CN104992961A - 有机电致发光晶体管阵列基板及其制作方法、显示装置 - Google Patents
有机电致发光晶体管阵列基板及其制作方法、显示装置 Download PDFInfo
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Abstract
本发明公开一种有机电致发光晶体管阵列基板及其制作方法、显示装置，涉及显示技术领域。有机电致发光晶体管阵列基板包括：基底，以及沿基底的厚度方向依次形成的栅极层、栅极绝缘层、半导体层、源极层、像素界定层、有机电致发光层和漏极层，栅极层形成在基底上；其中，源极层包括若干个与子像素单元对应的源极单元，像素界定层包括若干个与源极单元对应的像素界定单元；且各源极单元埋设在对应的像素界定单元内；有机电致发光层形成在各像素界定单元的表面，以及位于相邻源极单元之间的半导体层暴露部分的表面。
Description
技术领域
本发明涉及显示技术领域，尤其涉及一种有机电致发光晶体管阵列基板及其制作方法、显示装置。
背景技术
有机电致发光显示器是一种以有机电致发光材料作为发光体的电流型发光器件。按照驱动方式分类，有机电致发光显示器可以分为无源驱动式有机电致发光显示器和有源驱动式有机电致发光显示器；其中，有源驱动式有机电致发光显示器的驱动电压低，适用于高清晰和大尺寸显示，但其制作工艺复杂，生产成本高。为了解决有源驱动式有机电致发光显示器制作工艺复杂，生产成本高的问题，研究人员将有机薄膜晶体管和有机发光二极管结合到一个器件结构中，制成了有机电致发光晶体管阵列基板。
有机电致发光晶体管阵列基板的结构分为传统有机电致发光晶体管阵列基板和垂直结构有机电致发光晶体管阵列基板；其中，垂直结构有机电致发光晶体管阵列基板的源极层表面沉积有一层被称为像素界定层的绝缘材料，像素界定层将源极层隔成若干个与子像素单元对应的源极单元。每个源极单元与漏极层产生的载流子能够在有机电致发光材料中进行复合，从而使有机电致发光材料发光。而有机电致发光材料的发光亮度是通过栅极层调制载流子的传输进行调节的，但源极单元边缘的载流子经常不受栅极层控制，因此，亟需提出一种有机电致发光晶体管阵列基板，以解决垂直结构有机电致发光晶体管阵列基板中源极单元边缘的载流子不受栅极层控制的问题。
发明内容
本发明的目的在于提供一种有机电致发光晶体管阵列基板及其制作方法、显示装置以解决垂直结构有机电致发光晶体管阵列基板中源极单元边缘的载流子不受栅极层控制的问题。
为了实现上述目的，本发明提供如下技术方案：
一种有机电致发光晶体管阵列基板，包括基底，以及沿所述基底的厚度方向依次形成的栅极层、栅极绝缘层、半导体层、源极层、像素界定层、有机电致发光层和漏极层，所述栅极层形成在所述基底上；其中，
所述源极层包括若干个与子像素单元对应的源极单元，所述像素界定层包括若干个与所述源极单元对应的像素界定单元；且各所述源极单元埋设在对应的所述像素界定单元内；所述有机电致发光层形成在各所述像素界定单元的表面，以及位于相邻所述源极单元之间的所述半导体层暴露部分的表面。
本发明还提供了一种显示装置，包括上述有机电致发光晶体管阵列基板。
本发明还提供了一种上述有机电致发光晶体管阵列基板的制作方法，所述方法包括以下步骤：
步骤S1:在所述基底的表面形成栅极层；
步骤S2:在所述栅极层的表面沉积形成栅极绝缘层；
步骤S3:在所述栅极绝缘层的表面形成半导体层，然后在所述半导体层的表面形成源极层；接着对所述源极层构图，使所述源极层分成若干个与子像素单元对应的源极单元；在各所述源极单元的表面形成与所述源极单元对应的像素界定单元，使所述源极单元埋设在对应的所述像素界定单元内；
步骤S4:在各所述像素界定单元的表面，以及位于相邻所述源极单元之间的所述半导体层暴露部分的表面形成有机电致发光层；
步骤S5：在所述有机电致发光层的表面形成漏极层，得到有机电致发光晶体管阵列基板。
与现有技术相比，本发明的有益效果在于：
