TWI394284B - 具懸浮島之通道阻障蕭特基（ｊｂｓ）二極體 - Google Patents

具懸浮島之通道阻障蕭特基（ｊｂｓ）二極體 Download PDF

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TWI394284B
TWI394284B TW096140379A TW96140379A TWI394284B TW I394284 B TWI394284 B TW I394284B TW 096140379 A TW096140379 A TW 096140379A TW 96140379 A TW96140379 A TW 96140379A TW I394284 B TWI394284 B TW I394284B
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trench
schottky
schottky barrier
semiconductor substrate
schottky diode
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TW200826303A (en
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Pan Ji
Bhalla Anup
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Alpha & Omega Semiconductor
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Description

具懸浮島之通道阻障蕭特基(JBS)二極體
本發明係有關一種半導體功率裝置，特別是指一種改良且新穎性的製造方法與裝置架構，以提供一具有遮蔽溝渠閘極之MOSFET裝置，其晶胞具備有蕭特基源極接觸，以改良高頻率功率開關、橋式電路與同步整流的運作。
隨著蕭特基二極體(Schottky diode)的應用越來越廣泛，特別是在減少功率消耗與增加開關速度上，鑑此改善此裝置的架構與製作過程，以減少生產蕭特基整流裝置的成本成為相當重要。其中一特別重要的考慮是減少與蕭特基二極體接和之半導體基底的表面區域。減少使用蕭特基二極體之表面區域提供一個減少製成成本的關鍵並且更使電子裝置的尺寸與形狀微小化，以達到提高可攜式性與功能性。然而在維持電流接觸區域與達到這個表面使用目標的情況下，蕭特基二極體有時會藉由於溝渠(trench)內填入阻障材料來施行。這溝渠蕭特基二極體之架構引起另一個技術上的困難點，由於運作上的限制，其包含有需要高正向電壓(VF)、低承受崩潰電壓(BV)與高漏電流(Idss)。這些運作上的限制經常引起廣泛應用接面阻障蕭特基(JBS,junction barrier schottky)的困難。
在許多應用上，蕭特基二極體已經被用來取代PN二極體。在正向傳導模組中，蕭特基的低正向下降(drop)縮小裝置的功率消耗。蕭特基的傳導是透過主要載體，所以少數載體電荷儲存的效用不會對裝置開關上的特性產生影響。因此，在許多功率上的應用，蕭特基二極體是較PN接面二極體顯得較優異。第1A圖係顯示出一典型的蕭特基二極體的架構，其中蕭特基之阻障金屬是與n型矽接觸。P+接面是 位於阻障金屬接觸區域邊緣，以消除裝置的提前崩潰。二極體的正向電壓是直接正比於蕭特基的阻障金屬的高度。因此，使用低蕭特基阻障金屬來自製作二極體，以減少二極體的傳導損失。然而，在反轉區塊模式(reverse blocking mode)中，蕭特基的漏電流也是由蕭特基的阻障高度決定。在二極體的反轉區塊運作下，低蕭特基阻障高度將引起高漏電流。
為了減少蕭特基二極體的反轉漏電流，P型接面被如第1B圖所示設置於矽中。在反轉區塊模組時，n-矽相較於蕭特基阻障金屬是處在較高的電位。PN接面也是反轉偏壓。兩鄰接p型接面合併所產生的空乏區保護蕭特基阻障表面免於高反轉電壓，藉此減少二極體的漏電流。JBS的缺點在於縮小p型接面的蕭特基表面區域。對較高的崩潰電壓蕭特基二極體、深次p型接面經常是需要的。深次接面也具有較多的側向擴散。可利用的蕭特基區域將是相當低，對高崩潰電壓JBS而言。另一種用以保護蕭特基阻障層免於反轉電壓的方式是溝渠MOS阻障蕭特基，如同第1C圖所示。伴隨著溝渠蕭特基阻障，環繞於溝渠較低部分的空乏區夾止(pinch off)並且保護在台地頂面的蕭特基阻障接面。溝渠的形狀影響溝渠內之電介質的崩潰。底部與頂部角落的去角是必要的，以減少TMBS的漏電流。銳角的去角需要額外的處理步驟與特殊的設備，並且這些需求都引起製作成本的增加。
因此，對包含有功率裝置之電子裝置中的蕭特基二極體的實施一直存在的一需求，其能提供架構與製作蕭特基二極體的新裝置架構與製作方法，以克服並解決上述問題與限制。
本發明之主要目的在提供一種新穎且改良的蕭特基二極體，其具有沉積在溝渠內的接面阻障層，此蕭特基二極體配置於溝渠底下的摻雜區域，具有等級(grading)摻雜輪廓，藉此實現一逐漸減弱的摻雜 植入，改善JBS運作，因此上述的限制與蕭特基既有的缺點將可獲得解決。
本發明之另一目的在提供一種新穎且改良的具有JBS設置的蕭特基裝置架構，其具有摻雜島形成在距離溝渠底部一距離的地方並且摻雜島間具有一最有效地進行空間，因此正向電壓可被減少，崩潰電壓可以被增加，而漏電流Idss也可被減少。
底下藉由具體實施例詳加說明，當更容易瞭解本發明之目的、技術內容、特點及其所達成之功效。
請參閱第2圖，其係本發明之蕭特基二極體的剖視圖。蕭特基二極體100被支撐並且形成於一半導體基底上，例如，一N型摻雜矽基底105。蕭特基二極體100包含有數個溝渠，以形成數個半導體台地。在第2圖的具體實施例中，溝渠是填滿蕭特基阻障金屬，例如鈦/氮化鈦或者鎢金屬110，或者一接觸金屬層鍍蓋於蕭特基阻障金屬上。在另一具體實施例中(圖中未示)，半導體台地的垂直表面的至少一部份隨著蕭特基阻障金屬排列。為了達到防止由反轉電壓所引起的漏電流的目的，P型摻雜區域140圍繞著溝渠底部形成。懸浮P島150是設置於溝渠底部下方。在反轉偏壓下，懸浮P島150與基底形成一額外PN接面，此外，PN接面形成於P摻雜區域140與N基底間，因此反轉偏壓是分散於兩接面間，而取代習知技藝中是在一接面，並且裝置的反轉偏壓崩潰電壓因此增加。第2B圖顯示另一具體實施例，其複數個懸浮P島是設置於通到底部下方，藉此，形成一些額外PN接面，以將總反轉偏壓分開，崩潰電壓因此或得更進一步增加。
第3圖是本發明之另一具體實施例的剖視圖。裝置300，如同第3圖所示，包含有數個深次溝渠170，其填充有蕭特基阻障金屬110。此外，在第3圖中，P摻雜區域140與懸浮P島150也包含有數個P 區域120，其沿著溝渠的深度而環繞於溝渠周緣，並且頂端P摻雜區域130的環繞溝渠的頂端部分，以防止反轉漏電流。
裝置400，如同第4圖所示，是與在第2圖中所示的裝置200近似，除了在裝置400中，一電介質(dialectical)層是沿著溝渠側壁形成，因此無形成任何溝渠側壁蕭特基接觸。或者，溝渠可以填入傳導材料，例如已摻雜多晶矽來取代蕭特基阻障金屬，以電性連接P摻雜區域140至蕭特基接觸層110。
第5圖係本發明之又一具體實施例500的剖視圖。裝置500，如同第5圖所示，包含有數個淺溝渠，其填入有蕭特基阻障金屬110。溝渠是被蝕刻穿過一蓋覆於N層105上的P+摻雜層145。溝渠角落是被去角，以避免銳角效應，因為蕭特基接面是形成在溝渠底部與角落四周。一隨意的電介質層160可形成於P+層145上，因此P+層145僅在溝渠邊緣與蕭特基金屬110接觸。數個P+懸浮島形成於P+層145下方，以增加反轉偏壓崩潰電壓。
第6圖係本發明之再一具體實施例600的剖視圖。裝置600是一平面的裝置。此外，P+區域146形成於基底頂端且與蕭特基接面阻障金屬110接觸，此裝置更包含有數個位於每一P+區域146表面下方的P+懸浮島，以增加反轉崩潰電壓。
上述各實施例中，N型摻雜矽基底105、P型摻雜區域140、懸浮P島150、P區域120、P摻雜區域130、P+摻雜層145、P+區域146可分別以P型摻雜矽基底、N型摻雜區域、懸浮N島、N區域、N摻雜區域、N+摻雜層、N+區域取代之，一樣可以達到上述功效。
