TWI317053B - - Google Patents
Download PDFInfo
- Publication number
- TWI317053B TWI317053B TW094132861A TW94132861A TWI317053B TW I317053 B TWI317053 B TW I317053B TW 094132861 A TW094132861 A TW 094132861A TW 94132861 A TW94132861 A TW 94132861A TW I317053 B TWI317053 B TW I317053B
- Authority
- TW
- Taiwan
- Prior art keywords
- exposure
- substrate
- optical
- pattern
- optical path
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims description 129
- 239000000758 substrate Substances 0.000 claims description 120
- 238000013461 design Methods 0.000 claims description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 24
- 238000012546 transfer Methods 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 13
- 238000005286 illumination Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 230000036961 partial effect Effects 0.000 claims description 2
- 230000008439 repair process Effects 0.000 claims description 2
- 241000237536 Mytilus edulis Species 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 235000020638 mussel Nutrition 0.000 claims 1
- 239000010408 film Substances 0.000 description 34
- 238000007654 immersion Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004313 glare Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 238000006552 photochemical reaction Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004301748A JP4625673B2 (ja) | 2004-10-15 | 2004-10-15 | 露光方法及び露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200632566A TW200632566A (en) | 2006-09-16 |
| TWI317053B true TWI317053B (cg-RX-API-DMAC7.html) | 2009-11-11 |
Family
ID=36180370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094132861A TW200632566A (en) | 2004-10-15 | 2005-09-22 | Exposure method and exposure equipment |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7446853B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4625673B2 (cg-RX-API-DMAC7.html) |
| TW (1) | TW200632566A (cg-RX-API-DMAC7.html) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20180117228A (ko) * | 2004-01-05 | 2018-10-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US7501227B2 (en) * | 2005-08-31 | 2009-03-10 | Taiwan Semiconductor Manufacturing Company | System and method for photolithography in semiconductor manufacturing |
| JP2007194484A (ja) * | 2006-01-20 | 2007-08-02 | Toshiba Corp | 液浸露光方法 |
| US7666576B2 (en) * | 2006-06-07 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exposure scan and step direction optimization |
| US20080050680A1 (en) * | 2006-08-24 | 2008-02-28 | Stefan Brandl | Lithography systems and methods |
| JP4316595B2 (ja) * | 2006-09-13 | 2009-08-19 | 株式会社東芝 | 液浸補助板の洗浄方法と液浸露光方法及びパターン形成方法 |
| US8330936B2 (en) * | 2006-09-20 | 2012-12-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4357514B2 (ja) * | 2006-09-29 | 2009-11-04 | 株式会社東芝 | 液浸露光方法 |
| JP2008227007A (ja) * | 2007-03-09 | 2008-09-25 | Toshiba Corp | 液浸露光方法及び液浸露光装置 |
| DE102007025340B4 (de) * | 2007-05-31 | 2019-12-05 | Globalfoundries Inc. | Immersionslithograpieprozess unter Anwendung einer variablen Abtastgeschwindigkeit und Lithographiesystem |
| JP2009194247A (ja) * | 2008-02-15 | 2009-08-27 | Canon Inc | 露光装置 |
| US20090303454A1 (en) * | 2008-06-10 | 2009-12-10 | Nikon Corporation | Exposure apparatus with a scanning illumination beam |
| US20090310115A1 (en) * | 2008-06-12 | 2009-12-17 | Nikon Corporation | Apparatus and method for exposing adjacent sites on a substrate |
| NL2002983A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | A lithographic apparatus and a method of operating the lithographic apparatus. |
| EP2151717A1 (en) * | 2008-08-05 | 2010-02-10 | ASML Holding N.V. | Full wafer width scanning using step and scan system |
| US8610878B2 (en) * | 2010-03-04 | 2013-12-17 | Asml Netherlands B.V. | Lithographic apparatus and method |
| KR20120100628A (ko) * | 2011-03-04 | 2012-09-12 | 삼성정밀화학 주식회사 | 전방향족 액정 폴리에스테르 수지의 제조방법과 그 방법에 의해 제조된 수지, 및 상기 수지를 포함하는 컴파운드 |
| JP5986538B2 (ja) * | 2013-06-10 | 2016-09-06 | キヤノン株式会社 | 露光装置および物品の製造方法 |
| JP5960198B2 (ja) | 2013-07-02 | 2016-08-02 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
| JP2016154241A (ja) * | 2013-07-02 | 2016-08-25 | キヤノン株式会社 | パターン形成方法、リソグラフィ装置、リソグラフィシステムおよび物品製造方法 |
| US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP2000021702A (ja) * | 1998-06-30 | 2000-01-21 | Canon Inc | 露光装置ならびにデバイス製造方法 |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| CN100568101C (zh) | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| JP2005072132A (ja) | 2003-08-21 | 2005-03-17 | Nikon Corp | 露光装置及びデバイス製造方法 |
| WO2005106930A1 (ja) * | 2004-04-27 | 2005-11-10 | Nikon Corporation | 露光方法、露光装置及びデバイス製造方法 |
-
2004
- 2004-10-15 JP JP2004301748A patent/JP4625673B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-22 TW TW094132861A patent/TW200632566A/zh not_active IP Right Cessation
- 2005-10-14 US US11/249,712 patent/US7446853B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006114765A (ja) | 2006-04-27 |
| TW200632566A (en) | 2006-09-16 |
| JP4625673B2 (ja) | 2011-02-02 |
| US20060082747A1 (en) | 2006-04-20 |
| US7446853B2 (en) | 2008-11-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI317053B (cg-RX-API-DMAC7.html) | ||
| US7271877B2 (en) | Method and apparatus for maskless photolithography | |
| TWI249656B (en) | Exposure apparatus and method | |
| TWI261732B (en) | Composite optical lithography method for patterning lines of significantly different widths | |
| US7224434B2 (en) | Exposure method | |
| CN1864103A (zh) | 用于浸式光刻的方法和器件 | |
| CN1695076A (zh) | 连续地直接写的光刻技术 | |
| US20090323035A1 (en) | Exposure apparatus and method, maintenance method for exposure apparatus, and device manufacturing method | |
| KR100858407B1 (ko) | 포토마스크, 포토마스크를 사용하는 방법 및 장치,포토마스크 패턴 생성 방법, 패턴 형성 방법 및 반도체소자 | |
| JP2008529079A (ja) | 露光方法および装置 | |
| CN101556438B (zh) | 光刻设备和器件制造方法 | |
| US20070165201A1 (en) | System and Method for Reducing Disturbances Caused by Movement in an Immersion Lithography System | |
| JP2005223321A (ja) | ２重露光による増強されたリソグラフィ分解能 | |
| JP2010514203A (ja) | パターニングデバイス、パターニングデバイスを提供する方法、フォトリソグラフィ装置、および、デバイス製造方法 | |
| TWI441239B (zh) | 製造微影元件的方法、微影單元及電腦程式產品 | |
| KR20080080919A (ko) | 액침노광장치 및 디바이스 제조방법 | |
| JP2006019510A (ja) | 露光装置及びマイクロデバイスの製造方法 | |
| US20060104413A1 (en) | Mask repeater and mask manufacturing method | |
| JP2007503612A (ja) | 光学画像を形成する方法、当該方法における使用のための集束素子の配列及び光弁の配列、当該方法を実施するための装置、並びに、当該方法を用いるデバイスを製造するためのプロセス。 | |
| JP2006032834A (ja) | 露光装置、露光方法及び半導体装置の製造方法 | |
| JP2004022945A (ja) | 露光装置及び方法 | |
| JP2005183421A (ja) | 照明光学装置、露光装置、および露光方法 | |
| JPH1032159A (ja) | 露光装置、反射マスク、およびデバイスの製造方法 | |
| KR100515368B1 (ko) | 쉬프트 패터닝에 의하여 반도체 소자의 미세패턴을형성하는 노광장치 및 그 방법 | |
| JPH08241846A (ja) | 露光装置およびレーザ加工装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |