JP3923057B2 - Development processing method - Google Patents

Description

  The present invention relates to a development processing method in which, for example, a predetermined developing solution is supplied to a substrate such as a liquid crystal display (LCD) glass substrate or a semiconductor wafer that has been subjected to exposure processing.

  In the photolithography process for liquid crystal display (LCD) and semiconductor devices, a photoresist film is applied to a cleaned substrate such as an LCD substrate or a semiconductor wafer to form a resist film, and the resist film is exposed in a predetermined pattern. However, a series of processes for developing this is performed. Among them, the cleaning process, the resist coating process, and the development process are performed by supplying a predetermined processing liquid while rotating the substrate in a plane by using a liquid processing apparatus generally called a spinner type.

  For example, in the development processing of an LCD substrate, the exposed substrate is placed and fixed on a spin chuck or the like, the developer is deposited on the substrate, a paddle is formed, the development reaction proceeds, and a predetermined time has elapsed. Later, when the substrate is rotated, the supply of the rinsing liquid is started almost simultaneously, the developer and the rinsing liquid are shaken off, the supply of the rinsing liquid is then stopped, the substrate is rotated at high speed, and spin drying is employed. ing.

  In one development processing unit for performing such development processing, conventionally, only one developer discharge nozzle for supplying a developer and one rinse liquid discharge nozzle for supplying a rinse liquid are provided. It was.

  However, in recent years, as the types of resists used are diversified, cases where developers of different types and concentrations have to be used are increasing. For this reason, in the conventional structure of one development processing unit-1 developer discharge nozzle, the developer discharge nozzle has to be cleaned every time the developer used is changed, and the continuous processing becomes difficult. Had reduced sex. In addition, since a plurality of developing solutions are handled by a single developing solution discharge nozzle, there are concerns about the generation of solid components and the deterioration of characteristics due to the mixing of different developing solutions, and the resulting adhesion of particles and development defects.

  Furthermore, as the pattern formed in the photolithography process becomes finer and more complicated, it is also required to perform the development process more uniformly and reduce the residue of the developer to form a good pattern. .

  The present invention has been made in view of the problems of the prior art, and provides a development processing method that makes it possible to obtain a high-quality substrate by making the development processing uniform and reducing the residue of the developer. With the goal.

In order to solve the above-described problems, the present invention provides a developing method for a substrate subjected to exposure processing, and a single nozzle holding arm that holds a plurality of developing solution discharge nozzles that discharge a predetermined developing solution to the substrate. And a developing solution supply mechanism having an elevating mechanism capable of individually adjusting the heights of the plurality of developing solution discharge nozzles, and the elevating mechanism uses the first developing to be used among the plurality of developing solution discharge nozzles. The liquid discharge nozzle is positioned at a lower position, and other unused developer discharge nozzles are positioned at an upper position close to the nozzle holding arm, and in this state, the liquid discharge nozzle is mounted substantially horizontally only from the first developer discharge nozzle. forming a developer puddle by supplying the predetermined developing solution onto the substrate in a strip while relative scanning the substrate which is, by the lifting mechanism, the first developer discharge nozzle used The is positioned above a position close to the nozzle holding arm, the other of the developing solution discharge nozzle, the second developer discharge nozzle to be used is located in the lower position, from only the developing solution discharge nozzle of the second And a step of spraying and supplying the predetermined developer onto the developer paddle formed on the substrate, and a step of continuously supplying a rinse liquid to the substrate after completion of the spray and supply of the developer. A development processing method is provided.

The present invention also relates to a method for developing a substrate that has been subjected to exposure processing, and includes a plurality of developer discharge nozzles that discharge a predetermined developer and a pre-rinse nozzle that discharges a rinse liquid onto the substrate. A developer supply mechanism comprising a nozzle holding arm and an elevating mechanism capable of individually adjusting the heights of the plurality of developer discharge nozzles and the pre-rinse nozzle, and the plurality of developer discharges by the elevating mechanism. Among the nozzles, the first developer discharge nozzle to be used is positioned at a lower position, and other developer discharge nozzles and pre-rinse nozzles that are not used are positioned at an upper position close to the nozzle holding arm, and in that state, The predetermined developer is supplied in a band shape while scanning relatively with respect to the substrate mounted substantially horizontally only from the first developer discharge nozzle, and the developer paddle is formed on the substrate. Of the other developer discharge nozzles, the second developer discharge nozzle to be used is positioned at the lower position by the elevating mechanism, and the first developer discharge nozzle and the pre-rinse nozzle are And a step of supplying the predetermined developer by spraying the developer onto the developer paddle formed on the substrate from the second developer discharge nozzle only in the upper position close to the nozzle holding arm. And a step of supplying a rinsing liquid from the pre-rinsing nozzle to the substrate continuously after the completion of the spray supply of the developing liquid.

  After the developer paddle is thus formed on the substrate, the developer is sprayed using a spray nozzle or the like, and the developer is supplied while applying pressure (impact). It progresses more uniformly. As a result, the development characteristics are improved, a clearer and more uniform pattern is obtained, and the development time is shortened.

  Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

  FIG. 1 is a plan view showing a resist coating / development processing system 100 for an LCD substrate having development processing devices (development processing units) (DEV) 24a to 24c used in the practice of the present invention.

  The resist coating / development processing system 100 includes a cassette station 1 on which a cassette C containing a plurality of LCD substrates (substrates) G is placed, and a plurality of processes for performing a series of processes including resist coating and development on the substrate G. A processing unit 2 having a unit and an interface unit 3 for transferring the substrate G between an exposure apparatus (not shown) are provided, and a cassette station 1 and an interface unit are provided at both ends of the processing unit 2, respectively. 3 is arranged.

