TWI331383B - Semiconductor package structure, stiffener and method of making same - Google Patents

Semiconductor package structure, stiffener and method of making same Download PDF

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TWI331383B
TWI331383B TW095129894A TW95129894A TWI331383B TW I331383 B TWI331383 B TW I331383B TW 095129894 A TW095129894 A TW 095129894A TW 95129894 A TW95129894 A TW 95129894A TW I331383 B TWI331383 B TW I331383B
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reinforcing material
substrate
semiconductor
wafer
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TW200731482A (en
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Chienhsiun Lee
Yung Kuan Hsiao
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Taiwan Semiconductor Mfg
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Description

1331383 . 九、發明說明： * 【發明所屬之技術領域】 本發明係有關於一種半導體封裝結構及其製造方 法，特別有關於一種半導體封裝結構之加強材（stiffener) 的改良，使得晶片之底部填膠及清潔製程更有效率。 【先前技術】 在微電子工業中》具有積體電路之晶片通常被固定 φ 在封裝載體上，例如基底、電路板或導線架，其可提供 由晶片至封裝外部的電性連接。在覆晶接合（flip chip mounting)的封裝配置中，晶片具有矩陣式的導電接點， 稱為接合墊(bond pads)，其電性連接至基底上相對應的導 電接點，稱為錫球（solder balls)或錫錯凸塊（solder bumps)。將錫錯凸塊與接合墊相對應，並以再回流(reflow) 製程使得晶片與基底間形成銲錫接合而產生電性連接。 覆晶接合後晶片與基底之間會產生間隙。 • 晶片和基底通常由不同的材料組成，其熱膨脹係數 不匹配，因此，受熱時晶片和基底之間會產生不同的尺 寸變化，而在晶片和基底之間的電性連接產生熱應力。 若不補償在熱膨脹方面的差異，將使得晶片性能降低， 並損害銲錫接合或使得封裝失效。當晶片尺寸增加時， 在晶片和基底間熱膨脹係數不匹配的效應將更加顯著， 而且在疊層晶片封裝（stacked die package)中，其熱膨脹 係數不匹配的影響亦大於單一晶片封裝，甚至造成晶片 0503-A31843TWF/Kelly 5 1331383 受損。 為了改善覆晶接合中電性連接的可靠度，通常會用 封膠材質或底部填膠（underfiU)填滿晶片和基底間的間 隙。底部填膠會在熱循環或當晶片與基底有明顯溫度差 異時，藉由降低電性連接受到的應力，以增加封裝的疲 勞，命(fatigue life)並改善電性連接的可靠度。底部填膠 可完^密封該間隙，將電性連接處與周遭環境隔離，並 且可提供封裝體適當的機械強度以對抗衝擊及彎曲。底 部填膠更可提供熱傳導路徑以移除晶片產生的熱，如此 可降低晶片與基底間的溫度差異，因此底部填膠可增加 封裝體的壽命。 為了更進一步提升封裝體的剛性，通常會在封裝體 中加入加強材，因為加強材為高剛性材質，可以讓封裝 體比較不會扭曲變形。 、
在傳統的封裝製程中，先將清潔溶劑注入間隙中以 除去殘留的銲錫助㈣，再將底部填膠注人在晶片與基 :間mt、。然而，其缺點為清潔溶劑會被加強材： 録劑務彳絲有效並徹底地完成，當有銲踢助 隙传會造成接下來的覆晶底部填膠層產生空 隙，=最後封以品的品質及可靠度降低許多。 間的間裝：另一缺點為在底部填膠注入晶片與基底 部填膠塗佈部填膠點膠機會被加強材阻礙，使得底 轉^佈製程耗時又不容易徹底完成。 底 此業界亟需一種可克服上述問題之半導體封裴 0503-A31843TWF/Kelly 結構。 【發明内容】 ㈣日f的目的在於提供—種具有導熱加強材的半導 體封裝結構以及其製造方法。 本發明實施例中提供—種半導體封裝結構，包括一 j，具有-正面及一背面；一半導體晶片固定在該基 氐、正面，導熱加強材固定在該基底的正面並包圍該 晶片，加強材具有第一區及第二區，其中第一區丄 區寬’使得點膠機容易進出晶片與基底間的間隙；一底 部填膠層填充在該間隙中並硬化；以及複數個錫球固定 在基底的背面。 *為了讓本發明之上述目的、特徵、及優點能更明顯 易it，以下配合所附圖式，作詳細說明如下·· 【實施方式】 第1圖為傳統覆晶封裝半成品的剖面圖，具有一加 強材固定在基底上。