TWI346357B - Apparatus and method for treating substrate, and injection head used in the apparatus - Google Patents
Apparatus and method for treating substrate, and injection head used in the apparatusInfo
- Publication number
- TWI346357B TWI346357B TW096118845A TW96118845A TWI346357B TW I346357 B TWI346357 B TW I346357B TW 096118845 A TW096118845 A TW 096118845A TW 96118845 A TW96118845 A TW 96118845A TW I346357 B TWI346357 B TW I346357B
- Authority
- TW
- Taiwan
- Prior art keywords
- injection head
- head used
- treating substrate
- treating
- substrate
- Prior art date
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060047217A KR100706666B1 (ko) | 2006-05-25 | 2006-05-25 | 기판을 처리하는 장치 및 방법, 그리고 이에 사용되는분사헤드 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200744128A TW200744128A (en) | 2007-12-01 |
TWI346357B true TWI346357B (en) | 2011-08-01 |
Family
ID=38161648
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096118845A TWI346357B (en) | 2006-05-25 | 2007-05-25 | Apparatus and method for treating substrate, and injection head used in the apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US8747611B2 (zh) |
JP (1) | JP4474438B2 (zh) |
KR (1) | KR100706666B1 (zh) |
CN (1) | CN100530534C (zh) |
TW (1) | TWI346357B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4912916B2 (ja) * | 2006-10-10 | 2012-04-11 | 大日本スクリーン製造株式会社 | 基板処理装置 |
KR100790726B1 (ko) | 2006-12-21 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 반도체 노광장비 |
JP5671261B2 (ja) * | 2010-06-04 | 2015-02-18 | 東京応化工業株式会社 | 被処理体の処理方法 |
JP5743853B2 (ja) * | 2010-12-28 | 2015-07-01 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5762925B2 (ja) * | 2010-12-28 | 2015-08-12 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5646354B2 (ja) * | 2011-01-25 | 2014-12-24 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5474840B2 (ja) * | 2011-01-25 | 2014-04-16 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5642574B2 (ja) * | 2011-01-25 | 2014-12-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
JP5467583B2 (ja) * | 2011-02-17 | 2014-04-09 | 東京エレクトロン株式会社 | 基板洗浄装置 |
CN103177934B (zh) * | 2011-12-26 | 2016-06-15 | 北京七星华创电子股份有限公司 | 薄片盘状物清洗甩干器 |
CN102779772A (zh) * | 2012-07-16 | 2012-11-14 | 北京七星华创电子股份有限公司 | 晶片背面清洗装置 |
US9460944B2 (en) * | 2014-07-02 | 2016-10-04 | SCREEN Holdings Co., Ltd. | Substrate treating apparatus and method of treating substrate |
KR102283587B1 (ko) * | 2014-08-01 | 2021-08-02 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP2016111302A (ja) * | 2014-12-10 | 2016-06-20 | 株式会社Screenホールディングス | 基板処理装置 |
CN105762098B (zh) * | 2014-12-17 | 2020-03-31 | 北京北方华创微电子装备有限公司 | 传片系统及半导体加工设备 |
KR101880232B1 (ko) * | 2015-07-13 | 2018-07-19 | 주식회사 제우스 | 기판 액처리 장치 및 방법 |
CN105470177B (zh) * | 2016-01-05 | 2018-09-07 | 清华大学 | 晶圆清洗干燥装置 |
KR102030470B1 (ko) * | 2016-07-01 | 2019-10-11 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP6804325B2 (ja) * | 2017-02-09 | 2020-12-23 | 東京エレクトロン株式会社 | 液処理装置 |
KR102176209B1 (ko) * | 2018-12-13 | 2020-11-09 | 주식회사 제우스 | 이물질 제거용 기판처리장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953276A (en) * | 1972-10-26 | 1976-04-27 | Zenith Radio Corporation | Etching apparatus with plural nozzle arrangements |
KR0122507Y1 (ko) * | 1996-06-14 | 1998-08-17 | 배순훈 | 식기세척기의 세척수분사장치 |
JPH1064831A (ja) | 1996-08-20 | 1998-03-06 | Fujitsu Ltd | 気相成長装置 |
JP3563605B2 (ja) | 1998-03-16 | 2004-09-08 | 東京エレクトロン株式会社 | 処理装置 |
DE19832982C2 (de) * | 1998-07-22 | 2000-08-03 | Premark Feg Llc | Spülvorrichtung für eine Geschirrspülmaschine |
KR20010055816A (ko) * | 1999-12-13 | 2001-07-04 | 박종섭 | 화학증착 헤드의 가스 균일분사장치 |
KR100427996B1 (ko) * | 2001-07-19 | 2004-04-28 | 주식회사 아이피에스 | 박막증착용 반응용기 및 그를 이용한 박막증착방법 |
KR100457053B1 (ko) * | 2002-07-30 | 2004-11-10 | 삼성전자주식회사 | 웨이퍼 세정 장치 |
KR20050026766A (ko) * | 2003-09-09 | 2005-03-16 | 삼성전자주식회사 | 반도체 제조설비에서의 세정장치 |
JP2006013107A (ja) * | 2004-06-25 | 2006-01-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
-
2006
- 2006-05-25 KR KR1020060047217A patent/KR100706666B1/ko not_active IP Right Cessation
-
2007
- 2007-05-21 CN CNB2007101075895A patent/CN100530534C/zh active Active
- 2007-05-22 JP JP2007134985A patent/JP4474438B2/ja active Active
- 2007-05-24 US US11/805,758 patent/US8747611B2/en active Active
- 2007-05-25 TW TW096118845A patent/TWI346357B/zh active
Also Published As
Publication number | Publication date |
---|---|
US20070275562A1 (en) | 2007-11-29 |
US8747611B2 (en) | 2014-06-10 |
TW200744128A (en) | 2007-12-01 |
JP2007318140A (ja) | 2007-12-06 |
CN100530534C (zh) | 2009-08-19 |
KR100706666B1 (ko) | 2007-04-13 |
CN101079373A (zh) | 2007-11-28 |
JP4474438B2 (ja) | 2010-06-02 |
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