  The cassette station 1 includes a transport mechanism 10 for transporting the substrate G between the cassette C and the processing unit 2. Then, the cassette C is loaded and unloaded at the cassette station 1. Further, the transport mechanism 10 includes a transport arm 11 that can move on a transport path 10 a provided along the cassette arrangement direction, and the transport arm 11 can transport the substrate G between the cassette C and the processing unit 2. Done.

  The processing section 2 is divided into a front stage section 2a, a middle stage section 2b, and a rear stage section 2c. Yes. In addition, relay sections 15 and 16 are provided between them.

  The front stage portion 2a includes a main transport device 17 that can move along the transport path 12, and two cleaning units (SCRs) 21a and 21b are arranged on one side of the transport path 12, and the transport path 12, the processing block 25 in which the ultraviolet irradiation unit (UV) and the cooling unit (COL) are stacked in two stages, the processing block 26 in which the heating processing unit (HP) is stacked in two stages, and the cooling unit. A processing block 27 in which (COL) is stacked in two stages is arranged.

  The middle stage 2 b includes a main transfer device 18 that can move along the transfer path 13. On one side of the transfer path 13, a resist coating processing unit (CT) 22 and a resist on the peripheral edge of the substrate G are provided. The peripheral resist removing unit (ER) 23 for removing the substrate is integrally provided, and on the other side of the conveyance path 13, the processing block 28 in which the heating processing units (HP) are stacked in two stages, the heating processing unit A processing block 29 in which (HP) and a cooling processing unit (COL) are vertically stacked and a processing block 30 in which an adhesion processing unit (AD) and a cooling unit (COL) are vertically stacked are arranged. .

  Further, the rear stage portion 2 c includes a main transport device 19 that can move along the transport path 14, and three development processing units (DEV) 24 a, 24 b, and 24 c are disposed on one side of the transport path 14. On the other side of the conveyance path 14, a heat treatment unit (HP) is stacked in two stages, and a heat treatment unit (HP) and a cooling processing unit (COL) are stacked vertically. Processing blocks 32 and 33 are arranged.

  The processing unit 2 includes only spinner units such as a cleaning unit (SCR) 21a, a resist coating processing unit (CT) 22, and a development processing unit (DEV) 24a on one side of the conveyance path. In addition, only the thermal processing unit such as the heat processing unit (HP) or the cooling processing unit (COL) is arranged on the other side.

  Further, a chemical solution supply unit 34 is arranged at a portion on the spinner system unit arrangement side of the relay units 15 and 16, and a space 35 for performing maintenance of the main transfer devices 17, 18, and 19 is further provided. .

  Each of the main transport devices 17, 18, and 19 includes a two-direction X-axis drive mechanism, a Y-axis drive mechanism, and a vertical Z-axis drive mechanism in a horizontal plane, and further, a rotational drive that rotates about the Z-axis. It has a mechanism, and each has an arm for supporting the substrate G.

  The main transfer device 17 has a transfer arm 17a, transfers the substrate G to and from the transfer arm 11 of the transfer mechanism 10, and carries in / out the substrate G to / from each processing unit of the front stage 2a, and further relays it. It has a function of delivering the substrate G to and from the unit 15. The main transfer device 18 includes a transfer arm 18a, transfers the substrate G to and from the relay unit 15, and loads / unloads the substrate G to / from each processing unit of the middle stage unit 2b. A function of delivering the substrate G between the two. Further, the main transfer device 19 has a transfer arm 19a, transfers the substrate G to and from the relay unit 16, and loads / unloads the substrate G to / from each processing unit of the rear stage unit 2c. A function of delivering the substrate G between the two. The relay parts 15 and 16 also function as cooling plates.

  The interface unit 3 includes an extension 36 that temporarily holds the substrate G when the substrate G is transferred to and from the processing unit 2, and two buffer stages 37 that are provided on both sides of the buffer unit 37 and on which buffer cassettes are disposed. A transport mechanism 38 for transporting the substrate G between these and an exposure apparatus (not shown) is provided. The transport mechanism 38 includes a transport arm 39 that can move on a transport path 38 a provided along the arrangement direction of the extension 36 and the buffer stage 37. The transport arm 39 allows the substrate G to be transferred between the processing unit 2 and the exposure apparatus. Is carried out.

  By consolidating and integrating the processing units in this way, it is possible to save space and improve processing efficiency.

  In the resist coating / development processing system 100 configured as described above, the substrate G in the cassette C is transferred to the processing unit 2, and the processing unit 2 firstly has an ultraviolet irradiation unit (UV) of the processing block 25 of the preceding stage 2 a. After the surface modification / cleaning process is performed in step S10 and the cooling process unit (COL) cools, scrubber cleaning is performed in the cleaning units (SCR) 21a and 21b. ) And then cooled by any one of the cooling units (COL) in the processing block 27.

  Thereafter, the substrate G is transported to the middle stage 2b and subjected to a hydrophobic treatment (HMDS process) in the upper adhesion processing unit (AD) of the processing block 30 in order to improve the fixing property of the resist, and the lower cooling processing unit ( After cooling by COL), a resist is applied by a resist application processing unit (CT) 22, and excess resist on the periphery of the substrate G is removed by a peripheral resist removal unit (ER) 23. Thereafter, the substrate G is pre-baked by one of the heat treatment units (HP) in the middle stage 2b and cooled by the lower cooling unit (COL) of the processing block 29 or 30.