第7A-7D是製作第2圖所示之裝置100的步驟剖視圖。在第7A圖中，首先提供一底部為N+基底701而頂端為N-磊晶層705之N型磊晶層晶圓。在這具體實施例中，在磊晶層705中的N摻雜濃度是調整在大約1E16/cm3，對一30V裝置(崩潰)裝置。氧化層725可形 成於磊晶層702上方並且一光罩727是應用來蝕刻氧化層725的部分。在第7B圖，溝渠715是蝕刻穿過光罩727至磊晶層至一預設深度，隨後進行一高能量P型植入，以形成一P+區域750。多重(multiple)的P+懸浮島750在輸送深度可以被形成藉由硼離子的多重植入劑量範圍，其由1E11至1E16，能量能階由60Kev~1000Kev。在具體實施例中，劑量5E11的硼離子是以3000KeV能階進行植入，以形成一P+區域750大約0.85um位於通到底部。在第7C圖，一較低能量的植入是被實行，以形成P+區域740。在具體實施例中，氟化硼(BF2 )是利用60KeV的離子植入能量來植入。在這個範例中，這個步驟可以在施行接觸植入時同時間被實行，當蕭特基裝置與其它功能電路整合時，此其它功能電路可以是垂直DMOS。氧化層725隨後被移除。在第7D圖中，蕭特基阻障金屬例如鈦/氮化鈦或者鎢是被沉積，以形成一陽極電極。反之，金屬矽化物過程被施行，在沉積一薄的蕭特基阻障金屬層後，隨後，沉積一厚的接觸金屬層。在沉積陰極電極於基底701底表面上後完成整個製程步驟。
唯以上所述者，僅為本發明之較佳實施例而已，並非用來限定本發明實施之範圍。故即凡依本發明申請範圍所述之特徵及精神所為之均等變化或修飾，均應包括於本發明之申請專利範圍內。
100‧‧‧蕭特基二極體
105‧‧‧N型摻雜矽基底
110‧‧‧鎢金屬
120‧‧‧P區域
130‧‧‧頂端P摻雜區域
140‧‧‧P型摻雜區域
145‧‧‧P+摻雜層
146‧‧‧P+區域
150‧‧‧懸浮P島
160‧‧‧電介質層
170‧‧‧溝渠
300‧‧‧裝置
400‧‧‧裝置
500‧‧‧裝置
600‧‧‧裝置
701‧‧‧N+基底
705‧‧‧N-磊晶層
715‧‧‧溝渠
725‧‧‧氧化層
727‧‧‧光罩
740‧‧‧P+區域
750‧‧‧P+懸浮島
第1A~1C圖係習知技術所揭露的蕭特基二極體的剖視圖。
第2A與2B圖係本發明之具有P+懸浮島的蕭特基二極體的剖視圖。
第3圖係本發明之具有沿著溝渠深度之P+區域的蕭特基二極體剖視圖。
第4圖係本發明之具有溝渠側壁電介質層的蕭特基二極體剖視圖。
第5圖係本發明之具有在溝渠底部形成有蕭特基接面的蕭特基二極體剖視圖。
第6圖係本發明之平面蕭特基二極體的剖視圖。
第7A~7D圖係第2圖之蕭特基二極體的製程步驟的一系列剖視圖。
100‧‧‧蕭特基二極體
105‧‧‧N型摻雜矽基底
110‧‧‧鎢金屬
140‧‧‧P型摻雜區域
150‧‧‧懸浮P島

Claims (19)

  1. 一蕭特基二極體，其包含有：數個溝渠，其係形成於一N型半導體基底，該溝渠內設有一蕭特基阻障材料；以及數個P型摻雜區，其係位於該溝渠下方，如同位於該半導體基底內的懸浮島，其中每一該懸浮島之寬度是與該溝渠本質上相同或些微寬一點，並且與溝渠本質上垂直對齊。
  2. 如申請專利範圍第1項所述之蕭特基二極體，其中：該形成於該N型半導體基底的溝渠內設置有一由鈦/氮化鈦所組構成的蕭特基阻障材料或者鎢金屬，以構成該蕭特基阻障。
  3. 如申請專利範圍第1項所述之蕭特基二極體，其中：該形成於該N型半導體基底的溝渠側壁上設置有一蕭特基阻障材料，以構成該蕭特基阻障。
  4. 如申請專利範圍第1項所述之蕭特基二極體，其更包含有：一接觸金屬層，其覆蓋並且與設置於該溝渠內之該蕭特基阻障接觸，以作為該蕭特基二極體的一電極。
  5. 如申請專利範圍第1項所述之蕭特基二極體，其更包含有：在第一導電型態之該半導體基底內的一第二導電型態的底部摻雜區域環繞於至少一該溝渠的角落底部。
