TWI342490B - Flash memory data read/write processing method - Google Patents

Flash memory data read/write processing method Download PDF

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Publication number
TWI342490B
TWI342490B TW096134034A TW96134034A TWI342490B TW I342490 B TWI342490 B TW I342490B TW 096134034 A TW096134034 A TW 096134034A TW 96134034 A TW96134034 A TW 96134034A TW I342490 B TWI342490 B TW I342490B
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TW
Taiwan
Prior art keywords
data
flash memory
state
encoding
decoding
Prior art date
Application number
TW096134034A
Other languages
English (en)
Chinese (zh)
Other versions
TW200912640A (en
Original Assignee
Memoright Memoritech Corp
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Publication date
Application filed by Memoright Memoritech Corp filed Critical Memoright Memoritech Corp
Publication of TW200912640A publication Critical patent/TW200912640A/zh
Application granted granted Critical
Publication of TWI342490B publication Critical patent/TWI342490B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
TW096134034A 2007-05-30 2007-09-12 Flash memory data read/write processing method TWI342490B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB200710074652XA CN100468576C (zh) 2007-05-30 2007-05-30 闪存数据读写处理方法

Publications (2)

Publication Number Publication Date
TW200912640A TW200912640A (en) 2009-03-16
TWI342490B true TWI342490B (en) 2011-05-21

Family

ID=38912611

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096134034A TWI342490B (en) 2007-05-30 2007-09-12 Flash memory data read/write processing method

Country Status (5)

Country Link
US (1) US20100138594A1 (enExample)
JP (1) JP2010528380A (enExample)
CN (1) CN100468576C (enExample)
TW (1) TWI342490B (enExample)
WO (1) WO2008145070A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100468576C (zh) * 2007-05-30 2009-03-11 忆正存储技术(深圳)有限公司 闪存数据读写处理方法
US7826277B2 (en) * 2008-03-10 2010-11-02 Hynix Semiconductor Inc. Non-volatile memory device and method of operating the same
US8341501B2 (en) * 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
TWI415130B (zh) * 2009-06-02 2013-11-11 Silicon Motion Inc 快閃記憶體之控制器以及於快閃記憶體存取資料的方法
US9170933B2 (en) 2010-06-28 2015-10-27 International Business Machines Corporation Wear-level of cells/pages/sub-pages/blocks of a memory
CN102063936A (zh) * 2010-10-27 2011-05-18 苏州亮智科技有限公司 一种提高闪存可靠性的方法
US9093154B2 (en) * 2012-01-16 2015-07-28 Silicon Motion, Inc. Method, memory controller and system for reading data stored in flash memory
JP5962258B2 (ja) 2012-06-29 2016-08-03 富士通株式会社 データ変換方法、データ変換装置およびデータ変換プログラム
KR20140076127A (ko) * 2012-12-12 2014-06-20 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 동작 방법과, 이를 포함하는 데이터 처리 시스템
CN103678148A (zh) * 2013-12-03 2014-03-26 华为技术有限公司 提高闪存芯片寿命方法和装置
WO2015116158A2 (en) * 2014-01-31 2015-08-06 Hewlett-Packard Development Company, L.P. Encoding data in a memory array
JP6155214B2 (ja) * 2014-03-25 2017-06-28 京セラドキュメントソリューションズ株式会社 データ記憶装置及び画像処理装置
WO2015154298A1 (zh) * 2014-04-11 2015-10-15 华为技术有限公司 一种数据处理方法、装置
CN104467871B (zh) * 2014-11-17 2018-03-27 哈尔滨工业大学 提高NAND Flash存储可靠性的数据存储方法
CN105976866B (zh) * 2016-04-21 2019-11-26 清华大学 二进制数据序列的编码方法、存储装置和电子设备
CN106547487A (zh) * 2016-10-21 2017-03-29 华中科技大学 一种提高闪存可靠性的数据塑型方法
CN107102820B (zh) * 2017-04-17 2018-07-06 北京得瑞领新科技有限公司 一种nand闪存设备的数据处理方法及装置
CN107957917A (zh) * 2017-10-25 2018-04-24 深圳市致存微电子企业（有限合伙） 数据处理方法、主机、存储设备及存储介质
US11099788B2 (en) * 2019-10-21 2021-08-24 Advanced Micro Devices, Inc. Near-memory data reduction
US11232844B2 (en) * 2020-05-22 2022-01-25 Samsung Electronics Co., Ltd. Memory with adaptive slow-cell data compression
JP2023139460A (ja) 2022-03-22 2023-10-04 株式会社東芝 磁気ディスク装置
CN115512757B (zh) * 2022-11-02 2023-03-21 深圳三地一芯电子有限责任公司 错误复现修复方法、装置、设备及存储介质

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673224A (en) * 1996-02-23 1997-09-30 Micron Quantum Devices, Inc. Segmented non-volatile memory array with multiple sources with improved word line control circuitry
SE512613C2 (sv) * 1996-12-30 2000-04-10 Ericsson Telefon Ab L M Metod och organ för informationshantering
JP2000231793A (ja) * 1999-02-09 2000-08-22 Nec Corp フラッシュメモリの書込制御装置及びその書込制御方法
JP4280055B2 (ja) * 2001-11-28 2009-06-17 株式会社Ａｃｃｅｓｓ メモリ制御方法および装置
CN100364013C (zh) * 2002-09-07 2008-01-23 鸿富锦精密工业（深圳）有限公司 在闪存中存放校验码的方法及装置
JP2005038518A (ja) * 2003-07-15 2005-02-10 Oki Electric Ind Co Ltd メモリのデータ書き換え方法
JP2005157781A (ja) * 2003-11-26 2005-06-16 Sony Corp 情報処理装置および情報処理方法
CN100468576C (zh) * 2007-05-30 2009-03-11 忆正存储技术(深圳)有限公司 闪存数据读写处理方法
US8078795B2 (en) * 2008-01-31 2011-12-13 Dell Products L.P. Methods and media for writing data to flash memory
US7961520B2 (en) * 2009-08-18 2011-06-14 Seagate Technology Llc Encoding and decoding to reduce switching of flash memory transistors

Also Published As

Publication number Publication date
US20100138594A1 (en) 2010-06-03
WO2008145070A1 (en) 2008-12-04
CN101083138A (zh) 2007-12-05
CN100468576C (zh) 2009-03-11
TW200912640A (en) 2009-03-16
JP2010528380A (ja) 2010-08-19

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