TWI370562B - Semiconductor light-emitting device and method for producing semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device and method for producing semiconductor light-emitting device

Info

Publication number
TWI370562B
TWI370562B TW097137612A TW97137612A TWI370562B TW I370562 B TWI370562 B TW I370562B TW 097137612 A TW097137612 A TW 097137612A TW 97137612 A TW97137612 A TW 97137612A TW I370562 B TWI370562 B TW I370562B
Authority
TW
Taiwan
Prior art keywords
emitting device
semiconductor light
producing
producing semiconductor
light
Prior art date
Application number
TW097137612A
Other languages
English (en)
Other versions
TW200939535A (en
Inventor
Takashi Watanabe
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200939535A publication Critical patent/TW200939535A/zh
Application granted granted Critical
Publication of TWI370562B publication Critical patent/TWI370562B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW097137612A 2007-10-01 2008-09-30 Semiconductor light-emitting device and method for producing semiconductor light-emitting device TWI370562B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007257234A JP4892445B2 (ja) 2007-10-01 2007-10-01 半導体発光素子および半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
TW200939535A TW200939535A (en) 2009-09-16
TWI370562B true TWI370562B (en) 2012-08-11

Family

ID=40526127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137612A TWI370562B (en) 2007-10-01 2008-09-30 Semiconductor light-emitting device and method for producing semiconductor light-emitting device

Country Status (6)

Country Link
US (1) US8138001B2 (zh)
JP (1) JP4892445B2 (zh)
KR (1) KR101055590B1 (zh)
CN (1) CN101878541B (zh)
TW (1) TWI370562B (zh)
WO (1) WO2009044698A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI565097B (zh) * 2013-02-08 2017-01-01 隆達電子股份有限公司 發光二極體及其製造方法

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200929601A (en) * 2007-12-26 2009-07-01 Epistar Corp Semiconductor device
CN101877377B (zh) 2009-04-30 2011-12-14 比亚迪股份有限公司 一种分立发光二极管的外延片及其制造方法
KR101220433B1 (ko) * 2009-06-10 2013-02-04 서울옵토디바이스주식회사 반도체 기판, 그 제조 방법, 반도체 소자 및 그 제조 방법
US8860183B2 (en) 2009-06-10 2014-10-14 Seoul Viosys Co., Ltd. Semiconductor substrate, semiconductor device, and manufacturing methods thereof
US8481411B2 (en) 2009-06-10 2013-07-09 Seoul Opto Device Co., Ltd. Method of manufacturing a semiconductor substrate having a cavity
CN104795314B (zh) 2009-08-26 2018-02-09 首尔伟傲世有限公司 制造发光装置的方法
JP5407707B2 (ja) * 2009-09-29 2014-02-05 豊田合成株式会社 半導体発光素子及びその製造方法
JP2011082362A (ja) * 2009-10-07 2011-04-21 Showa Denko Kk 発光ダイオード用金属基板、発光ダイオード及びその製造方法
JP5570838B2 (ja) * 2010-02-10 2014-08-13 ソウル バイオシス カンパニー リミテッド 半導体基板、その製造方法、半導体デバイス及びその製造方法
KR101125025B1 (ko) 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP5404596B2 (ja) * 2010-12-27 2014-02-05 株式会社東芝 発光素子およびその製造方法
TWI411136B (zh) * 2011-05-10 2013-10-01 Lextar Electronics Corp 半導體發光結構
JP2012248795A (ja) * 2011-05-31 2012-12-13 Toshiba Corp 半導体発光素子およびその製造方法
TWI546979B (zh) * 2012-03-05 2016-08-21 晶元光電股份有限公司 對位接合之發光二極體裝置與其製造方法
JP6068091B2 (ja) * 2012-10-24 2017-01-25 スタンレー電気株式会社 発光素子
JP5814968B2 (ja) 2013-03-22 2015-11-17 株式会社東芝 窒化物半導体発光装置
CN105226154B (zh) * 2015-10-27 2019-03-05 天津三安光电有限公司 一种led芯片结构与制造方法
JP6826395B2 (ja) * 2016-08-26 2021-02-03 ローム株式会社 半導体発光素子
DE102017104719A1 (de) 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper und Halbleiterchip
KR102573271B1 (ko) * 2018-04-27 2023-08-31 삼성전자주식회사 반도체 발광소자
KR20210000351A (ko) 2019-06-24 2021-01-05 삼성전자주식회사 반도체 발광소자 및 디스플레이 장치
CN114639763B (zh) * 2022-05-12 2022-09-06 南昌凯捷半导体科技有限公司 一种具有嵌入式电极的反极性红外led及其制备方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3230638B2 (ja) 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
JP2588849B2 (ja) 1994-10-26 1997-03-12 國欣 黄 透光導電薄膜応用の半導体結晶結合方法
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
JP3977572B2 (ja) 1999-06-09 2007-09-19 株式会社東芝 接着型半導体基板および半導体発光素子並びにこれらの製造方法
TW493286B (en) 2001-02-06 2002-07-01 United Epitaxy Co Ltd Light-emitting diode and the manufacturing method thereof
US7675075B2 (en) * 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
JP2005252222A (ja) * 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP4978877B2 (ja) * 2004-06-10 2012-07-18 信越半導体株式会社 発光素子の製造方法及び発光素子
KR100616631B1 (ko) * 2004-11-15 2006-08-28 삼성전기주식회사 질화물계 반도체 발광 소자 및 그 제조 방법
US7929587B2 (en) * 2007-04-27 2011-04-19 Sanyo Electric Co., Ltd. Semiconductor laser diode element and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI565097B (zh) * 2013-02-08 2017-01-01 隆達電子股份有限公司 發光二極體及其製造方法

Also Published As

Publication number Publication date
KR20100072043A (ko) 2010-06-29
US8138001B2 (en) 2012-03-20
TW200939535A (en) 2009-09-16
JP2009088318A (ja) 2009-04-23
KR101055590B1 (ko) 2011-08-08
CN101878541B (zh) 2013-01-09
JP4892445B2 (ja) 2012-03-07
US20100219436A1 (en) 2010-09-02
WO2009044698A1 (ja) 2009-04-09
CN101878541A (zh) 2010-11-03

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees