TWI346376B - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- TWI346376B TWI346376B TW095116082A TW95116082A TWI346376B TW I346376 B TWI346376 B TW I346376B TW 095116082 A TW095116082 A TW 095116082A TW 95116082 A TW95116082 A TW 95116082A TW I346376 B TWI346376 B TW I346376B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005137541A JP2006318985A (ja) | 2005-05-10 | 2005-05-10 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200707659A TW200707659A (en) | 2007-02-16 |
TWI346376B true TWI346376B (en) | 2011-08-01 |
Family
ID=37419689
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095116082A TWI346376B (en) | 2005-05-10 | 2006-05-05 | Semiconductor memory |
Country Status (4)
Country | Link |
---|---|
US (1) | US7550807B2 (zh) |
JP (1) | JP2006318985A (zh) |
KR (1) | KR100805874B1 (zh) |
TW (1) | TWI346376B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158590A (ja) | 2007-12-25 | 2009-07-16 | Toshiba Corp | 半導体装置及びその製造方法 |
CN108376683B (zh) * | 2018-02-27 | 2020-11-20 | 武汉新芯集成电路制造有限公司 | 源极的制作方法及半导体器件 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2893894B2 (ja) | 1990-08-15 | 1999-05-24 | 日本電気株式会社 | 不揮発性メモリ及びその製造方法 |
JP3474614B2 (ja) | 1993-12-14 | 2003-12-08 | マクロニクス インターナショナル カンパニイ リミテッド | 不揮発性半導体メモリ装置及びその動作方法 |
JP3246447B2 (ja) * | 1998-07-21 | 2002-01-15 | 日本電気株式会社 | 不揮発性半導体メモリ装置の製造方法 |
JP2002190534A (ja) * | 2000-12-20 | 2002-07-05 | Nec Corp | 半導体記憶装置およびその製造方法 |
JP2003037193A (ja) * | 2001-07-25 | 2003-02-07 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2003133444A (ja) * | 2001-08-10 | 2003-05-09 | Mitsubishi Electric Corp | 半導体記憶装置およびその製造方法 |
JP3637332B2 (ja) | 2002-05-29 | 2005-04-13 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2004235399A (ja) * | 2003-01-30 | 2004-08-19 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
JP4947931B2 (ja) * | 2004-08-12 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2005
- 2005-05-10 JP JP2005137541A patent/JP2006318985A/ja active Pending
-
2006
- 2006-05-05 US US11/418,112 patent/US7550807B2/en not_active Expired - Fee Related
- 2006-05-05 TW TW095116082A patent/TWI346376B/zh not_active IP Right Cessation
- 2006-05-09 KR KR1020060041711A patent/KR100805874B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW200707659A (en) | 2007-02-16 |
KR100805874B1 (ko) | 2008-02-20 |
KR20060116725A (ko) | 2006-11-15 |
US20060258108A1 (en) | 2006-11-16 |
JP2006318985A (ja) | 2006-11-24 |
US7550807B2 (en) | 2009-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |