TWI354389B - Radiation emitting device - Google Patents

Radiation emitting device Download PDF

Info

Publication number
TWI354389B
TWI354389B TW096134771A TW96134771A TWI354389B TW I354389 B TWI354389 B TW I354389B TW 096134771 A TW096134771 A TW 096134771A TW 96134771 A TW96134771 A TW 96134771A TW I354389 B TWI354389 B TW I354389B
Authority
TW
Taiwan
Prior art keywords
emitting device
radiation emitting
radiation
layer
contact
Prior art date
Application number
TW096134771A
Other languages
English (en)
Chinese (zh)
Other versions
TW200816539A (en
Inventor
Markus Klein
Ian Stephen Millard
Florian Schindler
Sok Gek Beh
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200816539A publication Critical patent/TW200816539A/zh
Application granted granted Critical
Publication of TWI354389B publication Critical patent/TWI354389B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/254—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising a metal, e.g. transparent gold
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
TW096134771A 2006-09-29 2007-09-19 Radiation emitting device TWI354389B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006046234 2006-09-29
DE102006055884.7A DE102006055884B4 (de) 2006-09-29 2006-11-27 Strahlungsemittierende Vorrichtung und Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
TW200816539A TW200816539A (en) 2008-04-01
TWI354389B true TWI354389B (en) 2011-12-11

Family

ID=38962611

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134771A TWI354389B (en) 2006-09-29 2007-09-19 Radiation emitting device

Country Status (8)

Country Link
US (2) US8159129B2 (OSRAM)
EP (1) EP2067190A2 (OSRAM)
JP (1) JP5424882B2 (OSRAM)
KR (1) KR101424305B1 (OSRAM)
CN (1) CN101553941B (OSRAM)
DE (1) DE102006055884B4 (OSRAM)
TW (1) TWI354389B (OSRAM)
WO (1) WO2008040288A2 (OSRAM)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
WO2009106063A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Monolithischer, optoelektronischer halbleiterkörper und verfahren zur herstellung eines solchen
DE102008054218A1 (de) * 2008-10-31 2010-05-06 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
EP2244316A1 (en) * 2009-04-22 2010-10-27 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO An electronic device and a method of manufacturing the same
DE102010003121A1 (de) * 2010-03-22 2011-09-22 Osram Opto Semiconductors Gmbh Organische Lichtemittierende Vorrichtung mit homogener Leuchtdichteverteilung
DE102014102255B4 (de) * 2014-02-21 2021-10-28 Pictiva Displays International Limited Organisches lichtemittierendes Bauelement und Verfahren zum Herstellen eines organischen lichtemittierenden Bauelements
DE102014110969A1 (de) 2014-08-01 2016-02-04 Osram Oled Gmbh Organisches Bauteil sowie Verfahren zur Herstellung eines organischen Bauteils

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS612296A (ja) * 1984-06-15 1986-01-08 アルプス電気株式会社 透明電極
US5309001A (en) 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JP2828187B2 (ja) * 1993-04-08 1998-11-25 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JPH07111339A (ja) * 1993-10-12 1995-04-25 Sumitomo Electric Ind Ltd 面発光型半導体発光装置
JPH1140362A (ja) * 1997-07-15 1999-02-12 Casio Comput Co Ltd 電界発光素子及びその製造方法
GB9718393D0 (en) * 1997-08-29 1997-11-05 Cambridge Display Tech Ltd Electroluminescent Device
JP2000231985A (ja) 1999-02-12 2000-08-22 Denso Corp 有機ｅｌ素子
TW425726B (en) 1999-10-08 2001-03-11 Epistar Corp A high-luminance light emitting diode with distributed contact layer
US6512248B1 (en) 1999-10-19 2003-01-28 Showa Denko K.K. Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp
US6656611B2 (en) * 2001-07-20 2003-12-02 Osram Opto Semiconductors Gmbh Structure-defining material for OLEDs
DE10147887C2 (de) 2001-09-28 2003-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement mit einem Kontakt, der eine Mehrzahl von voneinander beabstandeten Kontaktstellen umfaßt
JP2003308968A (ja) * 2002-04-12 2003-10-31 Rohm Co Ltd エレクトロルミネッセンス発光素子及びその製法
GB0218202D0 (en) * 2002-08-06 2002-09-11 Avecia Ltd Organic light emitting diodes
JP4114551B2 (ja) * 2003-06-06 2008-07-09 株式会社豊田自動織機 補助電極を用いた面状発光装置
WO2005034586A1 (ja) * 2003-10-02 2005-04-14 Kabushiki Kaisha Toyota Jidoshokki 電界発光素子
KR20060064987A (ko) 2004-12-09 2006-06-14 한국전자통신연구원 전도성 잉크와 이를 이용한 유기 반도체 트랜지스터 및 그제작 방법
JP4561490B2 (ja) * 2004-12-24 2010-10-13 株式会社豊田自動織機 エレクトロルミネッセンス素子
US20070075636A1 (en) * 2005-09-30 2007-04-05 Fuji Photo Film Co., Ltd. Organic electroluminescent element
US7498735B2 (en) * 2005-10-18 2009-03-03 Eastman Kodak Company OLED device having improved power distribution
DE102006013408A1 (de) 2006-03-17 2007-09-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leuchtdiodenelement
US7928537B2 (en) * 2006-03-31 2011-04-19 Fujifilm Corporation Organic electroluminescent device
TWI331483B (en) * 2006-08-07 2010-10-01 Ritdisplay Corp Organic light emitting device with heat dissipation structure

Also Published As

Publication number Publication date
DE102006055884A1 (de) 2008-04-03
JP5424882B2 (ja) 2014-02-26
JP2010505248A (ja) 2010-02-18
US8159129B2 (en) 2012-04-17
US20100007269A1 (en) 2010-01-14
EP2067190A2 (de) 2009-06-10
CN101553941A (zh) 2009-10-07
KR20090057460A (ko) 2009-06-05
US20120176027A1 (en) 2012-07-12
US8749134B2 (en) 2014-06-10
DE102006055884B4 (de) 2023-03-16
KR101424305B1 (ko) 2014-08-01
TW200816539A (en) 2008-04-01
WO2008040288A2 (de) 2008-04-10
CN101553941B (zh) 2012-06-20
WO2008040288A3 (de) 2008-07-24

Similar Documents

Publication Publication Date Title
CN102176502B (zh) 光电子半导体本体及其制造方法
US9024305B2 (en) Organic light emitting diode display and method for manufacturing the same
CN101965654B (zh) 有机发光二极管、接触装置和制造有机发光二极管的方法
KR101237538B1 (ko) 발광 디바이스
TW201220537A (en) Semiconductor light emitting device and manufacturing method thereof
US8749134B2 (en) Light emitting device with a layer sequence having electrode surfaces and partial regions
JP5538416B2 (ja) 光放出素子及び該素子の製造方法
CN110400828A (zh) 显示装置和制造显示装置的方法
US8283858B2 (en) Illumination device and method for manufacturing same
CN107516703A (zh) 发光二极管芯片
TW201216517A (en) Light-emitting diode device and manufacturing method thereof
CN110556457B (zh) 发光二极管以及具有该发光二极管的发光元件
TW201203610A (en) Light emitting device
US11239392B2 (en) Optoelectronic semiconductor chip, high-voltage semiconductor chip and method for producing an optoelectronic semiconductor chip
TW201320402A (zh) 固態發光半導體元件
KR20130044909A (ko) 발광소자 및 그 제조방법
KR20230058669A (ko) 광전자 반도체 컴포넌트 및 하나 이상의 광전자 반도체 컴포넌트를 제조하기 위한 방법
WO2016008743A1 (de) Optoelektronische baugruppe und verfahren zum herstellen einer optoelektronischen baugruppe
US12027645B2 (en) Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
KR101165259B1 (ko) ＭｇＯ피라미드 구조를 갖는 발광소자 및 그 제조방법
US20170005141A1 (en) Optoelectronic component and method for producing an optoelectronic component
TWI376827B (en) Radiation emitting device and method of manufacturing radiation emitting device
CN104992961A (zh) 有机电致发光晶体管阵列基板及其制作方法、显示装置
US11482653B2 (en) Light emitting diode apparatus
KR101767131B1 (ko) 발광다이오드칩, 이를 포함하는 면광원 및 발광다이오드칩의 제조방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees