JP2003257833A - Liquid processing method and device thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a liquid processing method and a device which are capable of restraining liquid processing marks such as water marks from being formed on a substrate. <P>SOLUTION: A resist application/developing system 100 is equipped with a developing unit (DEV) 24, and the developing unit (DEV) 24 is provided with a drying zone 24g that carries out a drying operation for a substrate G by the use of air knives 54a and 54b after the substrate G is subjected to a rinse process. In the drying zone 24g, flows of air spouted out from the air knives 54a and 54b are so regulated in flow rate as to form a liquid film of rinsings on the substrate G. By this setup, water marks due to uneven development or stains caused by adhesion of mist of rinsings to the substrate G can be prevented from occurring by the liquid film formed on the substrate G. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid processing apparatus for performing a liquid processing such as a cleaning processing and a developing processing on a glass substrate used for a liquid crystal display (LCD).

[0002]

2. Description of the Related Art In manufacturing an LCD, after a resist film is formed on an LCD glass substrate (hereinafter referred to as "substrate"), the resist film is exposed in accordance with a circuit pattern,
Further, a predetermined circuit pattern is formed on the LCD substrate by using a so-called photolithography technique of developing this.

For example, in the development process, while the substrate is conveyed in a horizontal posture in the horizontal direction, (1) a developer is applied to the surface of the substrate, a developer paddle is formed on the substrate and held for a predetermined time. Then, the development reaction is advanced by (2) the substrate is changed to the inclined posture and the developing solution is flown down, and (3) the rinse solution is supplied to the substrate to remove the developing solution residue, and ( 4) A method is known in which a rinsing liquid on the surface of the substrate is blown off to dry the substrate by injecting a dry gas such as air onto the substrate from the front side to the rear side in the substrate transport direction using an air knife. ing. Here, the substrate is dried with the air knife so that the rinse liquid does not remain on the substrate surface.

[0004]

However, when the dry gas is blown onto the substrate using the air knife, the rinse liquid on the surface of the substrate is scattered to generate mist, and this mist is blown out from the air knife. The dried gas sometimes adheres to a part of the substrate which has already been dried. In this case, there is a problem that a watermark or a development stain is generated in the portion where the mist is attached, and the substrate quality is deteriorated.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a liquid processing method and a liquid processing apparatus which suppress the generation of liquid processing traces such as watermarks on a substrate.

[0006]

According to the first aspect of the present invention,
A liquid processing method for performing a predetermined liquid treatment on a substrate, comprising a first step of supplying a predetermined treatment liquid to the substrate to carry out the liquid treatment while transporting the substrate in a substantially horizontal posture, and ending the liquid treatment. A second step of injecting a dry gas onto the substrate using a gas injection nozzle so that a liquid film of the treatment liquid remains on the surface of the substrate while the substrate is conveyed in a substantially horizontal posture; And a third step of evaporating the treatment liquid left on the surface of the substrate by subjecting the finished substrate to a heat treatment, the liquid treatment method being provided.

According to a second aspect of the present invention, there is provided a liquid processing apparatus for performing a predetermined liquid processing on a substrate, wherein the predetermined processing liquid is supplied to the substrate while the substrate is transported in a substantially horizontal posture. A liquid processing unit that performs a process and a gas injection nozzle that injects a dry gas onto the substrate, and conveys the substrate, which has been processed in the liquid processing unit, in a substantially horizontal posture while using the gas injection nozzle to the substrate. A dry processing unit that sprays a dry gas, and a spray amount control device that controls a flow rate of the dry gas sprayed from the gas spray nozzle so that a liquid film of the processing liquid is formed on the substrate in the dry processing unit. There is provided a liquid processing apparatus comprising:

According to the substrate processing method and the substrate processing apparatus of the first and second aspects, since the liquid film of the processing liquid is formed on the surface of the substrate on which the dry gas is blown by the gas injection nozzle, Even if mist of the processing liquid generated by spraying the dry gas onto the substrate adheres to the substrate, this mist is taken into the liquid film. This prevents the occurrence of watermarks or the like on the substrate. In addition, the amount of static electricity accumulated on the substrate is reduced by the liquid film of the processing liquid formed on the surface of the substrate, which makes the substrate less likely to be damaged. According to this substrate processing method, since it is not necessary to completely blow off the processing liquid on the substrate surface, it is possible to reduce the amount of dry gas blown out from the gas injection nozzle.

According to a third aspect of the present invention, there is provided a liquid processing method for performing a predetermined liquid processing on a substrate, which comprises supplying a predetermined processing liquid to the substrate while transporting the substrate in a substantially horizontal posture. The first step of performing the treatment, and the treatment liquid adhering to the surface of the substrate by injecting a dry gas onto the substrate using a gas injection nozzle while transporting the substrate after the liquid treatment in a substantially horizontal posture. A second step of blowing away the water, a third step of forming a water film on the surface of the substrate by supplying water vapor to the surface of the substrate after the second step, and the third step.
And a fourth step of evaporating the water content on the surface of the substrate by heat-treating the substrate after the step is completed.

According to a fourth aspect of the present invention, there is provided a liquid processing apparatus for performing a predetermined liquid processing on a substrate, wherein the predetermined processing liquid is supplied to the substrate while the substrate is transported in a substantially horizontal posture. A liquid processing unit that performs a process and a gas injection nozzle that injects a dry gas onto the substrate, and conveys the substrate, which has been processed in the liquid processing unit, in a substantially horizontal posture while using the gas injection nozzle to the substrate. The surface of the substrate by supplying water vapor to the substrate while transporting the substrate that has passed through the drying processing unit in a substantially horizontal posture, and a drying processing unit that blows away the processing liquid adhering to the substrate by injecting a drying gas. And a water film formation processing section for forming a water film.

According to the liquid processing method and the liquid processing apparatus of the third and fourth aspects, even if the mist generated when the dry gas is sprayed by using the gas injection nozzle adheres to the dried substrate. Since the water film is formed uniformly thereafter, the generation of watermarks and the like due to the mist is suppressed. This improves the quality of the substrate.

According to a fifth aspect of the present invention, there is provided a liquid processing apparatus for performing a predetermined liquid processing on a substrate, wherein the predetermined processing liquid is supplied to the substrate while the substrate is transported in a substantially horizontal posture. A liquid processing unit that performs a process and a gas injection nozzle that injects a dry gas onto the substrate, and conveys the substrate, which has been processed in the liquid processing unit, in a substantially horizontal posture while using the gas injection nozzle to the substrate. A drying processing unit that blows away a processing liquid adhering to the surface of the substrate by injecting a drying gas, and a processing liquid generated by injecting the drying gas onto the substrate in the substrate drying unit using the gas injection nozzle. So that the mist does not wrap around to the front side in the substrate transport direction, a partition plate that partitions the space on the rear side in the substrate transport direction from the space on the front side at the position where the gas injection nozzle is provided. Liquid processing apparatus characterized by,
Will be provided.

