JP7377723B2 - Base film for dicing tape - Google Patents

Base film for dicing tape Download PDF

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JP7377723B2
JP7377723B2 JP2020007474A JP2020007474A JP7377723B2 JP 7377723 B2 JP7377723 B2 JP 7377723B2 JP 2020007474 A JP2020007474 A JP 2020007474A JP 2020007474 A JP2020007474 A JP 2020007474A JP 7377723 B2 JP7377723 B2 JP 7377723B2
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base film
mpa
dicing tape
density polyethylene
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JP2021114576A (en
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享之 石本
陽介 味口
仁美 小野
斉 杉山
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CI Takiron Corp
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Priority to KR1020227022565A priority patent/KR20220131228A/en
Priority to PCT/JP2020/041481 priority patent/WO2021149328A1/en
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04Homopolymers or copolymers of ethene
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04Homopolymers or copolymers of ethene
    • C08L23/06Polyethene
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    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/10Homopolymers or copolymers of propene
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/10Homopolymers or copolymers of propene
    • C08L23/12Polypropene
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/16Elastomeric ethene-propene or ethene-propene-diene copolymers, e.g. EPR and EPDM rubbers
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L55/00Compositions of homopolymers or copolymers, obtained by polymerisation reactions only involving carbon-to-carbon unsaturated bonds, not provided for in groups C08L23/00 - C08L53/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04Homopolymers or copolymers of ethene
    • C08J2323/06Polyethene
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2237Oxides; Hydroxides of metals of titanium
    • C08K2003/2241Titanium dioxide

Description

本発明は、ダイシングテープ用基材フィルム(以下、単に「基材フィルム」という場合がある。
)に関する。
The present invention relates to a base film for dicing tape (hereinafter sometimes simply referred to as "base film").
) regarding.

ICチップ等の半導体デバイスの製造方法としては、例えば、略円板形状の半導体ウエハ上に回路が形成されたウエハ回路を、ウエハ用のダイシングテープ上でダイシングにより分割し、個々の半導体デバイスを得る方法が広く用いられている。そして、ダイシング後は、例えば、ダイシングテープを引き延ばして半導体デバイス間に隙間を形成した(すなわち、エキスパンド)後、各半導体デバイスがロボット等でピックアップされる。 As a method for manufacturing semiconductor devices such as IC chips, for example, a wafer circuit in which a circuit is formed on a substantially disk-shaped semiconductor wafer is divided by dicing on a wafer dicing tape to obtain individual semiconductor devices. The method is widely used. After dicing, for example, the dicing tape is stretched to form gaps between the semiconductor devices (that is, expanded), and then each semiconductor device is picked up by a robot or the like.

ダイシングテープは、一般に、ウエハを固定する粘着層とポリオレフィン等を含有する基材フィルムとにより構成されている。この基材フィルムとしては、例えば、軟質のアクリル酸エステル系樹脂からなるコア層と半硬質ないし硬質のメタクリル酸エステル系樹脂からなるシェル層により構成された粒状の熱可塑性アクリル系樹脂から成形された層と、ポリエチレン系樹脂からなる層とが積層された基材フィルム(特許文献1参照)や、エチレン-メタクリル酸共重合体樹脂からなる外層と、エチレン-酢酸ビニル共重合体樹脂等からなる内層とが積層された基材フィルム(特許文献2参照)が提案されている。また、例えば、一方の面に粘着剤層を備え、ポリ塩化ビニル、ポリオレフィン、エチレン-酢酸ビニル共重合体、ポリエステル、ポリイミド、ポリアミド等により形成された基材フィルムであって、基材の、粘着剤層とは反対側の最外層表面のSUS430BA板に対する動的摩擦力が、温度23℃、湿度50%において10.0N未満であるものが提案されている。そして、この基材フィルムを備えたダイシングテープにおいては、縦方向および横方向に均一なエキスパンドが実現できると記載されている(特許文献3参照)。 A dicing tape is generally composed of an adhesive layer for fixing a wafer and a base film containing polyolefin or the like. This base film is, for example, made of a granular thermoplastic acrylic resin composed of a core layer made of a soft acrylic ester resin and a shell layer made of a semi-hard or hard methacrylic ester resin. and a layer made of a polyethylene resin (see Patent Document 1), an outer layer made of an ethylene-methacrylic acid copolymer resin, and an inner layer made of an ethylene-vinyl acetate copolymer resin, etc. A base film (see Patent Document 2) has been proposed in which the following are laminated. Further, for example, a base film having an adhesive layer on one side and formed of polyvinyl chloride, polyolefin, ethylene-vinyl acetate copolymer, polyester, polyimide, polyamide, etc. It has been proposed that the dynamic frictional force of the surface of the outermost layer opposite to the agent layer against the SUS430BA plate is less than 10.0 N at a temperature of 23° C. and a humidity of 50%. It is also described that a dicing tape equipped with this base film can achieve uniform expansion in the vertical and horizontal directions (see Patent Document 3).

特許第4643134号公報Patent No. 4643134 特許第5568428号公報Patent No. 5568428 特許第6211771号公報Patent No. 6211771

しかし、上記特許文献1~2に記載の基材フィルムでは、ポリエチレン系樹脂が使用されているが、融点が低い樹脂が使用されているため、高温で熱変形が生じ、耐熱性に乏しいという問題があった。 However, in the base films described in Patent Documents 1 and 2, polyethylene resin is used, but since a resin with a low melting point is used, thermal deformation occurs at high temperatures, resulting in poor heat resistance. was there.

また、上記特許文献3に記載の基材フィルムを備えたダイシングテープにおいては、樹脂の配向により、基材フィルムの機械軸(長手)方向(以下、「MD」という。)における応力が顕著に大きくなるため、基材フィルムの柔軟性(エキスパンド性)が不十分であるという問題があった。 Furthermore, in the dicing tape equipped with the base film described in Patent Document 3, the stress in the mechanical axis (longitudinal) direction (hereinafter referred to as "MD") of the base film is significantly large due to the orientation of the resin. Therefore, there was a problem that the flexibility (expandability) of the base film was insufficient.

そこで、本発明は、上記問題を鑑みてなされたものであり、耐熱性と柔軟性を両立することができるダイシングテープ用基材フィルムを提供することを目的とする。 Therefore, the present invention has been made in view of the above problems, and an object of the present invention is to provide a base film for dicing tape that can have both heat resistance and flexibility.

上記目的を達成するために、本発明のダイシングテープ用基材フィルムは、ポリエチレン系樹脂とポリプロピレン系樹脂とを含むダイシングテープ用基材フィルムであって、100℃における貯蔵弾性率が20MPa以上200MPa以下であり、110℃における貯蔵弾性率が10MPa以上170MPa以下であり、120℃における貯蔵弾性率が5MPa以上140MPa以下であり、MDにおける応力(100%伸長時)が5MPa以上20MPa未満であることを特徴とする。 In order to achieve the above object, the base film for dicing tape of the present invention is a base film for dicing tape containing a polyethylene resin and a polypropylene resin, and has a storage elastic modulus of 20 MPa or more and 200 MPa or less at 100°C. , the storage modulus at 110°C is 10 MPa or more and 170 MPa or less, the storage modulus at 120°C is 5 MPa or more and 140 MPa or less, and the stress in MD (at 100% elongation) is 5 MPa or more and less than 20 MPa. shall be.

本発明によれば、耐熱性と柔軟性に優れたダイシングテープ用基材フィルムを提供することが可能になる。 According to the present invention, it is possible to provide a base film for dicing tape that has excellent heat resistance and flexibility.

以下、本発明のダイシングテープ用基材フィルムについて具体的に説明する。なお、本発明は、以下の実施形態に限定されるものではなく、本発明の要旨を変更しない範囲において、適宜変更して適用することができる。 Hereinafter, the base film for dicing tape of the present invention will be specifically explained. Note that the present invention is not limited to the following embodiments, and can be modified and applied as appropriate without changing the gist of the present invention.

本発明の基材フィルムは、ポリエチレン系樹脂とポリプロピレン系樹脂とを含むダイシングテープ用基材フィルムである。より具体的には、本発明の基材フィルムは、例えば、ポリオレフィン系樹脂により形成されたフィルムであり、直鎖状低密度ポリエチレンと、エチレンと共重合したブロックポリプロピレン(以下、単に「ブロックポリプロピレン」という場合がある。)、またはプロピレンを単独で重合したホモポリプロピレン(以下、単に「ホモポリプロピレン」という場合がある。)を含んでいる。 The base film of the present invention is a base film for dicing tape containing a polyethylene resin and a polypropylene resin. More specifically, the base film of the present invention is a film formed of, for example, a polyolefin resin, and includes linear low-density polyethylene and block polypropylene copolymerized with ethylene (hereinafter simply "block polypropylene"). ), or homopolypropylene (hereinafter sometimes simply referred to as "homopolypropylene") obtained by polymerizing propylene alone.

<直鎖状低密度ポリエチレン>
直鎖状低密度ポリエチレンは、高密度ポリエチレンの直鎖構造に側鎖分岐を有している。そして、この側鎖分岐が短鎖であり、短鎖分岐数が少ないため、低密度ポリエチレンと比較して、結晶化度が高く、耐熱性に優れている。また、上述の側鎖分岐を有しているため、高密度ポリエチレンと比較して、結晶化度が高くなり過ぎず、柔軟性にも優れている。
<Linear low density polyethylene>
Linear low-density polyethylene has a side chain branch in the linear structure of high-density polyethylene. Since the side chain branches are short and the number of short chain branches is small, it has a higher degree of crystallinity and excellent heat resistance than low density polyethylene. Moreover, since it has the above-mentioned side chain branches, the degree of crystallinity does not become too high compared to high-density polyethylene, and it also has excellent flexibility.

なお、強度の点から、メタロセン系触媒またはチグラー触媒を用いて製造された直鎖状低密度ポリエチレンを使用してもよい。 Note that from the viewpoint of strength, linear low-density polyethylene produced using a metallocene catalyst or a Ziegler catalyst may be used.

また、直鎖状低密度ポリエチレンの密度は、0.910~0.919g/cmであることが好ましい。0.910g/cm以上の場合は、結晶化度が高くなるため、耐熱性を向上させることができ、0.919g/cm以下の場合は、結晶化度の過度な上昇を抑制して、基材フィルムの等方性(均一なエキスパンド性)を向上させることができる。 Further, the density of the linear low density polyethylene is preferably 0.910 to 0.919 g/cm 3 . If it is 0.910 g/cm 3 or more, the crystallinity will increase, so heat resistance can be improved, and if it is 0.919 g/cm 3 or less, the excessive increase in crystallinity will be suppressed. , it is possible to improve the isotropy (uniform expandability) of the base film.

また、直鎖状低密度ポリエチレンのメルトマスフローレート(MFR)は、1.0~6.0g/10分であることが好ましく、1.5~4.0g/10分がより好ましく、2.0~3.0g/10分がさらに好ましい。1.0g/10分以上の場合は、分子量が大き過ぎず、柔軟性と加工性を向上させることができるためであり、6.0g/10分以下の場合は、分子量が小さ過ぎず、耐熱性を向上させることができるためである。 Further, the melt mass flow rate (MFR) of the linear low density polyethylene is preferably 1.0 to 6.0 g/10 minutes, more preferably 1.5 to 4.0 g/10 minutes, and 2.0 g/10 minutes. ~3.0 g/10 minutes is more preferred. When it is 1.0 g/10 minutes or more, the molecular weight is not too large and flexibility and processability can be improved, and when it is 6.0 g/10 minutes or less, the molecular weight is not too small and heat resistance is improved. This is because it can improve sexual performance.

なお、上記のメルトマスフローレートは、JIS K7210:1999の規定に準拠して測定することで得られる。 Note that the above melt mass flow rate is obtained by measuring according to the regulations of JIS K7210:1999.

以上より、基材フィルムを形成する樹脂として、直鎖状低密度ポリエチレンを使用することにより、耐熱性と柔軟性、及び等方性に優れた基材フィルムを提供することができる。 As described above, by using linear low-density polyethylene as the resin forming the base film, it is possible to provide a base film with excellent heat resistance, flexibility, and isotropy.

<エチレンと共重合したブロックポリプロピレン、プロピレンを単独で重合したホモポリプロピレン>
ポリプロピレンとしては、一般に、プロピレンを単独で重合したホモポリプロピレン、エチレンとプロピレンとを共重合したランダムポリプロピレン、及びホモポリプロピレンを重合した後、ホモポリプロピレンの存在下において、エチレンとプロピレンとを共重合したブロックポリプロピレン(エチレンと共重合したブロックポリプロピレン)が挙げられる。
<Block polypropylene copolymerized with ethylene, homopolypropylene polymerized solely with propylene>
Polypropylene generally includes homopolypropylene obtained by polymerizing propylene alone, random polypropylene obtained by copolymerizing ethylene and propylene, and blocks obtained by polymerizing homopolypropylene and then copolymerizing ethylene and propylene in the presence of homopolypropylene. Examples include polypropylene (block polypropylene copolymerized with ethylene).

このうち、ランダムポリプロピレンは、立体規則性が低く、結晶化度が小さいため、柔軟性に優れるが、融点が低い。 Among these, random polypropylene has low stereoregularity and low crystallinity, so it has excellent flexibility but has a low melting point.

一方、ホモポリプロピレンは、立体規則性が高く、融点に寄与する結晶化度が大きいため、耐熱性に優れている。また、結晶化度が大きいため、剛性が大きいが、上述の直鎖状低密度ポリエチレンと混合することで、基材フィルムのエキスパンド性に寄与する柔軟性を得ることができる。 On the other hand, homopolypropylene has high stereoregularity and a high degree of crystallinity that contributes to the melting point, so it has excellent heat resistance. Further, since the degree of crystallinity is high, the rigidity is high, but by mixing it with the above-mentioned linear low-density polyethylene, flexibility that contributes to the expandability of the base film can be obtained.

また、エチレンと共重合したブロックポリプロピレンは、プロピレンとエチレンとにより構成されたブロックポリプロピレンであり、ホモポリプロピレン(海成分)中に、ポリエチレン(島成分)が分散した海島構造を有し、ポリエチレンの周囲にEPR相(ゴム相)を有している。従って、ホモポリプロピレンが有する耐熱性を保有しつつ、海島の境界線部にEPR相が形成されているため、柔軟性に優れている。 In addition, block polypropylene copolymerized with ethylene is a block polypropylene composed of propylene and ethylene, and has a sea-island structure in which polyethylene (island component) is dispersed in homopolypropylene (sea component). It has an EPR phase (rubber phase). Therefore, while retaining the heat resistance of homopolypropylene, it has excellent flexibility because the EPR phase is formed at the boundary between sea islands.

以上より、基材フィルムを形成する樹脂として、上述の直鎖状低密度ポリエチレンとともに、エチレンと共重合したブロックポリプロピレン、またはプロピレンを単独で重合したホモポリプロピレンを使用することにより、耐熱性と柔軟性、及び等方性に優れた基材フィルムを提供することができる。 Based on the above, using block polypropylene copolymerized with ethylene or homopolypropylene polymerized with propylene alone in addition to the above-mentioned linear low-density polyethylene as the resin forming the base film improves heat resistance and flexibility. , and a base film with excellent isotropy can be provided.

<基材フィルム>
本発明の基材フィルムにおいては、100℃における貯蔵弾性率(E’)が20MPa以上200MPa以下である。20MPa以上の場合は、加熱工程において基材フィルムの収縮を防止することができ、200MPa以下の場合は、基材フィルムの剛性の過度な上昇を抑制して、柔軟性(エキスパンド性)を向上させることができる。
<Base film>
In the base film of the present invention, the storage modulus (E') at 100° C. is 20 MPa or more and 200 MPa or less. When it is 20 MPa or more, shrinkage of the base film can be prevented in the heating process, and when it is 200 MPa or less, excessive increase in rigidity of the base film can be suppressed and flexibility (expandability) can be improved. be able to.

なお、100℃における貯蔵弾性率(E’)は、23~150MPaであることが好ましく、25~100MPaがより好ましい。 Note that the storage modulus (E') at 100° C. is preferably 23 to 150 MPa, more preferably 25 to 100 MPa.

また、上記「貯蔵弾性率」とは、JIS-K7244-4に準拠して、動的粘弾性測定装置を用いて測定されるものを言う。 Furthermore, the above-mentioned "storage modulus" refers to the one measured using a dynamic viscoelasticity measuring device in accordance with JIS-K7244-4.

また、同様に、本発明の基材フィルムにおいては、110℃における貯蔵弾性率(E’)が10MPa以上170MPa以下である。10MPa以上の場合は、加熱工程において基材フィルムの収縮を防止することができ、170MPa以下の場合は、基材フィルムの剛性の過度な上昇を抑制して、柔軟性(エキスパンド性)を向上させることができる。 Similarly, in the base film of the present invention, the storage modulus (E') at 110° C. is 10 MPa or more and 170 MPa or less. When it is 10 MPa or more, it is possible to prevent the base film from shrinking in the heating process, and when it is 170 MPa or less, it is possible to suppress an excessive increase in the rigidity of the base film and improve the flexibility (expandability). be able to.