本发明提供的有机电致发光晶体管阵列基板，工作时，在栅极层和源极层之间加电压，在漏极层和源极层之间加电压，使有机电致发光晶体管阵列基板的源极层产生面电场，在面电场的作用下，使半导体层中的载流子扩散并与漏极层中的载流子在有机电致发光层中相遇并复合成激子，接着激子的能量会转移到有机电致发光层中的发光分子上，使发光分子中的电子被激发，从基态跃迁到激发态，而激发态的电子是不稳定的，会把多余的能量辐射出去以回到稳定的基态，多余的能量会以光的形式被辐射出去。另外，调节栅极层的电压值，将栅极层的电压值变大，半导体层中的载流子扩散的数量增加，半导体层中的载流子与漏极层中的载流子在有机电致发光层中相遇并复合成激子的数量随之增加，使辐射出光的亮度较强；相反当栅极层的电压值变小时，辐射出光的亮度较弱，从而实现栅极层对有机电致发光晶体管阵列基板发光亮度的调节。
而且，本发明提供的有机电致发光晶体管阵列基板中将各源极单元埋设在对应的像素界定单元内，使像素界定单元在界定了不同源极单元所在的子像素单元的区域的基础上，还避免了相邻源极单元所产生的面电场之间的相互影响，保证了各子像素单元所对应的电场均一，从而使得源极单元边缘的载流子能够被栅极层很好地控制。另外，像素界定单元使源极单元完全与有机电致发光层隔离，可以让载流子更好地扩散到有机电致发光层中。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本发明实施例提供的有机电致发光晶体管阵列基板的剖面图；
图2为本发明实施例提供的栅格状源极层的俯视图；
图3为本发明实施例提供的有机电致发光晶体管阵列基板的制作方法流程图。
附图标记：
1-基底， 2-栅极层，
21-透明导电薄膜， 22-栅线，
3-栅极绝缘层， 4-半导体层，
5-源极单元， 6-像素界定单元，
7-有机电致发光层， 8-漏极层，
9-栅格状图形， 10-彩膜基板的像素部分，
20-黑色矩阵。
具体实施方式
为了进一步说明本发明实施例提供的一种有机电致发光晶体管阵列基板、显示装置及制作方法，下面结合说明书附图进行详细描述。
请参阅图1，本发明实施例提供的一种有机电致发光晶体管阵列基板，包括基底1，以及沿基底1厚度方向依次形成的栅极层2、栅极绝缘层3、半导体层4、源极层、像素界定层、有机电致发光层7和漏极层8，且栅极层2形成在基底1的表面；其中，
源极层包括若干个与子像素单元对应的源极单元5，像素界定层包括若干个与源极单元5对应的像素界定单元6；且各源极单元5埋设在与源极单元5对应的像素界定单元6内；有机电致发光层7形成在各像素界定单元6的表面，以及位于相邻源极单元5之间的半导体层4暴露部分的表面。
具体工作时，本发明提供的有机电致发光晶体管阵列基板，在栅极层2和源极层之间加电压，在漏极层8和源极层之间加电压，使有机电致发光晶体管阵列基板的源极层产生面电场，在面电场的作用下，使半导体层4中的载流子扩散并与漏极层8中的载流子在有机电致发光层7中相遇并复合成激子，接着激子的能量会转移到有机电致发光层7中的发光分子上，使发光分子中的电子被激发，从基态跃迁到激发态，而激发态的电子是不稳定的，会把多余的能量辐射出去以回到稳定的基态，多余的能量会以光的形式被辐射出去。另外，调节栅极层2的电压值，将栅极层2的电压值变大，半导体层4中的载流子扩散的数量增加，半导体层4中的载流子与漏极层8中的载流子在有机电致发光层7中相遇并复合成激子的数量随之增加，使辐射出光的亮度较强；相反当栅极层2的电压值变小时，辐射出光的亮度较弱，从而实现栅极层2对有机电致发光晶体管阵列基板发光亮度的调节。
本发明提供的有机电致发光晶体管阵列基板，将各源极单元5埋设在对应的像素界定单元6内，使像素界定单元6在界定了不同源极单元5所在的子像素单元的区域的基础上，还避免了相邻源极单元5所产生的面电场之间的相互影响，保证了各子像素单元所对应的电场均一，从而使得源极单元5边缘的载流子能够被栅极层2很好地控制。另外，像素界定单元6使源极单元5完全与有机电致发光层7隔离，可以让载流子更好地扩散到有机电致发光层7中。
需要说明的是，半导体层4上形成的各源极单元5分别与子像素单元对应，因此，在半导体层4上相邻源极单元5之间存在半导体层4的暴露部分。
而且，为了进一步避免相邻的源极单元5所产生的面电场之间的相互影响，上述实施例中的半导体层4开设有若干过孔，各源极单元5设在半导体层4上且位于相邻的过孔之间，各过孔与各像素界定单元6一一对应连接。由于各过孔与各像素界定单元6是一一对应连接的，且具体的连接方式是像素界定单元6完全伸入过孔中或部分伸入过孔中，因此，源极单元5被完全埋设在对应的像素界定单元6的内部。采用上述结构的有机电致发光晶体管阵列基板，保证了相邻源极单元5对应形成的面电场之间不会产生干扰的现象。
请参阅图2，上述实施例提供的有机电致发光晶体管阵列基板中，各子像素单元对应的源极单元5可以为任意图形，为了使有机电致发光晶体管阵列基板实现更好的发光效果，将上述源极单元5优选为栅格状图形9，与普通平面图形相比，具有栅格状图形9的源极单元5的实际表面积大，当在栅极层2和源极层之间加大小相同的电压时，具有栅格状图形9的源极单元5对应产生的面电场的面积增加，因此，将源极单元5制作成栅格状图形9，能够使半导体层4中的载流子扩散的数量增加，而半导体层4中的载流子与漏极层8中的载流子在有机电致发光层7中相遇并复合成激子的数量也相应增加，从而产生更多的能量，使有机电致发光层7中发出的光更加均匀，实现更好的发光效果。
另外，为了增强载流子的传输能力，对上述实施例提供的有机电致发光晶体管阵列基板中的半导体层4的材料进行了限定，该半导体层4的材料优选为非晶硅、微晶硅、多晶硅、铟镓锌氧化物(IGZO)、铟锡锌氧化物(ITZO)、氮氧化锌(ZnON)中的一种或几种。由于这些材料为均一性较好的氧化物半导体材料，且这些材料本身含有较多的载流子，能够为有机电致发光晶体管阵列基板提供充足的载流子，从而提高了有机电致发光晶体管阵列基板的发光效率，并保证了子像素单元发光的均匀性。
上述实施例提供的有机电致发光晶体管阵列基板的栅极层2结构为常见结构，其具体结构包括：栅线22和透明导电薄膜21，栅线22形成在基底1的表面，透明导电薄膜21形成在位于相邻栅线22之间的基底1暴露部分的表面以及栅线22的表面。其中，栅线22在有机电致发光晶体管阵列基板中起到信号传输的作用；透明导电薄膜21在有机电致发光晶体管阵列基板中起到导电的作用。
使用时，通过对加在源极层和栅极层2之间的的电压值进行调节，能够实现栅极层2对载流子传输的控制，从而实现对有机电致发光晶体管阵列基板发光亮度的调节。
需要说明的是，在基底1的表面形成栅线22，栅线22与各源极单元5相对应，因此，在基底1上相邻栅线22之间存在基底1暴露部分。
本发明实施例还提供了一种显示装置，包括上述技术方案所提的有机电致发光晶体管阵列基板。
采用上述技术方案所提的有机电致发光晶体管阵列基板制成的显示装置，保证了各子像素单元所对应的电场均一，且能够消除各源极单元5边缘的载流子不受栅极层2控制的现象，使显示装置实现最佳的显示效果。
请参阅图1，本发明实施例还提供了上述有机电致发光晶体管阵列基板的制作方法，包括沿基底1厚度方向依次形成栅极层2、栅极绝缘层3、半导体层4、源极层、像素界定层、有机电致发光层7和漏极层8，栅极层2形成在基底1上；其中，源极层包括若干个与子像素单元对应的源极单元5，像素界定层包括若干个与源极单元5对应的像素界定单元6；将各源极单元5埋设在对应的像素界定单元6内；在各像素界定单元6的表面，以及位于相邻源极单元5之间的半导体层4暴露部分的表面形成有机电致发光层7。
请参阅图3，上述有机电致发光晶体管阵列基板的制作方法具体包括以下步骤：
步骤S1:在基底1的表面形成栅极层2；
步骤S2:在栅极层2的表面沉积形成栅极绝缘层3；
步骤S3:在栅极绝缘层3的表面形成半导体层4，然后在半导体层4的表面形成源极层；接着对源极层构图，使源极层分成若干个与子像素单元对应的源极单元5；
在各源极单元5的表面形成与源极单元5对应的像素界定单元6；使源极单元5埋设在对应的像素界定单元6内；
步骤S4:在各像素界定单元6的表面，以及位于相邻源极单元5之间的半导体层4暴露部分的表面形成有机电致发光层7；
步骤S5：在有机电致发光层7的表面形成漏极层8，得到有机电致发光晶体管阵列基板。
需要说明的是，上述有机电致发光晶体管阵列基板的制作方法中，可以通过掩埋法蒸镀有机发光材料或溶液打印方法形成有机电致发光层7，但还可以采用其他可实现的工艺，不仅限于所列。
采用上述方法制作的有机电致发光晶体管阵列基板，将各源极单元5埋设在与其对应的像素界定单6元内，可以避免相邻的源极单元5对应产生的面电场之间相互影响，保证每个子像素单元处的电场均一，从而消除源极单元5边缘的载流子不受栅极层2控制的现象。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于方法实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
上述步骤S3中，对半导体层4进行构图，形成与各像素界定单元6一一对应的过孔；各源极单元5形成在半导体层4上且位于相邻的过孔之间；在各源极单元5的表面形成与源极单元5对应的像素界定单元6时，使过孔与一一对应的像素界定单元6连接；对源极单元5进行构图，使源极单元5呈栅格状图形9。
具体的，上述步骤S1中栅极层2形成的过程为：在基底1的表面形成栅线22，在相邻栅线22之间的基底1暴露部分的表面和栅线22的表面沉积透明导电薄膜21，将透明导电薄膜21通过光刻图形化，使栅线22和透明导电薄膜21构成栅极层2，完成栅极层2的制作。
为了更为清楚的描述上述有机电致发光晶体管阵列基板的制作方法，以下给出较佳实施例：
步骤S1:采用导电性能良好的金属材料，在玻璃基底1的表面通过沉积、光刻形成栅线22，在栅线22的表面和相邻栅线22之间的基底1暴露部分的表面沉积透明导电薄膜21，通过光刻使栅线22和透明导电薄膜21一起构成栅极层2；其中，导电性能良好的金属材料为Cu或Al；透明导电薄膜21的材料为氧化铟锡(ITO)或氧化铟锌(IZO)。
步骤S2:在栅极层2的表面，通过等离子体增强化学气相沉积方法沉积层叠结构形成栅极绝缘层3；层叠结构为多层的SiOx层，或反复交叠的SiNx层与SiOx层。
步骤S3:在栅极绝缘层3表面沉积形成半导体层4，通过光刻在半导体层4上形成若干过孔，在半导体层4上沉积源极层，接着对源极层光刻，在相邻的过孔之间形成若干与子像素单元对应的栅格状的源极单元5，在各栅格状的源极单元5表面形成与子像素单元对应的像素界定单元6，同时保证源极单元5埋设在对应的像素界定单元6内，另外，各过孔与各像素界定单元6一一对应连接；其中，
半导体层4材料为非晶硅、微晶硅、多晶硅、铟镓锌氧化物(IGZO)、铟锡锌氧化物(ITZO)、氮氧化锌(ZnON)中的一种或几种，各像素界定单元6的材料为有机材料或无机材料，例如：塑胶材料或SiOx材料。
步骤S4:在各像素界定单元6表面，以及位于相邻源极单元5之间的半导体层4暴露部分的表面形成有机电致发光层7；通过掩埋法蒸镀有机发光材料或溶液打印方法形成有机电致发光层7。
步骤S5：在有机电致发光层7表面形成漏极层8，得到有机电致发光晶体管阵列基板；通过热蒸镀方法将Al、Mo、Mg、Ag或合金镀到有机电致发光层7上形成漏极层8。
需要特殊说明的是，请参阅图1，当有机电致发光晶体管阵列基板与彩膜基板一起使用时，有机电致发光晶体管阵列基板的源极单元5部分，对应彩膜基板的黑色矩阵20部分，相邻源极单元5之间的发光部分，对应彩膜基板的像素部分10，且此时漏极层8的材料应为透明材料，能够使发出的光透过漏极层8。当有机电致发光晶体管阵列基板不与彩膜基板一起使用时，漏极层8的材料对是否能够透光没有要求，此时从有机电致发光层7发出的光，可以通过有机电致发光晶体管阵列基板中栅极层2所在的一边透出。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。
Claims (10)
