TWI361842B - Target designs and related methods for nehanced cooling and reduced deflection and deformation - Google Patents

Target designs and related methods for nehanced cooling and reduced deflection and deformation Download PDF

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Publication number
TWI361842B
TWI361842B TW092129502A TW92129502A TWI361842B TW I361842 B TWI361842 B TW I361842B TW 092129502 A TW092129502 A TW 092129502A TW 92129502 A TW92129502 A TW 92129502A TW I361842 B TWI361842 B TW I361842B
Authority
TW
Taiwan
Prior art keywords
target
characteristic
surface area
component
metal
Prior art date
Application number
TW092129502A
Other languages
English (en)
Chinese (zh)
Other versions
TW200422422A (en
Inventor
D Strothers Susan
H Hort Werner
K Mcneil Frederick
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of TW200422422A publication Critical patent/TW200422422A/zh
Application granted granted Critical
Publication of TWI361842B publication Critical patent/TWI361842B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW092129502A 2002-10-24 2003-10-24 Target designs and related methods for nehanced cooling and reduced deflection and deformation TWI361842B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US42147802P 2002-10-24 2002-10-24

Publications (2)

Publication Number Publication Date
TW200422422A TW200422422A (en) 2004-11-01
TWI361842B true TWI361842B (en) 2012-04-11

Family

ID=32176719

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092129502A TWI361842B (en) 2002-10-24 2003-10-24 Target designs and related methods for nehanced cooling and reduced deflection and deformation

Country Status (8)

Country Link
US (1) US20070141857A1 (de)
EP (1) EP1583852A4 (de)
JP (3) JP5057650B2 (de)
KR (1) KR100995085B1 (de)
CN (1) CN100473756C (de)
AU (1) AU2003301622A1 (de)
TW (1) TWI361842B (de)
WO (1) WO2004038059A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090065354A1 (en) * 2007-09-12 2009-03-12 Kardokus Janine K Sputtering targets comprising a novel manufacturing design, methods of production and uses thereof
US8349144B2 (en) * 2010-09-28 2013-01-08 Primestar Solar, Inc. Methods of sputtering using a non-bonded semiconducting target
US9779920B2 (en) * 2013-08-14 2017-10-03 Applied Materials, Inc. Sputtering target with backside cooling grooves
CN111001921A (zh) * 2019-12-25 2020-04-14 宁波江丰电子材料股份有限公司 一种超高纯铜靶材的扩散焊接方法
CN111430051B (zh) * 2020-04-02 2022-02-22 中国核动力研究设计院 金属层熔池传热特性模拟材料、制备方法及应用
KR102707659B1 (ko) * 2021-11-17 2024-09-19 바짐테크놀로지 주식회사 스퍼터링 타겟 접합체

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0106623B1 (de) * 1982-10-05 1990-05-23 Fujitsu Limited Zerstäubungsvorrichtung
JPS60110873A (ja) * 1983-11-17 1985-06-17 Fujitsu Ltd タ−ゲットの冷却方法
JPS61120758U (de) * 1985-01-16 1986-07-30
JPS6342369A (ja) * 1986-08-08 1988-02-23 Fujitsu Ltd スパツタ処理装置
JPS63135964U (de) * 1987-02-24 1988-09-07
JPS63213665A (ja) * 1987-02-28 1988-09-06 Nec Home Electronics Ltd 合金タ−ゲツト
JPS63170460U (de) * 1987-04-24 1988-11-07
JPS63170461U (de) * 1987-04-24 1988-11-07
JPS63312976A (ja) * 1987-06-17 1988-12-21 Matsushita Electric Ind Co Ltd マグネトロンスパッタ装置
JPH01104767A (ja) * 1987-10-16 1989-04-21 Hitachi Ltd スパツタリング用ターゲツト
JPH01132759A (ja) * 1987-11-19 1989-05-25 Matsushita Electric Ind Co Ltd スパッタ用ターゲットとその製造方法
JPH0198159U (de) * 1987-12-18 1989-06-30
US4820397A (en) * 1988-04-04 1989-04-11 Tosoh Smd, Inc. Quick change sputter target assembly
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5409590A (en) * 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
JP2964505B2 (ja) * 1989-11-21 1999-10-18 日本電気株式会社 集積回路装置製造用スパッタリングターゲット
US6689254B1 (en) * 1990-10-31 2004-02-10 Tokyo Electron Limited Sputtering apparatus with isolated coolant and sputtering target therefor
US5171415A (en) * 1990-12-21 1992-12-15 Novellus Systems, Inc. Cooling method and apparatus for magnetron sputtering
JPH0586465A (ja) * 1991-06-28 1993-04-06 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
JPH05132774A (ja) * 1991-11-12 1993-05-28 Fujitsu Ltd スパツタ装置
JPH0625839A (ja) * 1992-01-10 1994-02-01 Sony Corp スパッタ装置及びカソード
US5269899A (en) * 1992-04-29 1993-12-14 Tosoh Smd, Inc. Cathode assembly for cathodic sputtering apparatus
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
JPH08193264A (ja) * 1995-01-13 1996-07-30 Shin Etsu Chem Co Ltd ターゲットの冷却方法
JPH09143708A (ja) * 1995-11-28 1997-06-03 Applied Materials Inc スパッタリング装置のターゲット
TW310880U (en) * 1995-12-05 1997-07-11 Samsung Electronics Co Ltd Sputtering apparatus
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US5863397A (en) * 1997-07-11 1999-01-26 Taiwan Semiconductor Manufacturing Co Ltd. Target mounting apparatus for vapor deposition system
JP3554835B2 (ja) * 1997-08-19 2004-08-18 株式会社小松製作所 バッキングプレートの製造方法
US6340415B1 (en) * 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
JPH11350125A (ja) * 1998-06-12 1999-12-21 Matsushita Electric Ind Co Ltd スパッタリング装置
JP2000219963A (ja) * 1999-01-29 2000-08-08 Vacuum Metallurgical Co Ltd スパッタリング装置用のバッキングプレート
JP2001240960A (ja) * 1999-12-21 2001-09-04 Nippon Sheet Glass Co Ltd 光触媒膜が被覆された物品、その物品の製造方法及びその膜を被覆するために用いるスパッタリングターゲット
US6641701B1 (en) * 2000-06-14 2003-11-04 Applied Materials, Inc. Cooling system for magnetron sputtering apparatus
KR20030064398A (ko) * 2000-09-11 2003-07-31 토소우 에스엠디, 인크 내부 냉각 채널을 갖는 스퍼터 타겟의 제조 방법

Also Published As

Publication number Publication date
JP2011052325A (ja) 2011-03-17
AU2003301622A8 (en) 2004-05-13
TW200422422A (en) 2004-11-01
CN100473756C (zh) 2009-04-01
JP2014051746A (ja) 2014-03-20
US20070141857A1 (en) 2007-06-21
KR100995085B1 (ko) 2010-11-19
WO2004038059A2 (en) 2004-05-06
JP2006503984A (ja) 2006-02-02
JP5057650B2 (ja) 2012-10-24
WO2004038059A3 (en) 2005-05-19
EP1583852A2 (de) 2005-10-12
EP1583852A4 (de) 2008-03-05
CN1751137A (zh) 2006-03-22
KR20050073580A (ko) 2005-07-14
AU2003301622A1 (en) 2004-05-13

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MM4A Annulment or lapse of patent due to non-payment of fees