TWI324361B - - Google Patents

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Publication number
TWI324361B
TWI324361B TW092123978A TW92123978A TWI324361B TW I324361 B TWI324361 B TW I324361B TW 092123978 A TW092123978 A TW 092123978A TW 92123978 A TW92123978 A TW 92123978A TW I324361 B TWI324361 B TW I324361B
Authority
TW
Taiwan
Prior art keywords
plasma
substrate
processed
processing method
electrostatic chuck
Prior art date
Application number
TW092123978A
Other languages
English (en)
Chinese (zh)
Other versions
TW200410332A (en
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200410332A publication Critical patent/TW200410332A/zh
Application granted granted Critical
Publication of TWI324361B publication Critical patent/TWI324361B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
TW092123978A 2002-08-30 2003-08-29 Method and device for plasma treatment TW200410332A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002256096A JP4322484B2 (ja) 2002-08-30 2002-08-30 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200410332A TW200410332A (en) 2004-06-16
TWI324361B true TWI324361B (ja) 2010-05-01

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123978A TW200410332A (en) 2002-08-30 2003-08-29 Method and device for plasma treatment

Country Status (6)

Country Link
JP (1) JP4322484B2 (ja)
KR (1) KR100782621B1 (ja)
CN (1) CN100414672C (ja)
AU (1) AU2003261790A1 (ja)
TW (1) TW200410332A (ja)
WO (1) WO2004021427A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI506668B (zh) * 2010-09-16 2015-11-01 Tokyo Electron Ltd Plasma processing device and plasma processing method

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
CN101740340B (zh) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及半导体加工设备
JP2010199310A (ja) * 2009-02-25 2010-09-09 Sharp Corp プラズマエッチング方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (ja) * 2012-09-26 2014-04-03 シャープ株式会社 基板処理装置および基板処理方法、半導体装置の製造方法
WO2015129719A1 (ja) * 2014-02-28 2015-09-03 株式会社 アルバック プラズマエッチング方法、プラズマエッチング装置、プラズマ処理方法、およびプラズマ処理装置
JP6558901B2 (ja) 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP6595334B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
TWI697940B (zh) * 2016-02-26 2020-07-01 美商得昇科技股份有限公司 使用ｉｃｐ剝離劑的分層植入型光阻剝離製程
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
US20230173557A1 (en) * 2020-03-17 2023-06-08 Tokyo Electron Limited Cleaning method and method of manufacturing semiconductor device
CN113154610A (zh) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 一种具有温度调节功能的空气净化器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JP3907256B2 (ja) * 1997-01-10 2007-04-18 芝浦メカトロニクス株式会社 真空処理装置の静電チャック装置
TW484187B (en) * 2000-02-14 2002-04-21 Tokyo Electron Ltd Apparatus and method for plasma treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI506668B (zh) * 2010-09-16 2015-11-01 Tokyo Electron Ltd Plasma processing device and plasma processing method

Also Published As

Publication number Publication date
CN1679148A (zh) 2005-10-05
KR100782621B1 (ko) 2007-12-06
KR20050058464A (ko) 2005-06-16
JP4322484B2 (ja) 2009-09-02
WO2004021427A1 (ja) 2004-03-11
CN100414672C (zh) 2008-08-27
JP2004095909A (ja) 2004-03-25
AU2003261790A1 (en) 2004-03-19
TW200410332A (en) 2004-06-16

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MM4A Annulment or lapse of patent due to non-payment of fees