TWI341018B - Insulation structure for high temperature conditions and manufacturing method thereof - Google Patents

Insulation structure for high temperature conditions and manufacturing method thereof

Info

Publication number
TWI341018B
TWI341018B TW096108134A TW96108134A TWI341018B TW I341018 B TWI341018 B TW I341018B TW 096108134 A TW096108134 A TW 096108134A TW 96108134 A TW96108134 A TW 96108134A TW I341018 B TWI341018 B TW I341018B
Authority
TW
Taiwan
Prior art keywords
manufacturing
high temperature
temperature conditions
insulation structure
insulation
Prior art date
Application number
TW096108134A
Other languages
English (en)
Other versions
TW200742016A (en
Inventor
Young Ki Lee
Seog Moon Choi
Sang Hyun Shin
Original Assignee
Samsung Electro Mech
Samsung Led Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mech, Samsung Led Co Ltd filed Critical Samsung Electro Mech
Publication of TW200742016A publication Critical patent/TW200742016A/zh
Application granted granted Critical
Publication of TWI341018B publication Critical patent/TWI341018B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03—Metal processing
    • H05K2203/0315—Oxidising metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0542—Continuous temporary metal layer over metal pattern

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096108134A 2006-03-20 2007-03-09 Insulation structure for high temperature conditions and manufacturing method thereof TWI341018B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060025454A KR100764386B1 (ko) 2006-03-20 2006-03-20 고온공정에 적합한 절연구조체 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200742016A TW200742016A (en) 2007-11-01
TWI341018B true TWI341018B (en) 2011-04-21

Family

ID=38516871

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108134A TWI341018B (en) 2006-03-20 2007-03-09 Insulation structure for high temperature conditions and manufacturing method thereof

Country Status (5)

Country Link
US (3) US7998879B2 (zh)
JP (1) JP4959387B2 (zh)
KR (1) KR100764386B1 (zh)
CN (1) CN100562212C (zh)
TW (1) TWI341018B (zh)

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KR101124102B1 (ko) * 2009-08-24 2012-03-21 삼성전기주식회사 발광 소자 패키지용 기판 및 이를 포함하는 발광 소자 패키지
KR101237668B1 (ko) 2011-08-10 2013-02-26 삼성전기주식회사 반도체 패키지 기판
CN109960438B (zh) * 2019-03-19 2021-04-23 京东方科技集团股份有限公司 基板及其制作方法、触控显示装置
US11608162B2 (en) * 2020-06-10 2023-03-21 Goodrich Corporation Aircraft wheel torque bar spacer

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JP4556422B2 (ja) 2003-12-02 2010-10-06 パナソニック株式会社 電子部品およびその製造方法
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KR100665222B1 (ko) 2005-07-26 2007-01-09 삼성전기주식회사 확산재료를 이용한 엘이디 패키지 및 그 제조 방법
KR100661614B1 (ko) 2005-10-07 2006-12-26 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 ｌｅｄ 패키지 및 그 제조방법
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KR100930171B1 (ko) 2006-12-05 2009-12-07 삼성전기주식회사 백색 발광장치 및 이를 이용한 백색 광원 모듈
KR100855065B1 (ko) 2007-04-24 2008-08-29 삼성전기주식회사 발광 다이오드 패키지
KR100982980B1 (ko) 2007-05-15 2010-09-17 삼성엘이디 주식회사 면 광원 장치 및 이를 구비하는 ｌｃｄ 백라이트 유닛
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KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
KR101332794B1 (ko) 2008-08-05 2013-11-25 삼성전자주식회사 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법
KR20100030470A (ko) 2008-09-10 2010-03-18 삼성전자주식회사 다양한 색 온도의 백색광을 제공할 수 있는 발광 장치 및 발광 시스템
KR101530876B1 (ko) 2008-09-16 2015-06-23 삼성전자 주식회사 발광량이 증가된 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및 발광 장치의 제조 방법
US8008683B2 (en) 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device

Also Published As

Publication number Publication date
US7998879B2 (en) 2011-08-16
TW200742016A (en) 2007-11-01
KR100764386B1 (ko) 2007-10-08
JP2007258714A (ja) 2007-10-04
US20070215894A1 (en) 2007-09-20
US20110260198A1 (en) 2011-10-27
US20150084089A1 (en) 2015-03-26
JP4959387B2 (ja) 2012-06-20
CN101043791A (zh) 2007-09-26
KR20070095145A (ko) 2007-09-28
US9231167B2 (en) 2016-01-05
CN100562212C (zh) 2009-11-18

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