131715&8pif.d〇c 九、發明說明： 【發明所屬之技術領域】 本發明係關於半導體加工用之黏著片。又本發明係關 ^吏用4加1用黏著片之半導體的加工方法。更且係關於 由該半導體加工方法所得之半導體晶片。 本發明之半導體加工用黏著片係有用於在分割 (dicing )半導體晶圓等之元件小片時，為固定該半導體 晶片等之被切割物所使用的切湘黏著片，或為各個檢拾 jpick up)所切割之該被切割物所使用之半導體檢拾用黏 ，片。通常從切割製程至檢拾製程以同一黏著片進行為居 夕之關係，半導體加工用黏著片係有用於包含此等用途之 半導體加工用黏著片。 人’丰發明之半導體加工用黏著片係可使用於矽半導 體加工用黏著片、化合物半導體加工用黏著片、半導體套 裝^package)加工用黏著片等外，也可使用為玻璃加工用 黏者片。 【先前技術】 習知之以矽、鎵（Ga)、砷等為材料的半導體晶圓， 係以大徑之狀態製造後，以切割為元件小片，更移於接合 (mount)製程。此時，半導體晶圓係以貼附黏著片加以 保持之狀態施行切割製程、清洗製程、延伸（expand)制 程、檢拾製程、接合製程之各製程。上述黏著片係一般^ 用在塑膠薄膜（plastiefilm)之紐±形成黏著劑層者。 在上述切割製程，通常係由一面回轉一面移動之圓刀 131715f^u8pif doc 進行切割’此時為保持半導體晶圓之目的貼附半導體加工 =片;;Γ’在接續之檢拾製程，從貼附== 为面側，使用稱為針且（dl、 1 導體晶片提高1G〜1_請而’面使切割之半 夹面之㈣杰可吸附半導體晶片側 ί以從:^广)等的治具將半導體晶片更再拉 上以攸黏者片將晶片拉剝之方法。 f上=拾製程之剝離機理（me— ’係大概如 Ϊ導::片;Γ導體晶片提上10〜__，以產生 ΪΓ二部之剝離。然而，由接續之吸附夾頭之拉 ^外周收__基狀反轉加錢行，最後使半 完全剝離加以分離。在此檢拾製程，為 二ί二==力的，-般所使用 照日本，著劑（參 了疋近年來，半導體元件有變键夕姐&. 之半導體元件’雖献在使用上.f '、向’在社化 導體加工用黏著片線硬化型黏著劑之半 導體曰片盥逢# 半導體晶片時，雖然以半 ㈣轉力也料導體晶片以追 、土材之形狀產生變形。其結果 邊部之剝離，產生不能進行檢拾產生曰曰片週 【發明内容】 ' 者，系為解決如上述之隨伴於習知技術的問題點 者叫供在薄型化之半導體晶片也具有優良檢拾性能之 半導體加工用黏著片為目的。 又本發明係提供使用該半導體加工用黏著片之一種半 導體加工方法為目的。更且係提供由該半導體加工方法 得之半導體晶片為目的。 / 本發明者等為達成上述目的以銳意檢討結果，發現以131715 & 8pif.d〇c IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to an adhesive sheet for semiconductor processing. Further, the present invention relates to a method of processing a semiconductor using 4 plus 1 adhesive sheets. Further, it relates to a semiconductor wafer obtained by the semiconductor processing method. The adhesive sheet for semiconductor processing of the present invention is used for fixing a cut piece of a semiconductor wafer or the like when dicing a small piece of a semiconductor wafer or the like, or for picking up each jpick up The semiconductor pick-up adhesive sheet used for the cut object to be cut. Generally, the bonding process to the cleaning process is carried out in the same adhesive sheet, and the adhesive sheet for semiconductor processing is used for a semiconductor processing adhesive sheet for such applications. The adhesive sheet for semiconductor processing of the invention can be used for an adhesive sheet for semiconductor processing, an adhesive sheet for processing a compound semiconductor, a semiconductor package, an adhesive sheet for processing, or the like, and can also be used as an adhesive sheet for glass processing. . [Prior Art] A semiconductor wafer made of germanium, gallium (Ga), arsenic or the like is manufactured in a state of a large diameter and then cut into small pieces and moved to a mount process. At this time, the semiconductor wafer is subjected to a cutting process, a cleaning process, an expansion process, a pick-up process, and a bonding process in a state in which the adhesive sheet is attached and held. The above adhesive sheet is generally used in the plastie film to form an adhesive layer. In the above cutting process, the cutting process is usually performed by a circular knife 131715f^u8pif doc which is moved by one side of rotation. At this time, the semiconductor processing is performed for the purpose of holding the semiconductor wafer; the film is processed in the subsequent pick-up process. Attached == to the face side, using a so-called needle and (dl, 1 conductor wafer to increase 1G~1_ please and 'face to cut the half of the facet (4) Jie can adsorb the semiconductor wafer side ί from: ^ Guang), etc. The jig pulls the semiconductor wafer further to remove the wafer by the adhesive sheet. f on the = pick-up process of the stripping mechanism (me - 'system is roughly as follows:: sheet; Γ conductor wafer is put on 10~__ to produce the peeling of the two parts. However, by the subsequent adsorption chuck pull ^ outer circumference Receiving __ base reversal plus money, and finally separating the semi-complete stripping. In this process, the process is two ounces == force, and the general use of Japan, the agent (in recent years, The semiconductor element has a semiconductor element that is used in the case of a semiconductor device, although it is used in the semiconductor wafer of the adhesive chip hardening type adhesive for processing the social conductive conductor. In the half (four) rotation force, the conductor wafer is also deformed in the shape of the chasing or the soil material. As a result, the peeling of the edge portion causes the pick-up to be produced, and the film is produced. The object of the prior art is to provide a semiconductor processing adhesive sheet having a good pick-up performance in a thinned semiconductor wafer. The present invention is also directed to a semiconductor processing method using the semiconductor processing adhesive sheet. More The semiconductor wafer is obtained by the semiconductor processing method. / The present inventors have made an objective review of the results for the above purpose, and found that
下所示之半導體加JL用黏著片以致完成本發明。即本發明 係如以下所述。 X ^為解決上述課題，關於本發明之半導體加工用黏著片 係在基材薄膜（film)之至少一面具有黏著劑層之半導體 加工用黏著片，其特徵在於，上述基材薄膜係含有密度 〇.915g/cm3以下之低密度聚乙烯（p〇lyethylene)。 山又 在上述構成，上述基材薄膜中之密度〇 915g/cm3以下 的低密度聚乙烯之含有量係以2〇重量％以上為宜。 又，在上述構成，上述基材薄膜之在23〇C之拉伸彈性 係數係以lOOMPa以下為宜。 又，在上述構成，上述低密度聚乙烯係以控制支鏈 (side chain)分枝所成之直鏈（normai也也）狀低密度聚 乙稀為宜。 又’在上述構成’上述低密度聚乙烯係以使用金屬茂 (metallocene)催化劑加以聚合為宜。 又’在上述構成’黏著劑層係以放射線硬化型黏著劑 加以形成為宜。 為解決上述課題，關於本發明之半導體加工方法，其 特徵在於具有使用上述半導體加工用黏著片，將半導體晶 i8pif.doc 圓加以切割之製程及/或檢拾之製程。 又，在上述方法，半導體晶圓之厚度係以2〇〇//m以 下為宜。 為解決上述課題，關於本發明之半導體晶片，其特徵 在於’係由上述之半導體加工方法所取得。 上达本發明之半導體加工用黏著片的基材薄膜係使用 密度0.915g/em3以下之低密度聚乙關_，具有柔軟 性’對於半導體晶圓雖然、使用厚度為綱㈣以下之薄型 者的場合，也卓越於半導體晶片在檢拾製程之突上（向上 突起）時的薄膜變形性。並且隨伴於基材薄膜之伸長，具 有其應力增大之優點’可容易進行半導體晶片之剝離，^ 有優越之檢拾性能。 〃 1文用S知之半導體加 Μ r '〜哎""一卬制》有/1興+發明之半 導體加工用黏著片的場合’將半導體晶片之剝離機構依據 圖面加以說明’圖i〜圖3係表示在檢拾餘之針 的黏著片與半導體晶片之舉動。 ’、 ^ 圖2係ί示對於半導體晶片（W)較厚剛性高者，適 用白知之，著片（Α )，由針具（Ν)使半導體晶片㈤ 突上之狀態。因半導體晶片（W)之剛性高的關係，如以 放射線硬化等其黏著力充分低降時， 藉线行半導體晶片(w)之突上，僅)十(： 以變形之關係:生起半導體晶片（w)之剝離。 用習導體晶片(w)較薄剛性低者，適 ^ )，由針具（N)將半導體晶片（w) if.docThe semiconductor and JL adhesive sheets shown below are used to complete the present invention. That is, the present invention is as follows. In order to solve the above problems, the adhesive sheet for semiconductor processing of the present invention is an adhesive sheet for semiconductor processing having an adhesive layer on at least one side of a base film, wherein the base film contains a density 〇 Low density polyethylene (p〇lyethylene) of 915 g/cm3 or less. In the above configuration, the content of the low-density polyethylene having a density 〇 915 g/cm 3 or less in the base film is preferably 2% by weight or more. Further, in the above configuration, the tensile modulus of elasticity of the base film at 23 ° C is preferably 100 MPa or less. Further, in the above configuration, the low-density polyethylene is preferably a linear (normai) low-density polyethylene which is formed by controlling a side chain branch. Further, in the above configuration, the low-density polyethylene is preferably polymerized using a metallocene catalyst. Further, it is preferable that the adhesive layer is formed of a radiation curable adhesive. In order to solve the above problems, the semiconductor processing method of the present invention is characterized in that it has a process of cutting and cutting a semiconductor crystal i8pif.doc using the above-mentioned adhesive sheet for semiconductor processing. Further, in the above method, the thickness of the semiconductor wafer is preferably 2 Å/m or less. In order to solve the above problems, the semiconductor wafer of the present invention is characterized in that it is obtained by the above-described semiconductor processing method. The base film of the adhesive sheet for semiconductor processing of the present invention is a low-density polyethylene having a density of 0.915 g/cm 3 or less, and has flexibility. For a semiconductor wafer, a thinner type having a thickness of less than or equal to (four) is used. In this case, it is also superior to the film deformability when the semiconductor wafer is protruded (upwardly protruding) on the pick-up process. Further, with the elongation of the base film, there is an advantage that the stress is increased, and the peeling of the semiconductor wafer can be easily performed, and the pickup performance is excellent. 〃 1 用 S 知 半导体 半导体 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ~ Figure 3 shows the behavior of the adhesive sheet and the semiconductor wafer in the pickup needle. Fig. 2 shows a state in which the semiconductor wafer (W) is thicker and more rigid, and it is suitable for the film (Α), and the semiconductor wafer (f) is protruded by the needle (Ν). Due to the high rigidity of the semiconductor wafer (W), if the adhesion is sufficiently low, such as by radiation hardening, the semiconductor wafer (w) is protruded by the line, only ten (: in the relationship of deformation: the semiconductor wafer is generated) (w) stripping. Using the conductor wafer (w) is thinner and less rigid, suitable for ^), the semiconductor wafer (w) from the needle (N) if.doc
I31715TP 犬上之狀態。半導體晶片（w)之剛性柄 放射線硬化等其減力低降，以半導體:/係’雖然以 片（A，）間之黏接力未完全消失之狀態（W)與黏著 追隨於黏著；UA，）加以變形之關係，晶片（W) 之剝離不能檢拾。 起切體晶片（W) 圖1係表示雖然在半導體晶片（w) 合，適用本發明之黏著片（A)時，也乂"岡1m低之場 明之黏著片⑷係使用密度極低卓越於°士發 聚乙烯的基材薄膜之關係’由針具(N)將；‘之低密度 突上時黏著片⑷之變形較大，半以” 於針具形狀，’以放射線硬化等黏接“分低:日)追= 不能追隨於黏著片（A)之半導體晶片 -降寺由 始剝離，由此可加以檢拾。片（W)的反撥力開 入 本發明之半導體加工用黏著片的基材薄膜 在231之初期彈性係數為1〇〇Mpa以下者為宜專盆理由^ =如I。如上所述’基㈣·有充分之錄性，知 二之大上時，以某程度追隨於針具，有必要局部變形( 具柔軟性之目標為lOOMPa。 又丄由針具之突上後，雖由夾頭吸附進行最後剝離， ，一别述之柔軟性相反需要基材薄膜之反撥性。而且， =等一連之動作係在300m sec[毫（milli)秒]程度的極短 時間進行之關係，對於反撥性在高速變形下之基材薄膜的 黏彈性舉動有所影響。 以下，依據圖4及圖5，對於黏著片之基材薄膜，使 1317155 14418pif.doc 用上述初期彈性係數為lOOMPa以下者之場合加以說明。 圖4及圖5係表示使用黏著片（a，a，）’在檢拾製程由吸 附夾頭（C)之半導體晶片（w)的最後剝離狀態之說明 圖。 圖4係表示使用本發明之半導體加工用黏著片的場合 之5兒明圖。基材薄膜’係使用密度0.915g/cm3以下之低密 度聚乙稀’並且上述初期彈性係數為l〇〇MPa以下。在圖 4，隨吸附夾頭（C) 一面向上吸附半導體晶片（W) 一面 上昇，由黏著片（A)之黏著劑層與半導體晶片（w)間 之黏接力也使黏著片（A)拉向上方。此時基材薄膜之反 札充刀，其反撥力比黏著片（A)之黏著劑層與半導體晶 片（w)間的黏接力大時，由其反撥，隨使吸附夾頭（c) 向上方拉上，以自然地黏著片（A)從半導體晶片 剝離。 ^ 一方面，圖5係表示對於黏著片（A，）之基材薄膜， 雖係上述初期彈性係數為1〇〇MPa以下之極柔軟者，未使 用密度，5g/em3下之絲度聚乙_場合找明圖。關 於基材薄臈’例如可舉以使用乙稀（ethylene) ·乙酸乙稀 酯（vinylacetate)共聚物（c〇p〇lymer)為材料者。在圖$， 檢拾初期雖亦產生由針具突上之剝離。但是，在其次之由 吸附夾頭（C)的剝離階段，基材薄膜之反撥力^充分， 比該反撥力黏著片（Α，）之黏著劑層與半導體晶 係’黏著片(Α，)伸延不能順利剝離。 私果，在基材賴大伸延後半導體W (W) _之關 18pif,d〇c H例如，剝離後之黏著片（A，）由返回之振動等產生未 剝離之周邊晶片與其他晶片干擾等的問題。 為讓本發明之上述和其他目的、特徵和優點能更明顯 下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 在以下財關化⑽明本發明之轉體加工用黏 者片。圖6係半導體加工用黏著片之斷面圖。 係在基材薄膜⑴之一面具有黏著劑層(2)。黏 者刮層（2)係在基材薄膜⑴之至少—面具有即可。在 圖=以例示僅在基材_⑴之—面具有歸劑層⑺ m:半^體加工用黏著片係可使用帶狀、卷繞狀者。 黏著劑層⑺設分離層（separatG1·)⑶。尚且，在圖3 至圖4 ’半導體加工用黏著片⑷係以半導體晶片 側配置黏著劑層（2)。 、 上所述在薄型化半導體晶片之檢拾製程，對於半 3加工祕著片’需要具有錄性以使容易生起由初期 針”之變形剝離，與反撥力以使順利生起接續之吸附失頭 離此等柔軟性與反撥力係為相反之特性。對於滿足 在種要求特=具有錄性之紐細⑴，在本發明，係 使用在針具突上之比較（與由吸附夾頭_階段比）低速 變形領域富於柔軟性，並且在由吸附夹頭剝離之高速變形 領域下卓越於彈性的材料。 對於基材溥臈（1)以表示有關黏彈性特性之材料係使I31715TP The state of the dog. The rigid handle of the semiconductor wafer (w), such as radiation hardening, has a low reduction in force, and the semiconductor: /" is in a state in which the adhesion between the sheets (A,) does not completely disappear (W) and adhesion follows the adhesion; UA, The deformation of the wafer (W) can not be removed. The cut-off wafer (W) Fig. 1 shows that when the adhesive sheet (A) of the present invention is applied to the semiconductor wafer (w), the adhesive sheet (4) of the present invention is extremely low in density. The relationship between the base film of the geisha polyethylene is 'by the needle (N); the lower density of the adhesive sheet (4) is more deformed, and the thickness of the adhesive sheet (4) is larger than that of the needle shape, and is hardened by radiation hardening. The "small low: day" chase = the semiconductor wafer that cannot follow the adhesive sheet (A) - the temple is peeled off from the beginning, and thus can be picked up. The back-draw force of the sheet (W) is applied to the base film of the adhesive sheet for semiconductor processing of the present invention. The modulus of elasticity at the initial stage of 231 is 1 〇〇Mpa or less. As mentioned above, 'base (four)· has sufficient recordability. When the second is known, it is necessary to follow the needle with a certain degree. It is necessary to deform locally (the target of softness is lOOMPa. Although the final peeling is carried out by the chuck adsorption, the softness of the other is required to reverse the dialing property of the substrate film. Moreover, the action of the equal-time is performed in a very short time of 300 msec [milliseconds]. The relationship between the backlash and the viscoelastic behavior of the base film under high-speed deformation is affected. Hereinafter, according to FIG. 4 and FIG. 5, for the base film of the adhesive sheet, the initial elastic modulus of 1317155 14418pif.doc is In the case of a vacuum of less than 100 MPa, Fig. 4 and Fig. 5 are explanatory views showing the final peeling state of the semiconductor wafer (w) by the adsorption chuck (C) in the cleaning process using the adhesive sheet (a, a,). Fig. 4 is a view showing a fifth embodiment of the use of the adhesive sheet for semiconductor processing of the present invention. The base film 'is a low density polyethylene having a density of 0.915 g/cm 3 or less and the initial elastic modulus is l 〇〇 MPa. Below. In Figure 4, follow the suction The chuck (C) is raised upward on one side of the semiconductor wafer (W), and the adhesive force between the adhesive layer of the adhesive sheet (A) and the semiconductor wafer (w) also pulls the adhesive sheet (A) upward. When the reciprocating force of the material film is larger than the adhesion between the adhesive layer of the adhesive sheet (A) and the semiconductor wafer (w), the reverse pull is performed, and the adsorption chuck (c) is pulled upward. The film is peeled off from the semiconductor wafer by the natural adhesive sheet (A). On the one hand, Fig. 5 shows that the base film for the adhesive sheet (A,) is extremely soft with an initial elastic modulus of 1 〇〇 MPa or less. , the density is not used, and the silkiness under 5g/em3 is found in the case of the polystyrene. For the substrate thinner, for example, ethylene/vinylacetate copolymer (c〇p) can be used. 〇lymer) is the material. In the figure $, the peeling of the needle is also generated at the initial stage of pick-up. However, in the second stage of the peeling stage of the chuck (C), the back-draw force of the base film is sufficient. Adhesive layer and semiconductor crystal 'adhesive sheet (Α,)) than the anti-pick adhesive sheet (Α,) The extension cannot be smoothly peeled off. The private fruit, after the substrate is stretched, the semiconductor W (W) _ closes 18pif, d〇c H, for example, the peeled adhesive sheet (A,) is caused by the returning vibration or the like to produce an unpeeled periphery. The above and other objects, features, and advantages of the present invention will become more apparent from the description of the preferred embodiments of the invention. The following is a sectional view of the adhesive sheet for the processing of the present invention. Fig. 6 is a cross-sectional view of the adhesive sheet for semiconductor processing. The adhesive film layer (2) is provided on one side of the base film (1). (2) It may be at least the surface of the base film (1). In the figure, it is exemplified that the reductant layer (7) is provided only on the surface of the substrate _(1). m: The adhesive sheet for the half-body processing can be used in the form of a strip or a coil. The adhesive layer (7) is provided with a separation layer (separatG1·) (3). Further, in Fig. 3 to Fig. 4', the adhesive sheet (4) for semiconductor processing is provided with an adhesive layer (2) on the side of the semiconductor wafer. As described above, in the cleaning process of the thinned semiconductor wafer, for the half 3 processing secret film, it is required to have the recording property so that the deformation of the initial needle is easy to be peeled off, and the reverse force is applied to make the adsorption failure of the succeeding generation. The softness and the reciprocating force are the opposite characteristics. For the purpose of meeting the requirements of the species = the characteristic of the recording (1), in the present invention, the comparison is made on the needle protrusion (with the chuck by the adsorption chuck _ stage The material in which the low-speed deformation field is rich in flexibility and is superior to elasticity in the field of high-speed deformation by the adsorption chuck. The substrate 溥臈(1) is used to indicate the material of the viscoelastic property.
II 用具有密度〇.915g/cm3以下的低密度聚乙烯。低密度聚乙 稀之岔度係以0.910 g/cm3以下較好，更好為q 905 g/cm3 以下。低密度聚乙烯之密度超過〇·9ΐ5 g/cm3之場合，係缺 乏於柔軟性為不好。尚且，低密度聚乙烯係通常，使用於 薄膜（film)之場合，為使用密度超過〇 915g/cm3者。 密度0.915 g/cm3以下之低密度聚乙烯一般係使乙烯 與α-烯烴（olefme)加以共聚合而得。藉由使“_烯烴加以 共聚合，使聚乙烯之結晶性低降，低降其密度，附與柔軟 性。對於烯烴係可舉丁烯（buten〇 ]、3_甲基^烯 (methylpentene) -1、4-甲基戊烯-1、己烷（hexene)-卜 辛烯（octane) -1等。烯烴共聚合比如滿足上述密度條 件時雖係無特別加以限制係以低密度聚乙烯之通常6〇重 量％以下，較好為10〜4〇重量％。 分子量保持為比較均一，更卫 分子間之糾纏的凝集。由上对 鍵狀低松度聚乙稀係外觀好， 上述低密度聚乙烯係轉近直鏈狀低密度聚乙稀為 宜。因此’上述低密度聚乙烯係啸制支鏈分枝之直鏈狀 低密度聚乙烯為宜。更且以制金職聚合催化劑所作成 之直鏈狀低密度聚乙烯為宜。以通常之低密度聚乙稀的場 合’使密度為G.915gW灯之健度的場合，分子量分 布以過度㈣之情縣多。其結果，祕祕之差異等高 /刀子侧之分子彼此容易生起凝集，產生如凝膠（gd)化物 之凝集物，外跡好。藉岐用金韻聚合催化劑，可將 更且以直鏈狀可防止由不需要之 由上述金屬茂聚合催化劑所得之直 觀好’此並非為直鏈狀低密度聚乙 12 ipif.doc 烯限定於由金屬茂聚合催化劑加以取得。 尚且，對於乙烯系共聚物，其共聚單體（m〇n〇mer) 之主成分以含α-稀之非稀烴單體者為不好。例如，乙稀 -乙酸乙烯（vinylacetate)共聚物、乙烯_ (甲基）丙烯酸 【(methyl)acrylic acid]共聚物、乙烯·（曱基）丙烯酸酯 【(methyl)acrylester】共聚物等之場合雖然可得柔軟性，其高 速變形日$之反撥力為不充分。此係認為如上所述其黏彈性 特性攸通常之乙稀的黏彈性特性加以大變化。 基材薄膜（1)係可使密度〇.9i5g/cm3以下之低密度 聚乙稀與其他可摻合之樹脂加以混合使用。樹脂混合物係 有使上述低密度聚乙稀之聚合物（P〇lymer )鏈加以低降結 晶之效果的關係，使混合之他方聚合物之結晶性加以低 降，可得與上述同樣的效果。在上述樹脂混合物，密度 〇.915g/Cm3以下之低密度聚乙烯係可為非主成分，對 混合比只要密度〇,915g/cm3以下之低密度聚乙烯為樹脂混 合物全體之20重量％以上時，可得上述效果.上述混合物 比係以25重量％以上者為宜。對於與上述低密度聚乙烯可 能混合之樹脂’係與低密度聚乙烯完全相溶，加以變化其 密度者’例如高密度聚乙烯等之各種聚乙烯係為不好。^ 月t*此δ之树爿日係為上述者以外時雖並不特別加以限制，例 如可舉’聚丙烯（p〇ly-pr〇Pylene)、苯乙烯（卿代狀）系 熱可塑性彈性體（elastomer)等。 ” 基材薄膜（1)係可依壓出法等之通常法加以製作。其 厚度係通常為10〜300/zm，以30〜200//m程度為宜。其j才 13 13 1 71 5]Sfl8pir.doc 或多層薄膜之任何者。但，最後 以；2夕⑴之在23。。的拉伸彈性係數係以lOOMPa 且。夕層細侧如可制其他軟㈣難料，由 if出Ϊ，乾式叠層（dryIaminate)法等之慣用薄膜疊層 法加以製造。又，所得之基材薄膜⑴係按照需要施以一 軸或一軸之延伸處理。在施以延伸處理之場合，基材薄膜 ⑴之彈性係數也使留在1G()MPa以下之範圍為宜。基材 薄膜（1)之上述拉伸彈性係數係以80MPa以下為好，更 好為麵Pa以下。尚且’上述㈣餘 lOMPa以上。 如此以製膜之基材薄膜（1)係按照需要可施以消光處 理、電暈放電處理（corona dischange treatment)、塗底漆 (primer)處理等之慣用的物理或化學處理。 -小 對於黏著劑層（2)，係可使用一般公知或慣用之黏著 劑。此等黏著劑雖係並非有任何限制，例如可使用橡膠系、 丙晞基（acryl)系、石夕系、聚乙烯基醋（polyvinyl ester) 系等之各種黏著劑。 對於上述黏著劑係以丙烯基系為宜。丙烯基系黏著劑 之基礎（base)聚合物的丙烯基系聚合物係通常使用（甲 基）丙烯酸炫基酯[(methyl)acrylic acid alkyl】之聚合物或共 聚合性單體的共聚合物。對於丙稀基系聚合物之主單體係 以其均聚物（homopolymer)之玻璃轉移溫度為20°C以下 的（曱基）丙烯酸烧基醋為宜。 對於（甲基）丙烯酸烷基酯的烷基係例如可舉曱基、 I31715X，doc 乙基（ethyl)、丁基（butyl)、2-乙基己基（2-ethylhexyl)、 辛基（octyl)、異壬基（isononyl)等。又，對於上述共聚 合性單體係可舉（曱基）丙烯酸之經炫基酯（hydroxyalkyl ester ) ’（例如，經乙基醋（hydroxyethyl ester)、經丁基西旨 (hydroxybutyl ester)、輕己基醋(hydroxyhexyl ester)等）、（曱 基）丙稀酸甘油基酯（glycidyl ester)、（甲基）丙婦酸、衣 康酸（itaconic acid )、馬來酐（maleic anhydride )、（甲基） 丙烯酰胺【（methyl)acrylicamide】、（曱基）丙稀酸N —羥曱 基酰胺（N-hydoxymethyl amide)、（曱基）丙烯酸烷基胺 基烷基酯[(methyl)alcrylic alkyl amino alkyl]、（例如，二曱 基胺基乙基異丁稀酸g旨（dimethyl amino ethyl methacrylate)、t- 丁 基胺基乙基異 丁稀酸 g旨（t_butyl amino ethyl methocrylate)等）、乙酸乙烯酯、苯乙烯（styrene)、 苯稀腈（acrylonitrile)等。 又，對於黏著劑係可使用由紫外線、電子線等加以硬 化之放射線硬化型黏著劑或加熱發泡型黏著劑。更且，也 可為切割•切割接合兼用之黏著劑。在本發明，係以使用 放射線硬化型黏著劑，特別以紫外線硬化型黏著劑為宜。 尚且，對於黏著劑在使用放射線硬化型黏著劑之場合，在 切割製权之4或後以放射線照射黏著劑之關係上述基材薄 膜（1)係以具有充分之放射線透過性為宜。 放射線硬化型黏著劑，係例如含有上述基礎聚合物（丙 烯基系聚合物）與放射線硬化成分^放射線硬化成分係在 分子中具有碳-碳雙重結合，可由游離基共聚合作用 15 iif.doc (radical copolymerigation)特別無限制使用單體，低聚體 (oligomer)或聚合物。對於放射硬化成分係例如可舉三 經曱基丙烧三（曱基）丙晞酸S旨（trimethylol propantri(methyl)acrylate)、五丁四醇三（甲基）丙烯酸酯 (pentaerythritoltri(methyl)acrylate)、四乙二醇二（甲基） 丙烯酸酯（tetraethylene glycoldi (methyl) acrylate)、1，6_ 己二醇二（甲基）丙烯酸I旨（1，6-hexanediole (methyl)acrylate )、新戊基二醇二（甲基）丙烯酸酯 (neopentyl glycol di(methyl)acrylate)、二五四醇六（曱基） 丙稀酸酯（dipentaerythritol hexa(methyl)acrylate)等之（甲 基）丙稀酸與多價酒精的酯（ester)化物；酯丙稀酸酯低 聚體（ester acrylate oligomer) ; 2-丙烯基-二-3-丁烯基氰尿 酸酯（2-propenyl-di-3-butenylcyanurate)、2-經乙基雙（2- 丙烯酸經乙基）異氰尿酸醋（2-hydroxy ethyl bis (2-acryloxy ethyl)isocyanurate)、三（2-甲基丙烯羥乙基）異氰尿酸酯 (tris(2-methacryloxy ethyl)isocyanurate)等之異氰尿酸酯 或異氰尿酸酯化合物等。 又’放射線硬化型黏著劑對於基礎聚合物（丙烯基系 聚合物）也可使用在聚合物支鏈具有碳-碳雙重結合之放射 線硬化型聚合物。此種場合’並無需要添加上述放射線硬 化成分。 以紫外線加以硬化放射線硬化型黏著劑之場合，係需 要光聚合開始劑。對於光聚合開始劑係例如可舉苯曱酰甲 基醚（benzoylmethylether)、苯偶姻丙基烷基醚（benz〇in 16 1317135wpif.d〇c propyl ether )、苯偶姻異丁基炫基醚（benzoin isobutyl ether) 等之苯偶姻烧基醚（benzoin dlkyl ether )類；聯苯酰 (benzil)、苯偶姻（benzoin)、二苯曱酉同（benzophenone)、 d-罗里基壞己基苯顯J (a-hydroxy cyclohexyl phenylketone)等 之芳香族曱酮（ketone)類；聯苯酰二甲基縮酮（benzil dimethyl ketal)等之芳香族縮酮（ketal)類；聚乙烯二苯 曱酮（polyvinyl benzophenone );氯噻吨酮 (chlorothioxantone )、十二烷基噻吨酮（dodecyl thioxantone)、二甲基噻吨g同（dimethyl thioxantone)、二乙 基噻吨_ (diethyl thioxantone)等之噻吨酮（thi〇xant〇ne) 類等。 上述黏著劑係可更再按照需要含有架橋劑、黏著附與 劑、充填劑、老化防止劑、著色劑等之慣用添加劑。對於 架橋劑係例如可舉含有聚異氰酸酯（polyis〇cyanate)化合 物、二聚氰胺樹脂（melamine resin)、尿素樹脂、氮丙咬 (aziridine )化合物、環氧樹脂（ep〇xy代如）、酐 (anhydride)、聚胺（p〇iyamine)、含有羥基（carb〇xyl) 之聚合物等。 本發明之半導體加工用黏著片係例如，在基材薄膜（1) 之表面，塗布黏著劑經乾燥後（按照需要經加熱架橋）加 以形成黏著劑層（2)，按照需要在此黏著劑層（2)之表面 藉由貼合分離層（3)可加以製造。又，另外，也可採用在 分離層（3)形成黏著劑層⑵後，將此貼合於基材薄片 (1)之方法等。 17 1317154 8pif.doc 黏著劑層（2)之厚度係由黏著劑之種類，或切割之切 割深度可適宜加以決定。