TWI390613B - 用以清潔電極總成充氣室的清潔設備以及方法 - Google Patents
用以清潔電極總成充氣室的清潔設備以及方法 Download PDFInfo
- Publication number
- TWI390613B TWI390613B TW097134774A TW97134774A TWI390613B TW I390613 B TWI390613 B TW I390613B TW 097134774 A TW097134774 A TW 097134774A TW 97134774 A TW97134774 A TW 97134774A TW I390613 B TWI390613 B TW I390613B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluid
- cleaning
- plenum
- cleaning fluid
- input
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims description 138
- 238000000034 method Methods 0.000 title claims description 43
- 239000012530 fluid Substances 0.000 claims description 196
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 238000004891 communication Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 239000002699 waste material Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 description 12
- 230000000712 assembly Effects 0.000 description 5
- 238000000429 assembly Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/869,340 US7736441B2 (en) | 2007-10-09 | 2007-10-09 | Cleaning fixtures and methods of cleaning electrode assembly plenums |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200933713A TW200933713A (en) | 2009-08-01 |
| TWI390613B true TWI390613B (zh) | 2013-03-21 |
Family
ID=40522244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097134774A TWI390613B (zh) | 2007-10-09 | 2008-09-10 | 用以清潔電極總成充氣室的清潔設備以及方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7736441B2 (enExample) |
| JP (1) | JP5579068B2 (enExample) |
| KR (1) | KR101555389B1 (enExample) |
| TW (1) | TWI390613B (enExample) |
| WO (1) | WO2009048702A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10391526B2 (en) | 2013-12-12 | 2019-08-27 | Lam Research Corporation | Electrostatic chuck cleaning fixture |
| JP5764228B1 (ja) * | 2014-03-18 | 2015-08-12 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| JP5885870B2 (ja) * | 2015-04-06 | 2016-03-16 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体 |
| CN112222096B (zh) * | 2019-07-15 | 2023-10-10 | 长鑫存储技术有限公司 | 清洁装置以及晶圆处理设备以及晶圆载台的清洁方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273588A (en) * | 1992-06-15 | 1993-12-28 | Materials Research Corporation | Semiconductor wafer processing CVD reactor apparatus comprising contoured electrode gas directing means |
| US5266153A (en) * | 1992-06-16 | 1993-11-30 | National Semiconductor Corp. | Gas distribution head for plasma deposition and etch systems |
| JP2005109194A (ja) * | 2003-09-30 | 2005-04-21 | Japan Steel Works Ltd:The | Ｃｖｄ反応室のクリーニング装置 |
| JP2005167087A (ja) * | 2003-12-04 | 2005-06-23 | Tokyo Electron Ltd | クリーニング方法及び半導体製造装置 |
| US7645341B2 (en) * | 2003-12-23 | 2010-01-12 | Lam Research Corporation | Showerhead electrode assembly for plasma processing apparatuses |
| JP2006128485A (ja) * | 2004-10-29 | 2006-05-18 | Asm Japan Kk | 半導体処理装置 |
| US7052553B1 (en) * | 2004-12-01 | 2006-05-30 | Lam Research Corporation | Wet cleaning of electrostatic chucks |
| US7442114B2 (en) * | 2004-12-23 | 2008-10-28 | Lam Research Corporation | Methods for silicon electrode assembly etch rate and etch uniformity recovery |
| US7247579B2 (en) * | 2004-12-23 | 2007-07-24 | Lam Research Corporation | Cleaning methods for silicon electrode assembly surface contamination removal |
| US7507670B2 (en) * | 2004-12-23 | 2009-03-24 | Lam Research Corporation | Silicon electrode assembly surface decontamination by acidic solution |
| US7638004B1 (en) * | 2006-05-31 | 2009-12-29 | Lam Research Corporation | Method for cleaning microwave applicator tube |
| US7942973B2 (en) * | 2006-10-16 | 2011-05-17 | Lam Research Corporation | Methods and apparatus for wet cleaning electrode assemblies for plasma processing apparatuses |
| US8221552B2 (en) * | 2007-03-30 | 2012-07-17 | Lam Research Corporation | Cleaning of bonded silicon electrodes |
| US7578889B2 (en) * | 2007-03-30 | 2009-08-25 | Lam Research Corporation | Methodology for cleaning of surface metal contamination from electrode assemblies |
| JP2007204855A (ja) * | 2007-05-20 | 2007-08-16 | Tokyo Electron Ltd | 成膜装置 |
-
2007
- 2007-10-09 US US11/869,340 patent/US7736441B2/en not_active Expired - Fee Related
-
2008
- 2008-09-09 KR KR1020107010167A patent/KR101555389B1/ko active Active
- 2008-09-09 JP JP2010528919A patent/JP5579068B2/ja not_active Expired - Fee Related
- 2008-09-09 WO PCT/US2008/075675 patent/WO2009048702A1/en not_active Ceased
- 2008-09-10 TW TW097134774A patent/TWI390613B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US7736441B2 (en) | 2010-06-15 |
| WO2009048702A1 (en) | 2009-04-16 |
| JP5579068B2 (ja) | 2014-08-27 |
| JP2011501411A (ja) | 2011-01-06 |
| TW200933713A (en) | 2009-08-01 |
| US20090090393A1 (en) | 2009-04-09 |
| KR101555389B1 (ko) | 2015-09-23 |
| KR20100090768A (ko) | 2010-08-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |