CN1916771A - Liquid processing method and device thereof - Google Patents

Abstract

The present invention is a solution treatment unit, supplying the treatment solution onto the substrate, which comprises a carrier path for carrying the substrate in the horizontal direction keeping its posture nearly horizontal; and a solution treatment part wherein the pre-determined treatment solution is supplied onto the substrate at the carrier path, and the solution treatment part includes vapor jet nozzles for blowing dry vapor to the substrate; a drying process part for carrying the substrate processed by the prior solution treatment unit in the horizontal direction keeping its posture nearly horizontal wherein the vapor is blown to said substrate to the vapor jet nozzle. In the drying process part, a spray quantity control device is provided for forming a liquid film of said treatment solution on said substrate and controlling the speed of the dry vapor blowed from said vapor jet nozzles.

Description

Method for treating liquids and liquid handling device

The application divides an application, and the application number of female case is 03119834.1, and the applying date is on March 4th, 2003, and the denomination of invention of female case is method for treating liquids and liquid handling device.

Technical field

The present invention relates to a kind of method for treating liquids and liquid handling device of the continuous stream pipeline mode that substrate is continuously handled on streamline.

Background technology

Recently, in the resist coating developing system in LCD (liquid crystal indicator) makes, as can be advantageously and corresponding washing methods of the maximization of LCD substrate or developing method, transfer roller or travelling belt along continuous straight runs are being disposed on the transfer path that forms, and the limit is transmitted the tinuous production mode that is called as of carrying out development treatment or carrying out washing treatment in LCD substrate limit and is popularized.

For example, for development treatment, following method is known, transmit substrate with horizontal posture to horizontal direction on one side, (1) applies developer solution on the surface of substrate on one side, on substrate, form the developer solution slurry, keep official hour to carry out developing reaction, (2) substrate is transformed into the inclination posture, developer solution is flowed away, and (3) supply washing fluid on substrate, remove the washing (flushing) of developer solution residue and handle, (4) adopt air knife from the place ahead one side of the direction of transfer of substrate dry gas such as injection air on the one side direction substrate of rear, thereby the washing fluid on the substrate surface that blows off make the substrate drying.

As mentioned above, usually, in the developing apparatus or wash mill of tinuous production mode, adopt air knife as removing remaining in the terminal stage of treatment process or making the instrument of substrate drying attached to the liquid on the substrate surface.Air knife has from an end of substrate at the left and right sides of transfer path Width and covers the countless gas discharge outlets of the other end or the gas discharge outlet of slit-shaped, the position of regulation to directly over it or under the sharp gas stream (being generally airflow or nitrogen stream) of the substrate ejection cutter shape that passes through.By spraying the sharp gas stream of this cutter shape, by when near the air knife, the liquid on the substrate surface is swept to substrate rear end one side, and falls outside the substrate, is promptly blown off and mangle at substrate.

But, in this substrate processing device in the past, owing to be substrate surface to be dried up without a break by dry gas stream from the air knife ejection, so, become the reason that causes unfavorable condition in the operation of back becoming scar or residue at substrate easily attached to the mist that contains certain composition on the substrate surface or from the agglutinator of the small liquid of the composition of substrate surface stripping after the drying.For example, when producing residue in the opening of the resist mask that forms at developing procedure, will become undesirable small mask in the etching work procedure afterwards, will cause that etching is bad.And adopting air knife when substrate ejection dry gas, produce mist owing to the liquid on the substrate surface disperses, so this mist might have been implemented on the part of substrate of dried attached to the dry gas that is blown out by air knife.In this case, adhered on the part of mist and will produce watermark or scar, existed the problem that the substrate quality reduces.

Summary of the invention

The present invention proposes in order to solve above-mentioned the problems of the prior art, produce scar or residue on the substrate surface after its purpose is to prevent dried in the continuous stream pipeline mode, improve and handle quality, be suppressed at liquid handling vestiges such as producing watermark on the substrate.

In order to reach purpose of the present invention, method for treating liquids of the present invention be a kind of on substrate providing chemical liquid, the method for treating liquids of handling, comprise: on one side with the posture of approximate horizontal transmit substrate on one side on above-mentioned substrate supply predetermined process liquid, carry out the 1st operation of liquid handling, and handle the back, transmit above-mentioned substrate sprays steam on one side, liquid is scanned out from above-mentioned substrate on above-mentioned substrate the 2nd operation with the posture of approximate horizontal on one side at aforesaid liquid.

Liquid handling device of the present invention comprises: the transfer path that substrate is transmitted to horizontal direction with the posture of approximate horizontal, on the above-mentioned transfer path on above-mentioned substrate supply predetermined process liquid, carry out the liquid handling portion of liquid handling, and have the vapour injection nozzle of one or more jet vapors, on the transfer path of aforesaid liquid handling part downstream one side from above-mentioned vapour injection nozzle to above-mentioned substrate spray steam, with liquid from dried portion that above-mentioned substrate scans out.

In the present invention, owing on the substrate that is attached with liquid after the liquid handling, spray steam by the vapour injection nozzle, under the pressure effect of steam flow, liquid is scanned out from substrate, so the substrate surface after the dried (the 2nd operation) is formed with thin liquid film, becoming substrate surface is half-dried or undried state.Even on the substrate surface of this leather hard, be attached with mist, owing to disperseing in moisture film or spreading dissolves, so can not produce scar.And, even contain the liquid of impurity composition, owing to also in moisture film, disperse, so can aggegation and produce residue from the substrate surface stripping.

The other viewpoint according to the present invention, method for treating liquids of the present invention comprises: the posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carry out the 1st operation of liquid handling, on one side transmit aforesaid liquid and handle the 2nd operation that the substrate that is through with adopts mode jet drying gas on above-mentioned substrate of the residual liquid film that above-mentioned treating fluid arranged on the surface of gas injection nozzle with above-mentioned substrate on one side, and carry out the 3rd operation that heat treated makes the lip-deep treating fluid evaporation that remains in above-mentioned substrate by the substrate that above-mentioned the 2nd operation is through with the posture of approximate horizontal.

