TWI390648B - 樣本檢查裝置 - Google Patents

樣本檢查裝置 Download PDF

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Publication number
TWI390648B
TWI390648B TW095115198A TW95115198A TWI390648B TW I390648 B TWI390648 B TW I390648B TW 095115198 A TW095115198 A TW 095115198A TW 95115198 A TW95115198 A TW 95115198A TW I390648 B TWI390648 B TW I390648B
Authority
TW
Taiwan
Prior art keywords
sample
focal length
value
unit
optical
Prior art date
Application number
TW095115198A
Other languages
English (en)
Chinese (zh)
Other versions
TW200701384A (en
Inventor
金馬利文
Original Assignee
荏原製作所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荏原製作所股份有限公司 filed Critical 荏原製作所股份有限公司
Publication of TW200701384A publication Critical patent/TW200701384A/zh
Application granted granted Critical
Publication of TWI390648B publication Critical patent/TWI390648B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/21Means for adjusting the focus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21Focus adjustment
    • H01J2237/216Automatic focusing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248Components associated with the control of the tube
    • H01J2237/2482Optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26Electron or ion microscopes
    • H01J2237/28Scanning microscopes
    • H01J2237/2813Scanning microscopes characterised by the application
    • H01J2237/2817Pattern inspection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW095115198A 2005-05-02 2006-04-28 樣本檢查裝置 TWI390648B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005134136A JP4959149B2 (ja) 2005-05-02 2005-05-02 試料検査装置

Publications (2)

Publication Number Publication Date
TW200701384A TW200701384A (en) 2007-01-01
TWI390648B true TWI390648B (zh) 2013-03-21

Family

ID=37396426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095115198A TWI390648B (zh) 2005-05-02 2006-04-28 樣本檢查裝置

Country Status (5)

Country Link
US (1) US7964844B2 (https=)
JP (1) JP4959149B2 (https=)
KR (1) KR101213587B1 (https=)
TW (1) TWI390648B (https=)
WO (1) WO2006120917A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010517233A (ja) * 2007-01-25 2010-05-20 エヌエフエイビー・リミテッド 改良された粒子ビーム発生装置
JP2008252070A (ja) * 2007-03-07 2008-10-16 Nuflare Technology Inc 荷電粒子ビームの焦点合わせ方法及び荷電粒子ビームの非点調整方法
JP5243912B2 (ja) * 2008-01-24 2013-07-24 日本電子株式会社 荷電粒子ビーム装置におけるビーム位置較正方法
JP5325802B2 (ja) * 2010-01-28 2013-10-23 株式会社日立ハイテクノロジーズ 観察方法および観察装置
US8519353B2 (en) * 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
JP5331828B2 (ja) * 2011-01-14 2013-10-30 株式会社日立ハイテクノロジーズ 荷電粒子線装置
US8912488B2 (en) * 2012-11-15 2014-12-16 Fei Company Automated sample orientation
US9110039B2 (en) * 2013-07-25 2015-08-18 Kla-Tencor Corporation Auto-focus system and methods for die-to-die inspection
JP6309366B2 (ja) * 2014-06-30 2018-04-11 株式会社ホロン 荷電粒子線装置における高さ測定装置およびオートフォーカス装置
JP7455676B2 (ja) * 2020-06-05 2024-03-26 株式会社日立ハイテク 電子顕微鏡および電子顕微鏡のフォーカス調整方法
WO2021250733A1 (ja) * 2020-06-08 2021-12-16 株式会社日立ハイテク 荷電粒子線装置、およびそのフォーカス調整方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2542356C2 (de) * 1975-09-19 1977-10-20 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Fokussierung der Objektivlinse eines Korpuskular-Durchstrahlungs-Rastermikroskops und Einrichtung zur selbsttätigen Durchführung des Verfahrens, sowie Anwendung
JPH053013A (ja) * 1991-06-24 1993-01-08 Shimadzu Corp 自動焦点調節装置
JPH07245075A (ja) * 1994-03-04 1995-09-19 Horon:Kk 自動焦点合わせ装置
JPH1048163A (ja) * 1996-08-07 1998-02-20 Shimadzu Corp 表面分析方法およびその装置
US6107637A (en) * 1997-08-11 2000-08-22 Hitachi, Ltd. Electron beam exposure or system inspection or measurement apparatus and its method and height detection apparatus
JPH11149895A (ja) * 1997-08-11 1999-06-02 Hitachi Ltd 電子線式検査または測定装置およびその方法、高さ検出装置並びに電子線式描画装置
JP2000228166A (ja) * 1999-02-05 2000-08-15 Horon:Kk 試料観察装置
JP4610798B2 (ja) * 2001-06-19 2011-01-12 エスアイアイ・ナノテクノロジー株式会社 レーザ欠陥検出機能を備えた走査型電子顕微鏡とそのオートフォーカス方法
WO2003007330A1 (fr) * 2001-07-12 2003-01-23 Hitachi, Ltd. Procede de mesure de l'electrisation d'un echantillon et dispositif a faisceau de particules chargees
JP4388270B2 (ja) * 2002-11-18 2009-12-24 株式会社日立ハイテクノロジーズ 表面検査方法及び表面検査装置
EP1630862B1 (en) * 2003-05-30 2016-01-13 Ebara Corporation Sample inspection device and method, and device manufacturing method using the sample inspection device and method
US7440086B2 (en) * 2005-09-21 2008-10-21 Kla-Tencor Technologies Corp. Methods and systems for creating a recipe for a defect review process

Also Published As

Publication number Publication date
US7964844B2 (en) 2011-06-21
US20090212214A1 (en) 2009-08-27
KR101213587B1 (ko) 2013-01-18
JP2006310223A (ja) 2006-11-09
WO2006120917A1 (ja) 2006-11-16
JP4959149B2 (ja) 2012-06-20
KR20080011304A (ko) 2008-02-01
TW200701384A (en) 2007-01-01

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