具體上，係為“200# m，以3〜沁 程度為宜。 分離層（3)係為標籤加工，或為使黏著劑層平滑之目 的，按照需要而設。對於分離層（3)之構成材料，可舉紙、 聚乙烯（p〇lyethytene)、聚丙烯（p〇lypr〇pylene)、聚對笨 一曱酸乙酯（polyethylene terephthalate)等之合成樹脂薄 膜等。在分離層（3)之表面，為提高從黏著劑層（2)之 剝離性，按照需要可施加矽處理、長鏈烷基（alkyl)處理、 氟處理等之剝離處理。又，按照為提高剛性等之目的，也 可施行一轴或二轴之延伸處理或其他之以塑膠薄膜等的疊 層。分離層（3)之厚度通常係為10〜200//m，以25〜1〇〇 程度為宜。 本發明之半導體加工用黏著片係使用於半導體晶圓之 切吾彳製私、檢拾製程。切割製程、檢拾製程係可採用通常 方法。本發明之半導體加工用黏著片係也可適宜使用於半 導體晶圓之厚度為200#m以下的薄型化者。半導體晶圓 之厚度在100以下，更且在5〇#m以下之場合，也可 適宜加以使用。 【實施例】 以下’雖然依據實施例將本發明加以詳細說明，本發 明並非限定於此等實施例。 " 實施例1(基材薄膜之製作） 將三井化學（股份公司）製之「商品名：工求y 2 — 18 131715“ pif.doc SP 054〇」供給於了概如地出成形機（設定溫度赋） 加以製膜’以製作厚度動㈣之基材薄膜。工到二— SP-0540係由金屬茂催化劑加以聚合之直鏈狀低密度聚 乙烯，其密度為0.903g/cm3。 (黏著劑之調整） 將丙稀酸甲基80重量部及丙稀酸2-經乙基（acryii acid2 —hydroxyethyle) 20 重量部在三烯（tdene) 8〇 重量 部及乙腈（acetonitrile) 20重量部之混合溶液中由常法加 以共聚合’以得含有重量平均分子量5〇萬之丙烯基（acryl) 系共聚合物的溶液。其次，對於丙烯酸2 —羥乙基（acrylic acid2 —hydoxyethyl) 1克分子（m〇le)部添加以2—曱基 丙稀酰羥乙稀異氰酸|旨（2_ methaCryl〇Xyethylene isocyanate)成為0.9克分子部，在空氣環境下以5〇〇c加以 12小時攪拌反應，以得放射線硬化型聚合物溶液。在此聚 合溶液100重量部添加二五丁四醇六丙烯酸酯 (dipentaerythritol hexaacrylate )(商品名「力十予 7 卜、 DPHA」’日本化藥(股份公司）製）1〇〇重量部、光聚合開 始劑（商品名「彳A力丰二7 184」，chiba · specialty · chemicals公司製）5重量部、聚異氰酸酷（p〇iyiSOCyanate) 化合物（商品名「：？ 口孝一卜L」，日本聚胺基曱酸乙脂 (polyurethane)(股份公司）製）5重量部，加以調製丙烯基系 紫外線硬化型黏著劑溶液。 (黏著片之製作） 將上述所調製之黏著劑溶液，塗布於在上述所得之基 19 1317m 材薄膜的電暈（咖na)處理面上，以8叱經1G分鐘加熱 架橋’形成厚度20#m之紫外線硬化型黏著劑層。在其次 將分離層貼合於該黏著劑層面加以製作紫外線硬化型黏著 片。 實施例2 在貫施例1 ’對於基材薄膜之材料，使用三菱化學（股 份公司）製之「力—孝力KF273」以外，係依照實施例ι 之方法加以製作紫外線硬化型黏著片。力—才儿KF273係 由金屬茂雜劑加以聚合之直鏈狀低密度聚乙烯，其密卢 為 〇.913g/cm3。 又 實施例3 在實施例1，對於基材薄膜材料使用將三菱化學（股 伤公司）製之「七」70重量部與三菱化學（股份公司） 製之「力一才wl/ KF261」30重量部’以二軸混練壓出器加 以混合者以外係按照實施例i之方法加以製作紫外線硬化 型黏著片。七、予只係丙烯（piOpylene) 58重量％與乙基— 丙烯橡膠42重量％之混合物，其密度係為〇 88g/^m3:力 —氺^KF261係由金屬茂催化劑所聚合之直鏈狀低密度聚 乙烯，其密度係為0.898g/cm3。 比較例1 在實施例1，對於基材薄膜之材料’使用三井杜邦化 學（股份公司）製之「工八7 p—12〇5」以外係 按照實施例1之方法加以製作紫外線硬化型黏著片。工八 7 hy 々 X P-12G5 係乙基-⑽乙烯g旨（vinyiacetate) 13171¾^ 共聚合物，其密度為0.93g/cm3。 比較例2 在實施例1，對於基材薄膜之材料使用三井化學（股 份公司）製之「〜b卜七、y夕X 2〇22L」以外係按照實= 例1之方法加以製作紫外線硬化型黏著片。々小卜七'ν’ 只2022L係由齊格勤（Ziegler)催化劑所聚合之直鏈狀低 密度聚乙烯（polyethylene)，其密度係〇.92g/em3。 ' 比較例3 在實施例1 ’對於基材薄膜之材料使用三菱化學（股 春 份公司）製之「七今只」以外係按照實施例i 二 製作紫外線硬化型黏著片。 (評價試驗） 將實施例及比較例所得之黏著片由下述之方法加以評 價，將結果表示於表1。 (1) 基材薄膜之拉伸彈性係數 將製作之基材薄膜的拉伸彈性係數按照JIS Κ6921_2 加以測定。拉伸速度：200麵/min、夾頭間距離：50刪、 試樣寬度：lGmm。 (2) 檢拾試驗 將製作之黏著片裝設於厚度5〇#m之6英吋晶圓，以 7 mmx7 mm之尺寸進行切割後，照射紫外線使黏著劑層之黏 著力低降後’以芯片焊接器（die bonder)進行檢拾。 芯片焊接器：NEC機器製CPS-100 突上針：350/ζηιία5°χ〇.75ιηηι 21 13 1 7 1 SlS418pif.doc 突上量：300//m 由上述條件測試約30晶片之檢拾，加以評價檢拾量。 [表1】_ 基材薄膜 檢拾結果 材料密度 (g/cm3) 拉伸彈性 係數 _iMpa) 成功率 (成功數/30) _ ___ ----- 備註 實施例1 0.903 60 30/30 ------ 實施例2 0.913 85 28/30 •~~— 實施例3 0.898/0.88 95 26/30 ----— 比較例1 0.930 40 0/30 ---- 夾頭吸附脫離 比較例2 0.920 120 0/30 ------- 晶片破損、夹頭吸 附脫離 比較例3 0.88 200 0/30 --- 晶片破損、失頭吸 附脫離 從表1可知，在實施例之黏著片可確認以薄型晶片也 無問題能加以檢拾。II uses a low density polyethylene having a density of 915.915 g/cm3 or less. The low density polyethylene is preferably 0.910 g/cm3 or less, more preferably q 905 g/cm3 or less. When the density of the low-density polyethylene exceeds 〇·9ΐ5 g/cm3, the lack of flexibility is not good. Further, the low-density polyethylene is usually used in the case of a film, and is used in a density exceeding 915 915 g/cm 3 . The low-density polyethylene having a density of 0.915 g/cm3 or less is generally obtained by copolymerizing ethylene with an ?-olefin (olefme). By copolymerizing "the olefin", the crystallinity of the polyethylene is lowered, the density is lowered, and the flexibility is imparted. For the olefin system, butene, 3-methylpentene is mentioned. -1, 4-methylpentene-1, hexene-octane-1, etc. Olefin copolymerization, for example, when the above density conditions are satisfied, is not particularly limited to low density polyethylene. Usually, it is 6% by weight or less, preferably 10% by weight to 4% by weight. The molecular weight is kept relatively uniform, and the entanglement of the molecules is agglomerated. The upper layer has a good appearance of the low-density polyethylene, and the above low density It is preferred that the polyethylene is transferred to a linear low-density polyethylene, so that the low-density polyethylene is a linear low-density polyethylene which is branched and branched, and is preferably a gold-based polymerization catalyst. It is preferable to form a linear low-density polyethylene. In the case of a normal low-density polyethylene, when the density is a G.915gW lamp, the molecular weight distribution is excessive (four). The difference in the secret contour / the knives on the side of the knife are prone to agglutination, resulting in condensation Agglomerate (gd) agglomerate with good external appearance. By using a rhodium polymerization catalyst, it can be more linear and can prevent the visual effect obtained by the above metallocene polymerization catalyst from being unnecessary. The chain-like low-density poly(I) 12 ipif.doc ene is limited to be obtained by a metallocene polymerization catalyst. Moreover, for the ethylene-based copolymer, the main component of the comonomer (m〇n〇mer) contains α-dilute Difficult hydrocarbons are not good. For example, ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene(mercapto)acrylate [(methyl) In the case of a copolymer or the like, flexibility can be obtained, and the reverse force of the high-speed deformation day is insufficient. This