The other viewpoint according to the present invention, liquid handling device of the present invention comprises: the posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carry out the liquid handling portion of liquid handling, gas injection nozzle with jet drying gas on substrate, on one side transmit the dried portion that substrate that the processing in the aforesaid liquid handling part is through with adopts above-mentioned gas injection nozzle jet drying gas on above-mentioned substrate on one side with the posture of approximate horizontal, and in above-mentioned dried portion, in order on above-mentioned substrate, to form the liquid film of above-mentioned treating fluid, control is from the emitted dose control device of the flow velocity of the dry gas of above-mentioned gas injection nozzle injection.

The method for treating liquids of above-mentioned viewpoint and liquid handling device according to the present invention, owing on the surface of the substrate that has sprayed dry gas by the gas injection nozzle, be formed with the liquid film for the treatment of fluid, even so because of the mist of the treating fluid that produces to jet drying gas on the substrate attached to substrate on, this mist also will be taken into by liquid film.Therefore, prevented from substrate, to produce watermark etc.And the liquid film by the treating fluid that forms on the surface of substrate has reduced the static accumulation, and therefore, substrate is not easy breakage.In addition, according to this method for treating liquids, because the treating fluid on will substrate surface blows off fully, so can reduce the dry gas scale of construction that blows out from the gas injection nozzle.

The method for treating liquids of other viewpoints comprises according to the present invention: the posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carry out the 1st operation of liquid handling, handle the substrate that is through with the posture transmission aforesaid liquid of almost parallel on one side and adopt gas injection nozzle jet drying gas on above-mentioned substrate on one side, the 2nd operation that to blow off attached to the lip-deep treating fluid of above-mentioned substrate, supply water vapor on the surface by the substrate that is through with to above-mentioned the 2nd operation, on the surface of above-mentioned substrate, form the 3rd operation of moisture film, and carry out the 4th operation that heat treated makes the lip-deep water evaporates of above-mentioned substrate by the substrate that above-mentioned the 3rd operation is through with.

The liquid handling device of other viewpoints comprises according to the present invention: the posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carry out the liquid handling portion of liquid handling, gas injection nozzle with jet drying gas on substrate, on one side adopt above-mentioned gas injection nozzle to above-mentioned substrate on jet drying gas by the substrate that is through with the processing in the posture transmission aforesaid liquid handling part of approximate horizontal on one side, the dried portion that to blow off attached to above-mentioned on-chip treating fluid, and on above-mentioned substrate, supply water vapor on one side by transmitting the substrate that has passed through above-mentioned dried portion with the posture of approximate horizontal on one side, the moisture film that forms moisture film on the surface of above-mentioned substrate forms handling part.

Method for treating liquids and liquid handling device according to these viewpoints, even on the substrate of mist that when adopting gas injection nozzle ejection dry gas, produces attached to drying, since after be formed uniformly moisture film, so can suppress the generation watermark that causes because of mist etc.

The other viewpoint according to the present invention, liquid handling device of the present invention comprises: the posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carry out the liquid handling portion of liquid handling, gas injection nozzle with jet drying gas on substrate, the substrate that is through with the processing in the posture transmission aforesaid liquid handling part of approximate horizontal adopts above-mentioned gas injection nozzle jet drying gas on above-mentioned substrate on one side on one side, the dried portion that to blow off attached to the lip-deep treating fluid of above-mentioned substrate, and in above-mentioned dried portion, in order not unroll to the place ahead of substrate transfer direction one side by the mist that adopts the above-mentioned gas injection nozzle treating fluid that jet drying gas produces on above-mentioned substrate, the space bar that on the position that is provided with the above-mentioned gas injection nozzle, the one side space, rear and the one side space, the place ahead of substrate transfer direction is separated.

Liquid handling device of the present invention according to this viewpoint, even atomizing when being blown off by dry gas from the supply of gas injection nozzle attached to the treating fluid on the substrate surface, because its mist can not adhere to on-chip so prevented mist to the place ahead of substrate transfer direction one side shifting.

Description of drawings

Fig. 1 is applicable to the vertical view of the coating developing system structure of substrate processing device of the present invention for expression.

Fig. 2 is the side view of thermal treatment portion structure in the coating developing system of presentation graphs 1.

Fig. 3 is the process flow diagram of processing sequence in the coating developing system of presentation graphs 1.

Fig. 4 is the integrally-built side view of development treatment unit in the expression embodiment.

Fig. 5 is the stereographic map of the configuration example of nozzle scan mechanism in the expression embodiment.

Fig. 6 is the stereographic map of the outward appearance of steam cutter in the expression embodiment.

Fig. 7 is the block diagram of steam supply mechanism structure in the expression embodiment.

Fig. 8 is the side view of the configuration structure of steam cutter in the expression embodiment.

Fig. 9 is the vertical view of the configuration structure of steam cutter in the expression embodiment.

Figure 10 is the side view of the effect of nozzle scan in the expression embodiment, and the direction of scanning of Figure 10 (A) expression nozzle and the direction of transfer of substrate are reverse appearance, and the direction of scanning of Figure 10 (B) expression nozzle and the direction of transfer of substrate are appearance in the same way.

Figure 11 is the side view of the effect of steam cutter mechanism in the expression embodiment, the appearance of the top and bottom ejection water vapor of the relative substrate of Figure 11 (A) expression, the appearance that the appearance that the liquid film of Figure 11 (B) expression flushing falls from the rear end from substrate, Figure 11 (C) expression washing fluid almost all fall from the substrate.

Figure 12 is the vertical view of the effect of steam cutter mechanism in the expression embodiment.

Figure 13 is the side view of a modified example of drying section in the expression embodiment.

Figure 14 is the side view of a modified example of drying section in the expression embodiment.

Figure 15 is the diagrammatic top view with coating developing system of other embodiments.

Figure 16 is the side view of the 1st thermal treatment portion of the coating developing system shown in expression Figure 15.

Figure 17 is the side view of the 2nd thermal treatment portion of the coating developing system shown in expression Figure 15.

Figure 18 is the side view of the 3rd thermal treatment portion of the coating developing system shown in expression Figure 15.

Figure 19 is the side view of the general configuration of the development treatment unit of other embodiments of expression.

Figure 20 is the vertical view of the general configuration of the development treatment unit shown in expression Figure 19.

Figure 21 is the diagrammatic side view of other embodiments of the dry section of expression formation development treatment unit.

Figure 22 is the diagrammatic top view of the dry section shown in Figure 21.

Figure 23 is the key diagram of the supply form of the water vapor supply nozzle that is provided with of expression water vapor on the dry section shown in Figure 21 and Figure 22.

Figure 24 is the key diagram of the treatment process in the dry section shown in expression Figure 21 and Figure 22.

Figure 25 is the diagrammatic side view of another embodiment of the dry section of expression formation development treatment unit.

Embodiment

Below, preferred implementation of the present invention is illustrated.Illustrated among Fig. 1 as the coating developing system that can be suitable for a configuration example of processing method for substrate of the present invention and substrate processing device.This coating developing system 10 is configured in the clean room, for example with the LCD substrate as processed substrate, in the manufacturing process of LCD, carry out various processing such as washing, resist coating, prebake conditions, development in the photetching operation and back baking.Exposure-processed is by carrying out in abutting connection with the exposure device 12 of the outside that is provided with this system.

Coating developing system 10 disposes the treating stations (P/S) 16 of growing crosswise at central part, disposes box body station (C/S) 14 and interface station (I/F) 18 on the two ends of its length direction (directions X).

Box body station (C/S) 14 sent out inlet for the box body of system 10, for substrate G multilayer is stacked, have and flatly for example to arrange 4 box body mounting tables 20 that can hold the box body C of multi-disc substrate on the Y direction, and carry out the substrate G connecting gear 22 of these mounting table 20 discrepancy relatively.Connecting gear 22 has mechanism, for example transferring arm 22a that can keep substrate G, can carry out the handing-over of substrate G with treating stations (P/S) 16 1 sides of adjacency with X, Y, four axle actions of Z, θ.

Treating stations (P/S) 16 has each handling part in the last arranged in order according to technology or operation of parallel and reverse a pair of assembly line A, B of extending along system length direction (directions X).

If explanation in further detail, from box body station (C/S) 14 1 sides on the process production line A of the upstream portion of interface station (I/F) 18 1 sides, dispose the 14, the 1st thermal treatment portion 26 of washing process portion, coated technique portion 28 and the 2nd thermal treatment portion 30 with becoming horizontal row.On the other hand, from interface station (I/F) 18 1 sides on the process production line B of the downstream portion of box body station (C/S) 14 1 sides, dispose the 2nd thermal treatment portion 30, developing process portion 31, decoloration process portion 34 and the 3rd thermal treatment portion 36 with becoming horizontal row.Under the form of this streamline, the 2nd thermal treatment portion 30 is positioned at the end of the process production line A of upstream side, is positioned at the front end of the process production line B in downstream simultaneously, between two assembly line As, B.

Being provided with the auxiliary space 38 of transmitting between two process production line A, B, can will be that unit puts the transmission container 40 of substrate G to two-way mobile with a slice in streamline direction (directions X) by not shown driving mechanism.

On the process production line A of upstream portion, washing process portion 24 comprises chip washing unit (SCR) 42, disposes laser UV illumination unit (e-UV) 41 in this chip washing unit (SCR) 42 with on the position of box body station (C/S) 10 adjacency.Washing portion in the chip washing unit (SCR) 42 transmits LCD substrate G to go up at the upper surface (processed face) of substrate G to the direction of assembly line A with horizontal posture and implements the wiping washing or jet and wash while pass through transfer roller or travelling belt.

At central part the connecting gear 46 of longitudinal type is set along process production line A with the 1st thermal treatment portion 26 of the downstream adjacency of washing process portion 24, multistage ground stacked arrangement has a plurality of unit on both sides before and after it.For example, as shown in Figure 2, in the multi-level unit portion (TB) 44 of upstream side, what be stacked with sequentially from bottom to up that substrate handover uses passes through unit (PASS) 50, the heating unit (DHP) 52,54 of dehydration baking usefulness, and coherent unit (AD) 56.At this, be used for carrying out the handing-over of substrate G with chip washing unit (SCR) 42 1 sides by unit (PASS) 50.And in the multi-level unit portion (TB) in downstream, what be stacked with sequentially from bottom to up that substrate handover uses passes through unit (PASS) 60, cooling unit (CL) 62,64, and coherent unit (AD) 66.Be used for carrying out the handing-over of substrate G by unit (PASS) 60 with coated technique portion 28 1 sides.

As shown in Figure 2, connecting gear 46 has can be along the lifting transfer body 70 of guide rail 68 lifting moving of extending to vertical direction, can be on this lifting transfer body 70 to rotation of θ direction or the rotation transfer body 72 that rotates, and be bearing in substrate G on this rotations transfer body 72 and direction advance and retreat and the transferring arm or the pin assemblies 74 that stretch forwards, backwards.The drive division 76 that is used for lifting driving lifting transfer body 70 is arranged on butt one side of vertical guide rail 68, the drive division 78 that is used for rotating drive rotation transfer body 72 is installed in lifting transfer body 70, and the drive division 80 that drives transferring arm 74 that is used to advance and retreat is installed in rotation transfer body 72.Each drive division 76,78,80 for example is made of electro-motor.

The connecting gear 46 of said structure can high-speed rotation and is visited two any unit in the adjacent multi-level unit portion (TB) 44,48 up and down, also can carry out the handing-over of substrate G with the auxiliary transmission container 40 that transmits space 38 1 sides.

With the coated technique portion 28 of the downstream adjacency of the 1st thermal treatment portion 26 as shown in Figure 1, become a row ground to dispose resist coating element (CT) 82, drying under reduced pressure unit (VD) 84, and removal unit, edge (ER) 86 along process production line A.Though omit among the figure, but in coated technique portion 28, these three unit (CT) 82, (VD) 84, (ER) 86 are provided with the conveyer of moving into, take out of substrate G according to process sequence one by one, in each unit (CT) 82, (VD) 84, (ER) 86, be that unit carries out various processing with a slice substrate G.

Has same structure with the 2nd thermal treatment portion 30 of the downstream adjacency of coated technique portion 28 with above-mentioned the 1st thermal treatment portion 26, the connecting gear 90 of longitudinal type is set between two process production line A, B, locate to be provided with a side multi-level unit portion (TB) 88 in process production line A one side (end), locate to be provided with the opposing party's multi-level unit portion (TB) 92 in process production line B one side (front end).

Though omit among the figure, also can be for example in the multi-level unit portion (TB) 88 of process production line A one side, pass through unit (PASS) what subordinate placed that substrate handover uses, thereon for example three grades be stacked with the heating unit (PREBAKE) that prebake conditions is used.And, can also be in the multi-level unit portion (TB) 92 of process production line B one side, pass through unit (PASS) what subordinate placed that substrate handover uses, the stacked cooling unit of one-level (COL) thereon, two-stage is stacked with the heating unit (PREBAKE) that prebake conditions is used thereon again.

Connecting gear 90 in the 2nd thermal treatment portion 30 is that unit and coated technique portion 28 and developing process portion 32 carry out the handing-over of substrate G with a slice via two multi-level unit portions (TB) 88,92 unit (PASS) that passes through separately not only, also can be that unit carries out the handing-over of substrate G with auxiliary transmission container 40 or interface described later station (I/F) 18 of transmitting in the space 38 with a slice.

On the process production line B of downstream portion, on one side developing process portion 32 comprises that transmitting substrate G with horizontal posture on one side carries out development treatment unit a series of development treatment operations, that be called as the continuous stream pipeline mode (DEV) 94.

Dispose the 3rd thermal treatment portion 36 across decoloration process portion 34 ground on the downstream of developing process portion 32.Decoloration process portion 34 possesses and is used for the i line UV illumination unit (i-UV) 96 that decolours and handle to processed of substrate G irradiation i line (wavelength is 365nm).

The 3rd thermal treatment portion 36 has the identical structure with above-mentioned the 1st thermal treatment portion 26 or the 2nd thermal treatment portion 30, is provided with the connecting gear 100 of longitudinal type and a pair of multi-level unit portion (TB) 98,102 of both sides before and after it along process production line B.

Though omit among the figure, also can be for example in the multi-level unit portion (TB) 98 of upstream side, place by unit (PASS) in subordinate, thereon three grades of heating units (POBAKE) that are stacked with back baking usefulness for example.And, can also be in the multi-level unit portion (TB) 102 in downstream, in subordinate, place baking unit (POBAKE), back, one-level is stacked with substrate handover and cooling pass through of usefulness, cooling unit (PASS, COL) thereon, and the heating unit (POBAKE) of usefulness is toasted in the stacked back of two-stage thereon again.

Connecting gear 100 in the 3rd thermal treatment portion 36 not only can also can be that unit carries out the handing-over of substrate G with the auxiliary transmission container 40 that transmits in the space 38 with a slice via the passing through unit (PASS) and be that unit carries out the handing-over of substrate G with i line UV illumination unit (i-UV) 96 and box body station (C/S) 14 respectively with a slice by, cooling unit (PASS, COL) of two multi-level unit portions (TB) 98,102.

Interface station (I/F) 18 has the conveyer 104 that the exposure device with adjacency conducts interviews, and disposes buffer stage (BUF) 105 around it, expansion, cooling class (EXT, COL) 106, and peripheral device 110.

On buffer stage (BUF) 105, be placed with the buffer pocket (not shown) of fixation type, the level that expansion, cooling class (EXT, COL) 106 are used for the substrate handover that possesses refrigerating function.When conducting interviews, substrate G and treating stations (P/S) 16 1 sides use.Peripheral device 110 can make for example will identify recording device (TITLER) and the stacked up and down structure of peripheral exposure device (EE).Conveyer 104 has for example transferring arm 104a that can keep substrate G, and with the exposure device 12 or each unit (BUF) 105 of adjacency, EXT, COL106, TITLER/EE110 carries out the handing-over of substrate G.

Should apply the processing sequence in the developing system shown in Fig. 3.At first, in box body station (C/S) 14, take out a slice substrate G the regulation box body C of connecting gear 22 from mounting table 20, move in the laser UV illumination unit (e-UV) 41 in the washing process portion 24 for the treatment of stations (P/S) 16 (step S1).

In laser UV illumination unit (e-UV) 41, substrate G is carried out the dry washing (step S2) of ultraviolet ray irradiation.In this ultraviolet ray washing, mainly be the organism of removing on the substrate surface.After the ultraviolet ray washing finishes, substrate G is shifted to the chip washing unit (SCR) 42 of washing process portion 24 by the connecting gear 22 of box body station (C/S) 14.

In chip washing unit (SCR) 42, as mentioned above, with horizontal posture substrate G is transmitted to go up at the upper surface (processed face) of substrate G along the direction of process production line A and implement the wiping washing or winding-up is washed while passing through transfer roller or travelling belt, thereby emboliform dirt is removed (step S3) from substrate surface.Then, handle, make substrate G drying by air knife etc. at last on one side after washing, also on one side substrate G horizontal transmission is implemented flushing.

The substrate G that has carried out carrying out washing treatment in chip washing unit (SCR) 42 is moved into passing through in the unit (PASS) 50 in the upstream side multi-level unit portion (TB) 44 of the 1st thermal treatment portion 26.

In the 1st thermal treatment portion 26, substrate G is touring in the unit of regulation with regulated procedure by connecting gear 46.For example, substrate G from moving into one of heating unit (DHP) 52,54 by unit (PASS) 50, accepts processed (step S4) at this at first.Then, substrate G is moved in one of cooling unit (COL) 62,64, at this substrate temperature that is cooled to stipulate (step S5).Afterwards, substrate G is moved into coherent unit (AD) 56, accepts hydrophobization at this and handles (step S6).After this hydrophobization processing finished, substrate G was cooled to the substrate temperature (step S7) of regulation in one of cooling unit (COL) 62,64.At last, substrate G immigration is belonged to passing through in the unit (PASS) 60 of downstream multi-level unit portion (TB) 48.

So, in the 1st thermal treatment portion 26, substrate G is via connecting gear 46 contact arbitrarily between the multi-level unit portion (TB) 48 in (TB) 44 of multi-level unit portion of upstream side and downstream.In addition, the 2nd and the 3rd thermal treatment portion 30,36 also carries out identical substrates transmission action.

The substrate G of processing that accepts a series of heat or heat system in the 1st thermal treatment portion 26 as described above passes through the resist coating element (CT) 82 that unit (PASS) 60 is moved toward the coated technique portion 28 of downstream adjacency in the downstream multi-level unit portion (TB) 48.

Substrate G for example goes up the coating resist by spin lining method at substrate upper surface (processed face) in resist coating element (CT) 82, in the drying under reduced pressure unit of downstream adjacency (VD) 84, accept the dried of decompression then, afterwards, remove the resist (step S8) of removing unnecessary on the substrate circumference (not wanting) in the unit (ER) 86 at the edge of downstream adjacency.

Above-mentioned acceptance the substrate G that handles of resist coating be handed off to from drying under reduced pressure unit (VD) 84 adjacent the 2nd thermal treatment portion 30 that belongs to upstream side multi-level unit portion (TB) 88 pass through unit (PASS).

In the 2nd thermal treatment portion 30, substrate G is touring in the unit of regulation with regulated procedure by connecting gear 90.For example, substrate G moves into one of heating unit (PREBAKE) by unit (PASS) from this at first, the baking (step S9) after this accepts the resist coating.Then, substrate G is moved in one of cooling unit (COL), is cooled to the substrate temperature (step S10) of regulation at this.Afterwards, substrate G via or do not pass through unit (PASS) to the expansion of interface station (I/F) 18 1 sides, cooling class (EXT, COL) 106 handing-over via downstream multi-level unit portion (TB) 92 1 sides.

In interface station (I/F) 18, substrate G moves into the peripheral exposure device (EE) of peripheral device 110 from expansion, cooling class (EXT, COL) 106, when this acceptance is used to develop, remove exposure, be moved toward adjacent exposure device 12 (step S11) afterwards attached to the resist on the periphery of substrate G.

In exposure device 12, the resist on the substrate G is exposed into the circuit pattern of regulation.Then, the substrate G that finishes at pattern exposure turns back to interface station (I/F) 18 o'clock (step S11) from exposure device 12, at first moved in the sign recording device (TITLER) of peripheral device 110, at this, the information (step S12) of regulation on the record of the regulation position of substrate G.Afterwards, substrate G turns back to expansion, cooling class (EXT, COL) 106.Carry out the transmission of substrate G in the interface station (I/F) 18 and the visit of substrate G and exposure device 12 by conveyer (104).

In treating stations (P/S) 16, connecting gear 90 receives the substrate G after the exposure from expansion, cooling class (EXT, COL) 106 in the 2nd thermal treatment portion 30, joins to developing process portion 32 via the unit (PASS) that passes through in the multi-level unit portion (TB) 92 of process production line B one side.

In developing process portion 32, the substrate G that passes through unit (PASS) reception in this multi-level unit portion (TB) 92 is moved into the development treatment unit (DEV) 94.In development treatment unit (DEV) 94, substrate G is transmitted towards the downstream of process production line B in the mode of continuous stream waterline, develops in it transmits, a series of development treatment operations (step S13) such as flushing, drying.

In development treatment portion 32, the substrate G that has accepted development treatment is removed the decoloration process portion 34 of side adjacency downstream, handles (step S14) in this decolouring of accepting the irradiation of i line.Substrate G after decolouring is handled is handed off to upstream side multi-level unit portion (TB) 98 interior the passing through in the unit (PASS) of the 3rd thermal treatment portion 36.

In the 3rd thermal treatment portion (TB) 98, substrate G moves into one of heating unit (POBAKE) by unit (PASS) from this at first, accepts back baking (step S15) at this.Then, substrate G is moved in passing through in the downstream multi-level unit portion (TB) 102, the cooling unit (PASS, COL), is cooled to the substrate temperature (step S16) of regulation at this.The transmission of substrate G in the 3rd thermal treatment portion 36 is undertaken by connecting gear 100.

In box body station (C/S) 14 1 sides, connecting gear 22 is accepted the substrate G that all process steps of coating development treatment has finished from the passing through of the 3rd thermal treatment portion 36, cooling unit (PASS, COL), with the substrate G folding and unfolding accepted in any box body C (step S1).

In this coating developing system 10, in the development treatment unit (DEV) 94 of the present invention applicable to developing process portion 32.Below, illustrate that with reference to Fig. 4～Figure 13 the present invention is applicable to the embodiment in the development treatment unit (DEV) 94.

One-piece construction in the development treatment unit (DEV) 94 according to an embodiment of the present invention schematically is shown among Fig. 4.This development treatment unit (DEV) the 94th, along process production line B dispose a succession ofly form continuous transfer path 108 that along continuous straight runs (x direction) extends a plurality of, for example 8 assembly M1～M8 form.

Among these assemblies M1～M8, the assembly M1 that is positioned at upstream extremity constitutes substrate and moves into portion 110, thereafter continuous four assembly M2～M5 constitutes development section 112, thereafter assembly M6 constitutes rinse part 114 again, thereafter assembly M7 constitutes drying section 116 again, and last assembly M8 constitutes substrate and takes out of portion 118.

Move in the portion 110 at substrate, be provided with and be used for receiving from the substrate G of adjacent substrate delivery mechanism (not shown) handing-over and being displaced in liftable many lifter pins 120 on the transfer path 108 with horizontal posture.Take out of also to be provided with in the portion 118 at substrate and lift on substrate G and to the liftable many lifter pins 122 of adjacent substrate delivery mechanism (not shown) handing-over with horizontal posture.

If explanation in further detail, development section 112 is provided with pre-humidifying portion 124 on assembly M2, developer solution supply department 126 is set on assembly M3, M4, and developer solution whereabouts portion 128 is set on assembly M5.Pre-humidifying portion 124 is provided with one or more pre-humidifying liquid supply nozzle PN, and the nozzle outlet of this nozzle can be supplied for example pure water of pre-humidifying liquid to substrate along transfer path 108 two-way moving towards transfer path 108.Developer solution supply department 126 is provided with one or more developer solution supply nozzle DN, and the nozzle outlet of this nozzle can be along transfer path 108 two-way moving, supply developer solution towards transfer path 108.In this configuration example, be provided with developer solution supply nozzle DNa, the DNb that can move independently according to each assembly M3, M4.Developer solution whereabouts portion and pre-humidifying portion 124 are provided with the substrate leaning device 130 that is used to make substrate G inclination.

Rinse part 114 is provided with one or more washing fluid supply nozzle RN, and the nozzle outlet of this nozzle can be supplied for example pure water of washing fluid to substrate along transfer path 108 two-way moving towards transfer path 108.

On drying section 116, be provided with the steam cutter VN of one or more pairs of present embodiments along transfer path 108 in mode across transfer path 108, be used for carrying out mangle attached to the liquid on the substrate G (mainly being washing fluid).

On development section 112, rinse part 114, drying section 116, be respectively arranged with and be used to collect the dish 132,134,136,138 of falling the liquid under the transfer path 108.In more detail, in development section 112, be respectively equipped with special-purpose dish 132,134 in pre-humidifying portion 124 and developer solution supply department 126 and developer solution whereabouts portion 128, be provided with leakage fluid dram in the bottom of each dish 132,134,136,138, discharging tube 140,142,144,146 is connected in this.

On transfer path 108, as shown in figure 10, but be laid with the transfer roller 148 of approximate horizontal ground mounting substrate G with certain interval along process production line B.By the driving force of electro-motor (not shown), rotate transfer roller 148 via the gear train (not shown), substrate G along continuous straight runs is transmitted to assembly M8 from assembly M1.

In Fig. 4, pre-humidifying liquid supply nozzle PN, developer solution supply nozzle DNa, DNb and washing fluid supply nozzle RN move above transfer path 108 abreast by the SCP of nozzle scan mechanism, SCN, SCR and transfer path 108 respectively.

One configuration example of the SC of nozzle scan mechanism (SCP, SCN, SCR) has been shown among Fig. 5.This nozzle scan SC of mechanism has the nozzle transfer body 150 that is used to support movable nozzle N (PN, DNa, DNb, RN), above transfer path 108, guide the guide rail (not shown) of nozzle transfer body 150 abreast, and drive the scanning driving part 152 that nozzle transfer body 150 moves along this guide rail with transfer path 108.

Scanning driving part 152 be by will via one or more vertical support members 154 be combined in one or more endless belt 156 on the nozzle transfer body 150 and guide rail abreast (promptly and transfer path 180 abreast) be erected between driving wheel 158 and the engaged wheel 160, and driving wheel 158 actions are combined on the turning axle of electro-motor 162 and constitute.The rotary driving force of electro-motor 162 is transformed into the rectilinear motion of the nozzle transfer body 150 of length direction (directions X) via roller 158,160 and endless belt 156.By the rotational speed of control electro-motor 162, the translational velocity of nozzle transfer body 150 is adjusted to desirable value, by switching the sense of rotation of electro-motor 162, the straight line moving direction of changeable nozzle transfer body 150.

In nozzle transfer body 150, on the inwall of left and right sides face, be separately installed with the lifting drive division 166 that for example constitutes, between the lifting drive division 166 of its pair of right and left, flatly set up the horizontal supporting bar 168 that for example constitutes by hollow tube by actuators such as cylinders.And, the movable nozzle N of tubular is installed down with escape hole n on the bottom of the vertical support bar 170 that extends vertically downward at the central part from this horizontal supporting bar 168, for example constitute by hollow tube.The escape hole n of nozzle N both can be a plurality of through holes that can roughly form with certain interval on the scope of providing chemical liquid, the length direction at nozzle equably from the end to end of substrate G on the Width of transfer path 108, also can be one or more slits.

In nozzle transfer body 150, under can driving in the lifting of lifting drive division 170, movable nozzle N, when the substrate G on transfer path 108 discharges the high position for the treatment of fluid and do not discharge treating fluid, between the high position that transfer path 108 is kept out of the way, moves up and down via horizontal supporting bar 168 and 170 liftings of vertical support bar.Introduce from the flexible treating fluid supply pipe 172 that is arranged on the treating fluid source of supply (not shown) outside the transfer path 108 on one end of horizontal supporting bar 168.This treating fluid supply pipe 172 from horizontal supporting bar 168 and vertical support bar 170 by on the treating fluid introducing port that is connected nozzle N.

The outward appearance of drying section 116 middle and upper part steam cutter VNU has been shown among Fig. 6.As shown in the figure, steam cutter VNU with the horizontal direction (laterally) of direction of transfer quadrature but on have the nozzle body of growing crosswise that extends with the length of the end to end of covering substrate G at least.On the leading section (bottom) of this nozzle body, be formed with by a plurality of through holes that form at certain intervals that on the length direction of nozzle, extend or a jet hole or the escape hole 174 that slit constitutes.A place or many places on the upper surface of this nozzle body are connected with steam supply pipe 176.Water vapor by steam supply 178 (Fig. 7) of mechanism described later pressurization imports on the nozzle body of steam cutter VNU via steam supply pipe 176, sprays water vapor from the escape hole 174 of front end to the upper surface (processed portion) of substrate G.

As shown in Figure 7, the steam supply mechanism 178 under this embodiment is via water vapor generating unit 180, gas supply department 182 and pressure fan 184.Water vapor generating unit 180 has the heating of utilizing, wind-force or ultrasonic vibration etc. makes for example mechanism of evaporating pure water of liquid forcibly.Gas supply department 182 is with the gas (or nitrogen) of normal pressure or malleation supply cleaning.Pressure fan 184 for example is made of fan blower or fan, will be taken into input one side from the water vapor of water vapor generating unit 180 with from the gas of gas supply department 182, discharges the water vapor/gas mixture body that boosts from exporting a side.Water vapor/gas mixture the body of discharging from output one side of pressure fan 184 is fed on the nozzle body of steam cutter VNU by steam supply pipe 176.

The nozzle body of steam cutter VNU has will be from the steam introducing port 186 that the next water vapor of pressure fan 184 force feeds/the gas mixture body imports, temporarily store from the surge chamber 188 of the water vapor/gas mixture body of this steam introducing port 186 importings, and with the ejection portion 190 that water vapor/the gas mixture body outwards blows out, the cross section is taper in this surge chamber 188.Ejection portion 190 fronts in surge chamber 188 are equipped with the porous plate 192 that rectification is used.

By the growing amount or the generating rate of the water vapor in the control water vapor generating unit 180, scalable is water vapor concentration from water vapor/gas mixture body that steam cutter VNU sprays.By the discharge pressure or the discharge rate of control pressure fan 184, scalable is from the discharge pressure or the discharge rate of the water vapor/gas mixture body of steam cutter VNU injection.

Bottom steam cutter VNL also can have the identical structure with top steam cutter VNU, acceptance from the water vapor/gas mixture body of the same steam supply mechanism supply of above-mentioned steam supply mechanism 178, from the ejiction opening of front end lower surface (back side) ejection water vapor to substrate G.

The steam cutter VNU of present embodiment, the configuration configuration example of VNL have been shown among Fig. 8 and Fig. 9.In this configuration structure, adopted the form that on direction of transfer, bottom steam cutter VNL is biased in the downstream of top steam cutter VNU.Two steam cutter VNU, VNL almost parallel in the plane parallel with direction of transfer, and with respect to transversely slantingly configuration (Fig. 9) about transfer path 108, with the vertical plane of transfer path quadrature in, with opposite with direction of transfer towards, to the posture configuration (Fig. 8) of substrate G ejection gas.In addition, in this embodiment, " left side " and " right side " is benchmark (preceding) with direction of transfer (directions X).

Below, the effect of this development treatment unit (DEV) 94 is illustrated.Substrate is moved into portion 110, and to be unit with a slice accept substrate G and be displaced on the transfer path 108 from adjacent substrate delivery mechanism (not shown).The roller 148 (Figure 10) that is used to constitute transfer path 108 is via above-mentioned gear train, rotates under the effect of the rotary driving force of electro-motor, so the substrate G that is placed on the transfer path 108 is transmitted to adjacent development section 112 immediately.

In development section 112, substrate G is at first moved into pre-humidifying portion 124, sprays for example pure water of low concentration as pre-humidifying liquid from pre-humidifying liquid supply nozzle PN in being transmitted by roller.In this embodiment, nozzle PN moves horizontally along transfer path 108 under the turntable driving of the SCP of nozzle scan mechanism described in Fig. 5 on one side, on one side upper surface (processed face) the ejection pre-humidifying liquid of substrate G in transmitting.Pre-humidifying liquid of meeting substrate G and dispersing outside substrate or the pre-humidifying liquid of not meeting substrate G are collected in the pre-humidifying liquid dish 132 that is arranged at below the transfer path 108.

Shown in Figure 10 (A), under the direction setting one-tenth that will discharge pre-humidifying liquid towards the substrate G on the transfer path 108 and nozzle PN the is scanned situation opposite with substrate transfer direction, nozzle N (PN) scans the rear end with the relative velocity (vN+vG) of nozzle scan speed v N and substrate transfer rate vG addition from the front end of substrate G, even the size of substrate G increases, also can be with pre-humidifying liquid that substrate G processed (resist surface) is all moistening at short notice.

In pre-humidifying portion 124, when substrate G arrived the assigned position in downstream, 130 actions of substrate leaning device were lifted substrate G from transfer path 108, it is receded.According to the inclination posture of this substrate G, residual or flow to the substrate rear attached to the major part of the pre-humidifying liquid on the substrate G, be recovered in the pre-humidifying liquid dish 132.

Having accepted substrate G after pre-humidifying as described above is handled in pre-humidifying portion 124 is placed on the transfer path 108 and is moved in the developer solution supply department 126.In developer solution supply department 126, during by initial assembly M3, spray developer solution from developer solution supply nozzle DNa, during by assembly M4, also spray developer solution then from developer solution supply nozzle DNb.Each developer solution supply nozzle under the effect of the turntable driving of the described nozzle scan SCN of mechanism of Fig. 5, is moving horizontally upper surface (processed face) the ejection developer solution of the substrate G in transmitting with roller on one side at DNa, DNb on one side along transfer path 108 above the transfer path 108.The ejection of this developer solution and fall liquid outside the substrate G and be collected in the developer solution dish 134 that is arranged at below the transfer path 108.

Same with above-mentioned pre-humidifying portion 124, even in developer solution supply department 126, also can shown in Figure 10 (A), will and make the direction setting of nozzle DN scanning become opposite to the ejection developer solution of the substrate G on the transfer path 108 with substrate transfer direction.So, nozzle DN scans the rear end with the relative velocity (vN+vG) of nozzle scan speed v N and substrate transfer rate vG addition from the front end of substrate G, even the size of substrate G increases, also can be at short notice to go up the supply developer solution to substrate G processed (resist surface).

In this embodiment, because according to assembly M3, M4 setting developer solution supply nozzle DNa, DNb and the SCN of nozzle scan mechanism separately, so can be in time, on the space every with the compartment of terrain supply of the substrate G on transfer path 108 for several times developer solution, and can for the first time and for the second time the time, change the characteristic (concentration etc.) of developer solution.

In developer solution supply department 126, as mentioned above, the substrate G that has supplied developer solution on whole processed intactly is placed on the transfer path 108 and is moved in the developer solution whereabouts portion 128.Then, in arriving developer solution whereabouts portion 128 during the assigned position in downstream, be arranged on this substrate leaning device 130 actions, substrate G is lifted from transfer path 108, square neck is oblique forward along direction of transfer to make substrate G, and developer solution supply department 126 1 sides of operation became upside before soon substrate G was inclined to and carries out.Because this inclination posture, the most of developer solution on the substrate G flows to substrate the place ahead, is recovered in the developer solution dish 134.So, because substrate G is tilted, so that developer solution supply department 126 1 sides of operation become upside before carrying out, so when in developer solution whereabouts portion 128, substrate G being tilted to carry out mangle, can reduce be developed 134 bounce-backs of liquid dish liquid attached to the possibility on the substrate G of developer solution supply department 126 1 sides.

Having carried out the supply of above-mentioned developer solution and the substrate G after the recovery in development section 112 is moved in the rinse part 114 along transfer path 108, in rinse part 114, under the effect of the turntable driving of the above-mentioned SCR of nozzle scan mechanism, upper surface (processed face) the ejection washing fluid that washing fluid supply nozzle RN moves horizontally the substrate G in transmitting on one side along transfer path 108 on one side is pure water for example.Falling washing fluid outside the substrate G is collected in the washing fluid dish 136 that is arranged at below the transfer path 108.

In rinse part 114, also can shown in Figure 10 (A), will and make the direction setting of nozzle RN scanning become opposite to the ejection developer solution of the substrate G on the transfer path 108 with substrate transfer direction.So, nozzle RN scans the rear end with the relative velocity (vN+vG) of nozzle scan speed v N and substrate transfer rate vG addition from the front end of substrate G, even the size of substrate G increases, also can promptly carry out the displacement (development stops) of washing fluid at short notice to substrate G whole processed (resist surface) supply washing fluid.In addition, also the washing fluid supply nozzle (not shown) that is used to wash the back side of substrate G can be arranged on transfer path 108 below.

