CN100468576C - 闪存数据读写处理方法 - Google Patents

闪存数据读写处理方法 Download PDF

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Publication number
CN100468576C
CN100468576C CNB200710074652XA CN200710074652A CN100468576C CN 100468576 C CN100468576 C CN 100468576C CN B200710074652X A CNB200710074652X A CN B200710074652XA CN 200710074652 A CN200710074652 A CN 200710074652A CN 100468576 C CN100468576 C CN 100468576C
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China
Prior art keywords
data
flash memory
encoding
binary data
specifically
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CNB200710074652XA
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Chinese (zh)
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CN101083138A (zh
Inventor
黄河
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Zhiyu Technology Co ltd
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Memoright Shenzhen Co Ltd
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Priority to CNB200710074652XA priority Critical patent/CN100468576C/zh
Priority to TW096134034A priority patent/TWI342490B/zh
Publication of CN101083138A publication Critical patent/CN101083138A/zh
Priority to PCT/CN2008/071142 priority patent/WO2008145070A1/en
Priority to JP2010509666A priority patent/JP2010528380A/ja
Application granted granted Critical
Publication of CN100468576C publication Critical patent/CN100468576C/zh
Priority to US12/627,841 priority patent/US20100138594A1/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles

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  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
CNB200710074652XA 2007-05-30 2007-05-30 闪存数据读写处理方法 Active CN100468576C (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CNB200710074652XA CN100468576C (zh) 2007-05-30 2007-05-30 闪存数据读写处理方法
TW096134034A TWI342490B (en) 2007-05-30 2007-09-12 Flash memory data read/write processing method
PCT/CN2008/071142 WO2008145070A1 (en) 2007-05-30 2008-05-30 Flash memory data read/write processing method
JP2010509666A JP2010528380A (ja) 2007-05-30 2008-05-30 フラッシュメモリのリード・ライト処理方法
US12/627,841 US20100138594A1 (en) 2007-05-30 2009-11-30 Flash memory data read/write processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB200710074652XA CN100468576C (zh) 2007-05-30 2007-05-30 闪存数据读写处理方法

Publications (2)

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CN101083138A CN101083138A (zh) 2007-12-05
CN100468576C true CN100468576C (zh) 2009-03-11

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CNB200710074652XA Active CN100468576C (zh) 2007-05-30 2007-05-30 闪存数据读写处理方法

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US (1) US20100138594A1 (enExample)
JP (1) JP2010528380A (enExample)
CN (1) CN100468576C (enExample)
TW (1) TWI342490B (enExample)
WO (1) WO2008145070A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105976866A (zh) * 2016-04-21 2016-09-28 清华大学 二进制数据序列的编码方法、存储装置和电子设备

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CN100468576C (zh) * 2007-05-30 2009-03-11 忆正存储技术(深圳)有限公司 闪存数据读写处理方法
US7826277B2 (en) * 2008-03-10 2010-11-02 Hynix Semiconductor Inc. Non-volatile memory device and method of operating the same
US8341501B2 (en) * 2009-04-30 2012-12-25 International Business Machines Corporation Adaptive endurance coding of non-volatile memories
TWI415130B (zh) * 2009-06-02 2013-11-11 Silicon Motion Inc 快閃記憶體之控制器以及於快閃記憶體存取資料的方法
US9170933B2 (en) 2010-06-28 2015-10-27 International Business Machines Corporation Wear-level of cells/pages/sub-pages/blocks of a memory
CN102063936A (zh) * 2010-10-27 2011-05-18 苏州亮智科技有限公司 一种提高闪存可靠性的方法
US9093154B2 (en) * 2012-01-16 2015-07-28 Silicon Motion, Inc. Method, memory controller and system for reading data stored in flash memory
JP5962258B2 (ja) 2012-06-29 2016-08-03 富士通株式会社 データ変換方法、データ変換装置およびデータ変換プログラム
KR20140076127A (ko) * 2012-12-12 2014-06-20 에스케이하이닉스 주식회사 비휘발성 메모리 장치 및 동작 방법과, 이를 포함하는 데이터 처리 시스템
CN103678148A (zh) * 2013-12-03 2014-03-26 华为技术有限公司 提高闪存芯片寿命方法和装置
WO2015116158A2 (en) * 2014-01-31 2015-08-06 Hewlett-Packard Development Company, L.P. Encoding data in a memory array
JP6155214B2 (ja) * 2014-03-25 2017-06-28 京セラドキュメントソリューションズ株式会社 データ記憶装置及び画像処理装置
WO2015154298A1 (zh) * 2014-04-11 2015-10-15 华为技术有限公司 一种数据处理方法、装置
CN104467871B (zh) * 2014-11-17 2018-03-27 哈尔滨工业大学 提高NAND Flash存储可靠性的数据存储方法
CN106547487A (zh) * 2016-10-21 2017-03-29 华中科技大学 一种提高闪存可靠性的数据塑型方法
CN107102820B (zh) * 2017-04-17 2018-07-06 北京得瑞领新科技有限公司 一种nand闪存设备的数据处理方法及装置
CN107957917A (zh) * 2017-10-25 2018-04-24 深圳市致存微电子企业（有限合伙） 数据处理方法、主机、存储设备及存储介质
US11099788B2 (en) * 2019-10-21 2021-08-24 Advanced Micro Devices, Inc. Near-memory data reduction
US11232844B2 (en) * 2020-05-22 2022-01-25 Samsung Electronics Co., Ltd. Memory with adaptive slow-cell data compression
JP2023139460A (ja) 2022-03-22 2023-10-04 株式会社東芝 磁気ディスク装置
CN115512757B (zh) * 2022-11-02 2023-03-21 深圳三地一芯电子有限责任公司 错误复现修复方法、装置、设备及存储介质

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US5673224A (en) * 1996-02-23 1997-09-30 Micron Quantum Devices, Inc. Segmented non-volatile memory array with multiple sources with improved word line control circuitry
SE512613C2 (sv) * 1996-12-30 2000-04-10 Ericsson Telefon Ab L M Metod och organ för informationshantering
JP2000231793A (ja) * 1999-02-09 2000-08-22 Nec Corp フラッシュメモリの書込制御装置及びその書込制御方法
JP4280055B2 (ja) * 2001-11-28 2009-06-17 株式会社Ａｃｃｅｓｓ メモリ制御方法および装置
CN100364013C (zh) * 2002-09-07 2008-01-23 鸿富锦精密工业（深圳）有限公司 在闪存中存放校验码的方法及装置
JP2005038518A (ja) * 2003-07-15 2005-02-10 Oki Electric Ind Co Ltd メモリのデータ書き換え方法
JP2005157781A (ja) * 2003-11-26 2005-06-16 Sony Corp 情報処理装置および情報処理方法
CN100468576C (zh) * 2007-05-30 2009-03-11 忆正存储技术(深圳)有限公司 闪存数据读写处理方法
US8078795B2 (en) * 2008-01-31 2011-12-13 Dell Products L.P. Methods and media for writing data to flash memory
US7961520B2 (en) * 2009-08-18 2011-06-14 Seagate Technology Llc Encoding and decoding to reduce switching of flash memory transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105976866A (zh) * 2016-04-21 2016-09-28 清华大学 二进制数据序列的编码方法、存储装置和电子设备
CN105976866B (zh) * 2016-04-21 2019-11-26 清华大学 二进制数据序列的编码方法、存储装置和电子设备

Also Published As

Publication number Publication date
US20100138594A1 (en) 2010-06-03
WO2008145070A1 (en) 2008-12-04
CN101083138A (zh) 2007-12-05
TW200912640A (en) 2009-03-16
JP2010528380A (ja) 2010-08-19
TWI342490B (en) 2011-05-21

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