  6. 如申請專利範圍第1項所述之蕭特基二極體，其更包含有：一由已摻雜多晶矽所組構且填入於該溝渠之傳導材料並且該蕭特基阻障包含有一蕭特基阻障層，其設置於該溝渠之頂端且與該已摻雜多晶矽接觸。
  7. 如申請專利範圍第1項所述之蕭特基二極體，其更包含有：一填入有一蕭特基阻障材料的淺溝渠，以組構該蕭特基阻障，其中該淺溝渠是在一第一導電型態之一半導體基底中被一第二導電型態 之一已摻雜區域圍繞，其中該淺溝渠具有去角化的溝渠底部角落。
  8. 如申請專利範圍第7項所述之蕭特基二極體，其更包含有：一電介質層絕緣該第二傳導型態的以摻雜區域，其中該第二導電型態之已摻雜區域，藉此避免該第二導電型態之已摻雜區域與一溝渠角落接觸並且僅與填充於該淺溝渠之該蕭特基阻障材料接觸。
  9. 如申請專利範圍第1項所述之蕭特基二極體，其更包含有：一覆蓋於一半導體基底之一頂表面的蕭特基阻障材料，構成該蕭特基阻障，伴隨著有該數個設置於該蕭特基阻障材料下方作為懸浮島的已摻雜區域，以作為PN接面，以防止由一反轉電壓所產生的一漏電流。
  10. 一種蕭特基二極體，其包含有：數個溝渠，其係形成於一P型半導體基底，該溝渠內設有一蕭特基阻障材料；以及數個N型摻雜區，其係位於該溝渠下方，如同位於該半導體基底內的懸浮島，其中每一該懸浮島之寬度是與該溝渠本質上相同或些微寬一點，並且與溝渠本質上垂直對齊。
  11. 如申請專利範圍第10項所述之蕭特基二極體，其中：該形成於該P型半導體基底內之溝渠內設置有一由鈦/氮化鈦所組構成的蕭特基阻障材料或者鎢金屬，以構成該蕭特基阻障。
  12. 如申請專利範圍第10項所述之蕭特基二極體，其中：該形成於該P型半導體基底的溝渠側壁上設置有一蕭特基阻障材料，以構成該蕭特基阻障。
  13. 如申請專利範圍第10項所述之蕭特基二極體，其更包含有：第二導電型態的一頂端摻雜區域環繞於該溝渠的側壁頂端部分，在第一導電型態的該半導體基底中。
  14. 如申請專利範圍第10項所述之蕭特基二極體，其更包含有： 一或一個以上的第二導電型態之摻雜區域圍繞於該溝渠側壁，沿著該溝渠深度分佈，在第一導電型態的該半導體基底中。
  15. 如申請專利範圍第10項所述之蕭特基二極體，其中：該蕭特基阻障金屬更排列在該溝渠的底表面上，以在該溝渠底表面上形成蕭特基接面。
  16. 如申請專利範圍第10項所述之蕭特基二極體，其更包含有：一電介質層，其係沿著該溝渠的側壁設置。
  17. 一種製作一蕭特基二極體的方法，其包含有：提供一半導體基底；於該半導體基底上形成數個延伸至該半導體基底內之溝渠；對該溝渠進行一離子植入製程，以在該半導體基底內形成數個摻雜區，該摻雜區形成位於該半導體基底內及該溝渠下方的懸浮島，每一該懸浮島之寬度是與該溝渠本質上相同或些微寬一點，並且與溝渠本質上垂直對齊；以及填入一蕭特基阻障材料於該溝渠內，以在該溝渠內形成該蕭特基阻障。
  18. 如申請專利範圍第17項所述之方法，其中：該填入該蕭特基阻障材料的步驟更包含有一步驟，其係填入鈦/氮化鈦或者一鎢金屬於該溝渠，以形成該蕭特基阻障。
  19. 如申請專利範圍第17項所述之方法，其中：該填入該蕭特基阻障材料的步驟更包含有一步驟，其係設置一蕭特基阻障材料在該溝渠側壁，以形成該蕭特基阻障，其係沿著該溝渠的側壁。
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TW200826303A (en) 2008-06-16
CN101517752B (zh) 2011-12-28
WO2008070034A3 (en) 2008-07-24
CN101517752A (zh) 2009-08-26
US8227330B2 (en) 2012-07-24
WO2008070034A2 (en) 2008-06-12
US20120306043A1 (en) 2012-12-06
US7671439B2 (en) 2010-03-02
US20070075392A1 (en) 2007-04-05
US8680643B2 (en) 2014-03-25

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