なお、110℃における貯蔵弾性率(E’)は、15~120MPaであることが好ましく、20~80MPaがより好ましい。 Note that the storage modulus (E') at 110° C. is preferably 15 to 120 MPa, more preferably 20 to 80 MPa.

更に、本発明の基材フィルムにおいては、120℃における貯蔵弾性率(E’)が5MPa以上140MPa以下である。5MPa以上の場合は、加熱工程において基材フィルムの収縮を防止することができ、140MPa以下の場合は、基材フィルムの剛性の過度な上昇を抑制して、柔軟性(エキスパンド性)を向上させることができる。 Furthermore, the base film of the present invention has a storage modulus (E') at 120° C. of 5 MPa or more and 140 MPa or less. When it is 5 MPa or more, it is possible to prevent the base film from shrinking in the heating process, and when it is 140 MPa or less, it is possible to suppress an excessive increase in the rigidity of the base film and improve the flexibility (expandability). be able to.

なお、120℃における貯蔵弾性率(E’)は、10~90MPaであることが好ましく、15~40MPaがより好ましい。 Note that the storage modulus (E') at 120° C. is preferably 10 to 90 MPa, more preferably 15 to 40 MPa.

また、上記「貯蔵弾性率」とは、JIS-K7244-4に準拠して、動的粘弾性測定装置を用いて測定されるものを言う。 Furthermore, the above-mentioned "storage modulus" refers to the one measured using a dynamic viscoelasticity measuring device in accordance with JIS-K7244-4.

また、本発明の基材フィルムにおいては、MDにおける応力(100%伸長時)が5MPa以上20MPa未満である。5MPa以上の場合は、ダイシング時に刃が基材フィルム中で動かないため、ウエハの切削断面におけるチッピングの発生を防止することができ、また、柔らか過ぎないため、ピックアップ工程においても、ニードルによりチップを突き上げることできる。また、20MPa未満の場合は、基材フィルムの剛性の過度な上昇を抑制して、柔軟性(エキスパンド性)を向上させることができる。 Further, in the base film of the present invention, the stress in MD (at 100% elongation) is 5 MPa or more and less than 20 MPa. When the pressure is 5 MPa or more, the blade does not move in the base film during dicing, which prevents chipping on the cut cross section of the wafer.Also, since the wafer is not too soft, it is difficult to pick up the chips with a needle during the pick-up process. I can push it up. Moreover, in the case of less than 20 MPa, excessive increase in rigidity of the base film can be suppressed and flexibility (expandability) can be improved.

また、同様に、本発明の基材フィルムにおいては、基材フィルムのMDと直交する方向(以下、「TD」という。)における応力(100%伸長時)が5MPa以上20MPa未満であることが好ましい。5MPa以上の場合は、ダイシング時に刃が基材フィルム中で動かないため、ウエハの切削断面におけるチッピングの発生を防止することができ、また、柔らか過ぎないため、ピックアップ工程においても、ニードルによりチップを突き上げることできる。また、20MPa未満の場合は、基材フィルムの剛性の過度な上昇を抑制して、柔軟性(エキスパンド性)を向上させることができる。 Similarly, in the base film of the present invention, the stress (at 100% elongation) in the direction perpendicular to the MD of the base film (hereinafter referred to as "TD") is preferably 5 MPa or more and less than 20 MPa. . When the pressure is 5 MPa or more, the blade does not move in the base film during dicing, which prevents chipping on the cut cross section of the wafer.Also, since the wafer is not too soft, it is difficult to pick up the chips with a needle during the pick-up process. I can push it up. Moreover, in the case of less than 20 MPa, excessive increase in rigidity of the base film can be suppressed and flexibility (expandability) can be improved.

なお、MD、及びTDにおける応力(100%伸長時)は、7MPa以上15MPa以下が好ましい。 Note that the stress in MD and TD (at 100% elongation) is preferably 7 MPa or more and 15 MPa or less.

また、本発明の基材フィルムにおいては、MDにおける応力(100%伸長時)とTDにおける応力(100%伸長時)の差の絶対値が2MPa以下であることが好ましい。このような構成により、基材フィルムの等方性がより一層向上することになる。 Further, in the base film of the present invention, it is preferable that the absolute value of the difference between stress in MD (at 100% elongation) and stress in TD (at 100% elongation) is 2 MPa or less. Such a configuration further improves the isotropy of the base film.

なお、上記「応力」とは、JIS K7161-2:2014に準拠して測定される応力のことを言う。 Note that the above "stress" refers to stress measured in accordance with JIS K7161-2:2014.

また、基材フィルムにおける直鎖状低密度ポリエチレンと、エチレンと共重合したブロックポリプロピレン(または、プロピレンを単独で重合したホモポリプロピレン)との配合比は、本発明の基材フィルムの特徴を損なわない限り、特に制限はないが、基材フィルムの耐熱性と等方性をより一層向上させるとの観点から、質量比で、直鎖状低密度ポリエチレン:ブロックポリプロピレン(またはホモポリプロピレン)=30:70~90:10の範囲が好ましく、40:60~80:20の範囲がより好ましく、50:50~80:20の範囲がさらに好ましい。 In addition, the blending ratio of linear low-density polyethylene and block polypropylene copolymerized with ethylene (or homopolypropylene polymerized with propylene alone) in the base film does not impair the characteristics of the base film of the present invention. Although there are no particular limitations, from the viewpoint of further improving the heat resistance and isotropy of the base film, the mass ratio of linear low density polyethylene: block polypropylene (or homopolypropylene) = 30:70. The range is preferably 90:10, more preferably 40:60 to 80:20, even more preferably 50:50 to 80:20.

また、基材フィルムの全体を100質量部とした場合、直鎖状低密度ポリエチレンとエチレンと共重合したブロックポリプロピレン(または、プロピレンを単独で重合したホモポリプロピレン)からなる樹脂成分の配合量は90質量部以上であることが好ましい。 In addition, when the entire base film is 100 parts by mass, the blending amount of the resin component consisting of linear low density polyethylene and block polypropylene copolymerized with ethylene (or homopolypropylene polymerized with propylene alone) is 90 parts by mass. It is preferable that it is more than part by mass.

基材フィルムの厚みは、50~300μmが好ましく、70~200μmがより好ましい。基材フィルムの厚みが50μm以上であれば、ハンドリング性が向上し、厚みが300μm以下であれば、柔軟性(エキスパンド性)を向上させることができる。なお、ウエハ用の基材フィルムの場合は、50~150μmが好ましく、70~100μmがより好ましい。また、パッケージ用の基材フィルムの場合は、100~300μmが好ましく、150~200μmがより好ましい。 The thickness of the base film is preferably 50 to 300 μm, more preferably 70 to 200 μm. When the thickness of the base film is 50 μm or more, handling properties are improved, and when the thickness is 300 μm or less, flexibility (expandability) can be improved. In addition, in the case of a base film for wafers, the thickness is preferably 50 to 150 μm, more preferably 70 to 100 μm. Further, in the case of a base film for a package, the thickness is preferably 100 to 300 μm, more preferably 150 to 200 μm.

<製造方法>
本発明の基材フィルムは、上述のポリエチレン系樹脂とポリプロピレン系樹脂とを含有する樹脂材料を用いて、例えば、Tダイを備える押出機により、所定の温度で押し出し成形することにより製造される。なお、公知のカレンダー法やインフレーション法により、本発明の基材フィルムを製造してもよい。
<Manufacturing method>
The base film of the present invention is manufactured by extrusion molding at a predetermined temperature using, for example, an extruder equipped with a T-die using a resin material containing the above-mentioned polyethylene resin and polypropylene resin. Note that the base film of the present invention may be manufactured by a known calendar method or inflation method.

<他の形態>
本発明の基材フィルムには、各種添加剤が含有されていてもよい。添加剤としては、ダイシングテープに通常用いられる公知の添加剤を用いることができ、例えば、架橋助剤、帯電防止剤、熱安定剤、酸化防止剤、紫外線吸収剤、滑剤、アンチブロッキング剤、着色剤等が挙げられる。なお、これらの添加剤は、1種を単独で使用してもよく、2種以上を併用してもよい。
<Other forms>
The base film of the present invention may contain various additives. As additives, known additives commonly used in dicing tapes can be used, such as crosslinking aids, antistatic agents, heat stabilizers, antioxidants, ultraviolet absorbers, lubricants, antiblocking agents, and colorants. agents, etc. In addition, these additives may be used individually by 1 type, and may use 2 or more types together.

また、架橋助剤としては、例えば、トリアリルイソシアヌレート等が挙げられ、基材フィルムが架橋助剤を含有する場合、基材フィルム中の架橋助剤の含有量は、基材フィルムを形成する樹脂100質量部に対して、0.05~5質量部が好ましく、1~3質量部がより好ましい。 Further, examples of the crosslinking aid include triallyl isocyanurate, and when the base film contains the crosslinking aid, the content of the crosslinking aid in the base film is such that the content of the crosslinking aid in the base film forms the base film. It is preferably 0.05 to 5 parts by weight, more preferably 1 to 3 parts by weight, based on 100 parts by weight of the resin.

以下に、本発明を実施例に基づいて説明する。なお、本発明は、これらの実施例に限定されるものではなく、これらの実施例を本発明の趣旨に基づいて変形、変更することが可能であり、それらを本発明の範囲から除外するものではない。 The present invention will be explained below based on examples. Note that the present invention is not limited to these examples, and these examples can be modified and changed based on the spirit of the present invention, and these examples are excluded from the scope of the present invention. isn't it.

ダイシングテープ用基材フィルムの作製に使用した材料を以下に示す。
(1)LLDPE-1:直鎖状低密度ポリエチレン、融点:120℃、密度:0.913g/cm、MFR:2.0g/10分(東ソー社製、商品名:ニポロン-Z、ZF220)
(2)LLDPE-2:直鎖状低密度ポリエチレン、融点:124℃、密度:0.919g/cm、MFR:2.0g/10分(プライムポリマー社製、商品名:ウルトゼックス、2022F)
(3)LDPE:低密度ポリエチレン、融点:106℃、密度:0.920g/cm、MFR:7.0g/10分(住友化学社製、商品名:スミカセン、CE4506)
(4)ブロックPP:エチレンと共重合したブロックポリプロピレン、融点:164℃、密度:0.900g/cm、MFR:0.6g/10分(住友化学社製、商品名:ノーブレン、AD571)
(5)ホモPP:プロピレンを単独で重合したホモポリプロピレン、融点:163℃、密度:0.900g/cm、MFR:0.5g/10分(住友化学社製、商品名:ノーブレン、D101)
(6)ランダムPP:エチレンとプロピレンとが共重合したランダムポリプロピレン、融点:132℃、密度:0.890g/cm、MFR:1.5g/10分(住友化学社製、商品名:ノーブレン、S131)
(7)オレフィン系熱可塑性エラストマー:エチレンとプロピレンが共重合したオレフィン系エラストマー、融点:無し、密度:0.889c/cm、MFR:8.0g/10分(Exxon Mobil社製、商品名:Vistamaxx、3588FL)
(実施例1)
<基材フィルムの作製>
まず、表1に示す各材料をブレンドして、表1に示す組成(質量部)を有する実施例1の樹脂材料を用意した。次に、この樹脂材料を、ラボプラストミル(東洋精機社製)を用いて、幅230mmのTダイスにより、ダイス温度220~240℃の条件で押出すことにより、表1の厚みを有する基材フィルムを得た。
The materials used for producing the base film for dicing tape are shown below.
(1) LLDPE-1: Linear low-density polyethylene, melting point: 120°C, density: 0.913 g/cm 3 , MFR: 2.0 g/10 min (manufactured by Tosoh Corporation, product name: Nipolon-Z, ZF220)
(2) LLDPE-2: Linear low-density polyethylene, melting point: 124°C, density: 0.919 g/cm 3 , MFR: 2.0 g/10 min (manufactured by Prime Polymer Co., Ltd., product name: Urtozex, 2022F)
(3) LDPE: low density polyethylene, melting point: 106°C, density: 0.920 g/cm 3 , MFR: 7.0 g/10 min (manufactured by Sumitomo Chemical Co., Ltd., product name: Sumikasen, CE4506)
(4) Block PP: block polypropylene copolymerized with ethylene, melting point: 164°C, density: 0.900 g/cm 3 , MFR: 0.6 g/10 min (manufactured by Sumitomo Chemical Co., Ltd., product name: Noblen, AD571)
(5) HomoPP: homopolypropylene obtained by polymerizing propylene alone, melting point: 163°C, density: 0.900g/cm 3 , MFR: 0.5g/10 min (manufactured by Sumitomo Chemical Co., Ltd., product name: Noblen, D101)
(6) Random PP: Random polypropylene copolymerized with ethylene and propylene, melting point: 132°C, density: 0.890 g/cm 3 , MFR: 1.5 g/10 min (manufactured by Sumitomo Chemical Co., Ltd., product name: Noblen, S131)
(7) Olefin thermoplastic elastomer: Olefin elastomer copolymerized with ethylene and propylene, melting point: none, density: 0.889 c/cm 3 , MFR: 8.0 g/10 min (manufactured by Exxon Mobil, product name: Vistamaxx, 3588FL)
(Example 1)
<Preparation of base film>
First, each material shown in Table 1 was blended to prepare a resin material of Example 1 having the composition (parts by mass) shown in Table 1. Next, this resin material is extruded using a Labo Plast Mill (manufactured by Toyo Seiki Co., Ltd.) through a T-die with a width of 230 mm at a die temperature of 220 to 240°C to form a base material having the thickness shown in Table 1. Got the film.

<貯蔵弾性率(E’)の算出>
動的粘弾性測定装置(日立ハイテクサイエンス社製、商品名:DMS6100)を用いて、開始温度25℃、終了温度250℃、昇温速度6℃/分の条件下で、作製した基材フィルム(MD)の100℃、110℃、及び120℃における貯蔵弾性率(E’)を算出した。そして、100℃における貯蔵弾性率(E’)が20MPa以上、110℃における貯蔵弾性率(E’)が10MPa以上、及び120℃における貯蔵弾性率(E’)が5MPa以上の場合に、基材フィルムの耐熱性が優れているものとした。以上の結果を表1に示す。
<Calculation of storage elastic modulus (E')>
Using a dynamic viscoelasticity measuring device (manufactured by Hitachi High-Tech Science Co., Ltd., trade name: DMS6100), the substrate film ( MD) storage elastic modulus (E') at 100°C, 110°C, and 120°C was calculated. When the storage modulus (E') at 100°C is 20 MPa or more, the storage modulus (E') at 110°C is 10 MPa or more, and the storage modulus (E') at 120°C is 5 MPa or more, the base material The film was considered to have excellent heat resistance. The above results are shown in Table 1.

<MD、及びTDにおける応力(100%伸長時)の測定>
作製した基材フィルムを用いて、JIS K7161-2:2014に準拠して、測定用のサンプルを得た。次に、得られた測定用サンプルを、つかみ具間が40mmとなるように引張試験機(島津製作所社製,商品名:AG-5000A)にセットし、JIS K7161-2:2014に準拠して、温度が23℃、相対湿度が40%の環境下において、引張速度300mm/分にて引張試験を行った。そして、基材フィルムのMD、及びTDにおける、100%伸長時の応力(100%応力)を測定し、応力が20MPa未満の場合に、基材フィルムの柔軟性が優れているものとした。また、MDにおける応力(100%伸長時)とTDにおける応力(100%伸長時)の差を算出し、応力の差の絶対値が2MPa以下の場合を基材フィルムの等方性が優れているものとした。以上の結果を表1に示す。
<Measurement of stress in MD and TD (at 100% elongation)>
Using the prepared base film, a sample for measurement was obtained in accordance with JIS K7161-2:2014. Next, the obtained measurement sample was set in a tensile tester (manufactured by Shimadzu Corporation, product name: AG-5000A) so that the distance between the grips was 40 mm, and tested in accordance with JIS K7161-2:2014. A tensile test was conducted at a tensile speed of 300 mm/min in an environment with a temperature of 23° C. and a relative humidity of 40%. Then, the stress at 100% elongation (100% stress) in MD and TD of the base film was measured, and when the stress was less than 20 MPa, the flexibility of the base film was considered to be excellent. In addition, the difference between the stress in MD (at 100% elongation) and the stress in TD (at 100% elongation) is calculated, and if the absolute value of the difference in stress is 2 MPa or less, the isotropy of the base film is excellent. I took it as a thing. The above results are shown in Table 1.

(実施例2~12、比較例1~6)
樹脂成分の組成を表1に示す組成(質量部)に変更したこと以外は、上述の実施例1と同様にして、表1に示す厚みを有する基材フィルムを作製した。
(Examples 2 to 12, Comparative Examples 1 to 6)
A base film having the thickness shown in Table 1 was produced in the same manner as in Example 1 above, except that the composition of the resin component was changed to the composition (parts by mass) shown in Table 1.

そして、上述の実施例1と同様にして、貯蔵弾性率(E’)の算出、及び応力(100%伸長時)の測定を行った。以上の結果を表1に示す。 Then, in the same manner as in Example 1 above, the storage modulus (E') was calculated and the stress (at 100% elongation) was measured. The above results are shown in Table 1.

Figure 0007377723000001
Figure 0007377723000001

表1に示すように、直鎖状低密度ポリエチレンと、エチレンと共重合したブロックポリプロピレンとにより構成された実施例1~8の基材フィルム、及び直鎖状低密度ポリエチレンと、プロピレンを単独で重合したホモポリプロピレンとにより構成された実施例9~12の基材フィルムにおいては、100℃における貯蔵弾性率(E’)が20MPa以上、110℃における貯蔵弾性率(E’)が10MPa以上、及び120℃における貯蔵弾性率(E’)が5MPa以上であるため、耐熱性に優れていることが分かる。また、基材フィルムのMD、及びTDにおける応力が20MPa未満であるため、柔軟性に優れるとともに、応力の差の絶対値が2MPa以下であるため、等方性に優れていることが分かる。 As shown in Table 1, the base films of Examples 1 to 8 were composed of linear low density polyethylene and block polypropylene copolymerized with ethylene, and the base films of Examples 1 to 8 were composed of linear low density polyethylene and propylene alone. In the base films of Examples 9 to 12 composed of polymerized homopolypropylene, the storage modulus (E') at 100 ° C. is 20 MPa or more, the storage modulus (E') at 110 ° C. is 10 MPa or more, and Since the storage modulus (E') at 120° C. is 5 MPa or more, it can be seen that it has excellent heat resistance. Furthermore, since the stress in the MD and TD of the base film is less than 20 MPa, it has excellent flexibility, and since the absolute value of the difference in stress is 2 MPa or less, it can be seen that it has excellent isotropy.

一方、比較例1の基材フィルムにおいては、エチレンと共重合したブロックポリプロピレンのみからなるため、剛性が高くなり、柔軟性(エキスパンド性)が低下する。従って、比較例1の基材フィルムは、柔軟性と等方性に乏しいことが分かる。 On the other hand, in the base film of Comparative Example 1, since it is made only of block polypropylene copolymerized with ethylene, the rigidity is increased and the flexibility (expandability) is decreased. Therefore, it can be seen that the base film of Comparative Example 1 has poor flexibility and isotropy.

また、比較例2の基材フィルムにおいては、プロピレンを単独で重合したホモポリプロピレンのみからなるため、剛性が高く、柔軟性が低下し、表1に示すように、基材フィルムのMDにおける応力が20MPaよりも大きくなるとともに、基材フィルムのTDにおいて、フィルムが破断した。従って、比較例2の基材フィルムは、柔軟性と等方性に乏しいことが分かる。 In addition, since the base film of Comparative Example 2 is made only of homopolypropylene obtained by polymerizing propylene alone, the rigidity is high and the flexibility is low, and as shown in Table 1, the stress in the MD of the base film is When the pressure exceeded 20 MPa, the film broke at the TD of the base film. Therefore, it can be seen that the base film of Comparative Example 2 has poor flexibility and isotropy.

また、比較例3の基材フィルムにおいては、エチレンと共重合したブロックポリプロピレンの代わりに、ランダムポリプロピレンが含まれており、このランダムポリプロピレンは、上述のごとく、柔軟性に優れるが、融点が低いため、比較例3の基材フィルムは、貯蔵弾性率(E’)が低く、耐熱性に乏しいことが分かる。 In addition, in the base film of Comparative Example 3, random polypropylene is included instead of block polypropylene copolymerized with ethylene, and as mentioned above, this random polypropylene has excellent flexibility but has a low melting point. It can be seen that the base film of Comparative Example 3 has a low storage modulus (E') and poor heat resistance.

また、比較例4の基材フィルムは、直鎖状低密度ポリエチレンのみからなるため、融点が低く、高温で熱変形が生じる。従って、比較例4の基材フィルムは、貯蔵弾性率(E’)が低く、耐熱性に乏しいことが分かる。なお、溶融によりフィルムが破断したため、120℃における貯蔵弾性率(E’)を測定することができなかった。 Moreover, since the base film of Comparative Example 4 is made only of linear low-density polyethylene, it has a low melting point and undergoes thermal deformation at high temperatures. Therefore, it can be seen that the base film of Comparative Example 4 has a low storage modulus (E') and poor heat resistance. Note that the storage modulus (E') at 120° C. could not be measured because the film was broken due to melting.

また、比較例5の基材フィルムは、密度の大きい(0.920g/cm)低密度ポリエチレンのみからなるため、等方性に乏しく、また、当該低密度ポリエチレンのMFRが大きく(7.0g/10分)、融点が低いため、耐熱性に乏しいことが分かる。なお、溶融によりフィルムが破断したため、120℃における貯蔵弾性率(E’)を測定することができなかった。 Furthermore, since the base film of Comparative Example 5 consists only of low-density polyethylene with a high density (0.920 g/cm 3 ), it has poor isotropy, and the MFR of the low-density polyethylene is large (7.0 g/cm 3 ). /10 minutes), it can be seen that it has poor heat resistance due to its low melting point. Note that the storage modulus (E') at 120° C. could not be measured because the film was broken due to melting.

また、比較例6の基材フィルムは、オレフィン系熱可塑性エラストマーが含まれており、このオレフィン系熱可塑性エラストマーは、軟化温度が低いため、比較例6の基材フィルムは、貯蔵弾性率(E’)が低く、耐熱性に乏しいことが分かる。なお、溶融によりフィルムが破断したため、110℃、及び120℃における貯蔵弾性率(E’)を測定することができなかった。 In addition, the base film of Comparative Example 6 contains an olefin-based thermoplastic elastomer, and since this olefin-based thermoplastic elastomer has a low softening temperature, the base film of Comparative Example 6 has a storage modulus (E ') is low, indicating poor heat resistance. Note that the storage modulus (E') at 110°C and 120°C could not be measured because the film was broken due to melting.

以上説明したように、本発明は、ダイシングテープ用基材フィルムに適している。 As explained above, the present invention is suitable for a base film for dicing tape.

Claims (7)

密度が0.910~0.919g/cm である直鎖状低密度ポリエチレンとポリプロピレン系樹脂とを含むダイシングテープ用基材フィルムであって、
100℃における貯蔵弾性率が25MPa以上200MPa以下であり、110℃における貯蔵弾性率が20MPa以上170MPa以下であり、120℃における貯蔵弾性率が15MPa以上140MPa以下であり、
MDにおける応力(100%伸長時)が5MPa以上20MPa未満である
ことを特徴とするダイシングテープ用基材フィルム。
A base film for a dicing tape comprising a linear low density polyethylene having a density of 0.910 to 0.919 g/cm 3 and a polypropylene resin,
The storage modulus at 100°C is 25 MPa or more and 200 MPa or less, the storage modulus at 110°C is 20 MPa or more and 170 MPa or less, and the storage modulus at 120°C is 15 MPa or more and 140 MPa or less,
A base film for a dicing tape, characterized in that the stress in MD (at 100% elongation) is 5 MPa or more and less than 20 MPa.
TDにおける応力(100%伸長時)が5MPa以上20MPa未満であることを特徴とする請求項1に記載のダイシングテープ用基材フィルム。 The base film for dicing tape according to claim 1, wherein the stress in TD (at 100% elongation) is 5 MPa or more and less than 20 MPa. 前記MDにおける応力(100%伸長時)と前記TDにおける応力(100%伸長時)の差の絶対値が2MPa以下であることを特徴とする請求項2に記載のダイシングテープ用基材フィルム。 The base film for dicing tape according to claim 2, wherein the absolute value of the difference between the stress in the MD (at 100% elongation) and the stress in the TD (at 100% elongation) is 2 MPa or less. チレンと共重合したブロックポリプロピレン、またはプロピレンを単独で重合したホモポリプロピレンと
を含むことを特徴とする請求項1~請求項3のいずれか1項に記載のダイシングテープ用基材フィルム。
The base film for a dicing tape according to any one of claims 1 to 3, comprising block polypropylene copolymerized with ethylene, or homopolypropylene polymerized solely with propylene.
前記直鎖状低密度ポリエチレンと前記ブロックポリプロピレンとの質量比が、直鎖状低密度ポリエチレン:ブロックポリプロピレン=30:70~7030であることを特徴とする請求項4に記載のダイシングテープ用基材フィルム。 5. The dicing tape according to claim 4, wherein the mass ratio of the linear low-density polyethylene and the block polypropylene is linear low-density polyethylene:block polypropylene=30: 70 to 70:30 . Base film. 前記直鎖状低密度ポリエチレンと前記ホモポリプロピレンとの質量比が、直鎖状低密度ポリエチレン:ホモポリプロピレン=30:70~90:10であることを特徴とする請求項4に記載のダイシングテープ用基材フィルム。 The dicing tape according to claim 4, wherein the mass ratio of the linear low density polyethylene and the homopolypropylene is linear low density polyethylene: homopolypropylene = 30:70 to 90:10. Base film. 前記直鎖状低密度ポリエチレンのメルトマスフローレートが、1.0~6.0g/10分以上であることを特徴とする請求項4~請求項6のいずれか1項に記載のダイシングテープ用基材フィルム。 The base for dicing tape according to any one of claims 4 to 6, wherein the linear low density polyethylene has a melt mass flow rate of 1.0 to 6.0 g/10 minutes or more. material film.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116920A (en) 2003-10-10 2005-04-28 Nitto Denko Corp Adhesive sheet for semiconductor processing and method for processing semiconductor
JP2005340796A (en) 2004-04-28 2005-12-08 Mitsui Chemicals Inc Surface protecting film for semiconductor wafer and protecting method of semiconductor wafer using the protecting film
JP2013239502A (en) 2012-05-14 2013-11-28 Gunze Ltd Base substance film for dicing
WO2015146596A1 (en) 2014-03-28 2015-10-01 リンテック株式会社 Base film for dicing sheet, dicing sheet including said base film, and process for producing said base film
WO2019172220A1 (en) 2018-03-07 2019-09-12 リンテック株式会社 Adhesive sheet

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197814A (en) 1982-05-14 1983-11-17 シ−ケ−デイ株式会社 Device for mounting rubber bushing
JP4643134B2 (en) 2003-09-10 2011-03-02 グンゼ株式会社 Substrate film for dicing sheet
JP4651472B2 (en) * 2005-07-26 2011-03-16 アキレス株式会社 Base film for semiconductor manufacturing tape
JP5568428B2 (en) 2009-10-15 2014-08-06 アキレス株式会社 Base film for tape for semiconductor manufacturing process

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005116920A (en) 2003-10-10 2005-04-28 Nitto Denko Corp Adhesive sheet for semiconductor processing and method for processing semiconductor
JP2005340796A (en) 2004-04-28 2005-12-08 Mitsui Chemicals Inc Surface protecting film for semiconductor wafer and protecting method of semiconductor wafer using the protecting film
JP2013239502A (en) 2012-05-14 2013-11-28 Gunze Ltd Base substance film for dicing
WO2015146596A1 (en) 2014-03-28 2015-10-01 リンテック株式会社 Base film for dicing sheet, dicing sheet including said base film, and process for producing said base film
WO2019172220A1 (en) 2018-03-07 2019-09-12 リンテック株式会社 Adhesive sheet

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