  Thereafter, the substrate G is transported from the relay section 16 to the exposure apparatus via the interface section 3 by the main transport apparatus 19, where a predetermined pattern is exposed. And the board | substrate G is again carried in via the interface part 3, and after performing a post-exposure baking process in the heat processing unit (HP) of the process blocks 31, 32, and 33 of the back | latter stage part 2c as needed, Development processing is performed in one of the development processing units (DEV) 24a, 24b, and 24c, and a predetermined circuit pattern is formed. The developed substrate G is subjected to a post-baking process in any one of the heat treatment units (HP) in the rear stage 2c, and is then cooled in any cooling unit (COL). 18 and 17 and the transport mechanism 10 are accommodated in a predetermined cassette on the cassette station 1.

  Next, the development processing units (DEV) 24a to 24c will be described in detail. FIG. 2 is a plan view showing an embodiment of the development processing units (DEV) 24a to 24c, and FIG. 3 is a cross-sectional view of a cup portion in the development processing units (DEV) 24a to 24c shown in FIG. As shown in FIG. 2, the development processing units (DEV) 24 a to 24 c are entirely surrounded by a sink 48.

  As shown in FIG. 3, in the development processing units (DEV) 24a to 24c, a holding means for mechanically holding the substrate G, for example, a spin chuck 41 is provided so as to be rotated by a rotation drive mechanism 42 such as a motor. A cover 43 surrounding the rotation drive mechanism 42 is disposed below the spin chuck 41. The spin chuck 41 can be moved up and down by a lifting mechanism (not shown), and transfers the substrate G to and from the transfer arm 19a at the lifted position. The spin chuck 41 can suck and hold the substrate G by a vacuum suction force or the like.

  Two under cups 44 and 45 are provided around the outer periphery of the cover 43 so as to be separated from each other, and an inner cup 46 for mainly flowing the developer downward is provided above the two under cups 44 and 45. An outer cup 47 for mainly flowing the rinse liquid downward is provided on the outer side of the under cup 45 so as to be movable up and down integrally with the inner cup 46. In FIG. 3, the left side shows a position where the inner cup 46 and the outer cup 47 are raised when the developer is discharged, and the right side shows a position where they are lowered when the rinse liquid is discharged.

  An exhaust port 49 for exhausting the inside of the unit at the time of rotary drying is disposed at the bottom on the inner peripheral side of the under cup 44, and a drain for mainly discharging the developer between the two under cups 44 and 45. A drain pipe 50b is provided at the bottom of the outer cup side of the pipe 50a to mainly discharge the rinse liquid.

As shown in FIG. 2, a developer holding nozzle holding arm 51 is provided on one side of the outer cup 47, and the nozzle holding arm 51 is used for applying the developing solution to the substrate G. Paddle forming nozzles 80a and 80b, which are an embodiment of the liquid discharge nozzle, are accommodated. The nozzle holding arm 51 is configured to move across the substrate G by a driving mechanism 52 such as a belt drive along the length direction of the guide rail 53, so that the nozzle holding arm 51 is paddled at the time of applying the developing solution. The stationary substrate G while discharging the developer from the forming nozzles 80a and 80b
Is supposed to scan.

  Further, the paddle forming nozzles 80a and 80b are set on standby in the nozzle standby unit 115. The nozzle standby unit 115 is provided with a nozzle cleaning mechanism 120 for cleaning the paddle forming nozzles 80a and 80b. Yes. Details of the developer supply mechanism including the structure of the paddle forming nozzles 80a and 80b will be described later.

  A nozzle holding arm 54 for discharging a rinsing liquid such as pure water is provided on the other side of the outer cup 47, and a rinsing liquid discharging nozzle 60 is provided at the tip of the nozzle holding arm 54. As the rinse liquid discharge nozzle 60, for example, one having a pipe-shaped discharge port can be used. The nozzle holding arm 54 is slidably provided along the length direction of the guide rail 53 by the drive mechanism 56, and scans the substrate G while discharging the rinse liquid from the rinse liquid discharge nozzle 60. Yes.

  A space is formed in the upper part so that a clean downflow is supplied to the development processing units (DEV) 24a to 24c from the ceiling where the resist coating / development processing system 100 is disposed. A gas blow mechanism for supplying a dry gas such as nitrogen gas to the substrate G held on the spin chuck 41 and an ionizer for removing static electricity generated in the spin chuck 41 are provided above the substrate G, respectively. ing.

  Further, as shown in FIG. 4, a rotation drive mechanism 42 that rotates the spin chuck 41, a drive mechanism 52 that slides the nozzle holding arm 51 for the developer, and a drive that slides the nozzle holding arm 54 for the rinsing liquid. All of the mechanisms 56 are controlled by the control device 70.

  Subsequently, the developer supply mechanism related to the application from the storage of the developer to the substrate G will be described. First, the paddle forming nozzles 80a and 80b will be described in detail. For example, as shown in the perspective view of FIG. 5, the paddle forming nozzles 80a and 80b have slit-like developer discharge ports 85a and 85b, and the developer is discharged from the developer discharge ports 85a and 85b in a strip shape. Those having the structure are preferably arranged. When the nozzle holding arm 51 holding the paddle forming nozzles 80a and 80b is scanned along the guide rail 53, the developer discharge ports 85a and 85b are formed with respect to the substrate G regardless of which direction is scanned. Thus, the developer can be discharged substantially vertically.

  As the paddle forming nozzles 80a and 80b, for example, instead of the nozzles having slit-like developer discharge ports 85a and 85b, a developer discharge port in which a plurality of holes are formed in one row or in a plurality of columns in a row. In this case, the developer can be ejected in a strip shape substantially perpendicularly to the substrate G.

