TWI319590B - Indirectly heated cathode ion source - Google Patents

Indirectly heated cathode ion source

Info

Publication number
TWI319590B
TWI319590B TW092113939A TW92113939A TWI319590B TW I319590 B TWI319590 B TW I319590B TW 092113939 A TW092113939 A TW 092113939A TW 92113939 A TW92113939 A TW 92113939A TW I319590 B TWI319590 B TW I319590B
Authority
TW
Taiwan
Prior art keywords
ion source
indirectly heated
heated cathode
cathode ion
indirectly
Prior art date
Application number
TW092113939A
Other languages
English (en)
Other versions
TW200307304A (en
Inventor
Peter E Maciejowski
C Olson Joseph
Shengwu Chang
Bjorn O Pedersen
Leo V Klos
Daniel Distaso
Curt D Bergeron
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200307304A publication Critical patent/TW200307304A/zh
Application granted granted Critical
Publication of TWI319590B publication Critical patent/TWI319590B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/26—Supports for the emissive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
TW092113939A 2002-05-23 2003-05-23 Indirectly heated cathode ion source TWI319590B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/154,232 US7138768B2 (en) 2002-05-23 2002-05-23 Indirectly heated cathode ion source

Publications (2)

Publication Number Publication Date
TW200307304A TW200307304A (en) 2003-12-01
TWI319590B true TWI319590B (en) 2010-01-11

Family

ID=29548827

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098119339A TWI391975B (zh) 2002-05-23 2003-05-23 間接加熱的陰極離子源
TW092113939A TWI319590B (en) 2002-05-23 2003-05-23 Indirectly heated cathode ion source

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW098119339A TWI391975B (zh) 2002-05-23 2003-05-23 間接加熱的陰極離子源

Country Status (6)

Country Link
US (1) US7138768B2 (zh)
EP (1) EP1506559A1 (zh)
JP (2) JP4817656B2 (zh)
KR (1) KR100944291B1 (zh)
TW (2) TWI391975B (zh)
WO (1) WO2003100806A1 (zh)

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US7838850B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. External cathode ion source
JP4820038B2 (ja) * 1999-12-13 2011-11-24 セメクイップ， インコーポレイテッド イオン注入イオン源、システム、および方法
GB0505856D0 (en) * 2005-03-22 2005-04-27 Applied Materials Inc Cathode and counter-cathode arrangement in an ion source
US7491947B2 (en) * 2005-08-17 2009-02-17 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of indirectly heated cathode ion source
US20100112795A1 (en) * 2005-08-30 2010-05-06 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
KR101297917B1 (ko) * 2005-08-30 2013-08-27 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 대안적인 불화 붕소 전구체를 이용한 붕소 이온 주입 방법,및 주입을 위한 대형 수소화붕소의 형성 방법
KR100688573B1 (ko) * 2005-09-16 2007-03-02 삼성전자주식회사 이온소스부, 이를 구비하는 이온주입장치 및 그 변경 방법
WO2008020855A1 (en) * 2006-08-18 2008-02-21 Varian Semiconductor Equipment Associates, Inc. Technique for improving performance and extending lifetime of inductively heated cathode ion sources
US8072149B2 (en) * 2008-03-31 2011-12-06 Varian Semiconductor Equipment Associates, Inc. Unbalanced ion source
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8138071B2 (en) * 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) * 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
WO2011056515A2 (en) 2009-10-27 2011-05-12 Advanced Technology Materials, Inc. Ion implantation system and method
TWI689467B (zh) 2010-02-26 2020-04-01 美商恩特葛瑞斯股份有限公司 用以增進離子植入系統中之離子源的壽命及性能之方法與設備
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
JP5318809B2 (ja) * 2010-03-29 2013-10-16 日本電子株式会社 電子銃
CN103201824B (zh) 2010-08-30 2016-09-07 恩特格里斯公司 由固体材料制备化合物或其中间体以及使用该化合物和中间体的设备和方法
KR101149826B1 (ko) 2011-01-11 2012-05-24 (주)제이씨이노텍 반도체 제조장비의 소스 헤드
US9076625B2 (en) 2011-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Indirectly heated cathode cartridge design
DE102011112759A1 (de) * 2011-09-08 2013-03-14 Oerlikon Trading Ag, Trübbach Plasmaquelle
TWI583442B (zh) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 Ｂ２ｆ４之製造程序
KR20200098716A (ko) 2012-02-14 2020-08-20 엔테그리스, 아이엔씨. 주입 빔 및 소스 수명 성능 개선을 위한 탄소 도판트 기체 및 동축류
US8933630B2 (en) 2012-12-19 2015-01-13 Taiwan Semiconductor Manufacturing Co., Ltd. Arc chamber with multiple cathodes for an ion source
US11062906B2 (en) 2013-08-16 2021-07-13 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
WO2015094381A1 (en) 2013-12-20 2015-06-25 White Nicholas R A ribbon beam ion source of arbitrary length
JP6177123B2 (ja) * 2013-12-25 2017-08-09 住友重機械イオンテクノロジー株式会社 支持構造およびそれを用いたイオン発生装置
WO2016036512A1 (en) 2014-09-01 2016-03-10 Entegris, Inc. Phosphorus or arsenic ion implantation utilizing enhanced source techniques
US9502207B1 (en) 2015-08-26 2016-11-22 Axcelis Technologies, Inc. Cam actuated filament clamp
US10217600B1 (en) * 2017-10-19 2019-02-26 Ion Technology Solutions, Llc Indirectly heated cathode ion source assembly
US10818469B2 (en) * 2018-12-13 2020-10-27 Applied Materials, Inc. Cylindrical shaped arc chamber for indirectly heated cathode ion source

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FR1053508A (fr) 1952-04-07 1954-02-03 Csf Perfectionnements aux cathodes thermioniques
US3621324A (en) 1968-11-05 1971-11-16 Westinghouse Electric Corp High-power cathode
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US5497006A (en) 1994-11-15 1996-03-05 Eaton Corporation Ion generating source for use in an ion implanter
US5811823A (en) 1996-02-16 1998-09-22 Eaton Corporation Control mechanisms for dosimetry control in ion implantation systems
US5703372A (en) * 1996-10-30 1997-12-30 Eaton Corporation Endcap for indirectly heated cathode of ion source
US5763890A (en) * 1996-10-30 1998-06-09 Eaton Corporation Cathode mounting for ion source with indirectly heated cathode
JP3349642B2 (ja) * 1996-12-26 2002-11-25 株式会社日立製作所 イオンビーム加工装置の点検方法
KR100274599B1 (ko) * 1997-04-14 2000-12-15 윤종용 반도체 이온주입설비의 패러데이 바이어스전압 공급 체크장치
JP3899161B2 (ja) * 1997-06-30 2007-03-28 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン発生装置
GB2327513B (en) 1997-07-16 2001-10-24 Applied Materials Inc Power control apparatus for an ion source having an indirectly heated cathode
US6288403B1 (en) * 1999-10-11 2001-09-11 Axcelis Technologies, Inc. Decaborane ionizer
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US6777686B2 (en) * 2000-05-17 2004-08-17 Varian Semiconductor Equipment Associates, Inc. Control system for indirectly heated cathode ion source
US7276847B2 (en) * 2000-05-17 2007-10-02 Varian Semiconductor Equipment Associates, Inc. Cathode assembly for indirectly heated cathode ion source
US6348764B1 (en) * 2000-08-17 2002-02-19 Taiwan Semiconductor Manufacturing Company, Ltd Indirect hot cathode (IHC) ion source

Also Published As

Publication number Publication date
TW201001477A (en) 2010-01-01
JP2010192454A (ja) 2010-09-02
TW200307304A (en) 2003-12-01
KR100944291B1 (ko) 2010-02-24
US20030218428A1 (en) 2003-11-27
TWI391975B (zh) 2013-04-01
JP4817656B2 (ja) 2011-11-16
KR20040106580A (ko) 2004-12-17
WO2003100806A9 (en) 2004-03-04
US7138768B2 (en) 2006-11-21
EP1506559A1 (en) 2005-02-16
JP2005527952A (ja) 2005-09-15
WO2003100806A1 (en) 2003-12-04

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