TWI349835B - Resist composition and patterning process using the same - Google Patents

Resist composition and patterning process using the same

Info

Publication number
TWI349835B
TWI349835B TW096105291A TW96105291A TWI349835B TW I349835 B TWI349835 B TW I349835B TW 096105291 A TW096105291 A TW 096105291A TW 96105291 A TW96105291 A TW 96105291A TW I349835 B TWI349835 B TW I349835B
Authority
TW
Taiwan
Prior art keywords
same
resist composition
patterning process
patterning
resist
Prior art date
Application number
TW096105291A
Other languages
English (en)
Other versions
TW200804986A (en
Inventor
Mutsuo Nakashima
Yoshitaka Hamada
Katsuya Takemura
Kazumi Noda
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of TW200804986A publication Critical patent/TW200804986A/zh
Application granted granted Critical
Publication of TWI349835B publication Critical patent/TWI349835B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)
TW096105291A 2006-02-13 2007-02-13 Resist composition and patterning process using the same TWI349835B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006035132A JP4600679B2 (ja) 2006-02-13 2006-02-13 レジスト組成物並びにこれを用いたパターン形成方法

Publications (2)

Publication Number Publication Date
TW200804986A TW200804986A (en) 2008-01-16
TWI349835B true TWI349835B (en) 2011-10-01

Family

ID=38368976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105291A TWI349835B (en) 2006-02-13 2007-02-13 Resist composition and patterning process using the same

Country Status (4)

Country Link
US (1) US20070190458A1 (zh)
JP (1) JP4600679B2 (zh)
KR (1) KR101233920B1 (zh)
TW (1) TWI349835B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4687898B2 (ja) * 2006-03-14 2011-05-25 信越化学工業株式会社 含フッ素ケイ素化合物、シリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
JP5177432B2 (ja) * 2008-02-21 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5177434B2 (ja) 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
JP5282920B2 (ja) * 2009-04-24 2013-09-04 日産化学工業株式会社 パターン反転膜形成用組成物及び反転パターン形成方法
KR102557109B1 (ko) * 2017-03-29 2023-07-20 도레이 카부시키가이샤 네가티브형 감광성 수지 조성물, 경화막, 경화막을 구비하는 소자 및 유기 el 디스플레이, 그리고 그의 제조 방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW432257B (en) * 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
TW550439B (en) * 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
TW546542B (en) * 1997-08-06 2003-08-11 Shinetsu Chemical Co High molecular weight silicone compounds, resist compositions, and patterning method
SG78412A1 (en) * 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
JP4019247B2 (ja) * 2000-06-02 2007-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2002055346A (ja) * 2000-08-11 2002-02-20 Sony Corp 液晶配向膜の形成方法および液晶表示装置の製造方法
JP3931950B2 (ja) * 2001-03-13 2007-06-20 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4061454B2 (ja) * 2001-03-13 2008-03-19 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2003020335A (ja) * 2001-05-01 2003-01-24 Jsr Corp ポリシロキサンおよび感放射線性樹脂組成物
JP4016765B2 (ja) * 2001-08-24 2007-12-05 Ｊｓｒ株式会社 パターン形成方法およびパターン形成用多層膜
US6998722B2 (en) * 2002-07-08 2006-02-14 Viciciv Technology Semiconductor latches and SRAM devices
JP4370898B2 (ja) * 2002-12-17 2009-11-25 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4488215B2 (ja) * 2004-08-19 2010-06-23 信越化学工業株式会社 レジスト組成物並びにこれを用いたパターン形成方法
JP2006106311A (ja) * 2004-10-05 2006-04-20 Shin Etsu Chem Co Ltd ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法

Also Published As

Publication number Publication date
JP2007212941A (ja) 2007-08-23
TW200804986A (en) 2008-01-16
KR101233920B1 (ko) 2013-02-15
KR20070081763A (ko) 2007-08-17
US20070190458A1 (en) 2007-08-16
JP4600679B2 (ja) 2010-12-15

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees