TWI369587B - Micropattern-forming resin composition and method for forming micropattern using the same - Google Patents

Micropattern-forming resin composition and method for forming micropattern using the same

Info

Publication number
TWI369587B
TWI369587B TW096124269A TW96124269A TWI369587B TW I369587 B TWI369587 B TW I369587B TW 096124269 A TW096124269 A TW 096124269A TW 96124269 A TW96124269 A TW 96124269A TW I369587 B TWI369587 B TW I369587B
Authority
TW
Taiwan
Prior art keywords
micropattern
forming
resin composition
same
forming resin
Prior art date
Application number
TW096124269A
Other languages
Chinese (zh)
Other versions
TW200813639A (en
Inventor
Yong Sik Yoo
Dong Seon Uh
Hee Jae Kim
Chang Soo Woo
Sang Geun Yun
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200813639A publication Critical patent/TW200813639A/en
Application granted granted Critical
Publication of TWI369587B publication Critical patent/TWI369587B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C09D139/08—Homopolymers or copolymers of vinyl-pyridine
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/062—Copolymers with monomers not covered by C08L33/06
    • C08L33/066—Copolymers with monomers not covered by C08L33/06 containing -OH groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/08—Homopolymers or copolymers of vinyl-pyridine
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/062—Copolymers with monomers not covered by C09D133/06
    • C09D133/066—Copolymers with monomers not covered by C09D133/06 containing -OH groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
TW096124269A 2006-07-07 2007-07-04 Micropattern-forming resin composition and method for forming micropattern using the same TWI369587B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060064084A KR100737851B1 (en) 2006-07-07 2006-07-07 Micropattern forming resin composition and method for forming micropattern using thereof

Publications (2)

Publication Number Publication Date
TW200813639A TW200813639A (en) 2008-03-16
TWI369587B true TWI369587B (en) 2012-08-01

Family

ID=38503900

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096124269A TWI369587B (en) 2006-07-07 2007-07-04 Micropattern-forming resin composition and method for forming micropattern using the same

Country Status (3)

Country Link
KR (1) KR100737851B1 (en)
TW (1) TWI369587B (en)
WO (1) WO2008004735A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101672720B1 (en) * 2009-02-27 2016-11-07 주식회사 동진쎄미켐 Polymer for coating photoresist pattern and method for forming pattern for semiconductor device using the same
JP5664509B2 (en) * 2011-09-16 2015-02-04 信越化学工業株式会社 Pattern formation method
KR101658066B1 (en) * 2014-07-24 2016-09-20 금호석유화학 주식회사 Coating composition for forming fine patterns and mothod of forming fine patterns by using the same
US9448483B2 (en) * 2014-07-31 2016-09-20 Dow Global Technologies Llc Pattern shrink methods
TWI584061B (en) 2014-08-27 2017-05-21 羅門哈斯電子材料有限公司 Multiple-pattern forming methods
CN106486346B (en) * 2015-08-27 2019-04-26 中芯国际集成电路制造(上海)有限公司 The forming method of photoetching offset plate figure
CN112108348B (en) * 2020-09-23 2022-03-04 苏州太阳井新能源有限公司 Preparation method of graphical material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3633595B2 (en) * 2001-08-10 2005-03-30 富士通株式会社 Resist pattern swelling material, micropattern formation method using the same, and semiconductor device manufacturing method
JP3476082B2 (en) * 2001-11-05 2003-12-10 東京応化工業株式会社 Coating forming agent for pattern refinement and method for forming fine pattern using the same
JP2004078033A (en) 2002-08-21 2004-03-11 Tokyo Ohka Kogyo Co Ltd Coating forming material for making micropattern and method of forming micropattern using same
JP4428642B2 (en) 2004-04-30 2010-03-10 東京応化工業株式会社 COATING FORMING AGENT FOR PATTERN REFINEMENT AND METHOD FOR FORMING FINE PATTERN USING THE
KR100745901B1 (en) * 2005-05-19 2007-08-02 주식회사 하이닉스반도체 Composition for Coating Photoresist Pattern and Method for Forming Fine Pattern Using the Same

Also Published As

Publication number Publication date
WO2008004735A1 (en) 2008-01-10
TW200813639A (en) 2008-03-16
KR100737851B1 (en) 2007-07-12

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