1.一种有机电致发光晶体管阵列基板，其特征在于，包括基底，以及沿所述基底的厚度方向依次形成的栅极层、栅极绝缘层、半导体层、源极层、像素界定层、有机电致发光层和漏极层，所述栅极层形成在所述基底上；其中，
所述源极层包括若干个与子像素单元对应的源极单元，所述像素界定层包括若干个与所述源极单元对应的像素界定单元；且各所述源极单元埋设在对应的所述像素界定单元内；所述有机电致发光层形成在各所述像素界定单元的表面，以及位于相邻所述源极单元之间的所述半导体层暴露部分的表面。
2.根据权利要求1所述的有机电致发光晶体管阵列基板，其特征在于，所述半导体层开设有若干过孔，各所述源极单元设在所述半导体层上且位于相邻的所述过孔之间，各所述像素界定单元一一对应伸入各所述过孔中与各所述过孔连接。
3.根据权利要求1或2所述的有机电致发光晶体管阵列基板，其特征在于，所述源极单元为栅格状图形。
4.根据权利要求1或2所述的有机电致发光晶体管阵列基板，其特征在于，所述半导体层的材料为非晶硅、微晶硅、多晶硅、铟镓锌氧化物、铟锡锌氧化物、氮氧化锌中的一种或几种。
5.根据权利要求1所述的有机电致发光晶体管阵列基板，其特征在于，所述栅极层包括：栅线和透明导电薄膜，所述栅线形成在所述基底的表面，所述透明导电薄膜形成在位于相邻所述栅线之间的所述基底暴露部分的表面以及所述栅线的表面。
6.一种显示装置，其特征在于，包括权利要求1-5中任一项所述的有机电致发光晶体管阵列基板。
7.一种如权利要求1所述有机电致发光晶体管阵列基板的制作方法，其特征在于，所述方法包括：
沿基底厚度方向依次形成栅极层、栅极绝缘层、半导体层、源极层、像素界定层、有机电致发光层和漏极层，所述栅极层形成在所述基底上；其中，
所述源极层包括若干个与子像素单元对应的源极单元，所述像素界定层包括若干个与所述源极单元对应的像素界定单元；将各所述源极单元埋设在对应的所述像素界定单元内；在各所述像素界定单元的表面，以及位于相邻所述源极单元之间的所述半导体层暴露部分的表面形成有机电致发光层。
8.根据权利要求7所述有机电致发光晶体管阵列基板的制作方法，其特征在于，所述方法包括以下步骤：
步骤S1:在所述基底的表面形成栅极层；
步骤S2:在所述栅极层的表面沉积形成栅极绝缘层；
步骤S3:在所述栅极绝缘层的表面形成半导体层，然后在所述半导体层的表面形成源极层；接着对所述源极层构图，使所述源极层分成若干个与子像素单元对应的源极单元；在各所述源极单元的表面形成与所述源极单元对应的像素界定单元，使所述源极单元埋设在对应的所述像素界定单元内；
步骤S4:在各所述像素界定单元的表面，以及位于相邻所述源极单元之间的所述半导体层暴露部分的表面形成有机电致发光层；
步骤S5：在所述有机电致发光层的表面形成漏极层，得到有机电致发光晶体管阵列基板。
9.根据权利要求8所述的有机电致发光晶体管阵列基板的制作方法，其特征在于，所述步骤S3中，对所述半导体层进行构图，形成与各所述像素界定单元一一对应的过孔；各所述源极单元形成在所述半导体层上且位于相邻的所述过孔之间；在各所述源极单元的表面形成与所述源极单元对应的像素界定单元时，使所述过孔与一一对应的像素界定单元连接；对所述源极单元进行构图，使所述源极单元呈栅格状图形。
10.根据权利要求8所述的有机电致发光晶体管阵列基板的制作方法，其特征在于，所述步骤S1中，所述栅极层形成的过程为：在所述基底的表面形成栅线，在相邻所述栅线之间的所述基底暴露部分的表面和所述栅线的表面沉积透明导电薄膜，将所述透明导电薄膜通过光刻图形化，使所述栅线和所述透明导电薄膜构成栅极层，完成所述栅极层的制作。
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| US15/171,269 US9935162B2 (en) | 2015-07-21 | 2016-06-02 | Organic electroluminescent transistor array substrate and fabrication method thereof, and display device |