  Further, the paddle forming nozzles 80a and 80b are configured such that their height positions can be changed by elevating mechanisms 58a and 58b such as air cylinders and electric motors, respectively. The paddle forming nozzles, for example, the paddle forming nozzles 80a are positioned below by extending the lifting mechanism 58a, and the unused paddle forming nozzles 80b can be held close to the bottom surface of the nozzle holding arm 51. It has become.

  Further, FIG. 6 is an explanatory view showing a liquid supply path for the developer to the paddle forming nozzles 80a and 80b. The paddle forming nozzles 80a and 80b have different types and / or different concentrations of the developer A. -Liquid supply path | route A * B is formed so that B may be supplied.

  With such a configuration, when a predetermined developing solution (developing solution A) is applied onto the substrate G from the developing solution discharge port 85a of the paddle forming nozzle 80a while the nozzle holding arm 51 is scanned over the substrate G. Since the developer discharge port 85b of the unused paddle forming nozzle 80b does not touch the developer A applied to the substrate G, the developer B is mixed into the developer paddle on the substrate G, or the paddle forming nozzle 80b is not used. There is no problem that the nozzle 80b is contaminated by the developer A.

  Further, since different developing solutions can be applied to the substrate G from the paddle forming nozzles 80a and 80b, for example, different types of resists are used for the substrates G of two lots. It is possible to easily cope with the case where development processing must be performed using different types of developing solutions and the lots must be processed continuously. That is, as compared with the case where only one paddle forming nozzle (developer discharge nozzle) is provided, it is not necessary to clean the paddle forming nozzle, and only the position adjustment of the paddle forming nozzles 80a and 80b is performed. Since the development processing can be performed continuously, the processing efficiency is increased and the productivity is improved.

  As shown in FIG. 6, degassing modules 59a and 59b are provided in the liquid feeding paths A and B, respectively. In the developer A / B to be fed, for example, high-pressure nitrogen gas used for feeding the developer A / B to the paddle forming nozzles 80a / 80b is dissolved, and the developer is used as a substrate. When it is applied to G, dissolved gas is bubbled and adheres to the substrate G, and a portion that does not get wet with the developer is generated on the substrate G, which may cause development failure. Therefore, such a dissolved gas is removed by the degassing modules 59a and 59b. The deaeration modules 59a and 59b can have a structure in which, for example, a developer passes through a hollow fiber membrane or a porous resin in a reduced pressure atmosphere.

  In addition, three-way valves 57a and 57b are disposed in the liquid feeding paths A and B. When the developing solutions A and B are supplied to the paddle forming nozzles 80a and 80b, the valve for performing vacuum suction is closed, and after the supply of the developing solutions A and B is completed, the developing solution The valve on the supply side of A and B is closed and the valve on the vacuum suction side is opened to operate to discharge the developer remaining in the paddle forming nozzles 80a and 80b. In this way, it is possible to prevent the developer from dripping from the paddle forming nozzles 80a and 80b, and in particular, to prevent the dripping from one of the paddle forming nozzles that is not being used. It is possible to prevent another developer from being mixed in. Note that the time for performing vacuum suction can be arbitrarily set, whereby the amount of the developer in the paddle forming nozzles 80a and 80b can be controlled.

  Next, regarding the development processing steps using the development processing units (DEV) 24a to 24c having the two paddle forming nozzles 80a and 80b described above, a plurality of substrates G in a lot (referred to as lot A) are After processing with the developer A using the paddle forming nozzle 80a according to FIG. 6, a plurality of substrates G of different lots (referred to as lot B) are different from the developer A using the paddle forming nozzle 80b. An example of processing with another developer B will be described. FIG. 7 is an explanatory diagram (flow chart) showing this development processing step.

  First, the inner cup 46 and the outer cup 47 are held at the lower level (right side position in FIG. 3) (step 1). In this state, the transfer arm 19a holding the substrate G is inserted into the development processing units (DEV) 24a to 24c, and the spin chuck 41 is raised in accordance with this timing, and the substrate G is transferred to the spin chuck 41 ( Step 2).

  The transfer arm 19a is retracted outside the development processing units (DEV) 24a to 24c, and the spin chuck 41 on which the substrate G is placed is lowered and held at a predetermined position (step 3). Then, the nozzle holding arm 51 is moved and arranged to a predetermined position in the inner cup 46 (step 4), and the lifting mechanism 58a is extended to hold only the paddle forming nozzle 80a downward (step 5). While the substrate G is scanned, a predetermined developer A is applied onto the substrate G using the paddle forming nozzle 80a to form a developer paddle (step 6). In the three-way valve 57a shown in FIG. 6, the valve for performing vacuum suction for supplying the developer A is in a closed state.

  After the developer paddle is formed, until the predetermined development processing time (development reaction time) elapses, the paddle forming nozzle 80a is retracted to the upper position by holding the lifting mechanism 58a (step). 7) The nozzle holding arm 51 is retracted from the inner cup 46 and the outer cup 47 (step 8), and the nozzle holding arm 54 is driven instead to hold the rinse liquid discharge nozzle 60 at a predetermined position on the substrate G (step 8). Step 9). Subsequently, the inner cup 46 and the outer cup 47 are raised and held at the upper position (the left position in FIG. 3) (step 10). The upper position is a height at which the horizontal position of the surface of the substrate G substantially matches the position of the tapered portion of the inner cup 46.

  The rinse liquid is discharged from the rinse liquid discharge nozzle 60 almost simultaneously with the operation of rotating the substrate G at a low speed to shake off the developer on the substrate G, and the exhaust operation by the exhaust port 49 is performed almost simultaneously with these operations. Start (step 11). That is, it is preferable that the exhaust port 49 be in an inactive state before the development reaction time elapses, so that the developer paddle formed on the substrate G has an air flow generated by the operation of the exhaust port 49 or the like. No adverse effects occur.

  The rotation of the substrate G is started, and the developing solution and the rinsing solution scattered from the substrate G toward the outer periphery thereof are guided downward by hitting the tapered portion and the outer peripheral wall (the vertical wall on the side surface) of the inner cup 46, and from the drain tube 50a. Discharged. At this time, until a predetermined time elapses from the start of rotation of the substrate G, a processing solution having a high developer concentration mainly composed of a developer is discharged from the drain tube 50a. It is preferable that the switching valve provided in is recovered by operating and used for reuse.

  After a predetermined time has elapsed from the start of the rotation of the substrate G, the inner cup 46 and the outer cup 47 are lowered and held at the lower position while discharging the rinse liquid and while the substrate G is rotated (step 12). . In the lower position, the horizontal position of the surface of the substrate G is set to a height that substantially matches the position of the tapered portion of the outer cup 47. Then, the number of rotations of the substrate G is made larger than that at the start of the rotation operation for shaking off the developer so that the developer residue is reduced. The operation of increasing the number of rotations of the substrate G may be performed simultaneously with the lowering operation of the inner cup 46 and the outer cup 47 or at any stage before and after. In this way, the processing liquid mainly composed of the rinsing liquid scattered from the substrate G hits the tapered portion and the outer peripheral wall of the outer cup 47 and is discharged from the drain pipe 50b.

  Next, the discharge of the rinsing liquid is stopped and the rinsing liquid discharge nozzle 60 is stored in a predetermined position (step 13), and the number of rotations of the substrate G is further increased and held for a predetermined time. That is, spin drying is performed to dry the substrate G by high-speed rotation (step 14). The spin drying is preferably performed while supplying a dry nitrogen gas or the like to the substrate from above the substrate G using a gas blowing mechanism.

  FIG. 8 is an explanatory view showing an embodiment of gas supply to the substrate G. As shown in FIG. As shown in FIG. 8A, the nozzle 98 for discharging nitrogen gas is held substantially horizontally on the inner cup 46 and the outer cup 47 when not used except for spin drying. When performing, as shown in FIG. 8 (b), the joint portion 99 a of the pipe 99 is broken and the tip of the nozzle 98 is directed toward the substrate G, and nitrogen gas is supplied toward the substrate G. This shortens the drying time. When the spin drying is completed, the supply of nitrogen gas is stopped, the joint portion 99a is returned to the original position again, and the entire nozzle 98 and the pipe 99 are held substantially horizontally to enter a standby state.

  After the spin drying is thus completed, the rotation of the substrate G is stopped, the spin chuck 41 is raised (step 15), and the transfer arm 19a is inserted into the development processing units (DEV) 24a to 24c in accordance with the timing. Then, the substrate G is transferred, and thereafter the static electricity generated in the spin chuck 41 is removed (static elimination) using an ionizer (step 16). This charge removal can be performed by supplying ionized gas to the substrate G using an ionizer in the same manner as the method of previously blowing nitrogen gas onto the substrate G using a gas blow mechanism during spin drying.

  In the state where the substrate G is not on the spin chuck 41 after the series of steps from Step 1 to Step 16 is completed, the state of Step 1 is satisfied because the inner cup 46 and the outer cup 47 are in the lower position. Will be. Further, if the substrate G to be processed next is transported into the development processing units (DEV) 24a to 24c by the transport arm 19a, the development processing of the substrate G can be continuously performed according to the above-described steps after Step 2. it can.

  In this way, after the development processing for all the substrates G in lot A is completed, in the three-way valve 57a (see FIG. 6) provided in the liquid feeding path A, the developer A supply side valve is closed and vacuum suction is performed. The valve on the side is opened and the operation is performed to discharge the developer A remaining in the paddle forming nozzle 80a (step 17). Thus, dripping of the developer A from the paddle forming nozzle 80a is prevented. Thereafter, in the same manner as in Step 1 to Step 16 described above, the development process using the developer B using the paddle forming nozzle 80b is performed on the substrate G of the lot B (Step 18). In this way, development processing using different developers A and B can be performed continuously.

  After the development processing is completed for all the substrates G in the lot B, in the three-way valve 57b (see FIG. 6) provided in the liquid supply path B, the supply side valve of the development solution B is closed and the vacuum suction side valve is closed. Is opened, the developer B remaining in the paddle forming nozzle 80b is discharged (step 19), and all the processes are completed.

  Next, another embodiment in which the developing solution supply mechanism is different in the developing units (DEV) 24a to 24c will be described. Although FIG. 5 shows a form in which two paddle forming nozzles 80a and 80b having the same structure are arranged on the nozzle holding arm 51, another developer discharge nozzle having a different developer discharge form is provided. It is also possible. For example, FIG. 9 shows a configuration in which the nozzle holding arm 51 is provided with a paddle forming nozzle 80a and a spray nozzle 80c for spraying and supplying the developer toward the substrate G with a predetermined strength. The position of the paddle forming nozzle 80a and the spray nozzle 80c can be adjusted separately vertically by elevating mechanisms 58a and 58c.

  When the paddle forming nozzle 80a and the spray nozzle 80c are arranged on the nozzle holding arm 51, unlike the case of FIG. 6, the paddle forming nozzle 80a and the spray nozzle 80c are arranged as shown in FIG. The developer liquid supply paths A and C are configured so that the same developer is supplied, and the developer paddle is first formed using the paddle forming nozzle 80a, and then formed using the spray nozzle 80c. Further, a developer is applied from above the developer paddle.

  From the substantially elliptical developer discharge port 85c formed in the spray nozzle 80c, the developer is discharged in a substantially fan-shaped plane, and the discharge momentum of the developer thus discharged is used for paddle formation. It is larger than when the nozzle 80a is used. By applying the developer to the substrate G while applying pressure (impact) in this way, the developer paddle previously formed is agitated, and the development reaction proceeds more uniformly. Thus, the development characteristics are improved, a clearer and more uniform pattern is obtained, and the development time is shortened.

  The shape of the developer discharge port 85c is not limited to a substantially elliptical shape as shown in FIG. 9, and may be a circle or an oval. Further, the form of the developer discharged from the developer discharge port 85c is not limited to a substantially fan-shaped plane, and may be a conical shape. Further, the developer discharge ports 85c do not have to be arranged so as to be in a straight line as shown in FIG. 9, but may be arranged in a staggered manner, for example.

  In addition, degassing modules 59a and 59c and three-way valves 57a and 57c are arranged in the liquid feeding paths A and C, and the developer in the paddle forming nozzle 80a and the developer in the spray nozzle 80c are individually provided. Can be discharged. However, since the same developer is supplied from the paddle forming nozzle 80a and the spray nozzle 80c, for example, even when liquid dripping occurs from the other unused nozzle during use of one nozzle, the development characteristics are improved. The effect is negligible.

  The developing process in the case where the same developer is applied to the substrate G using the paddle forming nozzle 80a and the spray nozzle 80c described above is as shown in the flowchart of FIG. In the development processing step shown in FIG. 11, two paddle forming nozzles 80a and 80b are arranged on the nozzle holding arm 51 as described above with reference to the flowchart of FIG. A development processing step of continuously processing the substrate G using different developers A and B is not employed. However, the process from Step 1 to Step 6 and Step 8 to Step 16 shown in FIG. 11 is the same as Step 1 to Step 6 and Step 8 to Step 16 of the development processing process shown in FIG.

  Therefore, the process from step 6 to step 8 will be described in detail. After the developer paddle is formed on the substrate G using the paddle forming nozzle 80a in step 6, the paddle forming nozzle 80a is driven by the lifting mechanism 58a. Then, it is held upward (step 7-1), and instead, the spray nozzle 80c is driven at the lower position by driving the elevating mechanism 58c (step 7-2). Then, the developer is further applied from above the developer paddle formed by the paddle forming nozzle 80a using the spray nozzle 80c (step 7-3), and the developing process is advanced.

  In the step 7-3, the developer may be discharged from the spray nozzle 80c while rotating the substrate G at a predetermined low rotation speed. After step 7-3, the substrate G is rotated. You may move to step 9 as it is. By rotating the substrate G and discharging a part of the developer from the substrate G, while applying a new developer, it is possible to accelerate the development reaction and shorten the processing time.

  When the application of the developer by the spray nozzle 80c is completed, the spray nozzle 80c is driven upward by driving the lifting mechanism 58c (step 7-4), and the nozzle holding arm 51 is retracted (step 8). Further, the processing after step 9 is performed. Here, when the transfer of the substrate G from the spin chuck 41 to the transfer arm 19a is completed for all the substrates G in step 16, the developer in the three-way valves 57a and 57c. By closing the supply side valve and opening the vacuum suction side valve, the developer in the paddle forming nozzle 80a and the spray nozzle 80c is discharged (step 17a). Thus, the development process is completed.

  Next, another embodiment of the developer supply mechanism will be described with reference to the plan view of FIG. The development processing units (DEV) 24 a to 24 c shown in FIG. 12 have a nozzle holding arm 51 for supplying a developing solution, and the nozzle holding arm 51 is driven along a guide rail 53 by a drive mechanism 52. It has become so.

  The nozzle holding arm 51 is provided with three nozzles: a paddle forming nozzle 80a, a spray nozzle 80c, and a pre-rinse nozzle 60a. Therefore, a mechanism for adjusting the height positions of the ejection openings of the paddle forming nozzle 80a, the spray nozzle 80c, and the pre-rinse nozzle 60a is provided between the nozzle holding arm 51 and each nozzle.

  The pre-rinse nozzle 60a is configured using, for example, a straight tubular nozzle like the rinse liquid discharge nozzle 60, and immediately after a predetermined developer is applied to the substrate G using the spray nozzle 80c on the substrate G. Subsequently, a predetermined rinsing solution is supplied to the substrate G to stop the development reaction. Thus, after the uniform developing reaction is advanced using the spray nozzle 80c, the developing solution is immediately discharged from the pre-rinsing nozzle 60a to stop the developing reaction, so that the time during which the developing solution stays on the substrate G is stopped. It becomes shorter, the uniformity of the development reaction can be further improved, and a pattern having excellent shape accuracy can be obtained.

  In the development processing units (DEV) 24a to 24c shown in FIG. 12, in addition to the pre-rinsing nozzle 60a, a rinsing liquid discharge nozzle 60 is also provided. After the development reaction by the pre-rinsing nozzle 60a is stopped, the rinsing liquid is discharged. A rinsing process using the nozzle 60 is performed. Of course, it is possible to make the pre-rinsing nozzle 60a play the role of the rinsing liquid discharge nozzle 60.

  However, in this case, the paddle forming nozzle 80a and the spray nozzle 80c for discharging the developer are also present on the substrate G during the rinsing process. For example, the nozzles are used to complete the rinsing process and shift to the spin drying process. When the holding arm 51 is moved so as to be retracted from the substrate G, there is a possibility that the developer drippings from the paddle forming nozzle 80a or the spray nozzle 80c onto the substrate G. Since there is a concern that development defects may occur on the substrate G due to such dripping of the developing solution, a nozzle that discharges only the rinsing solution is provided on the substrate G in the final stage of the rinsing process, and the rinsing solution is supplied. It is preferable to take a form.

  FIG. 13 shows a flowchart of the developing process using the paddle forming nozzle 80a, the spray nozzle 80c, and the pre-rinse nozzle 60a disposed on the nozzle holding arm 51. Steps 1 to 3 and steps 9 to 16 shown in FIG. 13 are the same as the development processing steps shown in FIGS. 7 and 11. Therefore, the process from step 4 to step 8 will be described in detail. According to step 3, the spin chuck 41 is lowered to hold the substrate G in a predetermined position, and then the nozzle holding arm 51 is driven to drive the paddle forming nozzle 80a. The developer paddle is formed by (Step 4a). At this time, the height position is adjusted so that the developer discharge port 85a of the paddle forming nozzle 80a is positioned below the developer discharge port 85c of the spray nozzle 80c and the rinse solution discharge port of the pre-rinse nozzle 60a. deep.

  Next, the height of the paddle forming nozzle 80a is adjusted so as to approach the nozzle holding arm 51 to adjust the height position, and instead, the developer discharge port 85c of the spray nozzle 80c is positioned at the lowest position, Further, a developer is applied from above the developer paddle formed on G (step 5a). After the application of the developer by the spray nozzle 80c is finished, the spray nozzle 80c is raised so as to approach the nozzle holding arm 51, and the height position is adjusted. Instead, the rinse liquid discharge port of the pre-rinse nozzle 60a is used as the spray nozzle. The position of the pre-rinse nozzle 60a is adjusted so as to be lower than the developing solution discharge port 85c of 80c (step 6a). Thereafter, almost simultaneously with the start of the discharge of the rinsing liquid from the pre-rinse nozzle 60a, the rotation of the substrate G is started, and the exhaust operation from the exhaust port 49 is started (step 7a). After the discharge of the rinse liquid from the pre-rinse nozzle 60a is completed, the nozzle holding arm 51 is retracted while the substrate G is rotated, and the rinse liquid discharge nozzle 60 is driven instead (step 9), and the subsequent rinse process is performed. enter.

  The development reaction can be stopped in a state in which the uniformity of the development reaction is ensured by shortening the time from the end of the application of the developer by the spray nozzle 80c to the start of the discharge of the rinse liquid by the pre-rinse nozzle 60a as much as possible. Thus, it is possible to obtain a uniform pattern with excellent shape accuracy.

  In the above description, the rotation of the substrate G is started in step 7a. However, the application of the developer by the spray nozzle 80c (step 5a) is performed while rotating the substrate G at a predetermined low rotation speed, and the substrate G is rotated. It is also preferable to start the discharge of the rinse liquid by the pre-rinse nozzle 60a in the state. In this case, it is possible to reduce the occurrence of spiral development marks generated by performing development while rotating the substrate G.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said form, A various deformation | transformation is possible. For example, as shown in FIG. 5, when two paddle forming nozzles 80 a and 80 b are arranged on one nozzle holding arm 51, a pre-rinsing nozzle 60 a is further arranged on the nozzle holding arm 51. Each nozzle is provided with an elevating mechanism so that the position of the treatment liquid discharge port can be adjusted. In this case, it takes a long time to form the developer paddle, and instead of leaving the developer paddle and taking a development reaction time, immediately after forming the developer paddle, the rinse liquid is discharged from the pre-rinse nozzle 60a. Thus, a development process such as stopping the development reaction can be performed, whereby a clear development pattern can be obtained.

  Also, two nozzle holding arms 51 are provided, and one paddle forming nozzle 80a, spray nozzle 80c, and pre-rinse nozzle 60a are provided on each arm, and each arm has a different type and / or concentration. If the configuration is such that the developer can be discharged, it is possible to easily cope with the development processing for the substrates G of different lots of the developer to be used.

  The number of nozzles that can be arranged in the nozzle holding arm 51 is arbitrary. For example, three or more paddle forming nozzles 80a (80b) or spray nozzles 80c are arranged in one nozzle holding arm 51, Further, a pre-rinse nozzle 60a may be provided. Two or more nozzle holding arms 51 may be provided in each development processing unit (DEV) 24a to 24c.

  The means for holding the substrate G is not limited to the spin chuck 41 that holds the substrate G by adsorption force as in the above-described embodiment. For example, a plurality of protrusions formed on a spin plate larger than the substrate G are formed. In order to prevent the position of the substrate G from shifting when the substrate G is placed on the fixed pins and rotated, the substrate G is separated from another pin or the like at predetermined positions on the end face of the substrate G, for example, at the four corners. It is also possible to use a mechanical method of holding at.

  Further, in the development processing step, the inner cup 46 and the outer cup 47 were moved up and down to adjust the position at the time of developer swinging off, rinsing, and spin drying, but the inner cup 46 and outer cup 47 were fixed, It is also possible to perform processing such as shaking off the developer while raising and lowering the spin chuck 41 and holding it in a predetermined position. Further, in the above embodiment, the LCD substrate has been described as a substrate to be processed, but other substrates such as a semiconductor wafer and a CD substrate can also be used.

The top view which shows one Embodiment of the resist application | coating / development system carrying the development processing apparatus (development processing unit) used for implementation of this invention. The top view which shows the example of the image development processing apparatus used for implementation of this invention. FIG. 3 is a cross-sectional view showing an example of a development processing apparatus used for carrying out the present invention. FIG. 3 is an explanatory diagram showing an example of a control system of a development processing apparatus used for carrying out the present invention. The perspective view which shows one Embodiment of the developing solution discharge nozzle of the development processing apparatus used for implementation of this invention. FIG. 6 is an explanatory diagram showing an embodiment of a developer supply path to a developer discharge nozzle when the developer discharge nozzle shown in FIG. 5 is used. Explanatory drawing which shows the image development process at the time of using the developing solution discharge nozzle of FIG. Explanatory drawing which shows one Embodiment of the gas supply to a board | substrate at the time of spin drying The perspective view which shows another embodiment of the developing solution discharge nozzle of the development processing apparatus used for implementation of this invention. Explanatory drawing which shows one Embodiment of the supply path | route of the developing solution to a developing solution discharge nozzle at the time of using the developing solution discharge nozzle of FIG. Explanatory drawing which shows the image development process at the time of using the developing solution discharge nozzle of FIG. The top view which shows another example of the image development processing apparatus used for implementation of this invention. Explanatory drawing which shows the image development process at the time of using the developing solution discharge nozzle arrange | positioned at the image development processing apparatus of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1; Cassette station 2; Processing part 3; Interface part 24a-24c; Development processing unit (DEV)
41; Spin chuck 46; Inner cup 47: Outer cup 48; Sink 51 / 51a / 51b; Nozzle holding arm 57a / 57b; Three-way valve 58a-58c; Elevating mechanism 59a-59c; Deaeration module 60; Pre-rinse nozzles 80a and 80b; paddle forming nozzles 80c; spray nozzle 100; resist coating / development processing system G; substrate (substrate to be processed)

Claims (6)

A method for developing a substrate subjected to exposure processing,
A developer supply mechanism having one nozzle holding arm for holding a plurality of developer discharge nozzles for discharging a predetermined developer to the substrate, and an elevating mechanism capable of individually adjusting the height of the plurality of developer discharge nozzles Use
By the elevating mechanism, among the plurality of developer discharge nozzles, a first developer discharge nozzle to be used is positioned at a lower position, and other developer discharge nozzles not to be used are positioned at an upper position close to the nozzle holding arm. In this state, the predetermined developer is supplied in a belt shape while scanning relatively with respect to the substrate mounted substantially horizontally only from the first developer discharge nozzle, and the developer paddle is supplied onto the substrate. Forming a step;
With the lifting mechanism, the used first developer discharge nozzle is positioned at an upper position close to the nozzle holding arm, and the second developer discharge nozzle to be used is moved downward among the other developer discharge nozzles. A step of spraying and supplying the predetermined developer on the developer paddle formed on the substrate only from the second developer discharge nozzle,
A step of continuously supplying a rinsing liquid to the substrate after completion of the supply of the developer;
A development processing method characterized by comprising: A method for developing a substrate subjected to exposure processing,
A plurality of developer discharge nozzles for discharging a predetermined developer onto the substrate, a nozzle holding arm for holding a pre-rinse nozzle for discharging a rinse liquid, and the heights of the plurality of developer discharge nozzles and the pre-rinse nozzle Using a developer supply mechanism with a lifting mechanism that can be adjusted individually,
By the elevating mechanism, among the plurality of developer discharge nozzles, a first developer discharge nozzle to be used is positioned at a lower position, and other unused developer discharge nozzles and pre-rinse nozzles are close to the nozzle holding arm. In this state, the predetermined developer is supplied in a band shape while scanning relatively with respect to the substrate placed substantially horizontally only from the first developer discharge nozzle. Forming a developer paddle in
Among the other developer discharge nozzles, the second developer discharge nozzle to be used is positioned at a lower position by the lifting mechanism, and the first developer discharge nozzle and the pre-rinse nozzle are placed on the nozzle holding arm. A step of further supplying the predetermined developer by spraying onto the developer paddle formed on the substrate only from the second developer discharge nozzle in that state, at a close upper position;
Supplying a rinsing liquid from the pre-rinsing nozzle to the substrate continuously after completion of the supply of the developer;
A development processing method characterized by comprising:   In the step of supplying the rinsing liquid, the pre-rinsing nozzle is positioned at a lower position by the elevating mechanism, and the plurality of developer discharge nozzles are positioned at an upper position close to the nozzle holding arm. The development processing method according to claim 2, wherein supply is performed. Claim 2, characterized in that after said rinsing liquid supplying a further comprises the step of supplying a rinse liquid again different rinsing liquid discharge nozzle and the pre-rinse nozzles used in the step of supplying the rinse liquid Alternatively, the development processing method according to claim 3 . 5. The process after the step of supplying the developer by spraying or the process after the step of supplying the rinse liquid is performed while rotating the substrate at a predetermined number of revolutions. The development processing method according to any one of the above. Directing the gas nozzle held horizontally above the substrate to the substrate, rotating the substrate while supplying gas from the gas nozzle, and drying the rinse liquid supplied to the substrate;
After the substrate is dried, the step of stopping the gas supply by the gas nozzle and returning the gas nozzle to the horizontal state again;
The development processing method according to claim 1, further comprising:

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