TWI347008B - Power metal oxide silicon field effect transistor - Google Patents

Power metal oxide silicon field effect transistor

Info

Publication number
TWI347008B
TWI347008B TW096138370A TW96138370A TWI347008B TW I347008 B TWI347008 B TW I347008B TW 096138370 A TW096138370 A TW 096138370A TW 96138370 A TW96138370 A TW 96138370A TW I347008 B TWI347008 B TW I347008B
Authority
TW
Taiwan
Prior art keywords
metal oxide
field effect
effect transistor
oxide silicon
power metal
Prior art date
Application number
TW096138370A
Other languages
English (en)
Other versions
TW200820434A (en
Inventor
Kyong Tae Chu
Gyu Gwang Sim
Jong Min Kim
Original Assignee
Dongbu Hitek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Hitek Co Ltd filed Critical Dongbu Hitek Co Ltd
Publication of TW200820434A publication Critical patent/TW200820434A/zh
Application granted granted Critical
Publication of TWI347008B publication Critical patent/TWI347008B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
TW096138370A 2006-10-16 2007-10-12 Power metal oxide silicon field effect transistor TWI347008B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060100210A KR100769139B1 (ko) 2006-10-16 2006-10-16 파워 모스에프이티

Publications (2)

Publication Number Publication Date
TW200820434A TW200820434A (en) 2008-05-01
TWI347008B true TWI347008B (en) 2011-08-11

Family

ID=38815457

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096138370A TWI347008B (en) 2006-10-16 2007-10-12 Power metal oxide silicon field effect transistor

Country Status (6)

Country Link
US (1) US7944001B2 (zh)
JP (1) JP2008098643A (zh)
KR (1) KR100769139B1 (zh)
CN (1) CN100570874C (zh)
DE (1) DE102007049000A1 (zh)
TW (1) TWI347008B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109148555B (zh) * 2017-06-27 2021-08-31 深圳尚阳通科技有限公司 超结器件及其制造方法
CN113066866B (zh) * 2021-03-15 2022-07-26 无锡新洁能股份有限公司 碳化硅mosfet器件及其工艺方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398242B2 (ja) 1994-11-30 2003-04-21 日本インター株式会社 絶縁ゲート型バイポーラトランジスタ
JPH09121051A (ja) * 1995-08-21 1997-05-06 Fuji Electric Co Ltd 電力用半導体素子
JPH09260648A (ja) * 1996-03-19 1997-10-03 Toshiba Corp 半導体装置及びその製造方法
JP3329707B2 (ja) 1997-09-30 2002-09-30 株式会社東芝 半導体装置
KR100306744B1 (ko) * 1998-11-17 2001-12-17 오길록 트렌치게이트전력소자의제조방법
JP3679954B2 (ja) 1999-09-24 2005-08-03 株式会社東芝 半導体装置
JP2001352063A (ja) 2000-06-09 2001-12-21 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP3524850B2 (ja) 2000-08-03 2004-05-10 三洋電機株式会社 絶縁ゲート型電界効果半導体装置
JP2004022700A (ja) * 2002-06-14 2004-01-22 Sanyo Electric Co Ltd 半導体装置
JP2005209731A (ja) 2004-01-20 2005-08-04 Seiko Instruments Inc トレンチゲート型ｍｏｓトランジスタとその作成法
JP2007059636A (ja) * 2005-08-25 2007-03-08 Renesas Technology Corp Ｄｍｏｓｆｅｔおよびプレーナ型ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
US7944001B2 (en) 2011-05-17
KR100769139B1 (ko) 2007-10-22
CN100570874C (zh) 2009-12-16
US20080087953A1 (en) 2008-04-17
DE102007049000A1 (de) 2008-05-21
JP2008098643A (ja) 2008-04-24
TW200820434A (en) 2008-05-01
CN101165899A (zh) 2008-04-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees