TWI343840B - Apparatus for electroless deposition of metals onto semiconductor substrates - Google Patents
Apparatus for electroless deposition of metals onto semiconductor substrates Download PDFInfo
- Publication number
- TWI343840B TWI343840B TW095124386A TW95124386A TWI343840B TW I343840 B TWI343840 B TW I343840B TW 095124386 A TW095124386 A TW 095124386A TW 95124386 A TW95124386 A TW 95124386A TW I343840 B TWI343840 B TW I343840B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- fluid
- assembly
- process chamber
- electroless
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims description 588
- 230000008021 deposition Effects 0.000 title claims description 25
- 229910052751 metal Inorganic materials 0.000 title description 12
- 239000002184 metal Substances 0.000 title description 12
- 239000004065 semiconductor Substances 0.000 title description 7
- 150000002739 metals Chemical group 0.000 title description 2
- 239000012530 fluid Substances 0.000 claims description 541
- 238000000034 method Methods 0.000 claims description 387
- 230000008569 process Effects 0.000 claims description 359
- 238000012545 processing Methods 0.000 claims description 150
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- 238000005192 partition Methods 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- 238000005137 deposition process Methods 0.000 description 11
- 239000007921 spray Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
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- 229910000521 B alloy Inorganic materials 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
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- 229910002651 NO3 Inorganic materials 0.000 description 3
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- 239000004698 Polyethylene Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- MZJUGRUTVANEDW-UHFFFAOYSA-N bromine fluoride Chemical compound BrF MZJUGRUTVANEDW-UHFFFAOYSA-N 0.000 description 3
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- 239000010937 tungsten Substances 0.000 description 3
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- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 230000006870 function Effects 0.000 description 2
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- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000001976 improved effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
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- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920011301 perfluoro alkoxyl alkane Polymers 0.000 description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 2
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- 239000011574 phosphorus Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- 240000000560 Citrus x paradisi Species 0.000 description 1
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- 101100518501 Mus musculus Spp1 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- RCTFKLJQWUUSKS-UHFFFAOYSA-H P(=O)([O-])([O-])[O-].[W+4].[Co+2].P(=O)([O-])([O-])[O-] Chemical compound P(=O)([O-])([O-])[O-].[W+4].[Co+2].P(=O)([O-])([O-])[O-] RCTFKLJQWUUSKS-UHFFFAOYSA-H 0.000 description 1
- 241001629697 Panicum turgidum Species 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 239000004813 Perfluoroalkoxy alkane Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
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- NZZIXFBFZCQMFW-UHFFFAOYSA-N [B].[B].[W].[Co] Chemical compound [B].[B].[W].[Co] NZZIXFBFZCQMFW-UHFFFAOYSA-N 0.000 description 1
- CPJYFACXEHYLFS-UHFFFAOYSA-N [B].[W].[Co] Chemical compound [B].[W].[Co] CPJYFACXEHYLFS-UHFFFAOYSA-N 0.000 description 1
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- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- HZEIHKAVLOJHDG-UHFFFAOYSA-N boranylidynecobalt Chemical compound [Co]#B HZEIHKAVLOJHDG-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- IGLTYURFTAWDMX-UHFFFAOYSA-N boranylidynetungsten nickel Chemical compound [Ni].B#[W] IGLTYURFTAWDMX-UHFFFAOYSA-N 0.000 description 1
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- 238000002309 gasification Methods 0.000 description 1
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- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
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- JZMJDSHXVKJFKW-UHFFFAOYSA-M methyl sulfate(1-) Chemical compound COS([O-])(=O)=O JZMJDSHXVKJFKW-UHFFFAOYSA-M 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/175,251 US7654221B2 (en) | 2003-10-06 | 2005-07-06 | Apparatus for electroless deposition of metals onto semiconductor substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200800412A TW200800412A (en) | 2008-01-01 |
| TWI343840B true TWI343840B (en) | 2011-06-21 |
Family
ID=37656337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095124386A TWI343840B (en) | 2005-07-06 | 2006-07-04 | Apparatus for electroless deposition of metals onto semiconductor substrates |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2007046156A (ja) |
| KR (1) | KR101246838B1 (ja) |
| CN (1) | CN1900358A (ja) |
| TW (1) | TWI343840B (ja) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7966968B2 (en) | 2007-04-27 | 2011-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electroless plating apparatus with non-liquid heating source |
| NL1035265C2 (nl) * | 2008-04-07 | 2009-10-08 | Meco Equip Eng | Werkwijze en inrichting voor het elektrolytisch galvaniseren van niet-metallische glasachtige substraten. |
| TWI427196B (zh) * | 2009-05-22 | 2014-02-21 | Hon Hai Prec Ind Co Ltd | 納米級金屬粒子／金屬複合鍍層的形成裝置及形成方法 |
| US8198547B2 (en) | 2009-07-23 | 2012-06-12 | Lexmark International, Inc. | Z-directed pass-through components for printed circuit boards |
| JP5251941B2 (ja) * | 2010-09-01 | 2013-07-31 | 東京エレクトロン株式会社 | 液処理装置、液処理方法及び記憶媒体 |
| US20130341078A1 (en) | 2012-06-20 | 2013-12-26 | Keith Bryan Hardin | Z-directed printed circuit board components having a removable end portion and methods therefor |
| US8943684B2 (en) | 2011-08-31 | 2015-02-03 | Lexmark International, Inc. | Continuous extrusion process for manufacturing a Z-directed component for a printed circuit board |
| US8658245B2 (en) * | 2011-08-31 | 2014-02-25 | Lexmark International, Inc. | Spin coat process for manufacturing a Z-directed component for a printed circuit board |
| US10269615B2 (en) * | 2011-09-09 | 2019-04-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| JP5666419B2 (ja) * | 2011-11-28 | 2015-02-12 | 東京エレクトロン株式会社 | めっき処理装置、めっき処理方法および記憶媒体 |
| TWI458546B (zh) | 2011-12-14 | 2014-11-01 | Ind Tech Res Inst | 化學水浴法鍍膜設備 |
| US9752231B2 (en) * | 2012-05-11 | 2017-09-05 | Lam Research Corporation | Apparatus for electroless metal deposition having filter system and associated oxygen source |
| JP6168273B2 (ja) * | 2012-10-16 | 2017-07-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
| CN105551956A (zh) * | 2015-12-29 | 2016-05-04 | 中国电子科技集团公司第五十五研究所 | 用于半导体背面通孔金属化种子层的化学镀钯方法 |
| JP2017168528A (ja) * | 2016-03-14 | 2017-09-21 | 東芝メモリ株式会社 | 半導体製造方法 |
| SG11201811476XA (en) * | 2016-07-20 | 2019-02-27 | Technic | Electro-depositing metal layers of uniform thickness on semiconducting wafers |
| JP6963524B2 (ja) * | 2018-03-20 | 2021-11-10 | キオクシア株式会社 | 電解メッキ装置 |
| CN109985745B (zh) * | 2019-04-10 | 2020-07-28 | 业成科技（成都）有限公司 | 可提高曲面喷涂均匀性之喷涂装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3450179B2 (ja) * | 1998-03-31 | 2003-09-22 | 京セラ株式会社 | 表面処理装置 |
| JP3639151B2 (ja) * | 1999-03-11 | 2005-04-20 | 株式会社荏原製作所 | めっき装置 |
| JP2003115474A (ja) * | 2001-10-03 | 2003-04-18 | Ebara Corp | 基板処理装置及び方法 |
| JP3985858B2 (ja) * | 2001-10-17 | 2007-10-03 | 株式会社荏原製作所 | めっき装置 |
| KR101087633B1 (ko) * | 2002-11-15 | 2011-11-30 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판처리장치 및 기판처리방법 |
| JP2004214508A (ja) * | 2003-01-07 | 2004-07-29 | Ebara Corp | 配線形成方法及びその装置 |
| JP2004346399A (ja) * | 2003-05-23 | 2004-12-09 | Ebara Corp | 基板処理方法及び基板処理装置 |
| JP2005060722A (ja) * | 2003-08-08 | 2005-03-10 | Ebara Corp | 基板処理方法及び基板処理装置 |
| EP1676295A2 (en) * | 2003-10-06 | 2006-07-05 | Applied Materials, Inc. | Apparatus to improve wafer temperature uniformity for face-up wet processing |
| US7465358B2 (en) * | 2003-10-15 | 2008-12-16 | Applied Materials, Inc. | Measurement techniques for controlling aspects of a electroless deposition process |
-
2006
- 2006-07-04 TW TW095124386A patent/TWI343840B/zh not_active IP Right Cessation
- 2006-07-05 KR KR1020060062879A patent/KR101246838B1/ko active IP Right Grant
- 2006-07-06 JP JP2006186953A patent/JP2007046156A/ja active Pending
- 2006-07-06 CN CNA2006100985615A patent/CN1900358A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW200800412A (en) | 2008-01-01 |
| CN1900358A (zh) | 2007-01-24 |
| KR20070005511A (ko) | 2007-01-10 |
| KR101246838B1 (ko) | 2013-03-28 |
| JP2007046156A (ja) | 2007-02-22 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |