TWI364631B - Methods of removing photoresist from substrates - Google Patents

Methods of removing photoresist from substrates Download PDF

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Publication number
TWI364631B
TWI364631B TW093117509A TW93117509A TWI364631B TW I364631 B TWI364631 B TW I364631B TW 093117509 A TW093117509 A TW 093117509A TW 93117509 A TW93117509 A TW 93117509A TW I364631 B TWI364631 B TW I364631B
Authority
TW
Taiwan
Prior art keywords
carbon
layer
photoresist
substrate
gas
Prior art date
Application number
TW093117509A
Other languages
English (en)
Chinese (zh)
Other versions
TW200502718A (en
Inventor
Erik A Edelberg
Robert P Chebi
Gladys Sowan Lo
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200502718A publication Critical patent/TW200502718A/zh
Application granted granted Critical
Publication of TWI364631B publication Critical patent/TWI364631B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093117509A 2003-06-17 2004-06-17 Methods of removing photoresist from substrates TWI364631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/462,830 US7083903B2 (en) 2003-06-17 2003-06-17 Methods of etching photoresist on substrates

Publications (2)

Publication Number Publication Date
TW200502718A TW200502718A (en) 2005-01-16
TWI364631B true TWI364631B (en) 2012-05-21

Family

ID=33516986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117509A TWI364631B (en) 2003-06-17 2004-06-17 Methods of removing photoresist from substrates

Country Status (8)

Country Link
US (2) US7083903B2 (https=)
EP (1) EP1644776A2 (https=)
JP (1) JP4648900B2 (https=)
KR (1) KR101052707B1 (https=)
CN (1) CN1816773B (https=)
MY (1) MY139113A (https=)
TW (1) TWI364631B (https=)
WO (1) WO2004111727A2 (https=)

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US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
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US7935637B2 (en) * 2007-08-16 2011-05-03 International Business Machines Corporation Resist stripping methods using backfilling material layer
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
KR102699111B1 (ko) 2010-04-13 2024-08-27 지이 비디오 컴프레션, 엘엘씨 이미지들의 멀티-트리 서브-디비젼을 이용한 비디오 코딩
KR101942092B1 (ko) * 2012-07-30 2019-01-25 한국전자통신연구원 유기발광소자 제조방법
US9305771B2 (en) * 2013-12-20 2016-04-05 Intel Corporation Prevention of metal loss in wafer processing
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
CN104821273B (zh) * 2014-09-05 2017-11-28 武汉新芯集成电路制造有限公司 一种去除深孔蚀刻后沟槽内残留物的方法
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
CN105843001B (zh) * 2016-03-28 2020-03-24 武汉新芯集成电路制造有限公司 一种用于含碳多孔材料基底的光刻涂层的去除方法
US10675657B2 (en) * 2018-07-10 2020-06-09 Visera Technologies Company Limited Optical elements and method for fabricating the same
US20230408926A1 (en) * 2020-11-09 2023-12-21 The Board Of Trustees Of The University Of Illinois Plasma-activated liquids

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Also Published As

Publication number Publication date
WO2004111727A3 (en) 2005-07-07
US7083903B2 (en) 2006-08-01
US20040256357A1 (en) 2004-12-23
JP4648900B2 (ja) 2011-03-09
TW200502718A (en) 2005-01-16
KR101052707B1 (ko) 2011-08-01
MY139113A (en) 2009-08-28
EP1644776A2 (en) 2006-04-12
JP2006528418A (ja) 2006-12-14
US20060201911A1 (en) 2006-09-14
CN1816773A (zh) 2006-08-09
CN1816773B (zh) 2010-08-25
KR20060010845A (ko) 2006-02-02
WO2004111727A2 (en) 2004-12-23

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