TWI350274B - - Google Patents

Info

Publication number
TWI350274B
TWI350274B TW093116725A TW93116725A TWI350274B TW I350274 B TWI350274 B TW I350274B TW 093116725 A TW093116725 A TW 093116725A TW 93116725 A TW93116725 A TW 93116725A TW I350274 B TWI350274 B TW I350274B
Authority
TW
Taiwan
Prior art keywords
dispersion
nickel
copper
fine particles
palladium hydride
Prior art date
Application number
TW093116725A
Other languages
English (en)
Chinese (zh)
Other versions
TW200503955A (en
Inventor
Hideyuki Hirakoso
Keisuke Abe
Yasuhiro Sanada
Kentaro Tsunozaki
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of TW200503955A publication Critical patent/TW200503955A/zh
Application granted granted Critical
Publication of TWI350274B publication Critical patent/TWI350274B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/08—Coating starting from inorganic powder by application of heat or pressure and heat
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/02—Hydrides of transition elements; Addition complexes thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Conductive Materials (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
TW093116725A 2003-06-10 2004-06-10 Metal hydride fine particle, method for producing same, liquid dispersion containing metal hydride fine particle, and metallic material TW200503955A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003164666 2003-06-10

Publications (2)

Publication Number Publication Date
TW200503955A TW200503955A (en) 2005-02-01
TWI350274B true TWI350274B (enExample) 2011-10-11

Family

ID=33549191

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093116725A TW200503955A (en) 2003-06-10 2004-06-10 Metal hydride fine particle, method for producing same, liquid dispersion containing metal hydride fine particle, and metallic material

Country Status (8)

Country Link
US (1) US7550513B2 (enExample)
EP (1) EP1640338B1 (enExample)
JP (1) JP4747839B2 (enExample)
KR (1) KR101093465B1 (enExample)
CN (1) CN100344528C (enExample)
AT (1) ATE531669T1 (enExample)
TW (1) TW200503955A (enExample)
WO (1) WO2004110925A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE531669T1 (de) 2003-06-10 2011-11-15 Asahi Glass Co Ltd Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material
JP2005081501A (ja) * 2003-09-09 2005-03-31 Ulvac Japan Ltd 金属ナノ粒子及びその製造方法、金属ナノ粒子分散液及びその製造方法、並びに金属細線及び金属膜及びその形成方法
ATE492888T1 (de) * 2004-03-10 2011-01-15 Asahi Glass Co Ltd Metallhaltiger feinpartikel, flüssigdispersion eines metallhaltigen feinpartikels und leitfähiges metallhaltiges material
WO2006109410A1 (ja) * 2005-04-12 2006-10-19 Asahi Glass Company, Limited インク組成物及び金属質材料
TWI392594B (zh) * 2006-04-20 2013-04-11 Microjet Technology Co Ltd 微小顆粒製造系統及製程
CN101495580A (zh) * 2006-07-28 2009-07-29 旭硝子株式会社 含金属微粒的分散液、其制造方法及具有金属膜的物品
KR101375047B1 (ko) * 2006-12-29 2014-03-26 엘지디스플레이 주식회사 표시장치 제조방법
JP5593699B2 (ja) * 2008-02-07 2014-09-24 旭硝子株式会社 水素化銅ナノ粒子、その製造方法、金属ペーストおよび物品
US7901491B2 (en) * 2008-03-31 2011-03-08 General Electric Company Hydrogen storage material and related system
JP5387034B2 (ja) * 2009-02-20 2014-01-15 大日本印刷株式会社 導電性基板
JP5425231B2 (ja) * 2010-01-28 2014-02-26 独立行政法人科学技術振興機構 パターン状導電性膜の形成方法
RU2013106521A (ru) 2010-07-15 2014-08-20 Асахи Гласс Компани, Лимитед Способ получения метаматериала и метаматериал
KR101495698B1 (ko) * 2011-03-31 2015-02-25 디아이씨 가부시끼가이샤 유기 화합물과 은 코어 / 구리 쉘 나노 입자와의 복합체 및 그 제조 방법
JPWO2013021567A1 (ja) 2011-08-11 2015-03-05 三洋電機株式会社 金属の接合方法および金属接合構造
JP5088760B1 (ja) * 2011-11-14 2012-12-05 石原薬品株式会社 銅微粒子分散液、導電膜形成方法及び回路基板
JP2015110682A (ja) * 2012-03-21 2015-06-18 旭硝子株式会社 導電インク、導体付き基材、および導体付き基材の製造方法
JP2015110683A (ja) * 2012-03-22 2015-06-18 旭硝子株式会社 導電インク、導体付き基材及び導体付き基材の製造方法
US9234112B2 (en) * 2013-06-05 2016-01-12 Korea Institute Of Machinery & Materials Metal precursor powder, method of manufacturing conductive metal layer or pattern, and device including the same
JP6137049B2 (ja) * 2014-05-13 2017-05-31 株式会社村田製作所 セラミック電子部品の製造方法
CN114162784B (zh) * 2021-11-03 2023-02-17 五邑大学 一种钯氢化合物的绿色制备方法及其应用

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3844854A (en) * 1967-09-20 1974-10-29 Dow Chemical Co Stabilization of light metal hydride
JPS462162B1 (enExample) * 1968-12-17 1971-01-20
US3963831A (en) * 1972-06-15 1976-06-15 Dynamit Nobel Aktiengesellschaft Process for the manufacture of alkali metal hydrides in coarse powder form
US4666735A (en) * 1983-04-15 1987-05-19 Polyonics Corporation Process for producing product having patterned metal layer
JPS60160192A (ja) * 1983-10-12 1985-08-21 日立粉末冶金株式会社 混成集積回路基板の製造方法
JPH02294417A (ja) * 1989-05-10 1990-12-05 Seidou Kagaku Kogyo Kk 超微粒子銅粉末の製造方法
US6528441B1 (en) * 1992-10-28 2003-03-04 Westinghouse Savannah River Company, L.L.C. Hydrogen storage composition and method
MY125159A (en) * 1998-09-14 2006-07-31 Mitsubishi Materials Corp Fine metal particle-dispersion solution and conductive film using the same
US6589312B1 (en) * 1999-09-01 2003-07-08 David G. Snow Nanoparticles for hydrogen storage, transportation, and distribution
US20030170314A1 (en) * 2000-07-27 2003-09-11 Burrell Robert E. Compositions of metal-containing compounds
JP3942816B2 (ja) 2000-10-25 2007-07-11 ハリマ化成株式会社 金属間のロウ付け接合方法
JP3774638B2 (ja) 2001-04-24 2006-05-17 ハリマ化成株式会社 インクジェット印刷法を利用する回路パターンの形成方法
JP3764349B2 (ja) 2001-05-07 2006-04-05 ハリマ化成株式会社 金属微粒子分散液を用いたメッキ代替導電性金属皮膜の形成方法
JP3817201B2 (ja) * 2002-04-19 2006-09-06 Ｊｓｒ株式会社 導電性膜形成用組成物、導電性膜およびその形成法
ATE531669T1 (de) 2003-06-10 2011-11-15 Asahi Glass Co Ltd Herstellungsverfahren für feines metallhydridteilchen, feines metallhydridteilchen enthaltende flüssige dispersion und metallisches material

Also Published As

Publication number Publication date
ATE531669T1 (de) 2011-11-15
KR20060037260A (ko) 2006-05-03
US7550513B2 (en) 2009-06-23
WO2004110925A1 (ja) 2004-12-23
US20060070493A1 (en) 2006-04-06
EP1640338A1 (en) 2006-03-29
TW200503955A (en) 2005-02-01
CN100344528C (zh) 2007-10-24
JP4747839B2 (ja) 2011-08-17
CN1805901A (zh) 2006-07-19
JPWO2004110925A1 (ja) 2006-07-20
EP1640338B1 (en) 2011-11-02
KR101093465B1 (ko) 2011-12-13
EP1640338A4 (en) 2008-06-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees