TWI313623B - Coating treatment apparatus, coating treatment method and computer readable storage medium - Google Patents
Coating treatment apparatus, coating treatment method and computer readable storage medium Download PDFInfo
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1313623 九、發明說明: 【發明所屬之技術領域】 本發明係關於將塗布抗蝕劑液等塗布液塗布在液晶表示裝置 用之玻璃基板等基板上之塗布處理裝置及塗布處理方法,及電腦 可讀取之記憶媒體。 【先前技術】 ^例如,液晶表示裝置(LCD)或半導體裝置之製造步驟之中, 係使用光微影技術,在玻璃基板或半導體晶圓形成既定之電路圖[Technical Field] The present invention relates to a coating processing apparatus and a coating processing method for applying a coating liquid such as a resist liquid to a substrate such as a glass substrate for a liquid crystal display device, and a computer processing method. Read the memory media. [Prior Art] ^ For example, in the manufacturing steps of a liquid crystal display device (LCD) or a semiconductor device, a photolithography technique is used to form a predetermined circuit pattern on a glass substrate or a semiconductor wafer.
案。該光微影技術之中,係對玻璃基板供給抗姓劑液而進行形成 塗布膜之塗布處理後,將該等乾燥並逐次進行接續的曝光處理、 顯影處理。 其中,於抗触劑塗布處理,係採用:旋轉塗布,使玻璃其板等 旋轉而從其旋轉中心正上方將祕舰_基板表面,藉^離心 力,使抗蝕劑液擴開到基板全面;及狹縫塗布,邊從狹縫型喷嘴使 抗蚀劑液流出,邊使基板與喷嘴以直線的相對移動,而既 膜厚之抗钱劑膜。 於任-塗布方式之情形都是抗姉丨液之黏度使膜 ,化’,於抗_液之減係由抗侧及對其所添稀 (=㈣轉狀配合關賴定,_條為對胁所要 厚專而改變抗鋪與稀剩之配合比_進行適#的塗布處理。、 然而,當使用配合比例不同的抗蝕劑液時,必需各 又,必須要事先準備為了供抗餘劑膜厚之變更要求 门 1313623 之抗蝕劑液藉著喷嘴而供給予半導體晶圓等被處理基板。 然而,上述專利文獻1之中,並未揭示驗證實際上是否為正 偏Ϊ果配比1離了既^者’最初之被處理基板膜厚 情形,不僅浪費了用在該處理基板之抗_,同 圖4所示導管88中存在的抗勉劑液吾棄而再試行配 *的抗侧液魏浪f。尤其,LCD狀玻璃基板最近 I付愈來愈大型化,甚至出現單邊為2m的巨大基板,像如上 變得不能忽視。再者’當實施像這種賊行之情形, 會浪費該日守間分,造成生產量降低。 馨 [專利文獻1]曰本特開平10_242〇45號公報 【發明内容】 (發明欲解決之問題;) . $=有鑑該情事而生,目的為提供—種塗布處理裝置 、Ιίΐίΐ ’ ^力地抑制浪費抗蝴液之消耗,並能不降低生 像這種塗用以實施 (解^iiJiT可讀取之記憶媒體。 装置為觀點之中提供—種塗布處理 塗布液;溶劑用=3布液送出部’用以送出高濃度之 部及溶劑送出部以導管連接& 部前述塗布液送出 布液而於基板形成塗布=稀^布機構’流出稀釋塗 編合部; 1313623 定範㈡巧圍’於,該混合比例不在既 塗布液與從前述溶齊7送出部塗达出部所送出之高濃度 合比例在既定範_之“ ? 3劑的混合_ ’於前述混 布液之送出目的地成為述切換機構而使前述稀釋塗 於談糾二4 ^塗布液咖機構侧。 數。/ 〃 1用_稀碰布液之塗軸厚度作為前述參 本發明之第2觀點提供一插涂 高濃度塗布液送出部,^置’其特徵在於具備: ^釋塗布液;塗布城出機構,流農度之 饋送稀釋塗布液;稀㈣布液供給機構流出機構 述塗布液流出機構供給稀釋塗布液.曰饋^導官而對前 送導^之途中取出稀釋塗布液並使返回前述稀從前述饋 而循環;切換機構,使前述稀釋塗布液之 2液饋送導管 流出機構側與前述塗布液循環部之間切5的^在前述塗布液 切換機構使前述稀釋塗布液之饋送目1地塗布機構,於前述 環部之狀態’從前述稀釋塗布液循環布液循 控塗布;师収裝置鐵前麵㈣布而進行監 度;控制機構,以如下方式控制:由前述膜厚#裝、=之塗布膜厚 結果來判斷前述高濃度塗布液與溶劑之混人置之膜厚測定 圍,當判斷該混合比例不在既定範圍之情;在既定範 之饋送目的地維持前述稀釋塗布液循環部,釋塗布液 塗布液送出部所送出高濃度塗布液與前述濃度 之混合比例,當前述混合比例在既定範圍 2运出溶劑 換機構而使前述稀釋塗布液之送出目的士二^,操作前述切 構側。 &成為則述塗布液流出機 1313623 合區ΐ發、Zi中,前述混合部可為具有下列之構成:會 i有游側。又,前述塗布液流出機構,可使用: ΐ為釋塗布液者。再者,前述切‘ 前述繼杨 送導管對前述稀釋塗布液供給“ 機構供給稀釋塗布=、。、;4^用1魏緩衝槽對前述塗布液流出 述緩衝;冗釋液供給機構較佳為具有前 機構連接之方式構成。、、、衝槽”中之一為與前述塗布液流出 稀釋監蹲管,從前述 置於前述監控用導管之前诚.gA 、士,皿控塗布用流出噴嘴,設 管,從前述監控用導 釋塗;=^體?塗布以稀 暫時貯存用:i進行 列的5成:監控用緩衝槽, 衝槽通顺_送導|循 二導管,從監控用緩 導官,從前述監控用緩衝槽取出前:狀構成:監控用 贺嘴,設於前述監控用導管之前 、^液,^控塗布用流出 控用導管’從前述稀釋塗布液循、二^:用°即筒,設於前述監 供給稀釋塗布液。 °p對則述監控塗布用流出噴嘴 前述監控塗麵構之前频㈣财使物筒,並以邊使親 1313623 筒旋轉,邊進行監控塗布之方式進行。又, 前述被塗布體可使用監控用基板,並以邊使前述監之 ,及前述監控用基板之間產生相對移動,邊對3 2監控塗布之方式進行。再者,就述監控塗布機 言’可使用掛設在多數輸送贿之傳送帶,邊使 ^邊進行監控塗布之方式。於該情形,較佳為使從 ^流出2嘴之,釋塗布液流出在任—前述輸送輥筒的 又,則述膜厚測定裝置較佳為配置在任一前述 _饩夕 上方來進行财敎。 収财_之正 下牛贿供-觀械理綠,其特徵為具有以 SiiiiT合f中所形成之稀釋塗布液並監控作“認 不在既定範圍之情形,調整前述高濃度^。前’ 出機構,而藉由從^^ 糾’而對基板上塗布稀麵;並在該基 布液與溶劑之混合比例是否為既定範圍;於判 ,塗布有稀釋塗布液的_,為了次—基板,實施’ 布液與溶劑之混合比例是否在狀範圍,於判斷該 既域圍之情形,調整前述高濃度塗布液與前述溶 膜厚^讀形’就前述參數而言,可使时述稀釋塗布液之塗布 本發明之第4觀點提供一種塗布處理方法,其特徵 將高濃度塗布液與溶麻合喊轉魏定濃度/之稀釋 1布液,抽取前述混合部中所形成之稀釋塗布液並進行監控塗 ΐίίΪΪί控塗布之塗布膜膜厚;從前述膜厚測^結果來判斷前 述同農度塗麵與賴之混合關衫在既定伽;於麟該混合 1313623 比例不在既定顧之情形’ 麵高濃度塗布絲前述溶劑之 此合比例,於前述混合比例為既定範圍内之情形,使前述稀釋塗 布液對塗布液流出機構供給,而藉由從前述塗布液流出機構使前 ^稀釋塗布液流出,而在基板上塗布稀釋塗布液;並在該基板塗布 ,,塗布液之期間’為了次-基板,實施下列步歡抽取在前述 混合部所形成稀釋塗布液並進行監控塗布;測定已進行監控塗布之 膜厚;從前述麟測定結果來觸前述高濃度塗布液與溶劑 判斷該混合比例不在既定範圍之 It形凋正刖述同》辰度塗布液與前述溶劑之混合比例。 監ϊ塗布用流出喷嘴對前述輥筒流出稀;i布液: 塗布可藉由邊使前述監控塗布用流出喷 “ιίίίίΐί1產生相對移動,邊從前述監控塗布用流 邊使掛設在多數輸送輥筒的傳送帶』邊: 用述傳送帶流 於該情形,前述監控塗布之中,二二二。 布膜膜厚之败步驟’較佳送正上方進行。又’塗 膜厚測定。 r㈣在任—㈣輸魏狀正上方進行 成之膜巧=在使前述監控塗布所形 本發明:?:ϊίΐ f厚之_變化來計算膜厚。 記憶有於電腦執行控制程式腦可讀取之記憶媒體,係 概行’其 使電腦控制塗布處理裝置。了便以實施上述任一方法之方式 [發明之效果] 依照本發明,使高濃度塗布液與溶劑在線上混合而後進行濃 1313623 及進行藉由通過單元之對抗蝕劑處理單元23的基板G遞送。 轨卢。輸送I置33可以上下動、前後動、旋轉動’也可以接近 熱處理早兀區塊(TB)31 · 32之任一單元。 一晶第2熱處理單元部27,具有對基板G施以熱處理之熱處理單 兀唛層$成之2個熱處理單元區塊(TB)34、35,熱處理單元區塊 ^叫34設置在抗蝕劑處理單元23側,熱處理單元區塊(TB)35設 置於顯影處理單元(DEV)24侧。並且,該等2個熱處理單元區塊 (TB)34、35之間,設有第2輸送裝置36。case. In the photolithography technique, an anti-surname liquid is applied to a glass substrate to form a coating film, and then dried and successively subjected to exposure treatment and development treatment. Wherein, in the anti-touching agent coating treatment, the spin coating is used to rotate the glass plate and the like, and the surface of the secret ship_substrate is directly above the center of rotation thereof, and the resist liquid is expanded to the entire substrate; In the slit coating, the resist liquid is discharged from the slit nozzle, and the substrate and the nozzle are moved in a straight line, and the film is thick. In the case of the application-coating method, the viscosity of the anti-sputum liquid is made to make the film, and the reduction of the anti-liquid is made by the anti-side and the addition of the anti-liquid (= (four) rotation-like coordination, _ For the threat, it is necessary to change the ratio of the anti-paving and the dilute to the coating treatment. However, when using a different proportion of the resist liquid, it is necessary to prepare in advance for the anti-residue. The change of the film thickness of the film requires the resist liquid of the gate 1313623 to be supplied to the substrate to be processed such as a semiconductor wafer by a nozzle. However, in the above Patent Document 1, it is not disclosed whether or not the verification is actually a positive partial load ratio. 1 is away from the original case of the substrate thickness of the treated substrate, not only wasted the resistance used in the substrate, and the anti-caries agent present in the catheter 88 shown in Fig. 4 was discarded and tried again. Anti-side liquid Wei Lang f. In particular, the LCD-shaped glass substrate has become more and more large in recent years, and even a huge substrate with a unilateral side of 2 m has become impossible to ignore as above. In this case, the day-to-day separation will be wasted, resulting in a decrease in production. Xin [Patent Document 1]曰本特开平10_242〇45号 [Summary of the invention] (The problem to be solved by the invention;) . $=There is a case in which the purpose is to provide a coating treatment device, Ιίΐίΐ ' ^ forcefully suppress waste of anti-bloom Consumption, and can be implemented without reducing the application of the image (the iiJiT readable memory medium is provided. The device provides a coating treatment coating solution for the viewpoint; the solvent is used for the 3 liquid delivery portion) The high-concentration portion and the solvent delivery portion are sent to the coating liquid by the conduit connection & the coating liquid is supplied to the substrate to form a coating-slipping mechanism, and the diluted coating-bonding portion is discharged; 1313623, the standard (2), the mixing ratio The ratio of the high concentration of the coating liquid and the high-concentration ratio sent out from the coating portion of the coating unit 7 is set to "the mixing ratio of the three agents" at the delivery destination of the mixed liquid. The above-mentioned dilution is applied to the side of the coating liquid coffee machine. The number / 〃 1 is used to apply the high-concentration coating liquid delivery portion as the second viewpoint of the above-mentioned reference invention. ^定' is characterized by ^Release coating solution; coating city outlet mechanism, flow-agricultural feed dilution coating liquid; dilute (four) cloth liquid supply mechanism outflow mechanism, coating liquid outflow mechanism to supply diluted coating liquid, feeds and guides on the way to the front guide Extracting the diluted coating liquid and returning the smear from the feed to the circulation; and switching the mechanism to cut between the liquid feeding conduit outflow mechanism side of the diluted coating liquid and the coating liquid circulation portion in the coating liquid switching mechanism The coating mechanism for diluting the coating liquid is applied in the state of the ring portion in the manner of 'circulating and discharging the liquid from the diluted coating liquid; the front side of the iron is placed on the front of the device; the control mechanism is controlled as follows : determining the film thickness measurement range of the mixed film of the high-concentration coating liquid and the solvent by the film thickness of the film thickness and the film thickness of the film, and determining that the mixing ratio is not within the predetermined range; Maintaining the diluted coating liquid circulation portion, and discharging the mixing ratio of the high-concentration coating liquid sent from the coating liquid coating liquid sending portion to the concentration, when the mixing ratio is in a predetermined range 2 out of the solvent the switching mechanism of the coating solution fed was diluted two persons ^ purpose, the cutting operation side configuration. & As a coating liquid outflow machine 1313623, the mixing portion may have the following configuration: the meeting i has a swimming side. Further, as the coating liquid discharge means, it is possible to use: ΐ is a coating liquid. Further, in the step of cutting, the step of supplying the diluted coating liquid to the dilution coating liquid is "supplied by the mechanism supply, and the buffer solution is buffered by the first buffer tank; the buffer liquid supply means is preferably One of the means for connecting the front mechanism, and one of the flushing grooves is to flow out of the dilution monitoring tube with the coating liquid, and before the monitoring catheter is placed, the g-flow nozzle is used for the coating. Set the tube, from the above-mentioned monitoring with guided release coating; = ^ body? The coating is used for the temporary storage: 5% of the column: the monitoring buffer tank, the fluent channel is _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The hemorrhoids are provided before the monitoring catheter, and the liquid flow control valve for the coating is used to follow the dilute coating liquid, and the liquid is supplied to the diluted coating liquid. Pp 对 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控 监控Further, the object to be coated can be used by monitoring the coating while using the substrate for monitoring while causing relative movement between the substrate and the substrate for monitoring. Furthermore, the above-mentioned monitoring and coating machine can be used for monitoring and coating on the conveyor belt which is attached to most of the bribes. In this case, it is preferable that the film thickness measuring device is disposed above any of the above-mentioned transporting rolls, and the film thickness measuring device is disposed on the top of the transport roller.收 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a mechanism for coating a thin surface on a substrate by correcting it; and whether the mixing ratio of the base cloth liquid and the solvent is within a predetermined range; and determining that the diluted coating liquid is applied, for the sub-substrate, Whether or not the mixing ratio of the cloth liquid and the solvent is in the range of the shape, and determining the range of the surrounding area, adjusting the high-concentration coating liquid and the thickness of the dissolved film, the read shape can be diluted and coated as described above. The fourth aspect of the present invention provides a coating treatment method characterized in that a high-concentration coating liquid and a solution of dilute to a concentration of distillate/diluted 1 cloth are mixed, and a diluted coating liquid formed in the mixing portion is extracted. The thickness of the coating film is controlled by the coating ; ΪΪ ΪΪ ; ; ; ; ; ; ; 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控 控High concentration coating In the case where the mixing ratio of the above-mentioned solvent is within a predetermined range, the diluted coating liquid is supplied to the coating liquid outflow mechanism, and the pre-dilution coating liquid is discharged from the coating liquid discharge mechanism. The diluted coating liquid is applied onto the substrate; and the substrate is coated with the coating liquid, and the diluted coating liquid formed in the mixing portion is subjected to the following steps for the secondary substrate, and the coating coating is performed; Thickness; from the result of the above-mentioned lining measurement, the high-concentration coating liquid and the solvent are judged to be in a range in which the mixing ratio is not within the predetermined range, and the mixing ratio of the coating material to the solvent is the same. The above-mentioned roller flows out of the thin; i cloth liquid: coating can be carried out by the side of the monitoring coating application flow while the relative flow of the monitoring coating is carried out, and the conveyor belt is suspended from the conveyor belt of the plurality of conveying rollers. The conveyor belt flows in this case, among the aforementioned monitoring coatings, two two two. The step of defeating the film thickness is preferably carried out directly above. Also, the film thickness was measured. r (4) is carried out in the - (4) directly above the weft-forming shape. The film thickness is calculated by making the aforementioned monitoring coating shape: ?: ϊίΐ f thick _ change. The memory is stored in the computer-executable control program, and the memory media is available to the computer. In the method of carrying out any of the above methods [Effects of the Invention] According to the present invention, a high-concentration coating liquid and a solvent are mixed on-line, followed by concentration 1313623 and substrate G delivery by the unit to the resist processing unit 23 by the unit . Rail. The transport I set 33 can be moved up and down, forward and backward, and rotated, and can also be close to any unit of the heat treatment early block (TB) 31 · 32. The first crystal heat treatment unit portion 27 has two heat treatment unit blocks (TB) 34 and 35 which are heat-treated by heat-treating the substrate G, and the heat treatment unit block 34 is disposed on the resist. On the processing unit 23 side, a heat treatment unit block (TB) 35 is provided on the development processing unit (DEV) 24 side. Further, a second conveying device 36 is provided between the two heat treatment unit blocks (TB) 34 and 35.
