TWI315403B - - Google Patents

Info

Publication number
TWI315403B
TWI315403B TW095111634A TW95111634A TWI315403B TW I315403 B TWI315403 B TW I315403B TW 095111634 A TW095111634 A TW 095111634A TW 95111634 A TW95111634 A TW 95111634A TW I315403 B TWI315403 B TW I315403B
Authority
TW
Taiwan
Application number
TW095111634A
Other versions
TW200706880A (en
Inventor
Katsuya Okumura
Masami Yakabe
Naoki Ikeuchi
Original Assignee
Octec Inc
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Octec Inc, Tokyo Electron Ltd filed Critical Octec Inc
Publication of TW200706880A publication Critical patent/TW200706880A/zh
Application granted granted Critical
Publication of TWI315403B publication Critical patent/TWI315403B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0035—Testing
    • B81C99/005—Test apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P21/00—Testing or calibrating of apparatus or devices covered by the preceding groups
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
TW095111634A 2005-03-31 2006-03-31 Microstructure probe card, and microstructure inspecting device, method, and computer program TW200706880A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005102760 2005-03-31
JP2005102751 2005-03-31
JP2005266720 2005-09-14

Publications (2)

Publication Number Publication Date
TW200706880A TW200706880A (en) 2007-02-16
TWI315403B true TWI315403B (zh) 2009-10-01

Family

ID=37073431

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111634A TW200706880A (en) 2005-03-31 2006-03-31 Microstructure probe card, and microstructure inspecting device, method, and computer program

Country Status (7)

Country Link
US (1) US20090128171A1 (zh)
EP (1) EP1870714A4 (zh)
JP (1) JPWO2006106876A1 (zh)
KR (1) KR20070083503A (zh)
CN (1) CN101151540B (zh)
TW (1) TW200706880A (zh)
WO (1) WO2006106876A1 (zh)

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JP5108238B2 (ja) * 2006-02-24 2012-12-26 東京エレクトロン株式会社 検査方法、検査装置及び制御プログラム
US7859277B2 (en) * 2006-04-24 2010-12-28 Verigy (Singapore) Pte. Ltd. Apparatus, systems and methods for processing signals between a tester and a plurality of devices under test at high temperatures and with single touchdown of a probe array
KR100855628B1 (ko) * 2006-10-02 2008-09-03 삼성전기주식회사 광변조기 검사를 위한 장치 및 방법
JP2009139172A (ja) * 2007-12-05 2009-06-25 Tokyo Electron Ltd 微小構造体の変位量検出装置
EP2446285B1 (de) * 2009-06-22 2018-01-24 Cascade Microtech Dresden GmbH Verfahren zur messung eines leistungsbauelements
CN102759949A (zh) * 2011-04-28 2012-10-31 富泰华工业（深圳）有限公司 电子装置及其状态控制方法
US8860448B2 (en) * 2011-07-15 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Test schemes and apparatus for passive interposers
US8917106B2 (en) 2011-11-09 2014-12-23 Advantest America, Inc. Fine pitch microelectronic contact array and method of making same
CN103135022B (zh) * 2011-11-23 2016-01-20 上海华虹宏力半导体制造有限公司 在测试程序中自动检测探针卡接触特性的方法
DE202012002391U1 (de) * 2012-03-08 2013-06-10 Rosenberger Hochfrequenztechnik Gmbh & Co. Kg Vorrichtung zur Messung elektronischer Bauteile
CN103018651B (zh) * 2012-12-06 2014-09-03 中国电子科技集团公司第十三研究所 用于mems器件的在片测试系统及其测试方法
CN103091617B (zh) * 2013-01-29 2017-08-15 无锡华润上华科技有限公司 一种半导体测试方法
JP6155725B2 (ja) * 2013-03-19 2017-07-05 富士電機株式会社 半導体装置の検査方法及びその方法を用いた半導体装置の製造方法
WO2014199431A1 (ja) * 2013-06-10 2014-12-18 三菱電機株式会社 車両間伝送装置
US9527731B2 (en) * 2014-10-15 2016-12-27 Nxp Usa, Inc. Methodology and system for wafer-level testing of MEMS pressure sensors
US10565912B2 (en) 2017-11-06 2020-02-18 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Electrical characteristics inspection method
CN107884693A (zh) * 2017-11-06 2018-04-06 武汉华星光电半导体显示技术有限公司 电气特性测试方法
JP6881354B2 (ja) * 2018-03-07 2021-06-02 オムロン株式会社 検査ユニットおよび検査装置
CN112014710B (zh) * 2020-08-27 2023-04-21 泉芯集成电路制造(济南)有限公司 针压适配方法、装置、针测设备及可读存储介质
TWI821750B (zh) * 2020-10-07 2023-11-11 台灣愛司帝科技股份有限公司 電子元件量測設備、電子元件量測方法及發光二極體的製造方法
SE2251043A1 (en) 2022-09-08 2024-03-09 Silex Microsystems Ab Microstructure inspection device and system and use of the same

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JPH0351768A (ja) * 1989-07-19 1991-03-06 Hitachi Ltd ガラス基板テスト用プローブ端子構造およびこれを用いたテスト方法
JP2944056B2 (ja) * 1990-08-06 1999-08-30 東京エレクトロン株式会社 電気回路測定用探針の接触検知装置及びこの接触検知装置を用いた電気回路測定装置
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US6232790B1 (en) * 1999-03-08 2001-05-15 Honeywell Inc. Method and apparatus for amplifying electrical test signals from a micromechanical device
JP3440037B2 (ja) * 1999-09-16 2003-08-25 三洋電機株式会社 半導体装置、半導体エレクトレットコンデンサマイクロホンおよび半導体エレクトレットコンデンサマイクロホンの製造方法。
JP4841737B2 (ja) * 2000-08-21 2011-12-21 東京エレクトロン株式会社 検査方法及び検査装置
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US20040119492A1 (en) * 2002-11-01 2004-06-24 Stefan Schneidewind Method and apparatus for testing movement-sensitive substrates
JP4456325B2 (ja) * 2002-12-12 2010-04-28 東京エレクトロン株式会社 検査方法及び検査装置
JP4387125B2 (ja) * 2003-06-09 2009-12-16 東京エレクトロン株式会社 検査方法及び検査装置
JP2005037199A (ja) * 2003-07-18 2005-02-10 Yamaha Corp プローブユニット、導通試験方法及びその製造方法

Also Published As

Publication number Publication date
JPWO2006106876A1 (ja) 2008-09-11
KR20070083503A (ko) 2007-08-24
CN101151540B (zh) 2010-07-21
EP1870714A4 (en) 2010-05-19
WO2006106876A1 (ja) 2006-10-12
US20090128171A1 (en) 2009-05-21
CN101151540A (zh) 2008-03-26
EP1870714A1 (en) 2007-12-26
TW200706880A (en) 2007-02-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees