TWI370329B - Sublayer coating-forming composition containing metal oxide for lithography - Google Patents

Sublayer coating-forming composition containing metal oxide for lithography

Info

Publication number
TWI370329B
TWI370329B TW094135723A TW94135723A TWI370329B TW I370329 B TWI370329 B TW I370329B TW 094135723 A TW094135723 A TW 094135723A TW 94135723 A TW94135723 A TW 94135723A TW I370329 B TWI370329 B TW I370329B
Authority
TW
Taiwan
Prior art keywords
lithography
metal oxide
composition containing
forming composition
containing metal
Prior art date
Application number
TW094135723A
Other languages
English (en)
Other versions
TW200619853A (en
Inventor
Satoshi Takei
Yasushi Sakaida
Keisuke Hashimoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200619853A publication Critical patent/TW200619853A/zh
Application granted granted Critical
Publication of TWI370329B publication Critical patent/TWI370329B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094135723A 2004-10-14 2005-10-13 Sublayer coating-forming composition containing metal oxide for lithography TWI370329B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004299716 2004-10-14

Publications (2)

Publication Number Publication Date
TW200619853A TW200619853A (en) 2006-06-16
TWI370329B true TWI370329B (en) 2012-08-11

Family

ID=36148252

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094135723A TWI370329B (en) 2004-10-14 2005-10-13 Sublayer coating-forming composition containing metal oxide for lithography

Country Status (3)

Country Link
JP (1) JP4793583B2 (zh)
TW (1) TWI370329B (zh)
WO (1) WO2006040956A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4793592B2 (ja) 2007-11-22 2011-10-12 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法
JP5015891B2 (ja) 2008-10-02 2012-08-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜形成基板及びパターン形成方法
JP5015892B2 (ja) 2008-10-02 2012-08-29 信越化学工業株式会社 ケイ素含有膜形成用組成物、ケイ素含有膜形成基板及びパターン形成方法
WO2012133597A1 (ja) * 2011-03-30 2012-10-04 Jsr株式会社 多層レジストプロセスパターン形成方法及び多層レジストプロセス用無機膜形成組成物
JP5970933B2 (ja) * 2011-09-15 2016-08-17 Jsr株式会社 パターン形成方法
JP5756134B2 (ja) 2013-01-08 2015-07-29 信越化学工業株式会社 金属酸化物含有膜形成用組成物及びパターン形成方法
KR101674989B1 (ko) 2013-05-21 2016-11-22 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
WO2015012177A1 (ja) * 2013-07-24 2015-01-29 Jsr株式会社 パターン形成方法
JP6327484B2 (ja) * 2013-10-07 2018-05-23 日産化学工業株式会社 ポリ酸を含むメタル含有レジスト下層膜形成組成物
JP6460899B2 (ja) * 2015-04-24 2019-01-30 積水化学工業株式会社 半導体接合用接着剤
WO2023136260A1 (ja) * 2022-01-14 2023-07-20 Jsr株式会社 半導体基板の製造方法、レジスト下層膜の形成方法及び洗浄液

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1184321A (en) * 1981-06-30 1985-03-19 John C. Marinace Adhesion of a photoresist to a substrate
US4826564A (en) * 1987-10-30 1989-05-02 International Business Machines Corporation Method of selective reactive ion etching of substrates
JP2000010293A (ja) * 1998-06-17 2000-01-14 Jsr Corp 反射防止膜形成用組成物および反射防止膜
JP2000275820A (ja) * 1999-03-24 2000-10-06 Dainippon Ink & Chem Inc 平版印刷版原版およびそれを用いた印刷刷版作製方法
US6890448B2 (en) * 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
JP4320883B2 (ja) * 1999-12-13 2009-08-26 Ｊｓｒ株式会社 レジスト下層膜用組成物
JP2002198495A (ja) * 2000-12-25 2002-07-12 Sony Corp 半導体装置およびその製造方法
JP2002343767A (ja) * 2001-05-14 2002-11-29 Toshiba Corp パターン形成方法
JP3934996B2 (ja) * 2001-06-11 2007-06-20 富士フイルム株式会社 平版印刷版用支持体
US6740469B2 (en) * 2002-06-25 2004-05-25 Brewer Science Inc. Developer-soluble metal alkoxide coatings for microelectronic applications

Also Published As

Publication number Publication date
JP4793583B2 (ja) 2011-10-12
WO2006040956A1 (ja) 2006-04-20
JPWO2006040956A1 (ja) 2008-05-15
TW200619853A (en) 2006-06-16

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