TWI340390B - Semiconductor memory device comprising memory element programming circuits having different programming threshold power supply voltages - Google Patents
Semiconductor memory device comprising memory element programming circuits having different programming threshold power supply voltagesInfo
- Publication number
- TWI340390B TWI340390B TW096113190A TW96113190A TWI340390B TW I340390 B TWI340390 B TW I340390B TW 096113190 A TW096113190 A TW 096113190A TW 96113190 A TW96113190 A TW 96113190A TW I340390 B TWI340390 B TW I340390B
- Authority
- TW
- Taiwan
- Prior art keywords
- power supply
- supply voltages
- threshold power
- memory device
- programming
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
- G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006121962A JP4191202B2 (ja) | 2006-04-26 | 2006-04-26 | 不揮発性記憶素子を搭載した半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200802391A TW200802391A (en) | 2008-01-01 |
TWI340390B true TWI340390B (en) | 2011-04-11 |
Family
ID=38648130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096113190A TWI340390B (en) | 2006-04-26 | 2007-04-14 | Semiconductor memory device comprising memory element programming circuits having different programming threshold power supply voltages |
Country Status (3)
Country | Link |
---|---|
US (1) | US7706166B2 (zh) |
JP (1) | JP4191202B2 (zh) |
TW (1) | TWI340390B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101102776B1 (ko) * | 2008-02-13 | 2012-01-05 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자의 단위 셀 및 이를 구비한 비휘발성메모리 소자 |
KR101137871B1 (ko) * | 2010-03-29 | 2012-04-18 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그의 구동 방법 |
FR3058567B1 (fr) | 2016-11-08 | 2019-01-25 | Stmicroelectronics (Rousset) Sas | Circuit integre comportant une structure antifusible, et procede de realisation |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02179264A (ja) | 1988-12-28 | 1990-07-12 | Nec Corp | 昇圧回路 |
US5812477A (en) * | 1996-10-03 | 1998-09-22 | Micron Technology, Inc. | Antifuse detection circuit |
US6606267B2 (en) * | 1998-06-23 | 2003-08-12 | Sandisk Corporation | High data rate write process for non-volatile flash memories |
KR100359855B1 (ko) | 1998-06-30 | 2003-01-15 | 주식회사 하이닉스반도체 | 가변전압발생기를이용한앤티퓨즈의프로그래밍회로 |
JP2004022736A (ja) * | 2002-06-14 | 2004-01-22 | Nec Electronics Corp | 不揮発性ラッチ回路および半導体装置 |
JP4108519B2 (ja) | 2003-03-31 | 2008-06-25 | エルピーダメモリ株式会社 | 制御回路、半導体記憶装置、及び制御方法 |
US6690597B1 (en) * | 2003-04-24 | 2004-02-10 | Hewlett-Packard Development Company, L.P. | Multi-bit PROM memory cell |
KR100512178B1 (ko) * | 2003-05-28 | 2005-09-02 | 삼성전자주식회사 | 플렉서블한 열 리던던시 스킴을 갖는 반도체 메모리 장치 |
KR100702004B1 (ko) * | 2004-08-02 | 2007-03-30 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 비트 라인 센싱 방법 |
KR100645055B1 (ko) * | 2004-10-28 | 2006-11-10 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US7339848B1 (en) * | 2005-11-03 | 2008-03-04 | Cypress Semiconductor Corporation | Anti-fuse latch circuit and method including self-test |
-
2006
- 2006-04-26 JP JP2006121962A patent/JP4191202B2/ja active Active
-
2007
- 2007-04-14 TW TW096113190A patent/TWI340390B/zh active
- 2007-04-24 US US11/790,200 patent/US7706166B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4191202B2 (ja) | 2008-12-03 |
US20070253236A1 (en) | 2007-11-01 |
US7706166B2 (en) | 2010-04-27 |
TW200802391A (en) | 2008-01-01 |
JP2007294031A (ja) | 2007-11-08 |
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