TWI328231B - Methods and device for improved program-verify operations in non-volatile memories - Google Patents
Methods and device for improved program-verify operations in non-volatile memories Download PDFInfo
- Publication number
- TWI328231B TWI328231B TW095150107A TW95150107A TWI328231B TW I328231 B TWI328231 B TW I328231B TW 095150107 A TW095150107 A TW 095150107A TW 95150107 A TW95150107 A TW 95150107A TW I328231 B TWI328231 B TW I328231B
- Authority
- TW
- Taiwan
- Prior art keywords
- memory
- group
- memory cells
- threshold voltage
- stylized
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/323,577 US7310255B2 (en) | 2005-12-29 | 2005-12-29 | Non-volatile memory with improved program-verify operations |
US11/323,596 US7224614B1 (en) | 2005-12-29 | 2005-12-29 | Methods for improved program-verify operations in non-volatile memories |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746151A TW200746151A (en) | 2007-12-16 |
TWI328231B true TWI328231B (en) | 2010-08-01 |
Family
ID=38110643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095150107A TWI328231B (en) | 2005-12-29 | 2006-12-29 | Methods and device for improved program-verify operations in non-volatile memories |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1966802A2 (fr) |
JP (1) | JP4638544B2 (fr) |
KR (1) | KR101317625B1 (fr) |
TW (1) | TWI328231B (fr) |
WO (1) | WO2007076512A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI514394B (zh) * | 2013-08-27 | 2015-12-21 | Toshiba Kk | Semiconductor memory device and its control method |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7606076B2 (en) * | 2007-04-05 | 2009-10-20 | Sandisk Corporation | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
ITRM20080114A1 (it) * | 2008-02-29 | 2009-09-01 | Micron Technology Inc | Compensazione della perdita di carica durante la programmazione di un dispositivo di memoria. |
JP5172555B2 (ja) | 2008-09-08 | 2013-03-27 | 株式会社東芝 | 半導体記憶装置 |
JP5193830B2 (ja) | 2008-12-03 | 2013-05-08 | 株式会社東芝 | 不揮発性半導体メモリ |
KR101005117B1 (ko) * | 2009-01-23 | 2011-01-04 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 동작 방법 |
JP5039079B2 (ja) * | 2009-03-23 | 2012-10-03 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101554727B1 (ko) | 2009-07-13 | 2015-09-23 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8223556B2 (en) | 2009-11-25 | 2012-07-17 | Sandisk Technologies Inc. | Programming non-volatile memory with a reduced number of verify operations |
KR101633018B1 (ko) | 2009-12-28 | 2016-06-24 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
KR101656384B1 (ko) * | 2010-06-10 | 2016-09-12 | 삼성전자주식회사 | 불휘발성 메모리 장치의 데이터 기입 방법 |
JP2011258289A (ja) | 2010-06-10 | 2011-12-22 | Toshiba Corp | メモリセルの閾値検出方法 |
JP5380506B2 (ja) | 2011-09-22 | 2014-01-08 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2014053060A (ja) | 2012-09-07 | 2014-03-20 | Toshiba Corp | 半導体記憶装置及びその制御方法 |
JP2014063551A (ja) | 2012-09-21 | 2014-04-10 | Toshiba Corp | 半導体記憶装置 |
CN110892482B (zh) | 2019-10-12 | 2021-01-29 | 长江存储科技有限责任公司 | 对存储器件进行编程的方法及相关存储器件 |
US11594293B2 (en) | 2020-07-10 | 2023-02-28 | Samsung Electronics Co., Ltd. | Memory device with conditional skip of verify operation during write and operating method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3679544B2 (ja) * | 1997-03-28 | 2005-08-03 | 三洋電機株式会社 | 不揮発性半導体メモリ装置 |
JP3977799B2 (ja) * | 2003-12-09 | 2007-09-19 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7136304B2 (en) * | 2002-10-29 | 2006-11-14 | Saifun Semiconductor Ltd | Method, system and circuit for programming a non-volatile memory array |
US7068539B2 (en) * | 2004-01-27 | 2006-06-27 | Sandisk Corporation | Charge packet metering for coarse/fine programming of non-volatile memory |
US7139198B2 (en) * | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
US7170793B2 (en) * | 2004-04-13 | 2007-01-30 | Sandisk Corporation | Programming inhibit for non-volatile memory |
US7023733B2 (en) | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
ITRM20050310A1 (it) * | 2005-06-15 | 2006-12-16 | Micron Technology Inc | Convergenza a programmazione selettiva lenta in un dispositivo di memoria flash. |
-
2006
- 2006-12-27 KR KR1020087015676A patent/KR101317625B1/ko active IP Right Grant
- 2006-12-27 EP EP06848897A patent/EP1966802A2/fr not_active Withdrawn
- 2006-12-27 JP JP2008548835A patent/JP4638544B2/ja not_active Expired - Fee Related
- 2006-12-27 WO PCT/US2006/062627 patent/WO2007076512A2/fr active Application Filing
- 2006-12-29 TW TW095150107A patent/TWI328231B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI514394B (zh) * | 2013-08-27 | 2015-12-21 | Toshiba Kk | Semiconductor memory device and its control method |
Also Published As
Publication number | Publication date |
---|---|
WO2007076512A3 (fr) | 2007-08-16 |
KR101317625B1 (ko) | 2013-10-10 |
EP1966802A2 (fr) | 2008-09-10 |
WO2007076512A2 (fr) | 2007-07-05 |
JP4638544B2 (ja) | 2011-02-23 |
TW200746151A (en) | 2007-12-16 |
JP2009522707A (ja) | 2009-06-11 |
KR20080096645A (ko) | 2008-10-31 |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |