TWI320572B - Circuit and method for controlling self-refresh cycle - Google Patents

Circuit and method for controlling self-refresh cycle

Info

Publication number
TWI320572B
TWI320572B TW096100127A TW96100127A TWI320572B TW I320572 B TWI320572 B TW I320572B TW 096100127 A TW096100127 A TW 096100127A TW 96100127 A TW96100127 A TW 96100127A TW I320572 B TWI320572 B TW I320572B
Authority
TW
Taiwan
Prior art keywords
circuit
refresh cycle
controlling self
self
controlling
Prior art date
Application number
TW096100127A
Other languages
English (en)
Other versions
TW200744094A (en
Inventor
Kwi Dong Kim
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Publication of TW200744094A publication Critical patent/TW200744094A/zh
Application granted granted Critical
Publication of TWI320572B publication Critical patent/TWI320572B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40626—Temperature related aspects of refresh operations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4061—Calibration or ate or cycle tuning
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4068—Voltage or leakage in refresh operations

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW096100127A 2006-05-22 2007-01-03 Circuit and method for controlling self-refresh cycle TWI320572B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060045861A KR100800145B1 (ko) 2006-05-22 2006-05-22 셀프 리프레쉬 주기 제어 회로 및 그 방법

Publications (2)

Publication Number Publication Date
TW200744094A TW200744094A (en) 2007-12-01
TWI320572B true TWI320572B (en) 2010-02-11

Family

ID=38711832

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096100127A TWI320572B (en) 2006-05-22 2007-01-03 Circuit and method for controlling self-refresh cycle

Country Status (3)

Country Link
US (2) US7619943B2 (zh)
KR (1) KR100800145B1 (zh)
TW (1) TWI320572B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035281A (zh) * 2011-09-29 2013-04-10 复旦大学 一种基于单元漏电检测的温度控制自刷新方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9159396B2 (en) * 2011-06-30 2015-10-13 Lattice Semiconductor Corporation Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices
US9245604B2 (en) 2013-05-08 2016-01-26 International Business Machines Corporation Prioritizing refreshes in a memory device
US9224450B2 (en) 2013-05-08 2015-12-29 International Business Machines Corporation Reference voltage modification in a memory device
KR20160099983A (ko) * 2015-02-13 2016-08-23 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
KR20160138616A (ko) 2015-05-26 2016-12-06 에스케이하이닉스 주식회사 셀프 리프레쉬 장치
JP6084318B1 (ja) * 2016-02-22 2017-02-22 力晶科技股▲ふん▼有限公司 揮発性半導体記憶装置のリフレッシュ制御回路及び方法、並びに揮発性半導体記憶装置
US10147475B1 (en) 2017-05-09 2018-12-04 Micron Technology, Inc. Refresh in memory based on a set margin
US10644004B2 (en) * 2018-02-13 2020-05-05 Advanced Micro Devices, Inc. Utilizing capacitors integrated with memory devices for charge detection to determine DRAM refresh
KR102552875B1 (ko) 2018-12-03 2023-07-10 삼성전자주식회사 동적 반도체 메모리 장치 및 이를 구비하는 메모리 시스템
CN114726192B (zh) * 2022-06-08 2022-09-30 北京奎芯集成电路设计有限公司 电位维持器和芯片组件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5365487A (en) * 1992-03-24 1994-11-15 Texas Instruments Incorporated DRAM power management with self-refresh
JPH06282985A (ja) * 1993-03-30 1994-10-07 Hitachi Ltd ダイナミック型ｒａｍ
TW301750B (zh) 1995-02-08 1997-04-01 Matsushita Electric Ind Co Ltd
JP3710845B2 (ja) * 1995-06-21 2005-10-26 株式会社ルネサステクノロジ 半導体記憶装置
JP3535963B2 (ja) * 1997-02-17 2004-06-07 シャープ株式会社 半導体記憶装置
KR19990040680U (ko) * 1998-05-06 1999-12-06 김영환 반도체 메모리의 셀프 리프레쉬 제어회로
KR100527552B1 (ko) * 1999-04-03 2005-11-09 주식회사 하이닉스반도체 반도체 메모리장치
US6483764B2 (en) 2001-01-16 2002-11-19 International Business Machines Corporation Dynamic DRAM refresh rate adjustment based on cell leakage monitoring
KR100744598B1 (ko) * 2001-06-29 2007-08-01 매그나칩 반도체 유한회사 리프레쉬 회로 및 방법 및 이를 이용하는 반도체 메모리장치
KR100640780B1 (ko) * 2003-12-29 2006-10-31 주식회사 하이닉스반도체 반도체 메모리 소자
JP4478974B2 (ja) * 2004-01-30 2010-06-09 エルピーダメモリ株式会社 半導体記憶装置及びそのリフレッシュ制御方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035281A (zh) * 2011-09-29 2013-04-10 复旦大学 一种基于单元漏电检测的温度控制自刷新方法
CN103035281B (zh) * 2011-09-29 2016-01-13 复旦大学 一种基于单元漏电检测的温度控制自刷新方法

Also Published As

Publication number Publication date
US20090323449A1 (en) 2009-12-31
US8111574B2 (en) 2012-02-07
US7619943B2 (en) 2009-11-17
TW200744094A (en) 2007-12-01
KR100800145B1 (ko) 2008-02-01
KR20070112669A (ko) 2007-11-27
US20070268767A1 (en) 2007-11-22

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