TWI361297B - - Google Patents

Description

[Technical Field] The present invention relates to a liquid crystal panel manufacturing apparatus and a method of manufacturing a liquid crystal panel using the same. [Prior Art]

The liquid crystal panel is used in various applications because of its high display quality, thinness, and low power consumption. In particular, there is an increasing demand for large-sized liquid crystal devices such as liquid crystal televisions, and performance is expected to be improved. In order to obtain a liquid crystal panel having a local θ ,, it is important to control the orientation of the alignment film for the liquid crystal body to be oriented in a predetermined direction. In the past, a "rubbing method" in which an oriented film was wiped with a cloth was generally used. However, in the case of the rubbing method, there is a problem that the dust is dropped by the dust, or the semiconductor element is broken due to static electricity or the like. Therefore, the technique of the "light directing method" has been attracting attention in recent years. The "light-aligning method" is a technique in which a photoreactive polymer is formed on a substrate, and a polymer is chemically reacted by irradiation with ultraviolet rays or the like to have an orientation function. A discharge lamp which can be applied to a photo-alignment method, for example, a metal vapor discharge lamp to which ruthenium and iridium are added is known (for example, see Patent Document 1). However, the performance and yield of the liquid crystal panel after manufacture may be affected by ultraviolet irradiation conditions or wavelength ranges. In particular, in the manufacture of a liquid crystal panel using a photo-alignment method, if ultraviolet light of a certain wavelength range or less is irradiated, the performance and yield of the liquid crystal panel after the manufacture are greatly reduced, such as -5 - 1361297. [Patent Document 1] Japanese Patent Laid-Open No. Hei 6-275234

SUMMARY OF THE INVENTION [Problems to be Solved by the Invention]

The present invention provides a liquid crystal panel manufacturing apparatus capable of suppressing ultraviolet light irradiation in a wavelength range that affects performance of a liquid crystal panel, and capable of producing a liquid crystal panel having high performance and improved yield, and a liquid crystal panel using the same Production method. [Means to solve the problem]

According to an aspect of the invention, there is provided a liquid crystal panel manufacturing apparatus comprising: a processing chamber for processing a substrate to be processed in which a liquid crystal material containing a photoreactive substance is sealed, and a processing chamber disposed in the processing chamber; A photoreactive substance is reacted to form a plurality of lamps in the alignment portion inside the substrate to be processed, and a filter that faces the lamp and suppresses ultraviolet light penetration in a wavelength range of at least 320 to 36 Onm. According to another aspect of the present invention, there is provided a method for producing a liquid crystal panel, comprising: a filter for suppressing ultraviolet light having a wavelength range of at least 320 to 360 nm in a substrate to be sealed inside a liquid crystal sheet containing a photoreactive substance; The light sheet is irradiated with ultraviolet rays to cause the photoreactive substance to react 'to form an orientation portion inside the substrate to be processed. [Effect of the Invention] -6 - 1361297 According to the present invention, there is provided a liquid crystal panel manufacturing apparatus capable of suppressing ultraviolet light irradiation in a wavelength range which affects performance of a liquid crystal panel and the like, and capable of producing a liquid crystal panel having high performance and improved yield. And a method of manufacturing a liquid crystal panel using the device. [Embodiment] [Best form for carrying out the invention]

Next, an embodiment of the present invention will be described with reference to the drawings. The descriptions of the following figures are in the same or similar parts, and the same or similar symbols are attached. The embodiment shown below is an example of an apparatus and method for embodying the technical idea of the present invention, and the technical idea of the present invention is not to specify the configuration, arrangement, and the like of the constituent parts in the following contents. A substrate to be processed - A substrate 10 to be processed which can be processed by a liquid crystal panel manufacturing apparatus according to an embodiment of the present invention can be described. As shown in the example of Fig. 1, the substrate to be processed 10 is interposed between the first substrate 12 and the second substrate 14 made of glass, and at least a liquid crystal body 17 having an orientation due to an applied voltage and light having photoreactivity are enclosed. Reactive substance (polymer) 18. For the liquid crystal body 17, for example, a base material of an ester type, a biphenyl type, a phenylhexane (PCH) type, a cyclohexyl system, a phenyl chelate D system, or a dioxin system is used. It is preferred that the base metal is mixed with the purpose. A P-ester type 'P-biphenyl type material is most suitable as a liquid crystal material capable of reducing the driving voltage. The tricyclic or tetracyclic base material is most suitable as a liquid crystal material which is resistant to high temperatures and can be stably operated. The PCH system or the 1361297 material is most suitable as a liquid crystal material which is improved in responsiveness and suitable for display of animations and the like. As the W%, a polymer material having an azo compound (azobenzene) shown in Fig. 2 can be used as the polymer body 18. The polymer material ‘having an azo compound is superposed by ultraviolet rays, particularly ultraviolet rays having a wavelength range of 30 〇 to 400, to form a bridging structure. As shown in the figure, the first substrate 12 and the second substrate 14 are bonded together by the sealing portion 19. On the surface of the first substrate 12, a plurality of semiconductor elements 11 such as thin film transistors (TFTs) are arranged. A first transparent electrode 15 is formed on the upper surface of the plurality of semiconductor elements 11. On the other hand, a color filter 13 is disposed on the surface of the second substrate 14. On the surface of the color filter 13, a second transparent electrode 16 is formed. Fig. 3 shows an example of a processing intermediate (liquid crystal panel) 20 after the ultraviolet irradiation of the substrate 10 to be processed of Fig. 1 is performed. When a liquid crystal panel manufacturing apparatus to be described later is used, for example, when ultraviolet rays are applied in a state where a voltage is applied to the substrate to be processed 1 in FIG. 1 , protrusions are formed on the surfaces of the first transparent electrode 15 and the second transparent electrode 16 . The orientation portions 21 and 22 are the bridge structures that overlap the polymer body 18 of Fig. 1 by light irradiation. As shown in Fig. 4, the first substrate 12 is arranged side by side in a predetermined direction. Configuration. As shown in Fig. 5, the erect angle 0 of the orientation portion 21 viewed from the upper surface of the first transparent electrode 15 can be changed, for example, by controlling the voltage applied to the substrate to be processed 10. By the surfaces of the first transparent electrode 15 and the second transparent electrode 16, -8 - 1361297 are respectively disposed with the slanting portions 21, 22, as exemplified in FIGS. 6 and 7, the gaps between the orientation portions 21, 22 The (concave portion) is placed in the liquid crystal body 17. Therefore, the directional restraining force of the liquid crystal body 17 is increased as compared with the case where the orientation portions 21 and 22 are not formed inside the liquid crystal panel 20, and various liquid crystal panels such as response speed, transmittance, cost, and polarization characteristics can be improved. Performance and features.