覆晶封裝10包括一晶片30，其具有 上表面32及下表面34; —組錫鉛凸塊40連接至晶片下 表面34的接觸墊（未圖示）；晶片3〇固定在晶片3〇下的 第一基底20上；錫鉛凸塊40也連接至第一基底2〇上表 面的接觸墊（未圖示）；底部填膠5〇填充在晶片3〇與第一 基底20間，使得覆晶封裝1〇更堅固，保護晶片3〇避免 彎曲受損；一組錫球60固定至第一基底2()下表面的接 觸墊（未圖示），以及第二基底70的接觸墊（未圖示），第 〇503-A31843TWF/Kelly 7 1331383 • 二基底70可以是印刷電路板或此技藝人士熟知之多層印 刷電路板。 a 覆晶封裝10也可包括散熱片80以及加強材2，以避 免封裝體過度扭曲’散熱片80固定在晶片3〇頂端以消 除晶片30產生的熱，並且可抵銷平衡因為晶片3〇與第 一基底20之間熱膨脹不匹配所產生的應力。加強材2藉 由黏著劑5固定在第一基底2〇與散熱片8〇之間，加強 材2的上視圖如第2圖所示，傳統的覆晶封裝1〇可包括 •導熱膠材（thermal interface material，TIM) 120 設置於晶片 30和散熱片80之間，以轉移晶片3〇產生的熱至散: 80 ° … 接下來介紹本發明之實施例，本發明之實施例如第 3、4及5圖所示。第3圖為本發明之一實施例的覆晶封 裝半成品剖面圖’其中加強材固定在基底上。覆晶封裝 11包括第-基底20;加強材3藉由黏著劑5黏著在第一 基底20的上表面；晶片3〇藉由錫鉛凸塊4〇與第一基底 籲20的上表面接合’並且被包圍在加強材3之内；底部填 膠50填充在晶片30與第一基底2〇間的間隙並硬化；以 及複數個錫球60固定在第一基底2〇的背面。 加強材3較佳為具有大的表面積固定至第一基底2〇 上，其有助於在結構上強化覆晶封裝11，避免扭轉及彎 曲。加強材3的尺寸A多由封裝體的大小決定，並且至 少取決於第一基底20的尺寸及形狀。加強材3包括下方 之第區及上方之第二區，其中第一區較第二區寬，因 〇503-A31843TWF/KelIy 8
I33135J 此在加強材3中產生一凹 宭amh u 4。第4圖為依據本發明之一 實轭例的加強材3上視圖 π 過設計’讓點膠機針頭容易進出可經 間的間隙。在本發明之一實曰：〃第-基底20 度約為50〜m叫中’加強材第一區的寬 篦二區的宮痒的* 冋度約為50〜1500/zm;加強材 :度約為5〇〜11000…高度約為50〜1500 A m，然而’熟悉此技蓺 —或π崎 双人士备可瞭解，加強材3的尺寸 e又计疋為了讓點膠機容易進 ^ g 〇a ^ 著劑5固定在加強材的第二，由黏 加強材3具有-開口以3日_其中的晶片3〇。 3 ㈣尺寸取決於晶片_大小，加強材 #納及包11晶片3G°加強材及開口的尺寸最 佳為讓加強材3固定至第一 大，以降低_及料基底2G絲㈣盡可能地 材料加由剛性材質製成’包括金屬、陶竞或含石夕 其中金屬例如為銅。然而’熟悉此技藝人士當可 声的Hit強材3可由任何材料製成，只要能提供足夠程 =懷’使得覆晶封裝U避免彎曲及扭轉。此外，加 係數與第—基底2〇實質相當的材料製 成’且其導熱性可提供高度的散熱效率。 在製造過程中，加強材3組裝定位之後，晶片％可 穿=強材3固定在第一基底2〇的上表面，之後清潔溶 劑：由凹口 4注射入晶片3〇與第—基底2〇間的間隙， 以>月除殘留在間隙中的銲錫助銲齊卜接下來進行覆晶底 〇503-A31843TWF/Kelly 9 1331383 ..’部填膠製程，在晶片30與第一基底20間的間隙中形成 底部填膠50,在底部填膠製程完成之後，為了進一步提 升覆晶封裴11的剛性，如第5圖所示，可利用接著物6 (^attachment)例如環氧樹脂（ep〇xy)以連接加強材3的第一 區及第二區。在另一實施例中，接著物6可以是散熱片 80上的單一組件，固定在加強材的第一區及第二區之 上’以密封其中的晶片30。 由上述對本發明之覆晶封裝丨丨的描述可瞭解，在銲 •錫助銲劑清潔過程中，可以讓清潔溶劑注人機不會被加 強材3阻礙’因為凹口 4可使清潔溶劑更平順地注入晶 片30與第一基底2〇間的間隙，其優點為讓接下來形成 的底部填膠50實質上沒有空隙產生，因此，所完成的封 裝更$保證其品質及可靠度。此外，加強材3中的凹口 4 可使得在晶片與基底間進行底部填膠的點膠機針頭不會 被加強材阻礙，因此本發明之底部填膠製程比傳統製程 更加快速且更容易完成。 # 〜雖然本發明已揭露較佳實施例如上，然其並非用以 疋本發明，任何熟悉此項技藝者，在不脫離本發明之 精神和範圍内，當可做些許更動與㈣，因此本發明之 保護範圍當視後附之申請專利範圍所界定為準。 °5〇3-A3l843TWF/Kelly 10 1331383 -·【圖式簡單說明】 第1圖為習知的覆晶封裝半成品之剖面圖， 有一加強材固定在基底上。 八τ 〃 第2圖為習知的加強材之上視圖。 第3圖為本發明之一實施例的覆晶封裝半成品之為 面圖’其中具有一加強材固定在基底上。 】 第4圖為本發明之一實施例的加強材之上視圖 第5圖為本發明之一實施例的覆晶封裝半成品 • 面圖’其中具有一接著物連接至加強材。 剖 【主要元件符號說明】 4〜加強材的凹口； 6〜接著物； 20〜第一基底； 32〜晶片之上表面； 40〜錫鉛凸塊； 60〜锡球； 80〜散熱片； 2、3〜加強材； 5〜黏著劑； 10、11〜覆晶封裝； 30〜晶片； 34〜晶片之下表面； • 50〜底部填膠； 70〜第二基底； 120〜導熱膠材。 0503-A31843TWF/Kelly 11