is considered to have a large change in the viscoelastic property of the usual ethylene viscoelastic property as described above. The film (1) is a low-density polyethylene having a density of 99i5g/cm3 or less mixed with other blendable resins. The resin mixture is a polymer of the above low-density polyethylene (P〇lymer). ) chain with low drop crystallization effect The relationship between the fruits is such that the crystallinity of the mixed polymer is lowered, and the same effect as described above can be obtained. In the above resin mixture, the low density polyethylene having a density of 915 g/cm or less may be a non-principal component, When the mixing ratio is 20% by weight or more based on the total density of 915 g/cm 3 or less, the above effect can be obtained. The mixture ratio is preferably 25% by weight or more. The resin in which ethylene may be mixed is completely compatible with the low-density polyethylene, and it is not preferable to change the density of the polyethylene such as high-density polyethylene. ^月 t* The δ tree is not particularly limited as long as it is other than the above, and for example, 'polypropylene (p〇ly-pr〇Pylene), styrene (qing) is thermoplastic elastic Elastomer and the like. The base film (1) can be produced by a usual method such as extrusion. The thickness is usually 10 to 300 / zm, preferably 30 to 200 / / m. Its j is 13 13 1 71 5 ]Sfl8pir.doc or any of the multilayer films. However, in the end; 2 (1) at 23, the tensile modulus of elasticity is 100 MPa and the fine side of the layer can be made of other soft (four) unpredictable, by if Ϊ, a conventional dry film laminate method, etc., is produced by a conventional film lamination method. Further, the obtained base film (1) is subjected to extension treatment of one axis or one axis as required. The elastic modulus of (1) is preferably in the range of 1 G () MPa or less. The tensile modulus of the base film (1) is preferably 80 MPa or less, more preferably less than Pa. Further, the above (4) is 10 MPa. The substrate film (1) thus formed may be subjected to conventional physical or chemical treatment such as matting treatment, corona dischange treatment, primer treatment, etc. as needed. For the adhesive layer (2), generally known or conventional adhesives can be used. These adhesives are not limited at all, and for example, various adhesives such as rubber, acryl, stellite, and polyvinyl ester can be used. A propylene group is preferred. A propylene-based polymer of a base polymer of a propylene-based adhesive is usually a polymer or copolymerization of (meth)acrylic acid alkyl. Monomer copolymer. For the main system of the acryl-based polymer, it is preferred that the homopolymer has a glass transition temperature of 20 ° C or less (mercapto) acrylic acid vinegar. The alkyl group of the alkyl (meth) acrylate may, for example, be a mercapto group, I31715X, doc ethyl (ethyl), butyl (butyl), 2-ethylhexyl (2-ethylhexyl), octyl or the like. Further, for the above-mentioned copolymerizable single system, a hydroxyalkyl ester of (meth)acrylic acid (for example, hydroxyethyl ester, butyl butyl group) may be mentioned. Hydroxybutyl ester, hydroxyhexyl ester Et,) (glycidyl ester), (meth)propanoid acid, itaconic acid, maleic anhydride, (meth)acrylamide [( Methyl)acrylicamide, (N-hydoxymethyl amide), (methyl)alcrylic alkyl amino alkyl, (for example, Dimethylamino ethyl methacrylate, t-butyl amino ethyl methocrylate, t-butyl amino ethyl methocrylate, vinyl acetate, styrene Styrene), acrylonitrile, and the like. Further, as the adhesive, a radiation curable adhesive or a heat-foaming adhesive which is hardened by ultraviolet rays, electron wires or the like can be used. Moreover, it can also be used as an adhesive for cutting and cutting. In the present invention, it is preferred to use a radiation-curable adhesive, particularly an ultraviolet-curable adhesive. Further, in the case where a radiation-curable adhesive is used for the adhesive, it is preferable that the base film (1) has sufficient radiation permeability in order to irradiate the adhesive with radiation after 4 or after the cutting. A radiation hardening type adhesive, for example, comprising the above base polymer (propylene-based polymer) and a radiation hardening component, a radiation hardening component having a carbon-carbon double bond in a molecule, which can be copolymerized by a radical 15 iif.doc ( Radical copolymerigation) is particularly limited to the use of monomers, oligomers or polymers. Examples of the radiation hardening component include trimethylol propantri (methyl) acrylate and pentaerythritol tri (methyl) acrylate. ), tetraethylene glycoldi (methyl) acrylate, 1,6-hexanediole (methyl)acrylate, pentylene (meth)acrylic acid (neopentyl glycol di(methyl)acrylate), dipentaerythritol hexa(methyl)acrylate, etc. Ester with polyvalent alcohol; ester acrylate oligomer; 2-propenyl-di-3-butenyl cyanurate (2-propenyl-di-3- Butenylcyanurate), 2-hydroxy ethyl bis (2-acryloxy ethyl) isocyanurate, tris(2-methylpropoxy hydroxyethyl) isocyanurate Isocyanurate or isocyanurate compound such as tris(2-methacryloxy ethyl isocyanurate) . Further, the radiation hardening type adhesive may be