In the liquid crystal panel manufacturing apparatus of the embodiment, as shown in FIG. 8 , the liquid crystal panel manufacturing apparatus includes a loading unit 2 that can accommodate a plurality of substrates to be processed 10 and a storage unit 2 that can be stored in the loading unit 2 . The inverting portion 3 that is reversed in the upper and lower sides of the substrate 1 to be processed, and the inspection unit 4 that inspects the characteristics of the substrate to be processed 1 that has been transported from the inversion unit 3, and the object that is transported from the inspection unit 4 The ultraviolet irradiation unit (UV irradiation unit) 5 that irradiates the substrate 10 with ultraviolet rays, and the inversion unit 6 that inverts the substrate to be processed 10 that has been transported from the irradiation unit 5 after being irradiated with ultraviolet rays.

A transfer robot arm 25 is disposed inside the carry-in unit 2. The transport robot arm 25 is managed by a computer system (not shown) disposed under the table surface on which the substrate 10 to be processed is placed, and the substrate 1 to be processed to be processed is transported to the inverting unit 3. The inspection unit 4 includes a first inspection device 4a and a second inspection device 4b. The first inspection device 4a and the second inspection device 4b check the orientation state of the liquid body by applying a voltage to the substrate to be processed 1 to check whether the substrate 10 to be processed satisfies a predetermined quality standard. In Fig. 8, although the two inspection devices (the first inspection device 4a and the second inspection device 4b) are exemplified in the example of -9-1361297, the number of inspection devices can be matched with the liquid crystal panel manufacturing device shown in Fig. 8. The processing capacity has increased by several. The UV irradiation unit 5 includes a first UV irradiation device 5a and a second UV irradiation device 5b. The first UV irradiation device 5a and the second UV irradiation device 5b' irradiate the substrate to be processed with ultraviolet rays. The number of UV irradiation devices can be several.

The conveyance of the substrate to be processed 10 which is carried from the reversing unit 3 to the inspection unit 4, the UV irradiation unit, and the reversing unit 6 is a transport robot 64 provided on the path between the reversing unit 3 and the reversing unit 6. get on. The transport robot 62 is managed by a computer system (not shown) provided under the path of the transport robot 62.

A display device 61 is disposed on the outer side of the device. For example, alignment of the placement position of the substrate to be processed 10 conveyed to the inspection unit 4 and the UV irradiation unit 5 can be performed by the display device 61. In addition, a static eliminator (processing sequence) for eliminating static electricity or the like may be attached to the inner surface of the liquid crystal panel manufacturing apparatus. When the processing is performed using the liquid crystal panel manufacturing apparatus shown in Fig. 8, as shown in Fig. 9, As shown in the flowchart, in the step S1, the substrate 2 to be processed is stored in the loading unit 2, and the substrate to be processed 10 is transferred from the loading unit 2 to the inverting unit 3 by the transport robot 25 of Fig. 8 . In step S2 of Fig. 9, the substrate to be processed -10- 1361297 10 which is not shown in Fig. 1 is vertically inverted, and the first substrate 12 on the side on which the semiconductor element 11 is formed is formed above, and the color filter 13 is formed. The second substrate 14 on the side is downward. By inverting, the light is irradiated from the side of the first substrate 12 on the side on which the semiconductor element 1 1 is formed in the UV irradiation portion 5, so that damage of the color filter can be suppressed. Furthermore, the case where the first substrate 12 is above may not be reversed.

In step S3 of Fig. 9, the robot arm 62 is transported, and the substrate to be processed 10 is transported from the reversing unit 3 to the inspection unit 4. In the inspection unit 4, the substrate to be processed 10 is aligned by the display device 61 or the like, and the liquid crystal body 17 inside the substrate 10 to be processed is oriented by applying a voltage to determine whether or not the substrate 10 to be processed is good or not. In the inspection of the step S3, it is determined that the "defective" substrate 10 to be processed is transported from the inspection unit 4 to the outside of the apparatus by the transport robot 62 of Fig. 8. In the inspection of step S3, the substrate 10 to be processed which is "good" is evaluated, and is transported from the inspection unit 4 to the ultraviolet irradiation unit 5 by the transfer robot 62. In the step S4, for example, the ultraviolet ray in the wavelength range of 340 to 400 nm is irradiated to the substrate to be processed 相对 with a relatively large amount of light that is relatively brighter than the ultraviolet ray having a wavelength range of 340 nm or less. The light-reactive (overlapping) of the polymer sealed inside the substrate to be processed 10 is formed as shown in Fig. 3, and the orientation portion 21'22 is formed inside the processing intermediate (liquid crystal panel) 20. The liquid crystal panel 20 is transported from the UV irradiation unit 5 to the inversion unit 6'. In step S5, the reverse unit 6 is arranged to be vertically inverted. In step S6, the liquid crystal panel 20 is transported from the reversing unit 6 to the outside of the liquid crystal panel manufacturing apparatus. -11 - 1361297 (reverse part) A schematic diagram showing an example of the inversion unit 3, which is shown in Fig. 1. The reverse portion 3 has a first adsorption portion 31, a second adsorption portion 32, and a third adsorption portion 33 for vacuum-absorbing the substrate 1 to be processed. The first adsorption unit 31 is disposed at a lower portion of the processing chamber 30, and is moved upward by the first movable portion 34 connected to the first adsorption unit 31. The second adsorption unit 32 is fixed to the torsion portion 35 disposed above the first adsorption unit 31. The third adsorption portion 33 is disposed at an upper portion of the processing chamber, and is moved upward and downward by the second movable portion 36 connected to the third adsorption portion 33. When the substrate to be processed 10 is reversed, the substrate to be processed 10 is placed on the first adsorption portion 31 as shown in Fig. 11(a). Then, the first movable portion 34 (which is omitted in the nth figure) is raised by the first movable portion 34 shown in Fig. 10, and the substrate to be processed 10 is brought close to the first adsorption portion 32. As shown in FIG. 11(b), the first adsorption portion 31 is closer to the first adsorption portion 32, and the substrate to be processed is delivered to the second adsorption portion 32 as shown in FIG. 11(c). At 35 turns, the substrate 10 to be processed is placed above the second adsorption portion 32. Then, as shown in FIG. 11(d), the third movable portion 36 is shown by the second movable portion 36 (omitted in the drawing of FIG. H(d)), and the third adsorption portion 33 is lowered, as shown in FIG. (e), the substrate to be processed is adsorbed below the third adsorption portion 33. (Inspection unit) -12- 1361297 shows a schematic diagram of the first inspection device 4a, and is shown as an example of the inspection unit 4 in Fig. 12. A CCD camera 43 for inspecting the state of the substrate to be processed is disposed above the installation table 41 in the processing chamber 4, where the mounting table 41' for arranging the substrate 1 to be processed is disposed. Below the installation table 41, a backlight irradiation unit 42 is disposed. In the case where the first inspection device 4a is used to inspect the processing substrate 10, as shown in Fig. 13(a), the substrate to be processed is transferred by the robot arm 62.

After the board 10 is placed in the installation table 41, the position adjustment (alignment) of the substrate to be processed 1 is performed by using the CCD camera 43 shown in Fig. 12 while confirming the display device 61 of Fig. 8. Then, as shown in Fig. 13 (b), the connector 44 is attached to the substrate 1 to be processed. As shown in Fig. 13(c), the backlight illuminating unit 42 illuminates light from below the substrate 1〇 to be processed. As shown in Fig. 13(d), the voltage application unit 45 is connected to the application connector 44, and a predetermined voltage is applied from the voltage application unit. The liquid crystal inside the substrate to be processed 10 is oriented in a predetermined direction by applying a voltage. Then, as shown in Fig. 13(e), the measurement range of the substrate to be processed 1 is appropriately selected, and the alignment state of the liquid crystal in the measurement range is confirmed by the CCD camera 43 to determine the good or bad of the substrate to be processed 10 . (UV irradiation unit) - overall configuration - A schematic diagram showing the first UV irradiation device 5a, which is shown as an example of the UV irradiation unit 5 in Fig. 14. The first UV irradiation device 5a includes a processing chamber 50 for processing the substrate 10 to be processed, and a processing chamber 50 - 13 - 1361297, and irradiates ultraviolet rays to the substrate to be processed, and forms an orientation portion inside the substrate 10 to be processed. 21, 22 (refer to Fig. 3), a plurality of lamps 52, and a filter 53 that faces the lamp 52 and suppresses ultraviolet light penetration in a wavelength range of 340 nm or less. In Fig. 14, although a plurality of lamps 52 are positioned above the processing chamber 50, the position of the lamps 52 may be appropriately changed depending on the position of the substrate to be processed 10.

Above the plurality of lamps 52, mirrors 57 for uniformizing the illumination light from the lamps 52 are disposed. As shown in Fig. 15, it is also possible to arrange a plurality of auxiliary reflecting plates 58 between the lamp 52 and the filter 53. In the example of Fig. 15, an inductor for detecting illuminance may be disposed inside the auxiliary reflecting plate 58, and the angle of the auxiliary reflecting plate 58 may be freely changed in accordance with the detection result of the sensor. Further, the arrangement interval of the plurality of lamps 52 is such that when the outer diameter of the lamp is D and D is 25 mm or less, the center-to-center spacing (light distance) of the plurality of lamps 52 is 5D to 6D, whereby the substrate to be processed can be processed. 10 Irradiation of ultraviolet light with less illuminance intensity. Furthermore, the D is 20~

In the case of 33 mm, the lamp distance can also be 3D to 6D. With respect to the first UV illuminating device 5a of the embodiment exemplified in Fig. 14, the lamp pitch of the lamp shape D of 27.5 mm is 7D to 8D, and the intended purpose can also be achieved. Further, in the case where the outer shape D' of the cooling pipe 1 (described later in Fig. 25) is 70 mm, uniform ultraviolet rays can be irradiated even when the lamp pitch is 4D. As shown in Fig. 17, a first illuminometer 5 5 and a second illuminance meter for measuring the illuminance of the lamp 52 are disposed in the vicinity of the center portion of the lamp 52 when viewed in the longitudinal direction (axial direction) of the lamp 52. 5 6. As shown in Fig. 14, the first illumination - 14 - 1361 297 gauge 55 and the second illuminance meter 56 can be arranged one above each of the plurality of lamps 52. The first illuminance meter 55 and the second illuminance meter 56 are connected to the lamp control device 7, and can control the illuminance of the first illuminometer 55 and the second illuminometer 56 to control the electric power of the lamp 52. Furthermore, it is okay to arrange only one illuminometer above the lamp 52.

For example, an illuminometer having a peak 値 sensitivity in a wavelength range of 340 to 3 70 nm can be used as the first illuminometer 55. As a result, it is possible to detect the luminescence peak at a wavelength of 3 6 5 nm of the lamp 52 to be described later with higher precision, and it is possible to more accurately detect the overlap and the overlap of the polymer 18 suitable for the substrate 10 to be processed in FIG. 1 . The irradiation 波长 in the wavelength range in which the deterioration of the quality of the substrate 10 is suppressed is processed. An example of the spectral sensitivity of the optimum illuminometer (UV-35) is shown in Fig. 18 as the first illuminance meter 55. A wavelength range different from that of the first illuminometer 55, for example, an illuminometer having a peak-to-peak sensitivity between a wavelength range of 305 to 320 nm, may be used as the second illuminance meter 56. As a result, it is possible to detect the illuminating peak of a wavelength of, for example, 313 nm, which is likely to cause the overlapping of the polymer of the substrate to be processed 10 in FIG. 1 and the quality of the substrate to be processed 10 to be lowered. Fig. 19 shows an example (UV-31) of the spectral sensitivity of the optimum illuminometer as the second illuminance meter 56. Inside the processing chamber 50 shown in Fig. 14, a workstation 51 for arranging the substrate 10 to be processed is provided. A cooling plate 54 that cools the substrate to be processed may also be disposed on the workstation 51. Further, in order to control the cooling plate 54 and control the temperature rise of the substrate to be processed 10 due to the light from the lamp 52, the substrate temperature control device may be disposed at 8°, and the operation -15-1361297 station 51 may be disposed. The movement control device 9 that moves in the longitudinal direction of the substrate 10 to be processed. Further, in the processing chamber 50, a voltage application control device 61 for applying a voltage to the substrate to be processed 10 for promoting or controlling the formation of the alignment portions 21, 22 (see Fig. 3) formed inside the substrate to be processed 1 is connected. According to the detailed structure described later, the first UV irradiation device 5 a shown in FIG. 14 can suppress ultraviolet light irradiation in a wavelength range that affects the performance of the liquid crystal panel after the production, and the like. Create a high-performance, high-quality LCD panel. The lamp 52 shown in Fig. 17 can be used, for example, in the inside of the airtight container 506 made of quartz having ultraviolet ray permeability, and is disposed outside the electrodes 521 and 522 made of tungsten (W) or the like. Ultraviolet lamps with a diameter of 27.5 mm, a thickness of 1.5 mm, a luminous length of LlOOOmm, a lamp voltage of 1275 V, and a lamp voltage of 13.5 A. Inside the hermetic container 520, an inert gas such as argon (Ar) gas is sealed. Such an ultraviolet lamp is most preferably used in the interior of the airtight container 520, and is sealed with a metal-encapsulated lamp having mercury (Hg) and at least one or more wavelengths other than the mercury spectrum in the wavelength range of 300 to 400 nm. For example, it can be used for airtightness. A high-pressure mercury lamp in which mercury or a small amount of inert gas is injected into the inside of the container 520 or a high-intensity discharge lamp or the like in which a metal halide mercury lamp of mercury and a halogenated metal is sealed inside the airtight container 520. In particular, the lamp 52' which is most suitable for processing the substrate 10 to be processed shown in Fig. 1 is a bismuth-based metal halide gold-silver lamp in which mercury and strontium halide-160-1361297 are sealed inside the airtight container 52A. For example, in the case of using a cerium-based metal halide mercury lamp in which mercury is 1.6 mg/cc, cesium iodide (Til) O.lmg/cc, and argon is 1.33 kPa, as shown in Fig. 20, the wavelengths are 352 nm, 365 nm, and 3 78 nm. The larger luminescence peak, the electrical characteristic at this time is about 1 250V '14.0A.铊(T1) is strong in the wavelength range of 352nm and 378nm

The bright line spectrum has an effect of reducing the luminous intensity of mercury. Therefore, for example, by suppressing mercury emission at 313 nm, ultraviolet light having a relatively large amount of light emission in a wavelength range of 340 to 400 nm can be emitted. Therefore, in the liquid crystal panel manufacturing apparatus of Fig. 14, by using the lamp 5 2 containing ruthenium, it is possible to reduce the irradiation of ultraviolet rays having a wavelength range of 340 nm or less which greatly affects the characteristics of the liquid crystal panel 20 of Fig. 3 . In the case where the inner diameter of the lamp is DS30 mm, the amount of encapsulation of the antimony halide is preferably selected from 0.01 mg/cc SMS 0.3 mg/cc. More preferably, when the inner diameter D of the lamp is DS 30 mm and the luminous length L is 500 mm 'LS 2500 mm, the sealing amount Hg from mercury is 0.9 mg/cc $ HgS 2.0 mg / cc, and the sealing amount of the antimony halide is 0.012 mg / cc. It is advisable to choose among SM $ O.lmg/cc. The amount of ruthenium halide enclosed is 〇3 mg/cc, whereby uniform illuminance can be obtained for the axial direction of the lamp 52, so that uniform irradiation of ultraviolet rays to the substrate 1 can be achieved. Moreover, it can be understood from the second drawing that the peak of the illuminance at a wavelength of 313 nm which affects the characteristics of the substrate to be processed 10 can be reduced by 5 〇% as compared with the peak of the illuminance at a wavelength of 3 to 65 nm. It can further enhance the characteristics of the liquid crystal panel after ultraviolet irradiation. Further, on the one hand, if the amount of the ruthenium halide is 0.3 mg/cc or more, the ruthenium enclosed in the airtight container 520 is unevenly dispersed in the longitudinal direction of the lamp 25 due to enthalpy generation. The luminescence is separated and the lamp performance is lowered. The lamp 52 can also utilize an iron-based metal halide mercury lamp having a spectrum as shown in Fig. 21. For example, an iron-based metal-based mercury lamp in which a discharge medium of 1.2 mg/cc of mercury, 0.027 mg/cc of iron, and 0.1 mg/cc of mercury iodide is sealed in an airtight container can be understood from Fig. 21, and has a wavelength of 365 nm. The largest luminescence peak. As shown in Fig. 22, when the iron-based metal halide mercury lamp is compared with the lanthanide-based metal halide mercury lamp, the illuminance at a wavelength of 3 40 nm or less which affects the characteristics after the production of the substrate 10 to be processed in Fig. 1 is affected. When the wavelength is integrated for comparison, it is found that the iron-based metal halide mercury lamp is more than twice as large as the lanthanum metal halide mercury lamp. Therefore, in order to suppress the light emission from the wavelength range of the lamp 52 having a wavelength of 3 4 Onm or less, it is preferable to use a lanthanide metal halide mercury lamp as compared with an iron-based metal halide mercury lamp. Further, since ultraviolet rays having a wavelength range of 340 nm or less are also prevented from penetrating by the filter 53 to be described later, when a lamp emitting ultraviolet light having a relatively wide wavelength range that can be irradiated is used, an iron-based metal halide mercury lamp is used. Lanthanide metal halide mercury lamps are preferred. Fig. 23 is a view showing a comparative example of the spectral distribution of the iron-based metal halide mercury lamp of the embodiment and the mercury lamp of the comparative example. The mercury lamp has a large luminescence peak in the wavelength range of 365 nm, 313 nm, and 303 nm. Focusing on the illumination at 3 65 nm, the iron-based metal halide mercury lamp has a illuminance of about 550 nm which is most suitable for the irradiation of the substrate 10 by the -18-1361297, although it is reduced by about 45% compared with the mercury lamp. In 380 nm, there is a higher illuminance as a whole. Since the mercury lamp has a high luminescence peak in the wavelength range of 3 40 nm or less which changes the characteristics of the substrate to be processed 10, the iron-based metal halide mercury lamp is used in consideration of the performance improvement of the substrate to be processed. Mercury lamps are suitable.

(As shown in the example of Fig. 23, when the illuminance is measured using an iron-based metal halide mercury lamp having an emission length L of 1 800 mm, a substantially uniform illuminance is obtained for the axial direction of the lamp 52, so the iron system The metal halide mercury lamp is most suitable for the case where the substrate to be processed 1 is enlarged. Further, in the case of the UV irradiation device 5a shown in Fig. 14, even an iron-based metal halide having an emission length L of 2500 mm is used. The mercury lamp can actually obtain the same effect as that of Fig. 24. One lamp water-cooling structure _ Fig. 25 is a schematic view showing the peripheral portion of the lamp 52 shown in Fig. 14. The lamp 52 is surrounded by the inner tube. A cooling pipe 1 of a two-layer pipe structure of 101 and an outer pipe 1〇2. Between the inner pipe 101 and the outer pipe 102, water (pure water) for cooling the lamp 52 is housed. Between the 〇1 and the outer tube 102, there is a spectral characteristic, and a heat absorbing filter 1 〇3 for absorbing infrared rays from the lamp 52 is disposed around the lamp 52. As an endothermic filter 103 , which absorbs infrared rays and has a wavelength that can selectively penetrate about 300 to 400 nm. An endothermic filter of a range of ultraviolet light splitting characteristics is preferable. For example, as shown in Fig. 26, an endothermic filter having a peak of spectral transmittance in a wavelength range of 260 -19 - 1361297 to 4 〇 Onm can be used. By arranging the endothermic filter 1〇3 having the spectral characteristics as shown in Fig. 26, it is possible to penetrate the ultraviolet light in the wavelength range in which the polymer 18 inside the substrate 1 is efficiently reacted. At the same time, the irradiation of the infrared rays causing the heating of the substrate to be processed 10 is suppressed, so that the deterioration of the characteristics of the substrate to be processed 10 can be further suppressed, and the yield and performance of the liquid crystal panel after the manufacturing can be improved. - The filter 1 is shown in Fig. 14. The filter 53 can be an absorption type optical filter in which an absorber is added to a substrate made of quartz or glass, or a multilayer film type in which a plurality of layers of a film are vapor-deposited on a plate made of quartz and glass. The light filter 53 is preferably a low-pass chopper having a short-wavelength cutoff wavelength of 320 to 360 nm. Further, in the filter 53 of the embodiment, " Cutoff wave It refers to the cutoff wavelength defined by the wavelength at normal incidence (〇°). Especially with regard to the multilayer film filter, once the incident angle of ultraviolet light becomes large, the cutoff wavelength shifts to a short wavelength. For example, at a cutoff wavelength of 340 nm. In the case of the multilayer film filter, the incident angle is 30° and 60°, whereby once the cutoff wavelength is around 33 〇 nm and 3 10 nm, it moves to the short wavelength side, and the cutoff wavelength to the incident angle. The change of the other example is that in the absorption filter with a cutoff wavelength of 320 nm, even if the incident angle of the ultraviolet light changes, the cutoff wavelength is ensured to be 3 20 nm, and the transmittance at 365 nm is at the incident angle. 50. 60. 70. , reducing the characteristics of 95%, 85%, and 70%. -20- 1361297 In order to promote the overlapping of the polymer bodies 18 inside the substrate 10 to be processed, the orientation portions 21 and 22 are formed, and the characteristic change of the liquid crystal panel 20 after the manufacture is reduced. Therefore, the filter 53 for controlling ultraviolet irradiation can be used. A multilayer film filter having a cutoff wavelength of 320 to 360 nm, preferably 330 to 350 nm, and a change in the cutoff wavelength when the incident angle of ultraviolet rays is 0 to 60° is -15 nm < N < 15 nm An absorption filter having a cutoff wavelength of 320 nm to 340 nxn.

- Lamp control device - The lamp control device 7 shown in Fig. 14 has a lamp power control unit 71, an illuminance determination unit 72, an integrated light amount determination unit 73, and a uniformity determination unit 74, as shown in Fig. 29. The lamp control device 7 may be provided with a memory device 75 for storing various data such as the setting of the illuminance 适于 which is suitable for the processing of the substrate 10 to be processed. The lamp power control unit 71 is determined based on the illuminance determination unit 72 and the integrated light amount. The result of the determination by the unit 73 controls the power of the lamp. The illuminance determination unit 72 reads the setting data of the illuminance 记忆 stored in the memory device 75, etc., and determines whether or not the illuminance 检测 detected by the first illuminometer 55 or the second illuminance meter 56 is within a predetermined range. In the first table, the relationship between the illuminance and the irradiation time when the substrate 10 to be processed shown in FIG. 1 is processed, the orientation state (overlapping state) of the orientation portions 21 and 22 shown in FIG. 3, the deterioration, and the production efficiency are shown. . The "illuminance 値" is a 检测 which is detected by using the illuminance meter having the spectral sensitivity shown in Fig. 18 as the first illuminance meter 5 5 . In the following, -21 - 1361297 "Irradiation time" is the time from when the lamp 52 is actually irradiated to the substrate 1 to be processed in Fig. 1 .

As shown in the first table, when the illuminance 检测 detected by the first illuminometer 55 is 25 mW/cm 2 or less, the overlapping effect of the polymer body 18 of the first embodiment can be obtained, but the liquid crystal panel 20 after the production is deteriorated. Production efficiency has also declined. Although the illuminance 40 is preferably 40 mW/cm2 or more, the overlap is promoted and the production efficiency is also improved. However, if the damage to the polymer body is large if it is higher than I00 mW/cm2, the overlap effect can be obtained by suppressing at 75 mW/cm2. Moreover, the liquid crystal panel 20 after the manufacture is also less likely to be deteriorated. Therefore, when the illuminance determination unit 72 determines that the substrate 10 to be processed in the first embodiment is processed, the illuminance 値 of the first illuminometer 55 is, for example, 25 mW/cm 2 or more, or preferably 25 to 100 mW/cm 2 . Or, more preferably, it is in the range of 40 to 75 mW/cm2, and depending on the determination result, it is preferable to control the voltage or current of the lamp 52 by the lamp power control unit 71.

In general, the lamp 52 tends to gradually decrease in light amount as it approaches the life. Therefore, the illuminance 检测 detected by the first illuminometer 55 or the like is also lowered simultaneously with the passage of time. In order to irradiate the ultraviolet light to the plurality of substrates to be processed 10 with an equal amount of light, the lamp 52 is deteriorated as the lighting time is prolonged. When the illuminance is desired to be lowered, the voltage or current is raised to maintain the illuminance at a predetermined level or higher. In the liquid crystal panel manufacturing apparatus shown in Fig. 14, the illuminance determination unit 72' can detect the illuminance 値 of the first illuminometer 55 or the second illuminance meter 56, and the first illuminance meter for the lighting time of the lamp 52. 55 or the second illuminometer 56 -22- 1361297 when the amount of change in illuminance 约为 is less than 1 〇% 'to control the voltage or current of the lamp by returning the illuminance 既 to a predetermined 。. Further, the "lighting time" is an integrated data indicating when the light 5 5 is actually lit. The integrated light amount determining unit 73 determines whether or not the "integrated light amount" is equal to or greater than a predetermined value. "The integrated light quantity j is the photo detected by the first illuminance meter 55.

The product is shown as the product between the illumination and the illumination of the lamp 52. For example, when the substrate 10 to be processed in Fig. 1 is processed, the integrated light amount determining unit 73 can determine whether or not the integrated light amount is 2000 raJ/cm 2 or more. When the integrated light amount is 2000 mj/cm2 or more, the polymer 18 inside the processed 10 can obtain an overlapping effect, and it is difficult to cause deterioration of characteristics of the liquid crystal panel of Fig. 3. On the other hand, when it is 2000 mJ/cm2 or less, the formation of the orientation portions 21 and 22 inside the liquid crystal panel of Fig. 3 cannot be sufficiently performed, so that the performance is deteriorated. The uniformity determination unit 74 determines whether or not the calculated “uniformity j is a predetermined value or more from the maximum illuminance 値 and the minimum illuminance 检测 detected by the first illuminometer 55 or the second illuminometer. The “uniformity” is as follows. As shown in Fig. 30, focusing on the relationship between the longitudinal direction of the substrate 10 to be processed and the illuminance, the maximum illuminance 照 of the illuminance 检测 detected by the first illuminometer 55 (or the second illuminometer 56) is applied ( MAX ) and the minimum illumination 値(MIN ) ^ represent the ratio of the uniformity of the illuminance expressed by the uniformity (%) = ( 1 - ( MAX - MIN ) / ( MAX + MIN ) ) χ 1 〇〇. -23- 1361297

As shown in the second table, in the case where the substrate to be processed shown in Fig. 1 is processed, the uniformity in the case of calculation using an illuminometer having a peak 値 sensitivity in the wavelength range of 340 to 37 〇 nm is 75% or more, thereby improving various performances such as response speed, transmittance, contrast, and polarization (light) characteristics of the liquid crystal panel 20 of FIG. Therefore, the uniformity determination unit 74' determines whether or not the uniformity in the case of being calculated by the first illuminance meter 55 is 75% or more in the case where the substrate 1 to be processed shown in Fig. 1 is processed. As a result of the determination, it is preferable that the lamp power control unit 71 controls the voltage or current of the lamp. -Substrate temperature control mechanism -

Fig. 31 is a schematic view showing a state in which the cooling plate 54 shown in Fig. 14 is viewed from above. The cooling plate 54 is made of, for example, metal such as aluminum, and has a cooling water flow path 54 1 through which cooling water flows. The circulation speed of the cooling water can be controlled by the substrate temperature control device shown in Fig. 14, and the predetermined speed does not matter. As shown in Fig. 14, although the temperature can be controlled by the cooling plate 54 as a whole, as shown in Fig. 32, a cold air nozzle 542 may be provided inside the processing chamber 50, and cold air may be combined to cool. In the example shown in Fig. 32, the cold air nozzle 542 is disposed along the longitudinal direction of the substrate 10 to be processed, and cool air of, for example, 5 to 15 °C is blown from the cold air nozzle 542. Thereby, the substrate temperature of the substrate 10 to be processed is 7 ° C or less, preferably 20 to 50 ° C. Further, a fan that blows cold air may be provided instead of the cold air nozzle. Since the polymer 18 and the liquid crystal - 24,361,297 body 17 enclosed in the inside of the substrate to be processed have thermoplasticity, they may cause inferiority when exposed to high temperatures. In particular, when the substrate to be processed 10 is irradiated with ultraviolet rays having a wavelength of 3 to 40 nm or more, whereby the substrate temperature of the substrate 10 to be processed reaches 200 °C, the characteristic deterioration is remarkable.

According to the first UV irradiation device 5a shown in Fig. 3.2, since the cold air nozzle 542 and the cooling plate 54 are provided, the temperature of the substrate 10 to be processed can be suppressed to a predetermined temperature or lower, and therefore the polymer 18 and the liquid crystal body 17 are When the deterioration is reduced, the response speed, the transmittance, and the 'polarization (light) characteristics of the liquid crystal panel after the manufacture can be improved, and various characteristics can be improved. Further, the driving of the cold air nozzle 5 42 and the cooling plate 54 can be selected by the size of the substrate 1 to be processed. For example, when the substrate to be processed 10 of 550 mm x 650 mm is processed, it is sufficient to cool only the cold air nozzle 542. For example, when the substrate to be processed 10 of 1 500 mm x 800 mm is processed, etc., when a large substrate is used, the cold air nozzle 542 and the cooling plate may be used together. 54. On the other hand, when the cold air is blown in the opposite direction, it is desirable to drive only the cooling plate 54 when the surface temperature of the substrate 10 to be processed is uneven. As shown in FIG. 32, a temperature sensor 543 for measuring the temperature of the substrate may be disposed in the processing chamber 50. The substrate temperature control device 8 selectively controls the cooling plate 54 and the cold air corresponding to the detection of the temperature sensor 543. The drive of the nozzle 542. The amount of light that is irradiated onto the surface of the substrate 10 to be processed by a substrate movement control means _ may be uneven due to the distance between the lamp 52 and the substrate 10 to be processed and the reflection of the light of the reflector. Therefore, in Fig. 33, after the ultraviolet light is irradiated for a predetermined time at the position indicated by the solid line, the workstation 51 can be moved only by the distance W from the longitudinal direction of the substrate 10 to be processed by the movement control device 9. This makes it possible to make the light irradiated onto the substrate 1 to be processed more uniform than in the case where the workstation 51 is not moved. Although the distance W can be above the illuminance from the lamp 52,

The effect is changed within the range of illumination, but considering the characteristics of the lamp 52, it is preferable to move about 1 / 2 of the lamp pitch. For example, a metal halide mercury lamp having an outer diameter of 2 7.5 mm and an emission length of 1000 nm is used as the lamp 52, and the substrate 10 to be processed shown in Fig. 1 of 550 mm x 650 mm is processed in the wavelength range of 340 to 3 70 nm. The illuminance meter (the first illuminance meter 55) having the peak-to-peak sensitivity is irradiated with 75 mW/cm 2 for 25 seconds, and then the substrate 10 to be irradiated is moved toward the longitudinal direction of the substrate by W = 125 mm, in 75 mW/cm 2 . Further irradiation for 25 seconds. Thereby, the reaction unevenness generated by the liquid crystal panel 20 can be suppressed, and the production of the liquid crystal panel 20 having high performance can be realized.

(Manufacturing Method of Liquid Crystal Panel Using Ultraviolet Irradiation Device) As shown in step S11 of Fig. 34, the first substrate UV irradiation device 5a shown in Fig. 14 is used to process the substrate 10 to be processed shown in Fig. 1. Next, install first. For example, the installation system can input various setting data driven by the lamp control device 7, the substrate temperature control device 8, the movement control device 9, and the voltage application control device 61 to a memory device (not shown). Further, the substrate to be processed 10 for testing is placed on the workstation 51, and the first illuminance meter 55 which derives the illuminance of the surface of the substrate 10 to be processed and the illuminance thereof is set in addition to the processing conditions set in the processing chamber 50, in addition to -26-1361297. And the relationship between the illuminance 第二 of the second illuminometer 56. Thereby, the relationship between the actual illuminance and the surface of the substrate to be processed 10 is calculated based on the illuminance 値 of the first illuminometer 55 and the second illuminometer 56.

When the mounting is completed, the substrate 40 to be processed which is actually processed is placed on the cooling plate 54 of Fig. 14 by the transfer robot 62' shown in Fig. 8, and the cooling of the substrate 10 to be processed is started in step S12. The cooling method may be cooled by cold air of 5 to 15 ° C depending on the size of the substrate 10 to be processed. As shown in FIG. 32, the temperature of the substrate may be detected by the temperature sensor 543, and the substrate temperature may be controlled, for example. The cooling plate 54 and the cold air nozzle 542 are controlled by the substrate temperature control device 8 at 70 ° C or lower, and then a predetermined voltage (for example, 0 to 30 V) is applied to the substrate 10 to be processed in step S13. In step S14, in a state where a voltage is applied to the substrate to be processed 1 ,, for example, under the condition that the illuminance 値 of the first illuminometer 5 5 is 75 mW/cm 2 , the light is irradiated for 25 seconds. Then, in step S15, the workstation 51 is moved to the longitudinal direction of the substrate 10 to be processed, and in step S16, in a state where a voltage is applied to the substrate to be processed 10, for example, the illuminance 第一 of the first illuminometer 55 is 75 mW. Under the condition of cm2, the light is illuminated for 25 seconds. In the lamp control device 7 of Fig. 14, the illuminance 値 of the first illuminance meter is 40 mW/cm2 or more, and the product of the illuminance 第一 of the first illuminance meter 55 and the irradiation time of the lamp is 2000 mJ/cm2 or more. , let the ultraviolet light be irradiated to the substrate 10 by -27-13361297. Further, in the case where the amount of change in the illuminance 第一 of the first illuminometer 55 with respect to the irradiation time of the lamp is 10% or less, the electric power of the lamp is controlled. The uniformity was calculated, and the power of the lamp was controlled so that the uniformity was 75% or more. The processed substrate to be processed 1 is carried out from the processing chamber 50 of Fig. 14 in step S17, and is transported to the inverting portion 6 by the transfer robot 62 of Fig. 8.

According to the UN irradiation unit 5 (first UV irradiation device 5a) according to the embodiment shown in Fig. 8, it is possible to suppress ultraviolet light having a wavelength range of 340 nm or less which affects the performance of the liquid crystal panel after the production, so that it can be manufactured. A high-performance, high-quality LCD panel. (Other embodiments)

The present invention has been described in terms of the above embodiments, but the description and drawings of one part of the production cost can be understood, and the present invention is not limited thereto. From this disclosure, various alternative embodiments, embodiments, and techniques of operation will be apparent. - Harmful wavelength illuminance determining means - In the above-described embodiment, the illuminance determining unit 72 shown in Fig. 29 determines the illuminance based on the illuminance 値 of the first illuminometer 55, and an example of controlling the electric power of the lamp based on the determination result. However, the illuminance determination unit 72 shown in Fig. 2 can determine the illuminance of the wavelength (noxious wavelength) that affects the characteristics of the liquid crystal panel based on the illuminance 第二 of the second illuminometer 56. As shown in Fig. 35(a), in the case of processing the substrate to be processed -28·1361297 10 shown in Fig. 1, if the wavelength is 340 nm or less, ultraviolet rays, especially the wavelength of the luminescence peak of mercury 313 nm. When the light is irradiated onto the oblique portion of the substrate 10 to be processed, as shown in Fig. 35(b), white spots are left on the liquid crystal panel 20 after the irradiation. The third table shows the relationship between the influence of panel deterioration by ultraviolet rays having a wavelength of 313 nm when the second illuminometer 56 that detects ultraviolet rays having a wavelength of 31 3 nm is used.

As shown in the third table, when the illuminance 値 is lmW/cm2 or less, it is difficult to cause panel deterioration as shown in Fig. 35(b), but when the illuminance 値 is lmW/cm2 or more, the 35th is generated. The proportion of panel deterioration shown in (b) becomes high. Therefore, when the illuminance 値 of the second illuminometer 56 is lmW/cm 2 or more, the illuminance determination unit 72 shown in FIG. 29 may warn the user, for example, via a display device (not shown). A mechanism (not shown) for adjusting the angle of the mirror 57 or the auxiliary reflector 58 shown in Fig. 15 is controlled. As such, the present invention may of course include various embodiments and the like which are not described herein. Therefore, the technical scope of the present invention is determined by the above description only in accordance with the designation of the invention in the scope of the appropriate patent application. Description of the Table The first table is a table showing the relationship between the illuminance 値, the irradiation time, the overlapping effect, the deterioration, and the production efficiency when the substrate to be processed shown in Fig. 1 is processed. Table 2 is a table showing the relationship between uniformity and panel performance. The third table is a table showing the relationship between the illuminance 面板 and the panel deterioration. 29 1361297 [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing an example of a substrate to be processed according to an embodiment of the present invention. Fig. 2 is a view showing a specific example of the polymer body 1 of Fig. 1. Fig. 3 is a cross-sectional view showing an example of a liquid crystal panel in which the substrate to be processed of Fig. 1 is irradiated with ultraviolet rays. Fig. 4 is a view showing an orientation state of the orientation portion 20 of Fig. 3

Stereo picture. Fig. 5 is a schematic view showing an upright angle 0 of the orientation portion 21 of Fig. 3. Fig. 6 is a cross-sectional view showing the state of the liquid crystal cell of the liquid crystal panel of Fig. 3 (in the case where no voltage is applied). Fig. 7 is a cross-sectional view showing the state of the liquid crystal body of the liquid crystal panel of Fig. 3 (when a voltage is applied). Figure 8 is a view showing the manufacture of a liquid crystal panel according to an embodiment of the present invention.

A top view of an example of the overall configuration of the device. Fig. 9 is a flow chart showing the operation of the liquid crystal panel manufacturing apparatus of Fig. 8. Fig. 10 is a detailed schematic diagram showing the inversion portion of Fig. 8. Fig. 11 is a schematic diagram showing an example of a specific operation of the inversion portion of the first diagram. Fig. 12 is a detailed schematic diagram showing an inspection unit of Fig. 8. Fig. 13 is a schematic diagram showing an example of a specific operation of the inspection unit of Fig. 12. -30- 1361297 Fig. 14 is a detailed schematic view showing the UV irradiation unit of Fig. 8. Fig. 15 is a schematic view showing an example of a peripheral structure of the lamp of Fig. 14. Fig. 16 is a schematic view showing an example of the structure of the periphery of the lamp of Fig. 14. Fig. 17 is a schematic view showing the longitudinal direction (axial direction) of the lamp of Fig. 14.