According to the liquid processing apparatus of the fifth aspect, even if the processing liquid adhering to the surface of the substrate becomes a mist when being blown off by the dry gas supplied from the gas injection nozzle, the mist is transferred to the substrate. Since it does not move to the front side in the direction, adhesion of mist to the substrate is prevented. This improves the quality of the substrate.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Here, LC
A resist coating / development processing system for continuously performing processing from formation of a resist film to development on a D glass substrate (hereinafter referred to as “substrate”) will be described as an example. Figure 1
FIG. 1 is a plan view showing a schematic configuration of a resist coating / developing processing system 100.

This resist coating / developing system 10
0 is a process including a cassette station (loading / unloading part) 1 on which a cassette C containing a plurality of substrates G is placed, and a plurality of processing units for performing a series of processes including resist coating and development on the substrate G. Station (processing unit) 2
Interface station (interface section) for transferring the substrate G between the exposure apparatus 4 and the exposure apparatus 4.
3 and 3. The cassette station 1 and the interface station 3 are the processing stations 2 respectively.
It is located at both ends of. In FIG. 1, the longitudinal direction of the resist coating / developing system 100 is the X direction,
The direction orthogonal to the X direction on the plane is the Y direction.

The cassette station 1 includes a mounting table on which the cassettes C can be arranged side by side in the Y direction, and a transfer device 11 for loading and unloading the substrate G between the processing station 2. The cassette C is transported between this mounting table and the outside. Further, the transfer device 11 includes a transfer arm 1 that can access the cassette C and the processing station 2.
1a, and is movable on the transport path 10 provided along the Y direction, which is the arrangement direction of the cassettes C.

The processing station 2 basically has two parallel rows of transfer lines A and B for transferring the substrate G extending in the X direction. From the cassette station 1 side to the interface station 3 side along the transport line A, a scrub cleaning processing unit (SCR) 21, a first thermal processing unit section 26, a resist processing unit 23, and a second thermal processing unit. Sections 27 are arranged. Also, along the transfer line B, from the interface station 3 side to the cassette station 1
The second thermal processing unit section 27, the development processing unit (DEV) 24, the i-ray UV irradiation unit (i-UV) 25, and the third thermal processing unit section 28 are arranged toward the side.

Scrub cleaning unit (SCR) 21
Excimer UV irradiation unit (e-UV) on the upper part
22 is provided. The excimer UV irradiation unit (e-UV) 22 is provided to remove organic substances on the substrate G prior to the scrubber cleaning, and the i-ray UV irradiation unit (i-UV) 25 is used to perform decolorization processing for development. It is provided.

Scrub cleaning unit (SCR) 21
Then, the cleaning process and the drying process are performed while the substrate G is transported in a substantially horizontal posture. The development processing unit (DEV) 24 also includes a substrate G, as will be described in detail later.
While being transported in a substantially horizontal posture, the developing solution application, the cleaning process after the development, and the drying process are performed. In the scrub cleaning processing unit (SCR) 21 and the development processing unit (DEV) 24, the transfer of the substrate G is performed by, for example, roller transfer or belt transfer, and the carry-in port and the carry-out port of the substrate G are on opposite short sides. It is provided.
The transfer of the substrate G to the i-ray UV irradiation unit (i-UV) 25 is continuously performed by the same mechanism as the transfer mechanism of the development processing unit (DEV) 24.

In the resist processing unit 23, the resist solution is dropped onto the substrate G held substantially horizontally, and the substrate G is rotated at a predetermined number of rotations so that the resist solution is applied to the substrate G.
A resist coating processing device (CT) 23a that spreads the entire surface to form a resist film, a reduced pressure drying device (VD) 23b that dries the resist film formed on the substrate G under reduced pressure, and a substrate G
And a peripheral edge resist removing device (ER) 23c for removing excess resist adhering to the peripheral edge of the substrate G by means of a solvent ejection head capable of scanning the four sides. In the resist processing unit 23, these resist coating processing device (CT) 23a and reduced pressure drying device (VD) 2 are provided.
A transfer arm that transfers the substrate G is provided between the peripheral resist removing device (ER) 23c and the peripheral resisting device 3b.

FIG. 2 is a side view of the first thermal processing unit section 26. The first thermal processing unit section 26 has two thermal processing unit blocks (TB) 31 and 32 configured by stacking thermal processing units that perform thermal processing on the substrate G. The thermal processing unit block (TB) 31 is a scrub cleaning processing unit (SC
R) is provided on the 21 side and the thermal processing unit block (T
B) 32 is provided on the resist processing unit 23 side, and these two thermal processing unit blocks (TB) 3
A first transfer device 33 is provided between the parts 1 and 32.

In the thermal processing unit block (TB) 31, a pass unit (PASS) 61 for transferring the substrate G in order from the bottom and two dehydration bake units (DHP) 62 for performing a dehydration bake process on the substrate G. 63, an adhesion processing unit (AD) 64 that performs a hydrophobic treatment on the substrate G is stacked in four stages. The thermal processing unit block (TB) 32 is a pass unit (PASS) that transfers the substrate G in order from the bottom.
65, two cooling units (C
OL) 66 and 67, and an adhesion processing unit (AD) 68 that performs a hydrophobic treatment on the substrate G are stacked in four stages.

The first transport device 33 includes a pass unit (P
Scrub cleaning processing unit (S
Receiving the substrate G from the CR 21; loading / unloading the substrate G between the thermal processing units; and a pass unit (PAS).
S) The substrate G is transferred to the resist processing unit 23 via the 65.

The first transfer device 33 has a vertically extending guide rail 91, an ascending / descending member 92 that ascends / descends along the guide rail, a base member 93 rotatably provided on the ascending / descending member 92, and a base member 93. A substrate holding arm 94 for holding the substrate G is provided so as to be able to move forward and backward. The elevating member 92 is moved up and down by a motor 95, the base member 93 is swung by a motor 96, and the substrate holding arm 94 is moved back and forth by a motor 97. As described above, the first transfer device 33 can be moved up and down, moved back and forth, and swung, and can access any of the thermal processing unit blocks (TB) 31 and 32.

Second thermal processing unit section 27
Are two thermal processing unit blocks (TB) configured by stacking thermal processing units that perform thermal processing on the substrate G.
It has 34 and 35. The thermal processing unit block (TB) 34 is provided on the resist processing unit 23 side, and the thermal processing unit block (TB) 35 is provided on the development processing unit (DEV) 24 side. These two
A second transfer device 36 is provided between two thermal processing unit blocks (TB) 34 and 35.

FIG. 3 is a side view of the second thermal processing unit section 27. Thermal processing unit block (T
In B) 34, a pass unit (PASS) 69 that transfers the substrate G in order from the bottom and three pre-bake units (PREBAK) that pre-bakes the substrate G.
E) 70, 71 and 72 are stacked in 4 layers. In the thermal processing unit block (TB) 35, a pass unit (PAS) that transfers the substrate G in order from the bottom.
S) 73, a cooling unit (CO
L) 74, two pre-baking units (PREBAKE) 75/76 for pre-baking the substrate G are 4
It is stacked in steps.

The second transfer device 36 includes a pass unit (P
The substrate G from the resist processing unit 23 via the ASS 69, and the substrate G between the thermal processing units.
Transfer of the substrate G to and from the development processing unit (DEV) 24 via the pass unit (PASS) 73,
Also, the substrate G is transferred to and received from the extension / cooling stage (EXT / COL) 44, which is a substrate transfer unit of the interface station 3 described later. The second transfer device 36 has the same structure as the first transfer device 33, and can access any of the thermal processing unit blocks (TB) 34 and 35.

Third thermal processing unit section 28
Are two thermal processing unit blocks (TB) configured by stacking thermal processing units that perform thermal processing on the substrate G.
It has 37 and 38. The thermal processing unit block (TB) 37 is provided on the developing processing unit (DEV) 24 side, and the thermal processing unit block (TB) 38 is provided on the cassette station 1 side. And these two thermal processing unit blocks (TB) 37 and 38
A third transfer device 39 is provided between the two.

FIG. 4 is a side view of the third thermal processing unit section 28. Thermal processing unit block (T
B) In 37, in order from the bottom, a pass unit (PASS) 77 for transferring the substrate G and three post-bake units (POBA) for performing a post-baking process on the substrate G.
KE) 78, 79, 80 are stacked in four layers.
In the thermal processing unit block (TB) 38, the post bake unit (POBAKE) 8 is arranged in order from the bottom.
1. Pass / cooling unit (PASS / COL) 82 that transfers and cools substrate G, and two post-bake units (POBAKE) 83 and 84 that perform post-baking processing on substrate G are stacked in four stages. .

The third transport device 39 includes a pass unit (P
I-line UV irradiation unit (i-U)
V) receiving the substrate G from the 25, carrying in / out the substrate G between the thermal processing units, and the path cooling unit (P
The substrate G is transferred to the cassette station 1 via the (ASS / COL) 82. The third transfer device 39 also has the same structure as the first transfer device 33, and can access any of the thermal processing unit blocks (TB) 37 and 38.

At the processing station 2, as described above,
The processing units and the transfer devices are arranged so as to form the transfer lines A and B in a row and basically in the order of processing, and the space 4 is provided between the transfer lines A and B.
0 is provided. A shuttle (substrate mounting member) 41 is provided so as to reciprocate in this space 40.
The shuttle 41 is configured to be able to hold the substrate G, and the substrate G can be transferred between the transfer lines A and B via the shuttle 41.
Will be delivered. The substrate G is transferred to and from the shuttle 41 by the first to third transfer devices 33, 36, ...
39.

The interface station 3 includes a transfer device 42 for loading / unloading the substrate G between the processing station 2 and the exposure device 4, a buffer stage (BUF) 43 for arranging a buffer cassette, and a substrate having a cooling function. It has an extension / cooling stage (EXT / COL) 44 which is a transfer part. An external device block 45, in which a titler (TITLER) and a peripheral exposure device (EE) are vertically stacked, is provided adjacent to the transport device 42. The transport device 42 is the transport arm 4
2 a, and the transfer arm 42 a loads and unloads the substrate G between the processing station 2 and the exposure apparatus 4.

In the resist coating / development processing system 100 having the above-described structure, first, the substrate G in the cassette C placed on the mounting table of the cassette station 1.
Is directly carried into the excimer UV irradiation unit (e-UV) 22 of the processing station 2 by the transport device 11, and scrub pretreatment is performed. Next, the substrate G is carried into the scrub cleaning processing unit (SCR) 21 and scrub cleaned. After the scrub cleaning process, the substrate G is unloaded to the pass unit (PASS) 61 of the thermal processing unit block (TB) 31 belonging to the first thermal processing unit section 26 by, for example, roller transfer.

The substrate G arranged in the pass unit (PASS) 61 is firstly subjected to the thermal processing unit block (T).
B) is conveyed to one of the dehydration bake units (DHP) 62 and 63 of 31 for heat treatment, and then the cooling unit (C) of the thermal treatment unit block (TB) 32.
OL) 66/67 and cooled, and then the adhesion processing unit (AD) 64 of the thermal processing unit block (TB) 31 or the thermal processing unit block (TB) to enhance the fixability of the resist. )
It is conveyed to one of the 32 adhesion processing units (AD) 68, and is subjected to the adhesion processing (hydrophobicization processing) by the HMDS there. After that, the substrate G is transported to one of the cooling units (COL) 66 and 67 and cooled, and further, the thermal processing unit block (T).
B) It is conveyed to the pass unit (PASS) 65 of 32. The transfer process of the substrate G when performing such a series of processes is all performed by the first transfer device 33.

The substrate G placed in the pass unit (PASS) 65 is carried into the resist processing unit 23 by the transfer arm of the resist processing unit 23. Board G
Is the vacuum drying device (VD) 2 after the resist solution is spin-coated in the resist coating processing device (CT) 23a.
3b, dried under reduced pressure, and further transported to a peripheral edge resist removing device (ER) 23c to remove excess resist on the peripheral edge of the substrate G. After the removal of the peripheral edge resist, the substrate G is transferred from the resist processing unit 23 by the transfer arm.
The pass unit (PA) of the thermal processing unit block (TB) 34 belonging to the second thermal processing unit section 27.
SS) 69.

The substrate G placed in the pass unit (PASS) 69 is transferred by the second transfer device 36 to the pre-bake unit (PR) of the thermal processing unit block (TB) 34.
EBAKE) 70/71/72 and thermal processing unit block (TB) 35 pre-bake unit (PREB)
AKE) 75/76 for pre-baking and then thermal processing unit block (TB) 3
5 is conveyed to a cooling unit (COL) 74 and cooled to a predetermined temperature. Then, it is further transported to the pass unit (PASS) 73 of the thermal processing unit block (TB) 35 by the second transport device 36.

Thereafter, the substrate G is transferred to the extension / cooling stage (EXT / COL) 44 of the interface station 3 by the second transfer device 36, and the peripheral exposure device (of the external device block 45 ( It is conveyed to EE) and is exposed for removing the peripheral resist. Next, the substrate G is transported to the exposure device 4 by the transport device 42, where the resist film on the substrate G is exposed to form a predetermined pattern. In some cases, the substrate G is accommodated in the buffer cassette on the buffer stage (BUF) 43 and then transferred to the exposure device 4.

