1 (ja) * | 2016-05-25 | 2017-11-30 | 三星ダイヤモンド工業株式会社 | 脆性基板の分断方法 |
| CN106077970B (zh) * | 2016-06-30 | 2018-04-20 | 维沃移动通信有限公司 | 一种电阻陶瓷基板的加工方法 |
| JP6775822B2 (ja) * | 2016-09-28 | 2020-10-28 | 三星ダイヤモンド工業株式会社 | 脆性材料基板の分断方法並びに分断装置 |
| CN107199410B (zh) * | 2017-07-25 | 2019-04-02 | 东莞市盛雄激光设备有限公司 | 一种激光切割设备及其切割方法 |
| JP6997566B2 (ja) * | 2017-09-14 | 2022-01-17 | 株式会社ディスコ | レーザー加工装置 |
| CN108393596B (zh) * | 2018-05-07 | 2024-03-01 | 王立国 | 一种双工位多功能激光裁切机 |
| WO2020130165A1 (ko) * | 2018-12-18 | 2020-06-25 | 이석준 | 취성재료의 레이저 절단 가공방법 |
| JP7323792B2 (ja) * | 2019-08-13 | 2023-08-09 | 日本製鉄株式会社 | レーザー照射装置及び鋼板の加工システム |
| CN112828474B (zh) * | 2020-12-31 | 2022-07-05 | 武汉华工激光工程有限责任公司 | 用于透明脆性材料的斜向切割补偿方法及系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03285786A (ja) * | 1990-03-30 | 1991-12-16 | Toshiba Corp | レーザ加工装置 |
| TW583046B (en) * | 2001-08-10 | 2004-04-11 | Mitsuboshi Diamond Ind Co Ltd | Method and device for scribing brittle material substrate |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100673073B1 (ko) * | 2000-10-21 | 2007-01-22 | 삼성전자주식회사 | 레이저 빔을 이용한 비금속 기판의 절단 방법 및 장치 |
| JPWO2003008168A1 (ja) * | 2001-07-16 | 2004-11-04 | 三星ダイヤモンド工業株式会社 | 脆性材料基板のスクライブ装置 |
| KR100794284B1 (ko) * | 2001-09-29 | 2008-01-11 | 삼성전자주식회사 | 비금속 기판 절단 방법 |
| JP3887394B2 (ja) * | 2004-10-08 | 2007-02-28 | 芝浦メカトロニクス株式会社 | 脆性材料の割断加工システム及びその方法 |
| JP2007099587A (ja) * | 2005-10-07 | 2007-04-19 | Kyoto Seisakusho Co Ltd | 脆性材料の割断加工方法 |
-
2007
- 2007-09-11 JP JP2007235832A patent/JP5060880B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-07 TW TW097125515A patent/TWI394628B/zh not_active IP Right Cessation
- 2008-07-22 KR KR1020080070920A patent/KR101211427B1/ko not_active IP Right Cessation
- 2008-09-10 CN CN2008102151778A patent/CN101386467B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03285786A (ja) * | 1990-03-30 | 1991-12-16 | Toshiba Corp | レーザ加工装置 |
| TW583046B (en) * | 2001-08-10 | 2004-04-11 | Mitsuboshi Diamond Ind Co Ltd | Method and device for scribing brittle material substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200911435A (en) | 2009-03-16 |
| KR20090027139A (ko) | 2009-03-16 |
| JP2009066613A (ja) | 2009-04-02 |
| JP5060880B2 (ja) | 2012-10-31 |
| CN101386467A (zh) | 2009-03-18 |
| KR101211427B1 (ko) | 2012-12-12 |
| CN101386467B (zh) | 2012-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |