TWI371502B - Method and apparatus for plasma enhanced chemical vapor deposition - Google Patents

Method and apparatus for plasma enhanced chemical vapor deposition

Info

Publication number
TWI371502B
TWI371502B TW096142429A TW96142429A TWI371502B TW I371502 B TWI371502 B TW I371502B TW 096142429 A TW096142429 A TW 096142429A TW 96142429 A TW96142429 A TW 96142429A TW I371502 B TWI371502 B TW I371502B
Authority
TW
Taiwan
Prior art keywords
vapor deposition
chemical vapor
plasma enhanced
enhanced chemical
plasma
Prior art date
Application number
TW096142429A
Other languages
English (en)
Other versions
TW200837216A (en
Inventor
Thomas Kuepper
Lars Bewig
Christoph Moelle
Lars Brandt
Thomas Niklos
Original Assignee
Schott Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott Ag filed Critical Schott Ag
Publication of TW200837216A publication Critical patent/TW200837216A/zh
Application granted granted Critical
Publication of TWI371502B publication Critical patent/TWI371502B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
TW096142429A 2006-11-10 2007-11-09 Method and apparatus for plasma enhanced chemical vapor deposition TWI371502B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006053366A DE102006053366A1 (de) 2006-11-10 2006-11-10 Verfahren und Vorrichtung zur plasmaunterstützten chemischen Dampfphasenabscheidung

Publications (2)

Publication Number Publication Date
TW200837216A TW200837216A (en) 2008-09-16
TWI371502B true TWI371502B (en) 2012-09-01

Family

ID=38917732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142429A TWI371502B (en) 2006-11-10 2007-11-09 Method and apparatus for plasma enhanced chemical vapor deposition

Country Status (7)

Country Link
US (1) US7947337B2 (zh)
EP (1) EP1921656B8 (zh)
JP (2) JP5147364B2 (zh)
KR (1) KR100988354B1 (zh)
CN (1) CN101220469B (zh)
DE (1) DE102006053366A1 (zh)
TW (1) TWI371502B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495746B (zh) * 2013-11-13 2015-08-11 Mingdao University 沉積系統

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK2251453T3 (da) 2009-05-13 2014-07-07 Sio2 Medical Products Inc Beholderholder
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
DE102010012501A1 (de) * 2010-03-12 2011-09-15 Khs Corpoplast Gmbh Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
DE102010048960A1 (de) * 2010-10-18 2012-04-19 Khs Corpoplast Gmbh Verfahren und Vorrichtung zur Plasmabehandlung von Werkstücken
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103930595A (zh) 2011-11-11 2014-07-16 Sio2医药产品公司 用于药物包装的钝化、pH保护性或润滑性涂层、涂布方法以及设备
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
GB2505685B (en) * 2012-09-07 2015-11-04 Univ Salford Method of coating and etching
CA2890066C (en) 2012-11-01 2021-11-09 Sio2 Medical Products, Inc. Coating inspection method
EP2920567B1 (en) 2012-11-16 2020-08-19 SiO2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
JP6382830B2 (ja) 2012-11-30 2018-08-29 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 医療シリンジ、カートリッジ等上でのｐｅｃｖｄ堆積の均一性制御
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CN110074968B (zh) 2013-03-11 2021-12-21 Sio2医药产品公司 涂布包装材料
US9863042B2 (en) 2013-03-15 2018-01-09 Sio2 Medical Products, Inc. PECVD lubricity vessel coating, coating process and apparatus providing different power levels in two phases
EP3122917B1 (en) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatic coatings for plastic vessels
JP6102816B2 (ja) * 2014-03-31 2017-03-29 ブラザー工業株式会社 成膜装置、成膜方法及び成膜プログラム
JP2018523538A (ja) 2015-08-18 2018-08-23 エスアイオーツー・メディカル・プロダクツ・インコーポレイテッド 低酸素透過速度を有する薬剤包装及び他の包装
DE102016110800A1 (de) * 2016-06-13 2017-12-14 Cavonic GmbH Verfahren und Vorrichtung zum Beschichten von Verpackungsbehältern
AT526559A1 (de) * 2022-10-04 2024-04-15 Pohl Metall Gmbh Scheinwerferbauelement, prüfverfahren sowie herstellungs- und prüfverfahren