After the exposure, the substrate G is transferred to the external device block 4 by the transfer device 42 of the interface station 3.
5 was loaded into the upper TITLER,
Therefore, predetermined information is written on the substrate G. Then, the substrate G
Is an extension / cooling stage (EXT / C
OL) 44, and is transported by the second transport device 36 from there to the pass unit (PASS) 73 of the thermal processing unit block (TB) 35 belonging to the second thermal processing unit section 27.

The substrate G is moved from the pass unit (PASS) 73 to the development processing unit (DEV) by operating, for example, a roller transfer mechanism extended from the pass unit (PASS) 73 to the development processing unit (DEV) 24.
It is carried in to 24 and is subjected to development processing there. This development processing step will be described in detail later.

After the development processing is completed, the substrate G is transferred from the development processing unit (DEV) 24 to the i-line UV irradiation unit (i-UV) 25 by a continuous transfer mechanism, for example, roller transfer, and the substrate G is decolorized. Is applied. After that, the substrate G is transferred to the third thermal processing unit section 28 by the roller transfer mechanism in the i-ray UV irradiation unit (i-UV) 25.
Is transferred to the pass unit (PASS) 77 of the thermal processing unit block (TB) 37 belonging to.

The substrate G placed on the pass unit (PASS) 77 is transferred to the post bake unit (PO) of the thermal processing unit block (TB) 37 by the third transfer device 39.
Bake) 78/79/80 and thermal processing unit block (TB) 38 post bake unit (POBA)
KE) 81.83.84 and post-baked, and then the thermal processing unit block (T
B) 38 pass cooling unit (PASS / CO
L) 82, and after being cooled to a predetermined temperature, the transfer device 11 of the cassette station 1 stores the predetermined cassette C in the cassette station 1.

Next, the structure of the development processing unit (DEV) 24 will be described in detail. 5 is a side view showing a schematic structure of the development processing unit (DEV) 24, and FIG. 6 is a schematic plan view. Development processing unit (DEV) 24
Is the introduction zone 24a, the first developer supply zone 24
b, the second developing solution supply zone 24c, the liquid draining / rinsing zone 24d, the first rinsing zone 24e, the second rinsing zone 24f, and the drying zone 24g. The introduction zone 24a is a thermal processing unit block (TB) 35.
Adjacent to the pass unit (PASS) 73, and the drying zone 24g is adjacent to the i-ray UV irradiation unit (i-UV) 25.

Pass unit (PASS) 73 and i-line UV
A roller transport mechanism 14 that transports the substrate G on the roller 17 in a predetermined direction by driving a motor or the like to rotate the roller 17 is provided between the irradiation units (i-UV) 25. By operating this roller transport mechanism 14, the substrate G is passed from the pass unit (PASS) 73 toward the i-ray UV irradiation unit (i-UV) 25, passes through the inside of the development processing unit (DEV) 24, and is substantially horizontal. It can be transported in a posture. A predetermined number of rollers 17 are provided in the transport direction (X direction) of the substrate G and in the Y direction perpendicular to the transport direction so that the substrate G is less likely to bend.

The roller transport mechanism 14 is not shown in FIG. In the development processing unit (DEV) 24, a plurality of roller transport mechanisms 14 that can be driven independently for each processing zone are used.
May be provided. For example, the substrate G is a pass unit (P
ASS) 73 and the introduction zone 24a are conveyed by the drive of the first motor, and between the first developer supply zone 24b and the drain / rinse zone 24d are conveyed by the drive of the second motor, and the first rinse zone Between the 24e and the drying zone 24g, it may be conveyed by driving a third motor. Such division driving of the roller transport mechanism 14 is performed by, for example, the development processing unit (DE
V) 24 may be performed for each region in which the transfer speed of the substrate G is different.

The pass unit (PASS) 73 is provided with a lifting pin 16 which can be lifted and lowered. Second holding substrate G
When the raising / lowering pin 16 is raised while the substrate holding arm 94 of the transfer device 36 has entered the pass unit (PASS) 73, the substrate G is transferred from the substrate holding arm 94 to the raising / lowering pin 16. Subsequently, when the substrate holding arm 94 is withdrawn from the pass unit (PASS) 73 and then the lifting pins 16 are lowered, the substrate G is moved to the pass unit (PASS).
S) Placed on the roller 17 in 73. Roller transport mechanism 1
The substrate G is carried out from the pass unit (PASS) 73 to the introduction zone 24 a by operating the unit 4.

The introduction zone 24a has a pass unit (PA
It is provided as a buffer region between the SS) 73 and the first developing solution supply zone 24b. This introduction zone 24a
Prevents the pass unit (PASS) 73 from being contaminated due to scattering of the developer from the first developer supply zone 24b to the pass unit (PASS) 73.

The first developing solution supply zone 24b is a zone in which the first developing solution puddle formation (paddle formation) is performed on the substrate G conveyed from the introduction zone 24a. The first developing solution supply zone 24b includes a main developing solution discharge nozzle 51a and a sub developing solution discharge nozzle 51 for applying the developing solution to the substrate G.
b (hereinafter referred to as "developing nozzles 51a and 51b"), two guide rails 59 extending in the X direction, and a slide arm 58 fitted to the guide rails 59,
It has a drive mechanism (not shown) for moving the slide arm 58 along the guide rail 59 in the X direction, and a lifting mechanism (not shown) attached to the slide arm 58. The developing nozzles 51a and 51b are attached to this elevating mechanism and can be moved up and down.

A developing solution is supplied to the developing nozzles 51a and 51b from a developing solution supply source (not shown). For example, the developing nozzles 51a
After adjusting the distance between the substrate b and the substrate G, the developing solution is discharged from the developing nozzles 51a and 51b onto the substrate G while moving the developing nozzles 51a and 51b in the direction opposite to the transport direction of the substrate G. Developer is applied to G.

The developing nozzles 51a and 51b are long in the width direction (Y direction) of the substrate G (see FIG. 6), and a slit-shaped discharge port is formed at the lower end along the longitudinal direction. A structure having a structure in which the developing solution can be discharged from the discharge port in a substantially strip shape is preferably used. As the developing nozzles 51a and 51b, instead of the slit-shaped ejection openings, for example, a plurality of circular ejection openings formed at predetermined intervals may be used.

In the first developing solution supply zone 24b, the substrate G on which the developing solution is piled up is drained / rinsed zone 24.
The developer may be spilled on the substrate G during the transportation to the d. In the second developer supply zone 24c,
In this way, in order to prevent the development reaction from being stopped due to the developer spilling from the substrate G during the transportation of the substrate G, the developer is newly applied to the substrate G so as to be supplemented with the developer.

To this end, the second developer supply zone 24
In c, a developer replenishing nozzle 51c having the same structure as the developing nozzles 51a and 51b is fixedly provided so that its longitudinal direction is the Y direction. From the developer replenishing nozzle 51c, a predetermined amount of developer is ejected in a substantially strip shape on the substrate G transported by the roller transport mechanism 14.
However, the second developing solution supply zone 24c is not essential.

The development reaction on the substrate G is carried out while being conveyed from the first developing solution supply zone 24b to the draining / rinsing zone 24d. Conversely, the transport speed of the substrate G from the first developer supply zone 24b to the drain / rinse zone 24d is determined in consideration of the time required for the development reaction.

In the drainage / rinse zone 24d,
The substrate G is converted into an inclined posture, the developing solution on the substrate G is poured down, and a rinse liquid such as pure water is discharged onto the surface of the substrate G held in the inclined posture to wash away the developing solution on the substrate G. . In order to perform such processing, the liquid draining / rinsing zone 24d holds a tilted posture with a substrate tilting mechanism (not shown) that drains the developing solution applied to the substrate G by converting the substrate G into a tilted posture. The rinse nozzle 52 for supplying a rinse liquid (pure water) for flushing the developing solution to the surface of the cleaned substrate G, the rinse nozzle arm 87 for holding the rinse nozzle 52, and the rinse nozzle arm 87 are fitted to transfer the substrate G. Guide rail 86 provided so as to extend in the direction
And the rinse nozzle arm 87 along the guide rail 86.
And a drive mechanism 88 for moving the.

The rinse nozzle 52 is moved from the upper end to the lower end of the substrate G along the surface of the substrate G held in the inclined posture by the substrate tilt mechanism.
The rinse liquid is discharged onto the substrate G from the substrate G
Rinse away the remaining developer. The movement of the rinse nozzle 52 can be performed at high speed, for example, 500 mm / sec,
Thus, the developing solution on the substrate G can be removed in a short time.

The rinse nozzle 52 is long in the width direction (Y direction) of the substrate G and discharges the rinse liquid in a substantially strip shape so that the rinse liquid is spread over the entire substrate G by one movement of the rinse nozzle 52. It is preferable. Rinse nozzle 52
The rinse liquid may be discharged in a spray form.

In the removal processing of the developing solution in the drainage / rinse zone 24d, the removal of the developing solution is not complete, and therefore, the first rinse zone 24e and the second rinse zone 24f.
In step 3, while the substrate G is being conveyed, a rinse liquid is further supplied to the substrate G to thoroughly remove the developer.

The first rinse zone 24e is provided with a plurality of rinse nozzles 53a, and the second rinse zone is also provided with a plurality of rinse nozzles 53b. Rinse nozzle 5
A predetermined number of 3a and 53b are provided on the front surface side and the back surface side of the substrate G, respectively. As the rinse nozzles 53a and 53b, it is preferable to use one that is long in the width direction (Y direction) of the substrate G and discharges the rinse liquid in a substantially strip shape so that the rinse liquid can be discharged onto the entire substrate G to be conveyed. In addition, the first rinse zone 24e and the second rinse zone 24f are 1
It is possible to configure it as a rinse zone at a location.

Substrate G that has passed through the second rinse zone 24f
In the drying zone 24g, in which the substrate G is transported, a drying gas is blown onto the front and back surfaces of the substrate G while the substrate G is transported at a predetermined speed to blow away the rinse liquid adhering to the substrate G. In order to perform such processing, the drying zone 24g has an air knife 54a for injecting air toward the substrate G to be conveyed.
54b, a blower 49 for supplying air to the air knives 54a, 54b, and the air knife 5 from the blower 49
The injection amount control device 47 for controlling the flow rate, flow velocity, wind pressure, etc. of the air supplied to the 4a and 54b, and the liquid film of the rinse liquid formed on the surface of the substrate G that has passed through the air knife 54b (hereinafter referred to as "water film"). A film thickness sensor 48 is provided for measuring the thickness.

The air knives 54a and 54b have a shape longer than the width of the substrate G, and are capable of ejecting air over the entire width of the substrate G. Also,
The air knives 54a and 54b are the air knives 54a and 54a.
The longitudinal direction of 54b is attached so as to form a predetermined angle with the substrate transport direction. As a result, the rinse liquid on the surface of the substrate G is collected at the rear edge by the dry gas blown out from the air knives 54a and 54b, and is then blown away, so that a large amount of rinse liquid remains at the edge portion of the substrate G. Can be prevented.

In order to prevent particles from being contained as much as possible in the air jetted from the air knives 54a and 54b toward the substrate G, a blower 49 or a blower pipe connecting the blower 49 and the air knives 54a and 54b. Has a built-in filter for collecting particles. The film thickness sensor 48 can measure the thickness of the water film at a plurality of locations in the Y direction. Film thickness sensor 4
As the device 8, for example, a device for measuring interference fringes appearing on the surface of the substrate G or a change in refractive index, or a CCD camera can be used.

When the drying gas is blown onto the substrate G from the air knives 54a and 54b, a part of the rinse liquid on the surface of the substrate G becomes mist and diffuses into the air. After the substrate G has been completely dried by the air knives 54a and 54b, if the mist that wraps forward in the substrate transport direction adheres to the substrate G, a watermark such as a stain occurs.

Therefore, the surface of the substrate G is not completely dried in the drying zone 24g. That is, after the drying gas is blown from the air knife 54b provided on the front side in the substrate transport direction in the drying zone 24g, the water film is left on the surface of the substrate G. The thickness of this water film is formed so thin that the rinse liquid does not spill from the substrate G. For example, the thickness of the water film is sufficient as long as the irregularities of the development pattern formed on the resist film are buried in the water film, and the thickness may be several μm to several tens μm. Moreover, it is preferable that the thickness of the water film is substantially uniform over the entire substrate G.

In the drying zone 24g, the thickness of the water film formed on the substrate G after the dry gas is blown from the air knife 54b is measured by the film thickness sensor 48, and the measurement result is transmitted to the injection amount control device 47. Then, the injection amount control device 47 causes the blower 49 to move the air knife 54 so that the thickness of the water film formed on the substrate G reaches a set value.
Controls the amount of air blown to a.54b. By such feedback control, the thickness of the water film formed on the substrate G can be made constant.

When the water film is left on the substrate G as described above, even if the mist of the rinse liquid adheres to the substrate G again, the mist is taken in by the water film, so that a watermark is generated on the substrate G. Is prevented. It is preferable that such a water film is not formed on the back surface of the substrate G. This is because when the back surface of the substrate G is wet, the traces of the rollers 17 may remain on the back surface of the substrate G, which may deteriorate the quality of the substrate G.

When a water film is formed on the surface of the substrate G,
Since it is not necessary to completely blow off the rinse liquid on the surface of the substrate G, it is possible to reduce the amount of dry gas blown out from the air knives 54a and 54b. For example, when air is used as the dry gas, if the air is sent from the blower to the air knives 54a and 54b, the operating load of the blower can be reduced. Further, since the amount of static electricity accumulated on the substrate G is reduced by the water film formed on the surface of the substrate G, it is possible to prevent the substrate G from being damaged.

After the conditions for forming the water film on the substrate G (air injection conditions from the air knives 54a and 54b) are experimentally or empirically determined so that the watermark is not generated on the substrate G, , For example, the film thickness sensor 4
The measurement of the thickness of the water film according to 8 can be carried out empirically or omitted. Further, as the air knives 54a and 54b, those having a structure capable of partially changing the flow velocity of the jetted air in the longitudinal direction are used, and the bending of the substrate G and the substrate G
In consideration of the movement form of the rinse liquid above, the air knife 5
It is possible to reduce the thickness distribution of the water film formed on the substrate G by partially changing the flow velocity of the dry gas jetted from 4a and 54b.

The substrate G which has been dried in the drying zone 24g is transferred to the i-ray UV irradiation unit (i-UV) 25 by the roller transfer mechanism 14. From there, the substrate G is a post bake unit (POBAKE) 78.79.
The water film formed on the substrate G at this time is evaporated and removed by being transported to 80 or the like and subjected to heat treatment.

Development processing unit (DEV) 24 described above
The processing of the substrate G in FIG.
The substrate G carried into (S) 73 is carried into the first developing solution supply zone 24b through the introduction zone 24a by the roller transport mechanism 14. This pass unit (PASS)
The transfer speed of the substrate G from 73 to the first developer supply zone 24b is, eg, 65 mm / sec.

Next, in the first developing solution supply zone 24b, the substrate G is held in a state of being stopped at a predetermined position, and the developing nozzles 51a and 51b are set to, for example, 240 mm.
The developing solution is applied to the surface of the substrate G while moving from the front side to the rear side in the substrate transport direction at a speed of / second. Board G
By stopping the development, the developing nozzles 51a.5
The drive control of 1b becomes easy. Further, the developer can be stably puddle on the substrate G.

The substrate G, which has been filled with the liquid in the first developing solution supply zone 24b, is carried to the second developing solution supply zone 24c at a carrying speed of, for example, 46 mm / sec by operating the roller carrying mechanism 14. . When the substrate G passes through the second developer supply zone 24c, the developer replenishment nozzle 51
The developer is replenished onto the substrate G from c, and the developer spilled from the substrate G when the substrate G is transported is replenished.

The substrate G transported to the second developing solution supply zone 24c is further transported to the draining / rinsing zone 24d, where the substrate G is converted into an inclined posture and the developing solution on the substrate G is poured off. Note that the developing solution that has flowed down from the substrate G is collected and reused. Almost at the same time when the substrate G reaches the predetermined tilt angle, while the predetermined rinse liquid is being discharged from the rinse nozzle 52 toward the substrate G at a discharge amount of, for example, 20 dm ³ / min in total, the rinse nozzle arm 87 is moved toward the substrate G. Is moved along the surface of the substrate at a speed of, for example, 500 mm / sec.

Subsequently, the substrate G is transported to the first rinse zone 24e at a transport speed of, for example, 46 mm / sec, and the substrate G is transported at this transport speed while the rinse liquid is discharged onto the front and back surfaces of the substrate G. Then, the developing solution adhering to the substrate G is removed. Substrate G that has passed through the first rinse zone 24e
Is carried into the second rinse zone 24f, where it is further rinsed. The transfer speed of the substrate G in the second rinse zone 24f is slower than the transfer speed of the substrate G in the first rinse zone 24e (for example, 36 m).
m / sec) is preferred. This enables more precise rinsing processing.

Substrate G that has passed through the second rinse zone 24f
Is carried into the drying zone 24g. In the drying zone 24g, while the substrate G is being conveyed at a conveying speed of, for example, 46 mm / sec, a drying gas is blown onto the substrate G so that a water film having a predetermined thickness is formed on the surface of the substrate G from the air knives 54a and 54b. To be The substrate G, which has been processed in the drying zone 24g, is transported to the i-ray UV irradiation unit (i-UV) 25 by the roller transport mechanism 14 and subjected to a predetermined ultraviolet irradiation process.

Next, another embodiment of the drying zone 24g will be described. FIG. 7 is a side view showing another embodiment of the drying zone 24g (referred to as “drying zone 24g ′”), and FIG. 8 is a plan view thereof. Drying zone 24g '
Is a substrate drying processing unit 46a provided on the second rinse zone 24f side and an i-ray UV irradiation unit (i-UV) 25.
It has a water film formation processing part 46b provided on the side.

The substrate drying processing section 46a includes an air knife 54.
a. 54b, a blower 49, and an injection amount control device 47. These are the same as those provided in the drying zone 24g shown in FIGS. 5 and 6. In the substrate drying processing unit 46a, a process of blowing away the rinse liquid adhering to the substrate G by blowing air onto the substrate G using the air knives 54a and 54b is performed. Here, air may be jetted from the air knives 54a and 54b so that the rinse liquid adhering to the substrate G is almost completely blown off. On the other hand, in order to form a water film of a predetermined thickness on the surface of the substrate G, Air may be jetted from the knives 54a and 54b.

In the water film formation processing unit 46b, the water film is formed on the surface of the substrate G by supplying water vapor to the substrate G while transporting the substrate G that has passed through the substrate drying processing unit 46a in a substantially horizontal posture. Therefore, the water film formation processing unit 46b
A film thickness sensor 48 that measures the thickness of the water film formed on the substrate that has passed through the substrate drying processing unit 46a, and a portion where the thickness of the water film has not reached a predetermined value based on the measurement result of the film thickness sensor 48 (complete Steam supply nozzle 89a for selectively supplying steam to the steam supply nozzle 89a and a steam generator 89b for supplying steam to the steam supply nozzle 89a.
And a steam supply controller 90 for controlling the amount of steam supplied from the steam generator 89b to the steam supply nozzle 89a based on the signal from the film thickness sensor 48. The steam generated in the steam generator 89b is pressurized with nitrogen (N ₂ ) and supplied to the steam supply nozzle 89a.

The film thickness sensor 48 can measure the thickness of the water film at a plurality of points in the Y direction. Further, the steam generated in the steam generator 89b is pressurized by nitrogen (N ₂ ) to be supplied to the steam supply nozzle 89a.
Is supplied to. FIG. 9 is an explanatory diagram showing in more detail the supply form of steam to the steam supply nozzle 89a. The water vapor supply nozzle 89a includes a plurality of nozzle members 101 provided with water vapor discharge ports, which are continuously arranged in one direction.
It has a long shape in one direction.

A steam generator 89 so that steam can be separately jetted from a plurality of nozzle members 101.
Pipes for separately supplying water vapor from b to the plurality of nozzle members 101 are provided, and an opening / closing valve 102 is provided for each of these pipes. Open / close valve 102
The opening / closing operation of is controlled by the steam supply control device 90. From the water vapor outlet provided in the nozzle member 101, the water vapor is ejected in the form of a conical shower, and the substrate G
It is designed to be sprayed with water vapor.

FIG. 10 is an explanatory diagram (flow chart) showing the processing steps in the drying zone 24g '. At first,
Air is blown onto the substrate G from the air knives 54a and 54b, and the rinse liquid is blown off from the substrate G. Next, the substrate G
The thickness of the water film formed on the surface of is measured by the film thickness sensor 48.

The measurement result by the film thickness sensor 48 shows that the surface of the substrate G is in a good wet state, that is, a water film having a substantially constant thickness is formed on the surface of the good substrate G,
When the film thickness distribution of the water film also shows a substantially constant state, the substrate G is not sprayed from the steam supply nozzle 89a and the substrate G is irradiated with the i-ray UV irradiation unit (i-UV). ) Take it to 25. On the other hand, the measurement result by the film thickness sensor 48 shows that the surface of the substrate G is not wet, that is, the water film is not formed at all, or the thickness of the water film partially reaches a predetermined thickness. When there is no water vapor, or when there is a large variation in the water film thickness distribution, water vapor is sprayed from the water vapor supply nozzle 89a onto the substrate G, thereby forming a water film of a certain thickness on the substrate G. .

At this time, the water vapor supply nozzle 89a is composed of a plurality of nozzle members 101, and the water vapor can be separately ejected from each nozzle member 101. Therefore, the measurement of the film thickness sensor 48 is performed. Based on the results, steam can be sprayed only on the thin part of the water film. With this, without increasing the thickness of the entire water film,
The thickness distribution of the water film can be reduced. The substrate G on which the water film has been formed in this manner is carried out to the i-ray UV irradiation unit (i-UV) 25.

24 g of drying zone having such a constitution
When ′ ′ is used, even when the mist of the rinse liquid generated by the air blown from the air knives 54a and 54b when passing through the substrate drying processing unit 46a adheres to the dried substrate G after that. Further, since the water film is formed uniformly thereafter, it is possible to suppress the generation of watermarks and the like due to the mist.

The film thickness sensor is movable in the Y direction, and the substrate G is scanned by scanning in the Y direction.
You may use what can measure the thickness of the whole water film. Similarly, as a water vapor supply nozzle, it is movable in the Y direction, and by scanning in the Y direction, water vapor is selectively supplied to a portion where the thickness of the water film has not reached a predetermined value to form a water film. May be used.

Next, still another embodiment of the drying zone 24g will be described. FIG. 11 is a side view showing still another embodiment of the drying zone 24g (referred to as “drying zone 24g ″”). In the drying zone 24g ″, air knives 54a and 54b and a blower 49 that supplies air to the air knives 54a and 54b are provided, and at the position where the air knife 54b on the front side in the substrate transport direction is provided, Space on the rear side in the transport direction (rear space 9
9a) and a partition space 98 for partitioning the front space (front space) 99b.

In the drying zone 24g ″, air is first blown from the air knife 54a to the substrate G. Here, the portion of the substrate G blown with air from the air knife 54a (the portion passing through the air knife 54a) is blown. The amount of air injected from the air knife 54a, that is, the blower 49, so that the air is not completely dried.
The amount of air blown from the air knife 54a to the air knife 54a is controlled. As a result, even if the mist of the rinse liquid generated by blowing air from the air knife 54a onto the substrate G adheres to, for example, a part of the substrate G that is moving forward of the air knife 54a in the substrate transport direction, Since the water film remains in this portion, the generation of the watermark on the substrate G is prevented.

Air is then blown from the air knife 54b to the substrate G which has passed through the air knife 54a. At this time as well, mist of the rinse liquid is generated from the substrate G by blowing the air from the air knife 54b onto the substrate G, but since the air is jetted obliquely rearward from the air knife 54b, this mist is generated. Is
It does not diffuse into the front space 99b through the gap between the air knife 54b and the substrate G, but diffuses into the rear space 99a. Furthermore, since the mist is the partition plate 98, it goes from the rear space 99a to the front space 99b. Can't spread. In this way, it is possible to prevent the mist from adhering to the substrate G while completely drying the substrate G using the air knives 54a and 54b.

Although the embodiments of the present invention have been described above, the present invention is not limited to such embodiments. For example, in the above description, the drying zone 24
Although the case where the air is used to dry the substrate G in g has been described, the substrate G can be dried using another gas, for example, nitrogen gas. In this case, a nitrogen supply device such as a cylinder or a nitrogen supply factory pipe is used instead of the blower 49, and the nitrogen supply amount from these nitrogen supply devices to the air knives 54a and 54b is controlled by the injection amount control device 47. You can control it.

Further, in the above description, since pure water is used as the rinse liquid, a water film is formed on the substrate G to prevent the generation of watermarks on the substrate G. For example, a treatment liquid other than pure water is used. When the liquid treatment is performed by using, the vapor of the treatment liquid may be blown onto the substrate so that the film of the treatment liquid is formed on the substrate.

The present invention is not limited to being applied to LCD glass substrates, but is also applicable to liquid treatment of glass substrates used for other purposes, semiconductor wafers, other ceramic substrates and the like and accompanying drying treatment. it can.

[0090]

As described above, according to the present invention, it is possible to prevent the generation of watermarks and the like on the substrate and improve the quality of the substrate. In addition, when a liquid film of the treatment liquid is formed on the surface of the substrate, the amount of static electricity accumulated on the substrate is reduced, which makes the substrate less likely to be damaged. When the treatment liquid on the substrate surface is not completely blown to form a liquid film on the substrate, the amount of dry gas used is reduced,
It is possible to reduce the manufacturing cost.

[Brief description of drawings]

FIG. 1 is a schematic plan view of a resist coating / development processing system including a development processing unit according to the present invention.

FIG. 2 is a side view showing a first thermal processing unit section of the resist coating / developing processing system shown in FIG.

FIG. 3 is a side view showing a second thermal processing unit section of the resist coating / developing processing system shown in FIG. 1.

FIG. 4 is a side view showing a third thermal processing unit section of the resist coating / developing processing system shown in FIG. 1.

FIG. 5 is a side view showing a schematic structure of a development processing unit according to the present invention.

6 is a plan view showing a schematic structure of the development processing unit shown in FIG.

FIG. 7 is a schematic side view showing another embodiment of a drying zone constituting a development processing unit.

8 is a schematic plan view of the drying zone shown in FIG.

9 is an explanatory view showing a mode of supplying steam to a steam supply nozzle provided in the drying zone shown in FIGS. 7 and 8. FIG.

FIG. 10 is an explanatory view showing a treatment process in the drying zone shown in FIGS. 7 and 8.

FIG. 11 is a schematic side view showing still another embodiment of a drying zone which constitutes a development processing unit.

[Explanation of symbols]

1; Cassette station 2; Processing station 3; Interface station 24; Development processing unit (DEV) 24a; Introduction zone 24b; first developer supply zone 24c; second developer supply zone 24d; Drainer / rinse zone 24e; First rinse zone 24f; Second rinse zone 24g, 24g ', 24g "; Drying zone 46a: Substrate drying processing section 46b: Water film formation processing section 47; Injection amount control device 48; Film thickness sensor 49; Blower 54a ・ 54b; Air knife 89a: Water vapor supply nozzle 89b: Steam generator 90; Steam supply control device 98; Partition plate 100; Resist coating / development processing system G: LCD substrate

Claims (10)

[Claims] 1. A liquid processing method for performing a predetermined liquid treatment on a substrate, comprising a first step of supplying a predetermined treatment liquid to the substrate while carrying the substrate in a substantially horizontal posture to perform the liquid treatment, While transporting the substrate after the liquid treatment in a substantially horizontal posture, a liquid film of the treatment liquid remains on the surface of the substrate,
A second step of injecting a dry gas onto the substrate using a gas injection nozzle, and a third step of evaporating the treatment liquid left on the surface of the substrate by heat-treating the substrate after the second step. A liquid processing method comprising: 2. In the second step, the thickness of the liquid film formed on the portion sprayed with the dry gas by the gas injection nozzle so that the liquid film formed on the substrate has a predetermined thickness. The liquid treatment method according to claim 1, wherein the amount of dry gas blown out from the gas injection nozzle is adjusted based on the measurement result. 3. A liquid processing apparatus for performing a predetermined liquid processing on a substrate, comprising: a liquid processing unit for supplying a predetermined processing liquid to the substrate while carrying the substrate in a substantially horizontal posture to perform the liquid processing; A drying processing unit that has a gas injection nozzle that injects a dry gas into the liquid processing unit, and that injects the dry gas onto the substrate using the gas injection nozzle while transporting the substrate that has been processed in the liquid processing unit in a substantially horizontal posture; An injection amount control device that controls a flow rate of the dry gas injected from the gas injection nozzle so that a liquid film of the processing liquid is formed on the substrate in the drying processing unit. Liquid processing equipment. 4. The drying processing unit comprises a gas supply mechanism for supplying a predetermined amount of dry gas to the gas injection nozzle, and a processing liquid formed after the dry gas is sprayed onto the substrate from the gas injection nozzle. A sensor for measuring the thickness of the liquid film, wherein the injection amount control device has a predetermined thickness of the liquid film formed on the surface of the substrate based on the thickness of the liquid film measured by the sensor. The liquid processing apparatus according to claim 3, wherein the flow rate of the dry gas supplied from the gas supply mechanism to the gas injection nozzle is adjusted so that 5. A liquid processing method for performing a predetermined liquid processing on a substrate, comprising a first step of supplying a predetermined processing liquid to the substrate while carrying the substrate in a substantially horizontal posture to perform the liquid processing, A second step of blowing away the processing liquid adhering to the surface of the substrate by injecting a drying gas onto the substrate while transporting the substrate after the liquid processing in a substantially horizontal posture, and A third step of forming a water film on the surface of the substrate by supplying water vapor to the surface of the substrate after the two steps, and a moisture on the surface of the substrate by performing heat treatment on the substrate after the third step. And a fourth step of evaporating the liquid. 6. In the second step, the amount of dry gas blown from the gas injection nozzle is adjusted so that a liquid film of the processing liquid is formed on the surface of the substrate with a predetermined thickness, In step 3, the liquid film is formed on the substrate by measuring the thickness of the liquid film and selectively supplying water vapor to a portion where the thickness of the liquid film does not reach a predetermined thickness based on the measurement result. The liquid processing method according to claim 5, wherein the thickness of the liquid film is adjusted. 7. A liquid processing apparatus for performing a predetermined liquid processing on a substrate, comprising: a liquid processing section for supplying a predetermined processing liquid to the substrate while carrying the substrate in a substantially horizontal posture to perform the liquid processing; A substrate by injecting a dry gas onto the substrate using the gas injection nozzle while transporting the substrate that has been processed in the liquid processing section in a substantially horizontal posture, A drying treatment unit for blowing away the treatment liquid adhering to the substrate, and a water film formation for forming a water film on the surface of the substrate by supplying water vapor to the substrate while transporting the substrate passing through the drying treatment unit in a substantially horizontal posture. A liquid processing apparatus comprising: a processing unit. 8. The drying processing unit comprises a gas supply mechanism for supplying a predetermined amount of dry gas to the gas injection nozzle, and a processing liquid formed after the dry gas is sprayed onto the substrate from the gas injection nozzle. A sensor for measuring the thickness of the liquid film, and the gas from the gas supply mechanism so that the thickness of the liquid film formed on the surface of the substrate based on the thickness of the liquid film measured by the sensor becomes a predetermined thickness. The controller for adjusting the flow rate of the dry gas supplied to the injection nozzle, and the liquid processing apparatus according to claim 7. 9. The water film formation processing unit includes a sensor for measuring a thickness of a liquid film of the processing liquid formed on the substrate that has passed through the drying processing unit, and the liquid film based on a measurement result of the sensor. 9. The liquid processing apparatus according to claim 7, further comprising: a steam supply nozzle that selectively supplies steam to a portion that has not reached a predetermined thickness. 10. A liquid processing apparatus for performing a predetermined liquid processing on a substrate, comprising: a liquid processing unit for supplying a predetermined processing liquid to the substrate while carrying the substrate in a substantially horizontal posture to perform the liquid processing; A substrate by injecting a dry gas onto the substrate using the gas injection nozzle while transporting the substrate that has been processed in the liquid processing section in a substantially horizontal posture, And a mist of the treatment liquid generated by injecting a drying gas onto the substrate in the drying treatment unit by using the gas injection nozzle, and a drying treatment unit that blows away the treatment liquid adhering to the surface of the substrate. A partition wall plate that partitions a space on the rear side and a space on the front side in the substrate transport direction at a position where the gas injection nozzle is provided so as not to wrap around to the side. Processing apparatus.