Fig. 18 is a graph showing the spectral sensitivity of the illuminometer which is most suitable for the first illuminometer of Fig. 17. Fig. 19 is a graph showing the spectral sensitivity of the illuminometer which is most suitable for the second illuminometer of Fig. 17. Fig. 20 is a graph showing the distribution of the light distribution of the lanthanide metal halide mercury lamp. Fig. 21 is a graph showing the distribution of the light distribution of the iron-based metal halide mercury lamp. Fig. 22 is a graph showing the comparison of the spectral distribution of the iron-based metal halide mercury lamp and the lanthanide metal halide mercury lamp. Fig. 23 is a graph showing the comparison of the spectral distribution of the iron-based metal halide mercury lamp and the mercury lamp. Fig. 24 is a graph showing the illuminance distribution in the axial direction of the iron-based metal halide mercury lamp. Fig. 25 is a cross-sectional view showing a peripheral portion of the lamp shown in Fig. 14. Fig. 26 is a graph showing the spectral transmittance of the endothermic filter shown in Fig. 25. -31 - 1361297 Figure 27 is a graph showing the relationship between the incident angle and the transmittance of the filter shown in Fig. 14 (the first). Fig. 28 is a view showing the filter shown in Fig. 14. Coordinate map of relationship between incident angle and transmittance (Part 2) Fig. 29 is a block diagram showing a specific example of the lamp control device shown in Fig. 14.

Fig. 30 is a graph showing the calculation method of the uniformity according to the embodiment of the present invention. Fig. 31 is a plan view showing a cooling plate according to an embodiment of the present invention. Fig. 32 is a schematic view showing a substrate temperature control mechanism according to an embodiment of the present invention. Figure 33 is a schematic view showing a substrate movement control mechanism according to an embodiment of the present invention.

Figure 34 is a flow chart for explaining an example of a method of manufacturing a liquid crystal panel according to an embodiment of the present invention. Fig. 35 is a view showing the influence of the harmful wavelength range (313 nm) on the characteristics of the substrate to be processed, Fig. 35(a) is a plan view showing the substrate to be processed during irradiation, and Fig. 35(b) is a view showing the substrate after irradiation. Top view of the liquid crystal panel β [Description of main components] 10: substrate to be processed 50: processing chamber - 32 - 1361297 52 : lamp 53 : filter 55 : first illuminometer 56 : second illuminometer 6 4 : voltage application Control device

First table illuminance [mW/cm2] Irradiation time [sec] Overlapping effect deterioration Production efficiency 15 375 Δ Δ X 25 225 ◎ Δ X 40 140 ◎ 〇X 50 112 ◎ 〇X 75 75 ◎ 〇〇100 75 ◎ 〇◎ 2 tables

Uniformity [%] Panel performance 100 ◎ 90 ◎ 80 〇 75 〇 70 Δ 50 X 25 X -33- 1361297

Table 3 313 nm illuminance [mW/cm2] Irradiation time [sec] Panel deterioration 0.05 70 ◎ 0.1 70 ◎ 0.2 70 ◎ 0.3 70 〇 0.5 70 〇 1 70 Δ 2 70 X 5 70 X -34-

Claims (1)

The invention is characterized in that the liquid crystal panel manufacturing apparatus includes: a processing chamber for processing a substrate to be processed in which a liquid crystal material containing a photoreactive substance is sealed, and a processing chamber disposed in the processing chamber; Irradiating the substrate to be processed, irradiating the photoreactive substance, and forming a plurality of lamps in the orientation portion inside the substrate to be processed, and a filter that faces the foregoing lamp and suppresses ultraviolet light penetration in a wavelength range of at least 320 to 3 60 nm; the filter is a range of 3 20 to 3 60 nm defined by a cutoff wavelength N defined by including normal incidence. The change in the cutoff wavelength when the incident angle of the ultraviolet light of the filter is 0° to 60° is a filter of a range of 15 nm < N < + 15 nm. 2. A liquid crystal panel manufacturing apparatus comprising: a processing chamber for processing a substrate to be processed in which a liquid crystal material containing a photoreactive substance is sealed, and a processing chamber disposed in the processing chamber to irradiate the substrate to be treated with ultraviolet rays The light-reactive substance is reacted, and a plurality of lamps that form an orientation portion inside the substrate to be processed, and a filter that faces the lamp and suppresses ultraviolet light penetration in a wavelength range of at least 320 to 360 nm are disposed. Above the lamp, a first illuminometer having a peak-to-peak sensitivity between a wavelength range of 340 to 370 nm, and a square-35-1361297 having an illuminance 値 of 25 to 100 mW/cm2 by the first illuminance meter A lamp control device for controlling the power of the lamp, a liquid crystal panel manufacturing device, characterized by comprising: a processing chamber for processing a substrate to be processed in which a liquid crystal material containing a photoreactive substance is sealed, and a configuration In the processing chamber, the substrate to be processed is irradiated with ultraviolet rays, and the photoreactive substance is reacted to form an orientation portion inside the substrate to be processed. A plurality of lights, a first illuminometer having a peak 値 sensitivity in a wavelength range of 340 to 370 nm, facing the lamp and suppressing ultraviolet light having a wavelength range of at least 320 to 3 60 nm, disposed above the lamp And a lamp control device for controlling the power of the lamp in such a manner that the illuminance 値 of the first illuminance meter is 40 to 75 mW/cm 2 . The liquid crystal panel manufacturing apparatus according to any one of claims 1 to 3, wherein The aforementioned photoreactive substance is an azo compound. 5. The liquid crystal panel manufacturing apparatus according to the second aspect of the invention, wherein the lamp is a mode in which the product of the illuminance 前述 of the first illuminance meter and the irradiation time of the lamp is 2000 mJ/cm 2 or more. The substrate to be processed is irradiated with ultraviolet rays. The liquid crystal panel manufacturing apparatus according to the second or third aspect of the invention, wherein the lamp control device is a change amount of the illuminance - -36 - 1361297 of the first illuminance meter for the lighting time of the lamp. The lamp power is controlled in a manner of 1% or less. The liquid crystal panel manufacturing apparatus according to any one of claims 1 to 3, further comprising a voltage applying device that applies a voltage to the substrate to be processed. 8. A method of manufacturing a liquid crystal panel, characterized by having: The substrate to be treated in which the liquid crystal material containing the photoreactive substance is sealed is irradiated with ultraviolet rays through a filter that suppresses ultraviolet light having a wavelength range of at least 320 to 360 nm, and the photoreactive substance is reacted. The process of forming an orientation portion in the inside of the substrate to be processed; wherein the filter has a cutoff wavelength N defined in the case of normal incidence in the range of 320 to 3 60 nm, and an incident angle of ultraviolet rays to the filter is 〇. The change in the cutoff wavelength at ~60° is a filter of the range of -15 nm < N < + 15 nm. -37-