TWI337746B - System and method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages - Google Patents
System and method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages Download PDFInfo
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- TWI337746B TWI337746B TW096119384A TW96119384A TWI337746B TW I337746 B TWI337746 B TW I337746B TW 096119384 A TW096119384 A TW 096119384A TW 96119384 A TW96119384 A TW 96119384A TW I337746 B TWI337746 B TW I337746B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/425,790 US7486561B2 (en) | 2006-06-22 | 2006-06-22 | Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
| US11/425,794 US7489549B2 (en) | 2006-06-22 | 2006-06-22 | System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200814084A TW200814084A (en) | 2008-03-16 |
| TWI337746B true TWI337746B (en) | 2011-02-21 |
Family
ID=38834212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096119384A TWI337746B (en) | 2006-06-22 | 2007-05-30 | System and method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2030205B1 (enExample) |
| JP (1) | JP4994447B2 (enExample) |
| KR (1) | KR101075253B1 (enExample) |
| AT (1) | ATE515771T1 (enExample) |
| TW (1) | TWI337746B (enExample) |
| WO (1) | WO2007149677A2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ITRM20080114A1 (it) * | 2008-02-29 | 2009-09-01 | Micron Technology Inc | Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria. |
| US7924614B2 (en) | 2009-01-19 | 2011-04-12 | Macronix International Co., Ltd. | Memory and boundary searching method thereof |
| US8504759B2 (en) * | 2009-05-26 | 2013-08-06 | Micron Technology, Inc. | Method and devices for controlling power loss |
| JP2011159364A (ja) * | 2010-02-02 | 2011-08-18 | Toshiba Corp | 不揮発性半導体記憶装置および不揮発性半導体記憶装置の駆動方法 |
| JP2011198419A (ja) * | 2010-03-19 | 2011-10-06 | Toshiba Corp | 不揮発性半導体記憶装置およびその書き込み方法 |
| KR20110126408A (ko) | 2010-05-17 | 2011-11-23 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법 |
| JP2012190523A (ja) | 2011-03-14 | 2012-10-04 | Toshiba Corp | 不揮発性半導体記憶装置 |
| US9092320B2 (en) | 2012-10-15 | 2015-07-28 | Hitachi, Ltd. | Storage system which includes non-volatile semiconductor storage medium, and storage control method of storage system |
| US9257203B2 (en) * | 2012-12-06 | 2016-02-09 | Micron Technology, Inc. | Setting a default read signal based on error correction |
| KR102175039B1 (ko) * | 2013-06-25 | 2020-11-05 | 삼성전자주식회사 | 불휘발성 메모리 장치의 데이터 기입 방법 |
| KR20160032910A (ko) | 2014-09-17 | 2016-03-25 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
| JP6453718B2 (ja) * | 2015-06-12 | 2019-01-16 | 東芝メモリ株式会社 | 半導体記憶装置及びメモリシステム |
| US10460816B2 (en) | 2017-12-08 | 2019-10-29 | Sandisk Technologies Llc | Systems and methods for high-performance write operations |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3930074B2 (ja) * | 1996-09-30 | 2007-06-13 | 株式会社ルネサステクノロジ | 半導体集積回路及びデータ処理システム |
| KR100257868B1 (ko) * | 1997-12-29 | 2000-06-01 | 윤종용 | 노어형 플래시 메모리 장치의 소거 방법 |
| JP3957985B2 (ja) * | 2001-03-06 | 2007-08-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
| US6657891B1 (en) * | 2002-11-29 | 2003-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device for storing multivalued data |
| JP3863485B2 (ja) * | 2002-11-29 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP4410188B2 (ja) * | 2004-11-12 | 2010-02-03 | 株式会社東芝 | 半導体記憶装置のデータ書き込み方法 |
| US7212436B2 (en) * | 2005-02-28 | 2007-05-01 | Micron Technology, Inc. | Multiple level programming in a non-volatile memory device |
-
2007
- 2007-05-25 EP EP07797758A patent/EP2030205B1/en active Active
- 2007-05-25 JP JP2009516619A patent/JP4994447B2/ja active Active
- 2007-05-25 WO PCT/US2007/069711 patent/WO2007149677A2/en not_active Ceased
- 2007-05-25 AT AT07797758T patent/ATE515771T1/de not_active IP Right Cessation
- 2007-05-25 KR KR1020087023383A patent/KR101075253B1/ko not_active Expired - Fee Related
- 2007-05-30 TW TW096119384A patent/TWI337746B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2030205A2 (en) | 2009-03-04 |
| JP2009541909A (ja) | 2009-11-26 |
| KR20090007298A (ko) | 2009-01-16 |
| TW200814084A (en) | 2008-03-16 |
| EP2030205B1 (en) | 2011-07-06 |
| JP4994447B2 (ja) | 2012-08-08 |
| WO2007149677A3 (en) | 2008-05-22 |
| WO2007149677A2 (en) | 2007-12-27 |
| KR101075253B1 (ko) | 2011-10-20 |
| ATE515771T1 (de) | 2011-07-15 |
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