a radiation curable polymer having a carbon-carbon double bond in the polymer branch for the base polymer (propylene-based polymer). In this case, it is not necessary to add the above-described radiation hardening component. When a radiation hardening type adhesive is cured by ultraviolet rays, a photopolymerization initiator is required. The photopolymerization initiator may, for example, be benzoylmethylether, benzoin propyl alkyl ether (benz〇in 16 1317135wpif.d〇c propyl ether ), benzoin isobutyl hexyl ether Benzoin (lbino) An aromatic ketone such as a-hydroxy cyclohexyl phenylketone or an aromatic ketal such as benzil dimethyl ketal; polyethylene diphenyl hydrazine; Polyvinyl benzophenone; chlorothioxantone, dodecyl thioxantone, dimethyl thioxantone, diethyl thioxantone, etc. Thioxanthene (thi〇xant〇ne) and the like. The above-mentioned adhesive may further contain a conventional additive such as a bridging agent, an adhesive, a filler, an anti-aging agent, a coloring agent or the like as needed. The bridging agent may, for example, be a polyisocyanate compound, a melamine resin, a urea resin, an aziridine compound, an epoxy resin (ep〇xy), an anhydride. (anhydride), polyamine (p〇iyamine), a polymer containing a hydroxyl group (carb〇xyl), and the like. The adhesive sheet for semiconductor processing of the present invention is formed, for example, on the surface of the base film (1), after the application of the adhesive is dried (heated bridging as needed) to form an adhesive layer (2), and the adhesive layer is provided as needed. The surface of (2) can be produced by laminating the separation layer (3). Further, a method in which the pressure-sensitive adhesive layer (2) is formed on the separation layer (3) and then bonded to the base sheet (1) may be employed. 17 1317154 8pif.doc The thickness of the adhesive layer (2) is determined by the type of adhesive or the cutting depth of the cut. Specifically, it is "200# m, preferably 3~沁. The separation layer (3) is label processing, or is designed to smooth the adhesive layer as needed. For the separation layer (3) The constituent material may be a synthetic resin film such as paper, polyethylene (p〇lyethytene), polypropylene (p〇lypr〇pylene), or polyethylene terephthalate, etc. in the separation layer (3) In order to improve the peeling property from the adhesive layer (2), a peeling treatment such as a hydrazine treatment, a long-chain alkyl treatment, or a fluorine treatment may be applied as needed, and also for the purpose of improving rigidity and the like. It is possible to perform one-axis or two-axis stretching treatment or other lamination of plastic film, etc. The thickness of the separation layer (3) is usually 10 to 200 / / m, preferably 25 to 1 〇〇. The adhesive sheet for semiconductor processing is used in the process of cutting and manufacturing the semiconductor wafer. The cutting process and the pick-up process can be carried out by a usual method. The adhesive film for semiconductor processing of the present invention can also be suitably used for a semiconductor. The thickness of the wafer is less than 200#m The thickness of the semiconductor wafer is 100 or less, and may be suitably used in the case of 5 Å or less. [Embodiment] Hereinafter, the present invention will be described in detail based on the embodiments, but the present invention is not limited thereto. Example 1 (Production of Substrate Film) The "Product Name: Job Request y 2 - 18 131715 "pif.doc SP 054〇" by Mitsui Chemicals Co., Ltd. was supplied to the example. The grounding molding machine (setting temperature setting) is used to form a film to produce a substrate film of thickness (4). Work to two - SP-0540 is a linear low-density polyethylene polymerized by a metallocene catalyst having a density of 0.903 g/cm3. (Adjustment of Adhesive) 80 parts by weight of methyl acrylate and 2 parts by weight of ethyl (acryii acid 2 - hydroxyethyle) in the weight of 8 parts of triene (tdene) and 20 parts by weight of acetonitrile The mixed solution of the parts was copolymerized by a usual method to obtain a solution of an acryl-based copolymer having a weight average molecular weight of 50,000. Next, for the acrylic acid 2-hydoxyethyl 1 gram (m〇le) portion was added with 2-mercaptopropoxy hydroxy hydroxy isocyanate | (2_ methaCryl 〇 Xyethylene isocyanate) was 0.9 The molar moiety was stirred at 5 ° C for 12 hours in an air atmosphere to obtain a radiation-curable polymer solution. Dipentaerythritol hexaacrylate (trade name "Liu Shiyu 7 Bu, DPHA", manufactured by Nippon Kayaku Co., Ltd.) was added to the weight of 100 parts of the polymerization solution. Starting agent (product name "彳A Lifeng 2 7 184", chiba · specialty · chemicals company) 5 parts by weight, polyisocyanate (p〇iyiSOCyanate) compound (product name ":? 口孝一卜L", A propylene-based ultraviolet curable adhesive solution was prepared by arranging 5 parts by weight of a polyurethane (manufactured by the company). (Production of Adhesive Sheet) The above-prepared adhesive solution was applied to a corona treatment surface of the above-mentioned base film of 19 1317 m, and was heated at 8 G for 1 G minutes to form a thickness of 20#. m UV curing adhesive layer. Next, a separation layer was attached to the adhesive layer to prepare an ultraviolet-curable adhesive sheet. (Example 2) An ultraviolet curable pressure-sensitive adhesive sheet was produced in the same manner as in Example 1 except that the material of the base film was used as the material of the base film by using Mitsui Chemicals Co., Ltd. KL273 is a linear low-density polyethylene polymerized by a metallocene agent, and its Milu is 913.913g/cm3. Further, in the first embodiment, in the first embodiment, the "seven" 70-weight portion manufactured by Mitsubishi Chemical Corporation (the company) and the "Li-Wai Wl/KF261" manufactured by Mitsubishi Chemical Corporation are used for the base film material. The ultraviolet curable adhesive sheet was produced in the same manner as in Example i except that the two-axis kneading extruder was used. 7. A mixture of only 58% by weight of piOpylene and 42% by weight of ethyl-propylene rubber, the density of which is 〇88g/^m3: force-氺KF261 is a linear chain polymerized by a metallocene catalyst. Low density polyethylene having a density of 0.898 g/cm3. Comparative Example 1 In Example 1, an ultraviolet curable adhesive sheet was produced in the same manner as in Example 1 except that the material of the base film was manufactured using Mitsui DuPont Chemical Co., Ltd., "Work 8:8-12". . Work 8 7 hy 々 X P-12G5 is an ethyl-(10) vinyl g vinyiacetate 131713⁄4^ copolymer having a density of 0.93 g/cm3. Comparative Example 2 In the first embodiment, the material of the base film was made into a UV-cured type according to the method of Example 1 except that "~b Bu7, Y Xi X 2 22L" manufactured by Mitsui Chemicals Co., Ltd. was used. Adhesive tablets. 々小卜七'ν' Only 2022L is a linear low-density polyethylene polymerized by a Ziegler catalyst having a density of 9292 g/em3. 'Comparative Example 3 In the example 1 ' An ultraviolet curable pressure-sensitive adhesive sheet was produced in accordance with Example i except that the material of the base film was used in the same manner as "Ji Jin only" manufactured by Mitsubishi Chemical Corporation. (Evaluation test) The adhesive sheets obtained in the examples and the comparative examples were evaluated by the following methods, and the results are shown in Table 1. (1) Tensile modulus of the base film The tensile modulus of the base film produced was measured in accordance with JIS Κ 6921_2. Stretching speed: 200 faces/min, distance between the chucks: 50 cut, sample width: lGmm. (2) Pick-up test The adhesive sheet produced was mounted on a 6-inch wafer with a thickness of 5 〇 #m, cut at a size of 7 mm x 7 mm, and irradiated with ultraviolet rays to lower the adhesion of the adhesive layer. A die bonder is used for picking up. Chip soldering machine: CPS-100 made by NEC machine: 350/ζηιία5°χ〇.75ιηηι 21 13 1 7 1 SlS418pif.doc Uplifting amount: 300//m Test about 30 wafers by the above conditions. Evaluate the pickup amount. [Table 1] _ Substrate film pick-up result Material density (g/cm3) Tensile modulus _iMpa) Success rate (success/30) _ ___ ----- Remarks Example 1 0.903 60 30/30 - ----- Example 2 0.913 85 28/30 •~~— Example 3 0.898/0.88 95 26/30 ----- Comparative Example 1 0.930 40 0/30 ---- Comparative Example of Chuck Adsorption Detachment 2 0.920 120 0/30 ------- Wafer damage, chuck adsorption and detachment Comparative Example 3 0.88 200 0/30 --- Wafer damage, head loss detachment As can be seen from Table 1, the adhesive sheet in the embodiment can be It is confirmed that the thin wafer can be picked up without any problem.
雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者’在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 X 【圖式簡單說明】 圖1係表示以針具將本發明之半導體加工用黏著片上 之半導體晶圓晶片加以突上狀態的斷面圖之一例。 22 131715518^ 、…圖2係表示以針具將習知之半導體加工用黏著片上之 半導體晶圓晶片加以突上狀態的斷面圖之一例。 圖3係表示以針具將習知之半導體加工用黏著片上之 半導體晶圓晶片加以突上狀態的斷關之一例。 圖係表示以吸附夾頭將本發明之半導體加工用黏著 片上之半導體晶圓晶片加以剝離狀態的斷面圖之一例。 圖5係表示以吸附夾頭將習知之半導體加工用黏 上之半導體晶圓晶片加以剝離狀態的斷面圖之一例 圖6係本發明之半導體加工用黏著片 例 〇 ^ 【主要元件符號說明】 A、 A’半導體加工用黏著片 W半導體晶片 N針具 C 吸附夾頭 1基材薄膜 2黏著劑層 3 分離層： 23While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. X [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing a state in which a semiconductor wafer on a semiconductor processing adhesive sheet of the present invention is protruded by a needle. 22 131715518^ Fig. 2 is a cross-sectional view showing a state in which a semiconductor wafer wafer on a conventional semiconductor processing adhesive sheet is protruded by a needle. Fig. 3 is a view showing an example of cutting off a semiconductor wafer wafer on a conventional semiconductor processing adhesive sheet by a needle. The figure shows an example of a cross-sectional view in which the semiconductor wafer wafer on the semiconductor processing adhesive sheet of the present invention is peeled off by an adsorption chuck. 5 is a cross-sectional view showing a state in which a semiconductor wafer to be bonded by a conventional semiconductor processing is peeled off by an adsorption chuck. FIG. 6 is an example of an adhesive sheet for semiconductor processing according to the present invention. A, A's semiconductor processing adhesive sheet W semiconductor wafer N needle C adsorption chuck 1 substrate film 2 adhesive layer 3 separation layer: 23