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| CN113571666A (zh) * | 2021-07-22 | 2021-10-29 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
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| CN101055887A (zh) * | 2006-04-12 | 2007-10-17 | 株式会社日立显示器 | 有机el显示装置 |
| US20140203249A1 (en) * | 2013-01-23 | 2014-07-24 | Snu R&Db Foundation | Quasi-Surface Emission Vertical-Type Organic Light-Emitting Transistors And Method Of Manufacturing The Same |
| WO2014208896A1 (en) * | 2013-06-27 | 2014-12-31 | Samsung Electronics Co., Ltd. | Vertical organic light-emitting transistor and organic led illumination apparatus having the same |
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| JP5310214B2 (ja) * | 2009-04-13 | 2013-10-09 | ソニー株式会社 | 表示装置および電子機器 |
| CN104867958B (zh) * | 2015-04-01 | 2017-12-08 | 京东方科技集团股份有限公司 | 有机电致发光显示基板及其制作方法和显示装置 |
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| CN101055887A (zh) * | 2006-04-12 | 2007-10-17 | 株式会社日立显示器 | 有机el显示装置 |
| US20140203249A1 (en) * | 2013-01-23 | 2014-07-24 | Snu R&Db Foundation | Quasi-Surface Emission Vertical-Type Organic Light-Emitting Transistors And Method Of Manufacturing The Same |
| WO2014208896A1 (en) * | 2013-06-27 | 2014-12-31 | Samsung Electronics Co., Ltd. | Vertical organic light-emitting transistor and organic led illumination apparatus having the same |
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| CN113571666A (zh) * | 2021-07-22 | 2021-10-29 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
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| US9935162B2 (en) | 2018-04-03 |
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