熱處理單元區塊(TB)34為4段疊層構造,從下面開始依序設 有:用以行基板G遞送之通過單元,及對基板G進行預烘處理之 3個預烘單元。又,熱處理單元區塊(TB)35為4段疊層構造,從 下面開始依序設有:用以進行基板G遞送之通過單元,及使基板G 冷卻之冷卻單元,及對基板G進行預烘處理之2個預烘單元。 第2輸送裝置36進行:藉著通過單元從抗蝕劑處理單元2接取 基板G,在上述熱處理單元之間之基板G搬出入、藉著通過單元 對顯景彡處理單元(DEV)24之基板G遞送,及對後述界面站3之基 板遞送部,即延伸•冷卻台座(Εχτ · c〇L)44之基板G遞送及接 取。又,第2輸送裝置36具有與第1輸送裝置33同樣構造,也 可接近熱處理單元區塊(TB)34、35任一的單元。 第3熱處理單元部28具有對基板G施以熱處理之熱處理單元 疊層構成之2個熱處理單元區塊(TB)37、38,熱處理單元區塊 (TB)37设於顯影處理單元(DEV)24側,熱處理單元區塊仰坪設 於匣盒站1側。並且,該等2個熱處理單元區塊(TB)37、38之間, 設有第3輸送裝置39。 熱處理單元區塊(TB)37為4段疊層構造,從下面開始依序設 有:進行基板G遞送之通過單元,及對基板G進行後烘處理之3 個後烘單元。又,熱處理單元區塊(TB)38為4段疊層構造,從下 面開始依序設有:後供單元、進行基板G之遞送及冷卻之通過•冷 卻單元,及對基板G進行後烘處理之2個後供單元。 1313623 第3輸送裝置39進行藉著通過單元之從丨線Uv照射單元 (i-UV)25接取基板G、上述熱處理單元間之基板〇搬出入、藉著 通過•冷卻單元對匣盒站丨之基板G遞送。又第3輸送裝置39 也具有與第1輸送裝置33同樣的構造,也可接近熱處理單元區坡 (TB)37、38任一單元。 尽 於處理站2,如以上方式,構成2列輸送線a · B,並且基本The heat treatment unit block (TB) 34 has a four-stage laminated structure, and is sequentially provided with: a passing unit for conveying the substrate G, and three pre-baking units for pre-baking the substrate G. Further, the heat treatment unit block (TB) 35 has a four-stage laminated structure, and is provided with a pass unit for performing substrate G delivery, a cooling unit for cooling the substrate G, and a substrate G to be sequentially arranged from below. 2 pre-bake units for baking treatment. The second transport device 36 performs the process of picking up the substrate G from the resist processing unit 2 by the passing unit, and the substrate G between the heat treatment units is carried in and out, and the display unit (DEV) 24 is passed through the unit. The substrate G is delivered, and the substrate G of the interface station 3, which will be described later, is delivered and picked up by the substrate G of the extension/cooling pedestal 44. Further, the second transporting device 36 has the same structure as the first transporting device 33, and can also be adjacent to any of the heat treatment unit blocks (TB) 34, 35. The third heat treatment unit portion 28 has two heat treatment unit blocks (TB) 37 and 38 which are formed by laminating heat treatment units for heat-treating the substrate G, and the heat treatment unit block (TB) 37 is provided in the development processing unit (DEV) 24 On the side, the heat treatment unit block is located on the side of the box station. Further, a third conveying device 39 is provided between the two heat treatment unit blocks (TB) 37 and 38. The heat treatment unit block (TB) 37 has a four-stage laminated structure, and is provided with a pass unit for performing substrate G delivery and three post-baking units for post-baking the substrate G in this order. Further, the heat treatment unit block (TB) 38 has a four-stage laminated structure, and is sequentially provided from the lower side: a rear supply unit, a substrate G delivery and cooling pass, a cooling unit, and a post-baking treatment of the substrate G. 2 after the supply unit. 1313623 The third transport device 39 picks up the substrate G from the U line Uv illuminating unit (i-UV) 25 by the passing unit, and transports the substrate between the heat treatment units, and passes through the cooling unit to the cassette station. Substrate G delivery. Further, the third transport device 39 has the same structure as that of the first transport device 33, and may be close to any unit of the heat treatment unit zone slopes (TB) 37, 38. As far as the processing station 2 is concerned, as in the above manner, two rows of conveying lines a · B are formed, and basically
上=處理順序,配置各處理單元及輸送裝置,該等輸送線A·B 間設有空間40。並且,在該空間4〇設有可前進後退移動之穿梭 ,(基板載置構件)41。該穿梭裝置41為可保持基板G之構成 著穿梭裝置41,在輸送線a · b間進行基板〇遞送。對於穿梭^ 置41之基板G遞送,係藉著上述第丨至第3輸送裝置% : 39進行。 、—界面站3具有:輸送裝置42,在處理站2與曝光裝置4之 =基板G搬出人;緩衝台座(BUF)43,配置緩衝^盒;及延 *具有冷卻機能之基板遞送部,將字 幕產生S (TITLER)與周邊曝光装置㈣上下地疊層 ^1與送1 送4^3接設置。輸送裝置42具有輸送臂‘ 輸送# 42a ’在處理站2與曝光裝置4之間進行基板g之 之中ί式構成之抗蝕劑塗布·顯影處理系統10〇 之中,處理動作之概略加以説明。首先,在匣盒站丨 所配置紐盒C内的基板G,藉著輸送裝 ^ (e-UV)22 ' «, 輸k裝置1卜基板G被搬入擦磨清洗處理單 磨清洗。制清洗處職,級G M =^、HR)2卜進仃擦 於笛1献考神留-Arro . 籍由例如滚動輸送’搬出到屬 熱處理單元區塊(TB)31之通過單元 輸送:ί理最初被 著,輸送 15 1313623 提高抗蚀劑之定著性,被輸送到熱處理單元區塊(ΤΒ)31之黏附處 理單元及熱處理單元區塊(ΤΒ)32之黏附處理單元其中之一,於此 j HMDS進行黏附處理(疏水化處理)。之後,基板G輸送到冷卻 單元並冷卻,再者輸送到熱處理單元區塊(TB)32之通過單元。像 這些一連串處理時之基板G輸送處理,皆是利用第丨輸送裝置33 進行。 配置在熱處理單元區塊(TB)32之通過單元之基板G,藉由設 於通過單元之例如滾動輸送機構等基板輸送機構,被搬入抗蝕劑 單元23内。抗蝕劑塗布裝置(CT)23a之中,將基板〇以水In the upper = processing sequence, each processing unit and transport device are arranged, and a space 40 is provided between the transport lines A·B. Further, in the space 4, a shuttle (substrate mounting member) 41 that can move forward and backward is provided. The shuttle device 41 is a shuttle device 41 that can hold the substrate G, and performs substrate transport between the transport lines a and b. The delivery of the substrate G to the shuttle 41 is performed by the above-described third to third transfer means %:39. - the interface station 3 has: a transport device 42, a substrate G of the processing station 2 and the exposure device 4; a buffer pedestal (BUF) 43, a buffer cartridge; and a substrate delivery unit having a cooling function, Subtitle generation S (TITLER) and peripheral exposure device (4) are stacked up and down ^1 and sent 1 to 4^3. The transport device 42 has a transport arm 'transport # 42a ' between the processing station 2 and the exposure device 4, among the substrates g, among the resist coating and development processing systems 10, which are configured in a climatic manner, the outline of the processing operation will be described. . First, the substrate G in the cassette C disposed in the cassette station is transported by the transport apparatus (e-UV) 22 '«, and the substrate G is loaded into the rubbing cleaning process to be cleaned by the single cleaning. Cleaning department, level GM = ^, HR) 2 仃 仃 仃 于 笛 笛 献 献 Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar Ar The first is, the transfer 15 1313623 to improve the stability of the resist, is transported to the heat treatment unit block (ΤΒ) 31 of the adhesion processing unit and heat treatment unit block (ΤΒ) 32 of the adhesion processing unit, This j HMDS is subjected to an adhesion treatment (hydrophobic treatment). Thereafter, the substrate G is transported to the cooling unit and cooled, and then transferred to the passing unit of the heat treatment unit block (TB) 32. The substrate G transport processing in the series of processing as described above is performed by the second transport device 33. The substrate G disposed in the passing unit of the heat treatment unit block (TB) 32 is carried into the resist unit 23 by a substrate transfer mechanism such as a rolling conveyance mechanism provided in the passing unit. In the resist coating device (CT) 23a, the substrate is watered
平安勢邊輸送邊供給抗蚀劑液而形成塗布膜,之後,在減壓乾燥 裝置(VD)23b對塗布膜施以減壓乾燥處理。之後,基板〇藉著設 於,壓乾燥裝置(VD)23b之基板輸送臂,從抗蝕劑處理單元23 遞^到屬於第2熱處理單元部27之熱處理單元區塊(tb)34之通 過單元。 配置在熱處理單元區塊(ΤΒ)34之通過單元之基板g,藉著第 2 ^送裝置36,輸送到熱處理單元區塊(ΤΒ)34之預烘單元及熱 =元區塊(ΤΒ)35之預烘單元其中之—並進行預烘處理,之&, 輸达處理單元㈣(ΤΒ)35之冷料元並冷卻至既定温度。並 ^二藉著第2輸送裝置36,再送到熱處理單元區塊(ΤΒ)35之通 過早元。 、人广之後’基板〇藉由第2輸送裝置36輸送到界面站3之延伸· ^卻二座(ΕΧΤ · COL)44,並視需* ’藉由界面站3之輸送襄 42 ’輸,外部裝置區塊45之周邊曝光裝置㈣,於此,進# 用以除去杬蝕劑膜外周部(不要部分)之曝光。接美The coating liquid is supplied while supplying the resist liquid while being conveyed, and then the coating film is subjected to a reduced-pressure drying treatment in a vacuum drying apparatus (VD) 23b. Thereafter, the substrate is transferred from the resist processing unit 23 to the passing unit of the heat treatment unit block (tb) 34 belonging to the second heat treatment unit portion 27 by the substrate transfer arm provided in the pressure drying device (VD) 23b. . The substrate g disposed in the unit of the heat treatment unit block 34 is transported to the pre-baking unit of the heat treatment unit block 34 and the heat=meta block (ΤΒ) 35 by the second feeding device 36. The pre-baking unit is - and pre-baked, and is cooled to a predetermined temperature by the cooling element of the processing unit (4) (ΤΒ) 35. And by the second conveying device 36, it is sent to the heat treatment unit block (ΤΒ) 35 through the early element. After the person is wide, the 'substrate 输送 is transported to the interface station 3 by the second transport device 36. ^ is two (ΕΧΤ · COL) 44, and as needed * 'transported by the interface station 3 襄 42 ', The peripheral exposure device (4) of the external device block 45, here, is used to remove the exposure of the outer peripheral portion (not the portion) of the etchant film. Beautiful
4,此,縣板g上^紐劑^ 既疋圖案獻曝域理。又,基板G _43之緩衝便盒,之後輸送到曝光^先收、、,内於緩衝台座4, this, the county board g on the ^ button agent ^ 疋 疋 pattern to expose the domain. Moreover, the buffer box of the substrate G_43 is then transported to the exposure, first received, and inside the buffer pedestal.
货晋基板G藉著界_3之輸送裝置42被搬入外部 裝置£塊45上段之字幕產生器(T咖R),並在基板〇記上S 16 1313623 資訊後’載置在延伸•冷卻台座(EXT · COL)44。基板G夢著第 2輸送裝置36,從延伸•冷卻台座(Εχτ · COL)44輸送到』於 2熱處理單元部27之熱處理單元區塊(TB)35之通過單元。、 沖-藉由從熱處理單元區塊(TB)35之通過單元延長到顯影處理 f元(DEV)24為止之例如滚動輸送機構作用,將基板〇從&理 • 單元區塊(TB)35之通過單元搬入顯影處理單元(DEV)24。 處理單元(DEV)24之巾’例如邊祕紐水平姿勢觀、= 影液盛裝在基板G上,之後,一次停止基板(3輸送,藉由美 1傾斜既定肖度,使基板G上之顯織流落,並且於雜態二對 土板G供給沖洗液,流洗顯影液。之後,使基板G回到水平姿勢, 再度開始輸送,並藉由將乾燥用氮氣或空氣對基板〇吹送, 板G乾燥。 土 顯影處理結束後,基板G從顯影處理單元(DEV)24,藉由連 續的輸送機構’例如滾動輸送,輸送到i線uv照射單元仏^)25, 子基板G把以脱色處理。之後,基板〇藉由丨線照射單元 内之滾動輸送機構,搬出到屬於第3熱處理單元部28之 熟處理單元區塊(ΤΒ)37之通過單元。 3於、於熱處理單元區塊㈣37之通過單元之基板G,藉由第 置39輸送到熱處理單元區塊(TB)37之後烘單元及熱處 送^區,仰)38之後烘單元其中之一,進行後烘處理,之後輸 單元區塊(ΤΒ)38之通過•冷卻單元並冷卻至既定温度後, /匣益站1之輸送裝置u,收納於配置於匣盒站〗之既定匣盒 其次,對抗蝕劑塗布裝置(CT)23aM以詳細説明。 裝抗餘劑塗布裝置(CT)23a之概略平面圖。抗鋪塗布 “多Simi2其3面r定位置設有用以喷射既定 q μ 體噴射16;基板輸送機構13,於台座12上使基板 向輸送;抗蝕劑供給喷嘴14,於在台座12上移動之基板 表面供給抗飿劑液;及喷嘴清洗單元15,用以清洗抗·供給喷 17 1313623 嘴14等。 .幹送2d70 Τ安裝於支柱構件55,並蚊配置於為基板 -屮晗嵴機構118。喷嘴清洗頭120,具有··稀 將;Ϊ解Ϊ 蝕劑供給喷嘴14之抗蝕劑流出口撕附近 —及稀釋液排出管,將已清洗抗韻劑供給喷 i 14收;及4财射嘴,朝向錄劑供給喷 b附近將氮解既定細予叫二 座部❿、塗布台座部12b、搬出 口 以將基板G從熱處理單元區塊 ,^” I2a為用 之區域。塗布台座部12b配置部 抗姓劑供給喷嘴14流出抗辦M,在動^^ 液。搬出台座部a為用以將形成有塗布 燥裝置(VD)23b之區域。风有土▼膜之基板G搬出減壓乾 基板G藉由從氣體喷射口 16喷射之 H之ίί搬態藉由基气輸送機構13輸‘持仗σ 送到搬ΐ台細c之1板t ;;==字輸 將基板G頂尚之頂升銷47。 而另5又有可 喷嘴移動機構20,具備:縱 Η於Z方嫩;_件54,=^供給噴嘴 56,使支柱構件54於X方向移動。藉由像 及检驅動機構 幻4在㈣D _給二==籌二, 育嘴〉月洗早兀15進行清洗處理等各位置之間移 之位置與在 圖3為基板輪送機構13之概略構成 具有:基板保持構件51a、51b,^Y方向端送機構13 線引導構件似、細,於台座12之γ =刀保持基板G;直 万向侧面,以延伸於又方 18 1313623 向之方式配置;連結構件50 ’與保持基板保持構件51a、51b及直 線引導構件52a、52b嵌合;及X轴驅動機構53,使連結構件5〇於 X方向來回移動。The cargo substrate G is carried into the caption generator (T coffee R) of the upper portion of the external device block 45 by the transport device 42 of the boundary_3, and is placed on the extension/cooling pedestal after the information on the substrate is marked S 16 1313623 (EXT · COL) 44. The substrate G dreams of the second transport device 36, and is transported from the extension/cooling pedestal (Εχτ · COL) 44 to the passage unit of the heat treatment unit block (TB) 35 of the heat treatment unit portion 27. , punching - by means of a step extending from the unit of the heat treatment unit block (TB) 35 to the developing process f element (DEV) 24, for example, by a rolling transport mechanism, the substrate is removed from the & unit block (TB) The pass unit of 35 is carried into the development processing unit (DEV) 24. The towel of the processing unit (DEV) 24 is, for example, a horizontal posture view of the edge, and a shadow liquid is mounted on the substrate G. Thereafter, the substrate is stopped once (3 conveyance, and the visible light on the substrate G is tilted by the tilt of the US 1 Flowing, and supplying the rinsing liquid to the hybrid two pairs of soil plates G, and washing the developing solution. Thereafter, the substrate G is returned to the horizontal posture, the conveying is resumed, and the substrate is blown by nitrogen or air for drying, the plate G After the soil development processing is completed, the substrate G is transported from the development processing unit (DEV) 24 to the i-line UV irradiation unit 25 25 by a continuous conveyance mechanism, for example, by rolling, and the sub-substrate G is subjected to decolorization treatment. Thereafter, the substrate 搬 is carried out to the passing unit of the cooked processing unit block 37 belonging to the third heat treatment unit unit 28 by the rolling conveyance mechanism in the rifling irradiation unit. 3, in the heat treatment unit block (four) 37 through the unit substrate G, through the first 39 to the heat treatment unit block (TB) 37 after the drying unit and the heat to send the area, after the 38 after drying unit After the post-baking treatment, after the passage of the unit block (ΤΒ) 38 and the cooling unit and cooling to a predetermined temperature, the conveying device u of the /Yiyi station 1 is stored in the predetermined box arranged in the box station. The resist coating apparatus (CT) 23aM will be described in detail. A schematic plan view of the anti-reagent coating device (CT) 23a is installed. Anti-sand coating "Multi-Simi2 has a three-side r-position for spraying a predetermined q μ body jet 16; a substrate transport mechanism 13 for transporting the substrate on the pedestal 12; and a resist supply nozzle 14 for moving on the pedestal 12 The surface of the substrate is supplied with an anti-caries agent liquid; and the nozzle cleaning unit 15 is used for cleaning the anti-supply spray 17 1313623 nozzle 14 and the like. The dry feed 2d70 is mounted on the strut member 55, and the mosquito is disposed in the substrate-屮晗嵴 mechanism 118. The nozzle cleaning head 120 has a thinner; the vicinity of the resist outlet of the etchant supply nozzle 14 and the diluent discharge tube, and the cleaning agent is supplied to the spray; The fiscal nozzle is directed toward the vicinity of the recording agent supply spray b, and the nitrogen solution is predetermined to be called a two-seat portion, a coating pedestal portion 12b, and a discharge port to use the substrate G from the heat treatment unit block, and I" I2a. The coating pedestal portion 12b arranging portion of the anti-surname supply nozzle 14 flows out of the anti-doping machine M to move the liquid. The pedestal portion a is a region for forming a drying device (VD) 23b. The substrate G of the film having the soil and the film is transported out of the decompressed dry substrate G by the H-jet from the gas injection port 16 by the base gas conveying mechanism 13 to send the holding σ to the plate of the moving table. t ;; == word input will be the top of the substrate G top lift 47. Further, the other 5 has a nozzle movable mechanism 20 which is provided with a longitudinal direction of the Z-shaped member, and a member 54 for supplying the nozzle 56 to move the strut member 54 in the X direction. By the image and inspection drive mechanism Magic 4 in (4) D _ give two = = raise two, Yumou > monthly wash early 15 to clean the position between the positions and the position of the substrate transfer mechanism 13 in Figure 3 The configuration includes: the substrate holding members 51a and 51b, and the Y-direction end feeding mechanism 13 is similar to the wire guiding member, and the y=the blade holding substrate G of the pedestal 12; the straight universal side surface extending to the other side 18 1313623 The connecting member 50' is fitted to the holding substrate holding members 51a and 51b and the linear guiding members 52a and 52b, and the X-axis driving mechanism 53 moves the connecting member 5 in the X direction.
基板保持構件51a、51b各具有設有1個以上用以將基板G吸 附保持於台座部49之吸附墊48之構造,吸附墊藉48藉著未圖示 之真空唧筒等動作,能將基板G吸附保持。吸附墊48於基板G 之中未塗布抗蝕劑液之部分背面側,也就是說基板^^之背面γ方 向端部附近,保持基板G。就X轴驅動機構53而言,例如有:傳 送帶驅動機構或滾珠螺桿、空氣滑動構件(airslider)、電動滑動 件、線性馬達等。 圖4為抗蝕劑供給喷嘴14之概略構造立體圖。抗蝕劑供給噴 嘴14在一方向為長的長尺狀箱體14a,具有設置了使抗蝕劑液大 致成带狀流出之狹縫狀抗餘劑流出口 14b的構造。抗蝕劑供給喷 嘴^4女裝有測疋抗姓劑流出口 i4b與基板G之間隔的感應器(未 圖示)’基於該感應器之測定値,控制對基板G供給抗蝕劑液時之 抗钱劑供給喷嘴14位置。 其次,說明抗蝕劑液供給系。 圖5將上述抗钱劑塗布裝置(cT)23a之中的抗飿劑液供給系 與控制系一起顯示。本實施形態之抗蝕劑液供給系具有:高 姓劑液槽61,貯存有南濃度抗勉劑液;溶劑槽64,貯存有稀釋抗 钱劑液之賴,例如稀湖;及混合部7G,將高濃度鎌劑液與 合。混合部7G具有:會合區塊67,使高濃度抗_液與溶 會合产雷諾兹數(Reyn〇ldS _㈣提高;及靜態混 與溶雛更確實齡。並且,⑽方式,藉由齡 度抗蝕劑液與溶劑混合並成為稀釋抗蝕劑液。 高濃度抗蝕劑液槽61與會合區塊67以導管62連 ,置有高濃,,劑㈣筒63,高敍抗#劑液槽61内之高 抗侧液藉#高敍減舰㈣63供給予會合區塊67。另一^ 1313623 =64與會合區塊以導管65連接,於導管6㈣有溶劑哪 二舍64内之溶劑,例如稀釋劑,藉著溶劑唧筒66 又,導管62及導f 65之管徑變細,液體容易 以從會合區塊67往抗蝕劑液流出嘴嘴14側延伸 机 ϋ稀釋抗__送導管69,上述靜態混合器關設置^ ^ =液饋送導管69。稀釋抗·_送導f 69藉| 6 ,接於2個緩衝槽71a、71b,於混合部7Q調整為^ 杬蝕劑液被饋送至該等緩衝槽71a、71b = 管Μ而連接於通到 予抗飿脑_嘴14。另,,69==^= 閥75a、75b,導管72a、72b設有開並 槽 71a、7ib 其中之 緩衝槽7la、71b、抗钱劑液供 / ^ =液。又,^述 灿、73、閥76a、76b構成抗軸^供給、69b、72a、 另一方面,於導管69通到緩衝槽71 環用導管69c連接監控職衝槽7 循 回導管82藉著三向閥76連接於導管69 送 合器68之間的部分。送回導管 區塊67與靜態混 69 -監控_槽77 :經過導管 76構成通往導管69之循環管線 、及三向閥 _設有閥W,藉崎作設在通“ :^7,衝=之導管 69a、6%的閥75a、75b及該閥75e 1^7lb之導管 供給機構侧與循環管線側切換。士 4 θ _^稀釋抗蝕劑液在抗蝕劑 用為該等之切換機構。 也就疋說’問75a、祝、75c作Each of the substrate holding members 51a and 51b has a structure in which one or more adsorption pads 48 for adsorbing and holding the substrate G to the pedestal portion 49 are provided. The adsorption pad 48 can be operated by a vacuum cylinder or the like (not shown). Adsorption is maintained. The adsorption pad 48 holds the substrate G on the back side of the portion of the substrate G where the resist liquid is not applied, that is, in the vicinity of the end portion of the substrate γ in the direction of the back surface. The X-axis drive mechanism 53 includes, for example, a belt drive mechanism or a ball screw, an air sliding member, an electric slider, a linear motor, and the like. FIG. 4 is a schematic perspective view showing the resist supply nozzle 14. The resist supply nozzle 14 has a structure in which a slit-shaped anti-reagent outlet port 14b for allowing the resist liquid to flow out in a strip shape is provided in the long-length case 14a having a long length in one direction. The resist supply nozzle 4 has a sensor (not shown) for measuring the distance between the anti-surname agent outlet i4b and the substrate G. Based on the measurement of the sensor, when the resist liquid is supplied to the substrate G, The anti-money agent is supplied to the nozzle 14 position. Next, a resist liquid supply system will be described. Fig. 5 shows the anti-caries liquid supply system among the above-described anti-money agent coating device (cT) 23a together with the control system. The resist liquid supply system of the present embodiment includes a high-name liquid solution tank 61 in which a south concentration anti-caries agent liquid is stored, a solvent tank 64 in which a diluted anti-money agent liquid is stored, such as a thin lake, and a mixing portion 7G. , the high concentration of tincture liquid and combined. The mixing portion 7G has a meeting block 67 for increasing the Reynolds number of the high-concentration anti-liquid and the dissolved reynolds (Reyn〇ldS _ (4); and static mixing and immersion to be more sure. And, (10), by age resistance The etchant liquid is mixed with the solvent and becomes a diluted resist liquid. The high-concentration resist liquid tank 61 and the rendezvous block 67 are connected by a conduit 62, and are provided with a high-concentration, agent (four) cylinder 63, high-synthesis anti-agent liquid tank The high anti-side liquid in the 61 is given by the #高叙减船(四)63 for the rendezvous block 67. The other ^ 1313623 = 64 is connected with the junction 65 by the conduit 65, and the conduit 6 (4) has the solvent of the solvent, for example, The diluent, by the solvent cylinder 66, the diameter of the conduit 62 and the guide tube 65 is thinned, and the liquid is easily extended from the meeting block 67 to the side of the nozzle liquid flowing out of the nozzle 14 to dilute the anti-_ delivery duct 69 , the above static mixer is set to ^ ^ = liquid feed conduit 69. The dilution anti-_feed f 69 borrows | 6 , is connected to the two buffer tanks 71a, 71b, and is adjusted to be mixed in the mixing portion 7Q To the buffer tanks 71a, 71b = the tube is connected to the anti-camphor_mouth 14. Further, 69 ==^= valves 75a, 75b, and the ducts 72a, 72b are provided with the opening groove 71a. 7ib, the buffer tanks 7la, 71b, and the anti-money agent supply / ^ = liquid. Moreover, the description of the can, 73, the valves 76a, 76b constitute the anti-axis supply, 69b, 72a, on the other hand, the conduit 69 The buffer tank 71 is connected to the monitoring buffer 7 by the conduit 69c. The return conduit 82 is connected to the portion between the conduit 69 and the feeder 68 by the three-way valve 76. The return conduit block 67 is statically mixed 69 - Monitoring _ Slot 77: a circulation line that leads to the conduit 69 through the conduit 76, and a three-way valve _ is provided with a valve W, which is provided in the passage ":^7, the rush=the conduit 69a, the 6% valve 75a, 75b and The conduit supply mechanism side of the valve 75e 1^7lb is switched to the circulation line side. The 4 θ _^ diluted resist liquid is used as a switching mechanism for the resist. It is said that 'a question 75a, wish, 75c Make
20 1313623 82,尚通過各導管82a,82b連接於緩衝槽71a、 於導2 Ιίΐ用卿筒84從緩衝槽71a、71b送回抗敍劑液。又, 於導! 82a、82b、82c 設有開閉閥 83a、83b、83c。 控用之底部除上述轉_外,尚連接有監 L ; ^ 之另一端連接有監控塗布用流出喷嘴79。 ㈣筒⑽’藉由使料筒8G作動,從監 槽77藉者迪將f π對監控塗布用流出喷嘴79供給 二配比稀釋的稀釋抗蝕劑液。又,於導管78設有開閉閥81。 々、/ft控塗布用流出嘴嘴79流出之抗鋪液被監控塗布在適春 ?塗布體,=如鋪或玻璃基板。並且,於監控塗布用流出^ 布臈&附近’設有膜㈣定裝置85 ’齡由監控塗布所形成之塗 沾η ϋ’卩筒63、66、74、8G、84,可於使用該領域-般使用 、風相π即鱗、膜片η即筒(Diaphragm Pump)、注射咋ρ筒等。 包含像這種抗姓劑液供給系之控制,抗蚀劑塗布裝置 =T)23a之控制係藉著控制器9〇進行。控制器9〇進行上述唧筒 、66、74、80、84之控制及所有閥之控制,同時也可以控制各 驅動機構等其他構成部。對於抗_液供料、,基於上述監於 用塗布所形成膜之膜厚賴刺定裝置85測定之結果,控制^ =及66 ’進行抗蝕劑液槽61内高濃度之抗蝕劑液及溶劑槽64内 釋劑等/谷劑之混合比例之微調整,同時也能控制混合並稀釋後 之稀釋抗蝕劑液的供給目的地等。 控制器90藉由上位之控制抗蝕劑塗布•顯影處理系統1〇〇全 ,的上位處理控制器92所控制。控制器90及處理控制器92由電 腦構成。 處理控制器92藉由像上述控制器9〇進行唧筒及閥等控制以 外二控制抗蝕劑塗布•顯影處理系統100之各構成部。於處理控 制器92連接著使用者界面93,由工程管理者為了管理抗蝕劑塗 布•顯影系統100而進行指令輸入操作等之鍵盤,或將抗姓劑塗 1313623 布•顯影系統100之運作狀況可見化顯示的顯示器等所構成。 又’於,理控制n 92連接著記憶部94,存放有用以將抗蚀劑 主布•顯影系統100所執行之各種處理藉處理控制器92之控制實 式,或用輯應域理條件*在電漿侧裝置之各構 ^巧處理之財,也歧配抑edpe)。存放之配方也包含上 述控制器90進行之唧筒及閥等控制。 配方可記憶在硬碟或半導體記憶體,也可以於收納在 =DROM、DVD等可攜性記憶媒體之狀態下設定在記憶部94之既20 1313623 82, the conduits 82a, 82b are connected to the buffer tank 71a, and the cartridges 71 are returned to the cartridges 71a, 71b from the buffer tanks 71a, 71b. Further, the opening and closing valves 83a, 83b, and 83c are provided in the guides 82a, 82b, and 82c. In addition to the above-mentioned transfer _, the bottom of the control is connected to the monitor L; ^ is connected to the monitoring coating outflow nozzle 79 at the other end. (4) The cylinder (10)' is supplied to the monitor coating outflow nozzle 79 by the immersion nozzle 79 from the tank 77 by the operation of the cylinder 8G to supply the dilute diluted diluted resist liquid. Further, an opening and closing valve 81 is provided in the duct 78.抗, / ft control coating with the outflow mouth 79 out of the anti-sand liquid is monitored and applied in the spring? Coating body, = such as paving or glass substrate. In addition, in the vicinity of the monitoring coating, the distribution of the film is provided with a film (four) fixing device 85, which is formed by the monitoring coating, and the coatings of the coatings 63, 66, 74, 8G, and 84 can be used. The field is generally used, the wind phase π is the scale, the diaphragm η is the Diaphragm Pump, the injection 咋 筒 cylinder, and the like. Including the control of the anti-surname liquid supply system, the control of the resist coating device =T) 23a is performed by the controller 9A. The controller 9 performs control of the above-mentioned cylinders, 66, 74, 80, 84 and control of all valves, and can also control other components such as drive mechanisms. For the anti-liquid supply, based on the result of the measurement of the film thickness stagnation device 85 of the film formed by the above-mentioned coating, the high concentration of the resist liquid in the resist liquid tank 61 is controlled by ^= and 66'. Further, the mixing ratio of the release agent or the like in the solvent tank 64 can be finely adjusted, and the supply destination of the diluted resist liquid after mixing and dilution can be controlled. The controller 90 is controlled by the upper processing controller 92, which controls the resist coating and development processing system 1 of the upper level. The controller 90 and the processing controller 92 are composed of a computer. The processing controller 92 controls the respective components of the resist coating and development processing system 100 by controlling the cylinder and the valve like the controller 9 described above. The processing controller 92 is connected to the user interface 93, and the keyboard is commanded by the engineering manager to manage the resist coating and developing system 100, or the anti-surname agent is applied to the operation state of the 1313623 cloth development system 100. A display such as a display that is visible. Further, the control unit 92 is connected to the memory unit 94, and stores various control processes executed by the resist main cloth/developing system 100 by the control unit of the processing controller 92, or by using the interactive domain condition* In the construction of the plasma side of the device, the wealth of processing, but also the edpe). The stored recipe also includes controls such as the cylinder and valve performed by the controller 90 described above. The recipe can be stored in a hard disk or a semiconductor memory, or can be set in the memory unit 94 in a state of being stored in a portable memory medium such as a DDROM or a DVD.
的g ό也可為從其他裝置,例如藉著專用線路將配方適 並且’視需要,可藉著以來自制者界面93之指示等將 =方從記卿94叫A並讀理控 92執行,崎處理控制器 92之控制下在抗蝕劑塗布·顯影系統進行所望之處理。 其次,對於以上方式所構成之抗蝕劑塗布裝置(CT)23a中的 處理動作加以説明。 執12各部之中基板G能浮起既定高度之狀態,從 ::處=早^塊(ΤΒ)32之通料元齡雜輸賴構使基板〇 能入脾Ϊ部123 ’在基板G之一部分還藉由滾動而支持之狀 I、,將基板G之γ方向端保持在基板保持構件5U、训 起狀t之基板G搬入台座12之導入台座部i2a。 當基板G通過配置在既定位置之抗蝕劑供給喷嘴i4之下時, 從抗蝕劑供給噴嘴14對基板G表面供給抗蝕劑液,並形成塗布膜。 ―以二:對於抗侧液塗布處理之步騍,邊參照圖6之流程圖 邊加以說明。 育先’從貯存有高濃度抗蝕劑液之高濃度抗蝕劑液槽61及貯 存有稀釋抗_液之賴,例如稀_之溶麵64,將 蝕劑液及溶劑以既定比例供給予混合部7〇(步驟丨)。此時之高 ^餘劑液與劑之比例,規定在配方,基於該資訊藉著處理控^ 器92控制器90對南漢度抗餘劑液π即筒63、溶劑π即筒66輸出指 22 1313623 令。 被供給予混合部70之高濃度抗餘劑液及溶劑藉著會合區塊 ^及靜態混合器68混合,成為充分混合狀態之稀釋抗蚀劑液(步 2)。並且,開啟閥75c,關閉閥75a、75b,並開啟閥83c,關閉 j 81,使循環用唧筒84驅動,構成經過導管69、監控用抗餘 峡^二7、導管82C、送回導管82、及三向閥76再通到導管69之 =衣蓄線,使彳于以上述方式咼濃度抗姓劑及溶劑混合所形成之 释抗蝕劑液循環(步驟3)。The g ό can also be adapted from other devices, for example, by a dedicated line and as needed, by means of the instructions of the self-made interface 93, etc., the party will be called A from Ai Qing 94 and read by the control 92. The desired processing is performed in the resist coating and developing system under the control of the processing controller 92. Next, the processing operation in the resist coating apparatus (CT) 23a configured as described above will be described. In the state where the substrate G can float at a predetermined height, the material of the substrate G can be floated to the spleen and the spleen 123' on the substrate G. In part, the substrate G held in the gamma direction end of the substrate G and the substrate G held in the urging shape t are carried into the introduction pedestal portion i2a of the pedestal 12 by the rolling. When the substrate G passes under the resist supply nozzle i4 disposed at a predetermined position, the resist liquid is supplied from the resist supply nozzle 14 to the surface of the substrate G to form a coating film. ―2: For the step of the anti-side liquid coating treatment, it will be described with reference to the flowchart of Fig. 6. The first step is to supply the solution liquid and the solvent in a predetermined ratio from the high-concentration resist liquid tank 61 in which the high-concentration resist liquid is stored and the diluted anti-liquid solution, for example, the diluted surface 64. The mixing unit 7〇 (step 丨). At this time, the ratio of the high liquid to the agent is specified in the formula, and based on the information, the controller 58 is used to control the residual agent liquid π, the cylinder 63, the solvent π, the tube 66 output finger. 22 1313623 Order. The high-concentration anti-residue liquid and the solvent to be supplied to the mixing unit 70 are mixed by the rendezvous block and the static mixer 68 to form a diluted resist liquid in a sufficiently mixed state (step 2). Further, the valve 75c is opened, the valves 75a and 75b are closed, the valve 83c is opened, the j 81 is closed, and the circulation cylinder 84 is driven to constitute a passage 69, a monitoring anti-aftershoke 2, a conduit 82C, a return conduit 82, And the three-way valve 76 is re-routed to the conduit 69 of the conduit 69 to circulate the resist solution formed by mixing the anti-surname agent and the solvent in the above manner (step 3).
μ接著,開啟閥81 ’藉由使監控塗布用㈣80驅動,從構成循 ^ 1線之控用緩衝槽77取出稀釋抗姓劑液,並供給予監控塗 ^出喷嘴79,從監控塗布用流出喷嘴79流出混合液(抗钕劑 =控塗布,並測定監控用塗布膜之膜厚(步驟4)。該監控塗 膜膜,可作為高濃度抗侧液與溶劑配合比例之指標的參數。 ,步驟可以用如圖7、8所示步驟進行。圖7之例係從監控 二出噴嘴79將稀釋抗姆,丨液對輥筒%供給並於輥筒%上开 t Iff,加熱處理(圖7之⑻),之後,以膜厚測定裝置85測 ί ^圖7 t監控用塗布膜膜厚(圖7之⑽,之後清洗輥 抛絲板96上供給並纽絲板96上形成 理⑽8之⑻),讀,賴厚贼裝㈣測定形成在 /If、,監:控Λ塗布膜膜厚(圖8之(b)),之後清洗破璃基 —〜(C))。5亥專監控塗布進行時,由於剛開始塗布後之膜 讀鍋败在後半 及膜ί測^可藉由®9或圖ig所轉送帶之裝置來進行監控塗布 ,9 ^震置係為’例如將鋼製傳送帶ι〇ι掛設在上部 部觀筒104、105 ’並在其中之一上部輥筒脱之正 上方配置1^控塗布用流出喷嘴79,在另-上雜筒1G3之正上方 23 1313623 等之間,帶1〇1能通過之方式, 稀釋劑等溶劑所構成清洗液之清洗槽1〇7,傳 輥ft 102 ΪίΓ,配ί ΐϊ,内之清洗液。下部輕筒105與上部 視同1〇2巧配置有噴霧沖洗噴嘴1〇8、氣體吹 於像這種裝置之巾’係藉由未圖 滅 蝕劑液流出到傳送帶1〇t 出喷嘴79將稀釋抗 置_使塗布膜乾燥,並藉f^、型減壓乾燥裝 乾燥:接著,進行次體吹風喷嘴赠吹送氣體來 乃進行之塗布二1由於監控塗布用流出喷嘴 由於膜厚測定裝置85也設置在 ^易^缺二(_控制。又, 彎折等之影響,安定的以古件声3—上方,能不受傳送帶1〇ι 乾燥裝請之減壓的可;定。再者,小型減壓 壓,:= 來將進行::===)23b之減 而使完全乾燥者。藉此為藉著設置加熱器no 又,由於加熱器m使傳,能使精度更加提高。 以上係對抗蝕劑液15110改為配置烘箱。 但是也可以如圖n〜13下/則疋塗布膜之例加以説明, 圖U之例中,從龄,测定濕狀態膜厚之經時變化。 ,筒95,而在輥ί9工5上將^^液供給予 態藉著膜厚測定梦_、、目;膘(圖11之⑷)’之後’於濕狀 (2點以上X圖u ^ =该^;親筒95上之塗布膜經時變化 ())之後,>月冼輥筒95(圖11之(c))。圖12 24 1313623 控Λ布用流时嘴79將稀釋抗_液對小型玻璃基 .以議之後, .=化(2點以上),(-之⑽ 圖13之裝置係從圖9之裝置去掉減壓 =布Hi时嘴79將娜織舰供給轉而= 塗布膜,之後’於濕狀態測定膜厚之經時變化。 上而形成 濕膜厚之經時變化例如圖14之圖 演算法來計算溶劑揮發後之乾燥膜厚如果炉用適當 正確光學常數及形成膜厚,則此”對象膜之 測膜厚。 J个响在供烤則、後’能同時顯示預 又,於上述圖9之裝置之監控塗布及膜厚測定一、*虫 蒸發稀釋抗_液中之溶劑無法完ί 而從圖軸厚之經時變化, 控制器9。,厚測定數據被送到 驟5)。 U觸疋否在既定之膜厚範圍(步 當判斷在既定範圍之情形,藉由關 抗_液供給機構供給稀釋抗钱劑,H :、開啟閥75a,對 2首先,對緩衝槽71a及71b其中之驟6之 、,’。稀釋抗蝕劑液。緩衝槽71a能## 緩衝槽71a内供 80叫之稀釋抗_液%匕片基板塗布所需量(例如 稀釋抗_液通過it次由=:7予6;=動, 供予實際對基板g塗布抗餘劑液。又,i備’並 於緩衝槽71b事先貯存濂釋轱舳豳丨> +備-人一基板塗布,藉由 25 1313623 另-方面,於上述步驟5判定脫出既定膜厚細 處理控制器92藉著控制器90而對高濃度抗 , = 將回》辰度抗蝕劑液與溶劑以變更後之比例供給予混人 ,70之會合區塊67及靜態混合器68混合,並對^經ς 2釋抗侧液,進行上述步驟3循_循環管線及“ 4 度再度,進行步驟5之判斷。通常,: 杆ί漠度罐’由_厚敎可在5秒左右的短期間進Then, the opening valve 81' is driven by the monitoring coating (4) 80, and the diluted anti-surname liquid is taken out from the control buffer tank 77 constituting the line 1 and supplied to the monitoring coating nozzle 79 to flow out from the monitoring coating. The nozzle 79 flows out of the mixed solution (anti-caries agent = controlled coating, and the film thickness of the coating film for monitoring is measured (step 4). The monitoring coating film can be used as a parameter for the ratio of the high-concentration anti-side liquid to the solvent. The steps can be carried out by the steps shown in Figures 7 and 8. The example of Fig. 7 is to dilute the anti-mite from the monitoring two-out nozzle 79, and the sputum is supplied to the roller % and opened on the roller % t Iff, heat treatment (Fig. 7 (8)), after that, the thickness of the coating film for monitoring is measured by the film thickness measuring device 85 (Fig. 7 (10), and then the cleaning roller is provided on the wire drawing plate 96 and formed on the wire plate 96 (10) 8 (8)), read, lie thick thief equipment (four) measurement formed in / If, supervision: control coating film thickness (Fig. 8 (b)), after cleaning the glass base - ~ (C)). When the 5 Hai special monitoring coating is carried out, the film reading pot after the first coating is defeated in the second half and the film can be monitored and coated by the device transferred by the ®9 or ig. For example, a steel conveyor belt ι〇ι is hung on the upper portion of the cylinders 104, 105' and one of the upper rollers is disposed directly above the control roller for dispensing, and the other is the upper nozzle 1G3. Between the top 23 1313623 and so on, the cleaning solution can be passed through the cleaning solution 1〇7, the transfer roller ft 102 ΪίΓ, and the cleaning solution. The lower light tube 105 is disposed with the spray rinsing nozzle 1 〇 8 and the gas is blown onto the towel like this device. The flow is discharged to the conveyor belt 1 〇t out of the nozzle 79. Dilution resistance _ The coating film is dried, and dried by a dry-pressure drying apparatus: followed by a coating process by applying a blowing gas to the secondary air blowing nozzle. Also set in the ^ easy ^ lack two (_ control. Also, the impact of bending, etc., stable to the ancient parts sound 3 - above, can be free from the conveyor belt 1 〇 dry drying please decompression; , small decompression pressure, := will be carried out::===) 23b minus to make it completely dry. In this way, by providing the heater no, the heater m can be transmitted, and the accuracy can be further improved. In the above, the resist liquid 15110 is changed to an oven. However, as an example of the coating film of the 疋 coating layer as shown in Figs. 7 to 13, the film thickness in the wet state may be measured from the age of Fig. U. , the cylinder 95, and on the roller 99 work 5 will be the liquid supply state by the film thickness measurement dream _,, the eye; 膘 (Fig. 11 (4)) 'after 'in the wet (2 points or more X map u ^ = the ^; after the coating film on the cylinder 95 changes with time ()), > the 冼 roll 95 (Fig. 11 (c)). Figure 12 24 1313623 Control cloth with flow nozzle 79 will dilute anti-liquid to small glass base. After discussion, .= (more than 2 points), (- (10) Figure 13 device is removed from the device of Figure 9. Decompression = cloth Hi when the mouth 79 is supplied to the Nai Weaving Ship = = coating film, and then the film thickness is measured in the wet state over time. The temporal change of the wet film thickness is formed, for example, the algorithm of Fig. 14 Calculate the dry film thickness after the solvent is volatilized. If the furnace uses the appropriate correct optical constant and the film thickness is formed, the film thickness of the target film is measured. J is ringing for baking, and then 'can be displayed at the same time. Monitoring coating and film thickness measurement of the device 1. The solvent in the anti-liquid solution of the insect evaporation is incomplete and changes from the axial thickness of the figure, the controller 9. The thickness measurement data is sent to the step 5). Whether the touch is in the range of the predetermined film thickness (when the judgment is within the predetermined range, the dilution anti-money agent is supplied by the anti-liquid supply mechanism, H:, the valve 75a is opened, and the pair 2 is first, the buffer grooves 71a and 71b In the sixth step, '. dilute the resist liquid. The buffer tank 71a can ## buffer tank 71a for 80% of the dilution anti-liquid% The amount required for coating the substrate is as follows (for example, the dilution anti-liquid is passed by ==7 to 6; =, the actual application is applied to the substrate g to apply the anti-surplus liquid. Further, it is stored in the buffer tank 71b.轱舳豳丨 轱舳豳丨 + 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人 人The back-receiving resist liquid and the solvent are supplied to the mixed ratio in a modified ratio, and the 70 meeting junction block 67 and the static mixer 68 are mixed, and the anti-side liquid is released from the ^2, and the above step 3 is performed. _Circulating the pipeline and "4 degrees again, proceed to the judgment of step 5. Usually, the rod の desert tank" is _ thick 敎 can be entered in a short period of about 5 seconds
板,,為丨分鐘左右,則能在習知之片J H度,。因此’能對基板逐片地進行濃度期, 以逐批地進行濃度調整的方式進行。 *、、'也月b 劑線r於將抗触 能掌握稀二 === 、土於》亥、、、口果月匕適當地控制配合比例, =译由於能在抗蝕劑液塗布期間進行次使2」二; 的滚度調整:因此不會使生產量降低。”使用之抗餘劑液 ·5ΓΗ^Ρ3 7/:田緩衝槽71a或71ί?之抗钱劑液不在既定濃声之产带, 84 833 ^ 83' ' 次,膜厚測定ί置基板^片之塗布時間中1 *鐘測定2 塗布用流出喷^之°從監控用緩衝槽77到監控 倍,故將監控用緩‘ ’由於取代量為約3 ㈣//之合I疋為60mL。又,靜態混合器邰 26 1313623 之容積如果定為心卜循環管線之 以循環用_ 84循環之量,考為編,則必需 控用緩衝槽77之容量6〇mlΡ ^ 84=谷量編1、監 方式,於1分鐘進行膜厚測定2’次· . =84.9m1。像上述 補正量供給時間假定為3秒時 自,Μ或66之校 環之時間,成為i分師上二:84使循 秒^^秒使上= f 裏2次。因此,需於44 上述假定係假定現實的條件者,m為環 519mm/秒也是現實的數値,因此,可8=流速。、即 分地實現抗蝕劑液濃度調整。 〜^上述線上方式充 上述ΐ施述實_態’可做各種變形。例如,於 給喷嘴供給^長尺狀之抗餘劑供 物齡布之情形、雜塗布之情形,無庸贅述, 膜厚二液與溶劑之配合比例的指標係使用塗布膜 ,但是也可適用聚醯二= 玻璃—為例,但是:庸體,使用lcd用 適用。 疋…、庸負迷地,丰導體晶圓等、其他基板也可 【圖式簡單說明】 右明—實施形態之具備抗_塗布裝置之抗韻劑塗 布•顯影處理糸統概略平面圖。 圖2係顯示本㈣—實施職之抗_塗布裝置之概略 圖。 (s ) 27 1313623 圖3係顯示本發明一實施形態之抗蝕劑塗布裝置之基板輪送 機構之概略構成剖面圖。 圖4係顯示本發明一實施形態之抗蝕劑塗布裝置之抗蝕 給喷嘴概略立體圖。 圖5為本發明一實施形態之抗蝕劑塗布裝置之中抗蝕劑液供 給系與控制系一起顯示之概略構成圖。 圖6係顯示抗蝕劑液塗布處理之步驟的流程圖。 圖7係顯示在輥筒上監控塗布稀釋抗蝕劑液,並測定乾燥狀 態之監控塗布膜膜厚之步驟。 △圖8係顯示於玻璃基板監控塗布稀釋抗蝕劑液,並測定乾燥 狀態之監控塗布膜膜厚之步驟。 ’、 ,9係顯示於移_傳送帶上監控塗布稀釋抗賴並測定乾 燥狀態之監控塗布膜膜厚之裝置例。 祕ΠίίΓΓ雜的傳送帶上監控塗布稀釋抗_並測定乾 燥狀態之監控塗布膜膜厚之裝置另一例。 二在'筒上監控塗布稀釋抗餘劑液,並由濕狀態之 孤控$布膜斯之辦變化得到監布賴厚之步驟。 之璃f板監控塗布稀釋抗蝕劑液,並由濕狀態 之膜厚之_變化得到監控塗布膜膜厚之步驟。 監㈣布轉抗賴並測定濕 圖14係顯示濕臈厚之經時變化例。 【主要元件符號說明】 G基板 C匣盒 TITLER字幕產生器 EE周邊曝光裝置 1匣盒站 28 1313623 2處理站 3界面站 4曝光裝置 9載置台 10輸送路 11輸送裝置 11a輸送臂 12台座 12a 導入台座部 12b 塗布台座部 12c搬出台座部 13基板輸送機構 14塗布液流出機構,抗蝕劑供給喷嘴 14a箱體 14b抗蝕劑流出口 15喷嘴清洗單元 16氣體喷射口 19基板輸送臂 20喷嘴移動機構 21擦磨清洗處理單元(SCR) 22準分子UV照射單元(e-UV) 23抗蝕劑處理單元 23a抗蝕劑塗布裝置(CT) 23b減壓乾燥裝置(VD) 24顯影處理單元(DEV) 25i線UV照射單元(i-UV) 26第1熱處理單元部 27第2熱處理單元部 28第3熱處理單元部 29 1313623 30縱驅動機構 31 熱處理單元區塊(TB) 32 熱處理單元區塊(TB) 33第1輸送裝置 34熱處理單元區塊(TB) 35熱處理單元區塊(TB) 36第2輸送裝置 37熱處理單元區塊(TB) 38處理單元區塊(TB) 39第3輸送裝置 40 空間 41穿梭裝置 42輸送裝置 42a輸送臂 43 緩衝台座(BUF) 44延伸•冷卻台座(EXT · COL) 45外部裝置區塊 47頂升銷 48吸附墊 49台座部 50連結構件 51a基板保持構件 51b基板保持構件 52a直線引導構件 52b直線引導構件 53X軸驅動機構 54支柱構件 55支柱構件 56橫驅動機構 30 1313623 61高濃度抗蝕劑液槽 62導管 63 即筒 64溶劑槽 65 導管 66 D即筒 67會合區塊 68靜態混合器 69稀釋抗蝕劑液饋送導管 69a導管 69b導管 69c導管 70 混合部 71a緩衝槽 71b緩衝槽 72a導管 72b導管 73 導管 74唧筒 75a開閉閥 75b開閉閥 75c開閉閥 76三向閥 76a開閉閥 76b開閉閥 77監控用緩衝槽 78監控用導管 79監控塗布機構,監控塗布用流出喷嘴 80唧筒 31 1313623 81開閉閥 82 送回導管 82a導管 82b導管 82c導管 83a開閉閥 83b開閉閥 83c開閉閥 84唧筒 85膜厚測定裝置 90控制機構,控制器 92控制機構,處理控制器 93使用者界面 94 記憶部 95輥筒 96玻璃基板 100抗蝕劑塗布·顯影處理系統 101傳送帶 102上部輥筒 103上部輥筒 104下部輥筒 105下部輥筒 106減壓乾燥裝置 107清洗槽 108喷霧沖洗喷嘴 109 氣體吹風喷嘴 110加熱器 111 冷卻吹風喷嘴 118頭掃描機構 32 1313623 120喷嘴清洗頭The board, for about a minute, can be used in the conventional film J H degree. Therefore, the concentration period of the substrate can be performed piece by piece, and the concentration adjustment can be performed batch by batch. *,, 'also the monthly b agent line r in the anti-touch ability to master the dilute two ===, the soil in the "Hai,", the mouth of the month, the appropriate control of the proportion, = translation due to the coating during the coating The rolling adjustment of 2" 2 is performed twice: therefore, the production amount is not lowered. "Residual anti-fat solution used·5ΓΗ^Ρ3 7/: The anti-money solution of the buffer tank 71a or 71ί? is not in the established production zone, 84 833 ^ 83' ' times, the film thickness is measured. In the coating time, the measurement time of 1 * is 2, and the flow rate of the coating for the coating is from the monitoring buffer tank 77 to the monitoring frequency. Therefore, the monitoring amount is about 60% due to the substitution amount of about 3 (four) / /. If the volume of the static mixer 邰26 1313623 is set to circulate for _ 84 cycles, it is necessary to control the capacity of the buffer tank 77. 6〇mlΡ ^ 84=谷量编1 In the mode of measurement, the film thickness is measured in 1 minute. 2' times · . = 84.9 m1. The time when the correction amount supply time is assumed to be 3 seconds, the time from the ring of the Μ or 66 is the second division of the division: 84 Steps ^^ seconds make up = f in 2 times. Therefore, it is necessary to assume the actual condition at 44. The m is a ring of 519 mm/sec, which is also a realistic number. Therefore, 8 = flow rate. The concentration of the resist liquid is adjusted. The above-mentioned line method is filled with the above-mentioned "state" and can be variously deformed. For example, the nozzle is supplied with a long ruler. When the residual agent is supplied with the age of the cloth and the case of the miscellaneous coating, it is needless to say that the ratio of the ratio of the film thickness to the solvent is a coating film, but it is also applicable to the polypyrene 2 = glass as an example, but: It is suitable for use with lcd. 疋..., fascinating, ferroconductor wafers, etc., other substrates can also be [simplified in the drawing] 右明—the anti-diffuse coating and development processing system with anti-coating device Fig. 2 is a schematic view showing the anti-coating device of the present invention. (S) 27 1313623 FIG. 3 is a schematic cross-sectional view showing a substrate transfer mechanism of a resist coating apparatus according to an embodiment of the present invention. Fig. 4 is a schematic perspective view showing a resist supply nozzle of a resist coating apparatus according to an embodiment of the present invention. Fig. 5 is a resist liquid supply system and a control system in a resist coating apparatus according to an embodiment of the present invention. Fig. 6 is a flow chart showing the steps of the resist liquid coating treatment. Fig. 7 is a view showing the monitoring of the coated coating film by measuring the coating of the diluted resist liquid on the roll and measuring the dry state. Step △ Figure 8 shows the step of monitoring the coating of the diluted resist liquid on the glass substrate and measuring the film thickness of the coating film in the dry state. ', , 9 series are displayed on the shift conveyor to monitor the coating dilution and measure An example of a device for monitoring the film thickness of a coating film in a dry state. Another example of a device for monitoring the coating film thickness on a conveyor belt for monitoring and drying, and measuring the film thickness of the coating film in a dry state. And the change of the wet state of the control of the cloth film to obtain the step of the supervision of the thick layer of the step. The glass plate monitoring and coating of the diluted resist liquid, and the film thickness of the wet film is monitored to obtain the thickness of the film. step. Supervision (4) Closing and Resisting and Measuring Wet Figure 14 shows an example of the change over time of wet and thick. [Description of main component symbols] G substrate C cassette TITLER subtitle generator EE peripheral exposure device 1 cassette station 28 1313623 2 processing station 3 interface station 4 exposure device 9 mounting table 10 transport path 11 transport device 11a transport arm 12 pedestal 12a Base portion 12b Coating pedestal portion 12c Carrying pedestal portion 13 Substrate conveying mechanism 14 Coating liquid outflow mechanism, Resist supply nozzle 14a Case 14b Resist flow outlet 15 Nozzle cleaning unit 16 Gas ejection port 19 Substrate transfer arm 20 Nozzle moving mechanism 21 scrub cleaning processing unit (SCR) 22 excimer UV irradiation unit (e-UV) 23 resist processing unit 23a resist coating device (CT) 23b vacuum drying device (VD) 24 development processing unit (DEV) 25i line UV irradiation unit (i-UV) 26 first heat treatment unit portion 27 second heat treatment unit portion 28 third heat treatment unit portion 29 1313623 30 vertical drive mechanism 31 heat treatment unit block (TB) 32 heat treatment unit block (TB) 33 first conveying device 34 heat treatment unit block (TB) 35 heat treatment unit block (TB) 36 second conveying device 37 heat treatment unit block (TB) 38 processing unit block (TB) 39 third conveying device 40 space 41 shuttle Device 42 Conveying device 42a Transport arm 43 Buffer pedestal (BUF) 44 extension • Cooling pedestal (EXT · COL) 45 External device block 47 Top lift pin 48 Adsorption pad 49 Seat portion 50 Connecting member 51a Substrate holding member 51b Substrate holding member 52a Linear guide member 52b linear guide member 53X shaft drive mechanism 54 strut member 55 strut member 56 cross drive mechanism 30 1313623 61 high concentration resist liquid tank 62 duct 63 ie barrel 64 solvent tank 65 conduit 66 D, cylinder 67 rendezvous block 68 Static mixer 69 diluted resist liquid feed conduit 69a conduit 69b conduit 69c conduit 70 mixing portion 71a buffer tank 71b buffer tank 72a conduit 72b conduit 73 conduit 74 cylinder 75a opening and closing valve 75b opening and closing valve 75c opening and closing valve 76 three-way valve 76a opening and closing valve 76b opening and closing valve 77 monitoring buffer tank 78 monitoring conduit 79 monitoring coating mechanism, monitoring coating outflow nozzle 80 cylinder 31 1313623 81 opening and closing valve 82 returning conduit 82a conduit 82b conduit 82c conduit 83a opening and closing valve 83b opening and closing valve 83c opening and closing valve 84 cylinder 85 film thickness measuring device 90 control mechanism, controller 92 control mechanism, processing controller 93 user interface 94 memory portion 95 roller 96 glass substrate 100 resist coating and development processing system 101 conveyor belt 102 upper roller 103 upper roller 104 lower roller 105 lower roller 106 vacuum drying device 107 cleaning tank 108 spray washing nozzle 109 gas blowing nozzle 110 heater 111 cooling blow nozzle 118 head scanning mechanism 32 1313623 120 nozzle cleaning head
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JP2007072138A (en) * | 2005-09-06 | 2007-03-22 | Tokyo Ohka Kogyo Co Ltd | Method for manufacturing resist liquid and resist film using same |
JP4704228B2 (en) * | 2005-09-06 | 2011-06-15 | 東京応化工業株式会社 | Resist solution supply device and remodeling kit for obtaining the resist solution supply device |
WO2009133621A1 (en) * | 2008-05-01 | 2009-11-05 | 長瀬産業株式会社 | Resist liquid diluting apparatus and method of diluting resist liquid |
JP5404364B2 (en) | 2009-12-15 | 2014-01-29 | 株式会社東芝 | Semiconductor substrate surface treatment apparatus and method |
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JPH1099765A (en) * | 1996-09-27 | 1998-04-21 | Hitachi Chem Co Ltd | Adjustment method of recovered cating liquid, adjusting device of recovered coating liquid and coating machine |
JP3333121B2 (en) * | 1996-12-25 | 2002-10-07 | 東京エレクトロン株式会社 | Coating device |
JP3410342B2 (en) * | 1997-01-31 | 2003-05-26 | 東京エレクトロン株式会社 | Coating device |
JP4335470B2 (en) * | 2000-03-31 | 2009-09-30 | 東京エレクトロン株式会社 | Coating device and mixing device |
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JP2004216210A (en) * | 2003-01-09 | 2004-08-05 | Sony Corp | Device and method of film formation |
JP4194541B2 (en) * | 2004-08-05 | 2008-12-10 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, and liquid state detection apparatus |
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