Claims (1)

1331383 修正日期：99.5.26 第95129894號申請專利範圍修正本 十、申請專利範園： 1.一種半導體封裝結構，包含： 一基底，具有一正面及一背面； 一半導體晶片，固定在該基底的正面上； 片 -導熱加強材，固定在該基底的正面上且包圍該晶 其中該加強材具有一第一區及一第二區，該第一區 鄰近該基底’該第二區直接設置於該第—區的上表面之 上’且該第一區較該第二區寬； -底部填膠層，填充在該半導體晶片和 的一間隙中並硬化； -间 複數個錫球，固定在該基底的背面上；以及 一散熱片，固定在該加強材的第二區上，以 半導體晶片，其中在該散熱片與該加強材的第—區之: =間具有一凹口，且該凹口介於該半導體晶 加強材的第二區之間。 、 請侧第1項所述之半導體封裝結構，苴 ^加強材第-區的尺寸能夠讓—點膠機容易進出該間 中請專利範圍帛1項所述之半導體封I結構，呈 中該加強材第一區的寬度約為5〇〜 ： 50〜150〇#m。 同度約為 4.如申請專利範圍第1項所述之半 中該加強材第二區的寬度約為5G〜U+^體封裝結構，其 50〜15〇〇"m。 11〇〇〇心高度約為 0503-A31843TWF2/Keliy 12 1331383 第95129894號申請專利範圍修正本 C ^ ^ 修正日期·· 99.5.26 中該半導H利㈣第1項所述之半導體封裝結構，其 蛤體Ba片以鍚鉛凸塊接合至該基底。 6.如申料利範圍第〗項所述之半導體封裝 二:接著物用來連接該加強材的第-區及第：區以提 申請專利範圍第6項所述之半導體封裝結構，其 =者物用環氧樹脂（ep〇xy)來連接該加強材的 及第二區。 8. —種加強材，包含： ^ 、第一區及一第二區，其中該第一區較該第二區 見以便一點膠機容易進出一晶片和一基底之間的一間 隙且其中該第一區鄰近該基底，該第二區直接設置於 該第一區的上表面之上，在該晶片與該加強材的第二區 之間產生一凹口。 9. 如申請專利範圍第8項所述之加強材，更包括一接 著物用來連接該加強材的第一區及第二區。 10· —種半導體的封裝方法，包含： 提供一基底’具有一正面及一背面； 將一導熱加強材固定在該基底的正面上，該加強材 具有一第一區及一第二區，該第一區鄰近該基底的正 面該第一區直接設置於該第一區的上表面之上，且該 第一區較該第二區寬’因此產生一凹口在該加強材中； 將半導體晶片固定在該基底的正面上’並且在該 加強材之内； °5〇3-A31843TWF2/Kelly 13 13313.83 第95129894號申請專利範圍修正本 修正日期：99.5.26 片盥：：：加強材的凹口注入-清潔溶劑在該半導體晶 片與該基底之間的間隙中； 形成複數個錫球在該基底的背面上；以及 、.將一散熱片固定在該加強材的第二區上，以封 ，導體日日片’其中該凹口在該散熱片與該加強材的^二 之間，且該凹口介於該半導體晶片與該加強 材的第二區之間。 * Π.如申請專利範圍第1〇項所述之半導體的封裝方 在兮半==由該加強材中的凹口塗佈一底部填膠材料 在a體晶片及該基底之間的間隙中。 =申請專利範圍第10項所述之半導體的封裝方 出該間隙該加強材第—區的尺寸能狗讓—轉機容易進 ^^請專_圍第12項所述之半導體的封農方 声^ k加強材第—區的寬度約為m 度約為 5〇〜1500/am。 π =如申請專利範圍第u項所述之半導體的封褒方 ，、中該加強材第二區的寬度 、 度約為50〜 1500“m。 灣〇#m’兩 法，^*^!?Γ第10項所述之半導體的封裳方 ^導體曰日片以錫鉛凸塊接合至該基底。 法，更利範圍第10項所述之半導體的封震方 第二區二:接著物用來連接該加強材的第-區和 0503-A31843TWF2/KeIK J4 1331383 第95129894號申請專利範圍修正本 修正日期：99.5.26 17.如申請專利範圍第16項所述之半導體的封裝方 法，其中該接著物用環氧樹脂來連接該加強材的第一區 及第二區。 0503-A3I843TWF2/Kelly 15
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