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US539545A (en) * 1895-05-21 Territory
JPS62188783A (ja) * 1986-02-14 1987-08-18 Sanyo Electric Co Ltd 静電潜像担持体の製造方法
JP2598274B2 (ja) * 1987-09-14 1997-04-09 三菱電機株式会社 プラズマ応用装置
DE4114108C1 (zh) 1991-04-30 1991-12-19 Schott Glaswerke, 6500 Mainz, De
US5273609A (en) * 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
JPH04152520A (ja) * 1990-10-16 1992-05-26 Sony Corp 半導体処理装置
DE4122452C2 (de) 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
JPH08977B2 (ja) * 1991-08-22 1996-01-10 日新電機株式会社 プラズマｃｖｄ法及び装置
DE4137606C1 (zh) * 1991-11-15 1992-07-30 Schott Glaswerke, 6500 Mainz, De
JP2582251Y2 (ja) * 1992-04-13 1998-09-30 新日本無線株式会社 マイクロ波プラズマｃｖｄ装置
JP2748781B2 (ja) * 1992-06-29 1998-05-13 日新電機株式会社 シリコン膜の形成方法
JP3026704B2 (ja) * 1993-07-29 2000-03-27 富士通株式会社 マグネトロン発振出力制御装置及びプラズマ処理方法
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
JPH07283154A (ja) 1994-02-21 1995-10-27 Nissin Electric Co Ltd プラズマｃｖｄ法及び装置
US5395435A (en) * 1994-05-04 1995-03-07 Ab Dick Company Fast drying duplicating ink
JP3444013B2 (ja) 1994-08-10 2003-09-08 日新電機株式会社 強誘電体膜形成方法及び装置
DE19629877C1 (de) * 1996-07-24 1997-03-27 Schott Glaswerke CVD-Verfahren und Vorrichtung zur Innenbeschichtung von Hohlkörpern
JP2001284322A (ja) * 2000-03-30 2001-10-12 Sharp Corp プラズマプロセス装置、プラズマプロセス装置の制御方法および不良品判定方法
KR100757717B1 (ko) * 2000-04-13 2007-09-11 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 박막 형성 방법, 박막 형성 장치 및 태양전지
US20040224504A1 (en) * 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
DE10037053C2 (de) * 2000-07-29 2002-06-13 Mtu Aero Engines Gmbh Verfahren und Vorrichtung zum Plasmaimpulsverfestigen eines metallischen Bauteils
RU2190484C1 (ru) * 2001-06-04 2002-10-10 Бугров Глеб Эльмирович Способ плазменного осаждения полимерных покрытий и способ генерации плазмы
US6736944B2 (en) 2002-04-12 2004-05-18 Schneider Automation Inc. Apparatus and method for arc detection
JP4442182B2 (ja) * 2002-10-09 2010-03-31 東洋製罐株式会社 金属酸化膜の形成方法
EP1561840A4 (en) 2002-10-09 2009-05-13 Toyo Seikan Kaisha Ltd METHOD FOR PRODUCING A METAL OXIDE FILM AND MICROWAVE POWER SOURCE FOR USE IN THIS METHOD
DE102004042431B4 (de) * 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
CN1631776A (zh) 2004-11-11 2005-06-29 上海交通大学 微波氢等离子体制备金属硅化物薄膜的方法
WO2006107044A1 (ja) * 2005-04-04 2006-10-12 Matsushita Electric Industrial Co., Ltd. プラズマ処理方法及び装置
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
US20090205538A1 (en) * 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI495746B (zh) * 2013-11-13 2015-08-11 Mingdao University 沉積系統

Also Published As

Publication number Publication date
US7947337B2 (en) 2011-05-24
EP1921656B8 (de) 2014-07-09
CN101220469B (zh) 2010-08-11
JP5543500B2 (ja) 2014-07-09
CN101220469A (zh) 2008-07-16
DE102006053366A1 (de) 2008-05-15
US20080124488A1 (en) 2008-05-29
EP1921656A1 (de) 2008-05-14
JP2008121116A (ja) 2008-05-29
KR20080042752A (ko) 2008-05-15
KR100988354B1 (ko) 2010-10-18
TW200837216A (en) 2008-09-16
EP1921656B1 (de) 2014-04-30
JP2012062579A (ja) 2012-03-29
JP5147364B2 (ja) 2013-02-20

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