The substrate G of the flushing operation that is through with above-mentioned in rinse part 114 is placed on the transfer path 108 and is moved in the drying section 116.In drying section 116, as Fig. 4 and shown in Figure 8, owing to the sharp water vapor stream of cutter shape is mapped on the upper surface (processed face) and the back side of substrate by the cutter of steam up and down VNU, the VNL that is arranged on the assigned position with respect to substrate G, thereby will removes (mangle) from the substrate rear attached to the liquid on the substrate G (mainly being washing fluid) in transmission on the transfer path 108.

At this, the effect of the steam cutter mechanism in the drying section 116 of this embodiment is described in detail.As shown in Figure 8, substrate G by two steam cutter VNU, VNL spoons washing fluid in the flushing handling part M6 of prime, form with one or more liquid film RU on substrate upper surface is attached with washing fluid, and also many places are attached with the drop RL of washing fluid on the substrate lower surface.

Shown in Figure 11 (A), when substrate G passes through two-way steam cutter VNU, VNL on transfer path 108, top steam cutter VNU is to spray water vapor from oblique upper to the upper surface of substrate G in the opposite direction with the sender, and bottom steam cutter VNL is to spray water vapor from the lower surface of oblique direction substrate G down in the opposite direction with the sender.So, on the upper surface of substrate G, shown in Figure 11 (B), under the pressure of water vapor stream, the liquid film RU of washing fluid overcomes surface tension and is pushed to the substrate rear, and major part is fallen outside the substrate from the substrate rear end, and a part is back on the substrate lower surface.Then, on the lower surface of substrate G, shown in Figure 11 (C), under the pressure of water vapor stream, the drop RL of washing fluid is compiled to the substrate rearward end, almost all is pulled to outside the substrate G from the substrate rear end with the part that refluxes from substrate.The liquid that is pushed out into outside the substrate G falls because of gravity, is collected in the dish 138.

Like this, in the present embodiment, owing on the surface, be attached with the substrate G ejection water vapor of washing fluid RU, RL by steam cutter VNU, VNL, under the pressure of water vapor stream, washing fluid is scanned out from substrate, will become half-dried or undried state so leave the substrate surface of the vestige that has scanned out washing fluid.That is, because a part that is sprayed onto the water vapor on the substrate G liquefies on substrate surface, so even washing fluid is scanned out, substrate surface can bone dry yet, forming is the state that is covered by extremely thin moisture film M.Therefore, even in the mist that produces because of dispersing of washing fluid, exist around the downstream (the place ahead one side of direction of transfer) of arriving steam cutter VNU, VNL attached to the part on the substrate surface, owing in moisture film M, disperseing, so can not produce scar.And, also among moisture film M, disperse from the resist film of substrate surface, particularly upper surface (processed face) or the liquid of counterdie stripping, so can aggegation and produce residue.On-chip moisture film M by air dry, second can almost all disappear to tens of through 10 seconds because extremely thin and also be easy to evaporation in atmosphere.

And, in the present embodiment, on direction of transfer, has locational biasing by making between top steam cutter VNU and the bottom steam cutter VNL, at the upper surface of substrate G and the alveolar fluid clearance on the lower surface and even scan out and give temporal deviation, therefore can carry out the mangle of substrate rear end well, prevent and reduce near the residual of the liquid substrate rear end.

In addition, in this embodiment, because two steam cutter VNU, VNL are with respect to the left and right sides transverse pitch of transfer path 108 with the state that is parallel to each other, so as shown in figure 12, on the upper surface and lower surface of substrate G, liquid RU, RL rely on the identical corner part (being the corner part in left side among Figure 12) of substrate rearward end, can (direction of arrow A) carry out mangle on diagonal.At this moment, as shown by arrow B, flow along the substrate rear end, promote mangle by this impetus that flows from the liquid of corner part (right hand corner portion) side of an opposite side.

The substrate G that has carried out mangle at drying section 116 intactly is placed on and is admitted to substrate on the transfer path 108 and takes out of portion 118.Substrate is taken out of portion 118 and is had with substrate and move into the identical structure of portion 110, and just substrate transfer direction is opposite in moving into and taking out of, and the portion of moving into similarly moves with substrate.Promptly, the lifter pin 122 that substrate handover is used is being lower than the position standby of transfer path 108, wait for that substrate G sends from upstream side (drying section 116), when the assigned position directly over the substrate G arrival lifter pin 122, lifter pin 122 ejects upward, lift substrate G with horizontal posture, be handed off on the adjacent substrate delivery mechanism (not shown).

Take out of substrate G that portion 118 takes out of accepts the irradiation of i line in the adjacent decoloration process portion 30 in downstream decolouring by substrate and handle, be sent to the 3rd thermal treatment portion 36 afterwards.In the 3rd thermal treatment portion 36, as mentioned above, at first accept the back baking at heating unit (POBAKE).Therefore, in the moment in moving into the 3rd thermal treatment portion 36, even substrate G goes up the residual moisture film M that has, making substrate surface by heat treated (back baking) is the force drying state.Therefore, even the mangle in drying section 116 is insufficient, promptly substrate G goes up the residual thicker liquid film that has, and also can not bring special obstacle.

In this development treatment unit (DEV) 94, interval with regulation separates a plurality of substrate G, on transfer path 108, transmit on one side on one side at developer solution supply department 126, developer solution whereabouts portion 128, rinse part 114, and sequentially implement each in the drying section 116 and handle, can realize the high-level efficiency of duct type or the development treatment operation of high-throughput.

Particularly, in pre-humidifying portion 124, developer solution supply department 126 and rinse part 114, by nozzle PN, DNa, DNb, RN to the substrate G providing chemical liquid (pre-humidifying liquid, developer solution, washing fluid) on the transfer path 108 are scanned along transfer path 108 above transfer path 108, even the size of substrate G increases, the transfer rate of transfer path 108 does not increase, and can promptly not have the ground of omission providing chemical liquid at short notice on whole processed of substrate yet.Particularly in developer solution supply operation, owing to can shorten the mistiming for the treatment of fluid supply between the end (leading section) of direction of transfer of substrate G and the other end (rearward end), the mistiming of promptly developing and beginning as much as possible, so can improve the homogeneity of on-chip development quality.

In addition, in the SC of nozzle scan mechanism of this embodiment, owing to be that nozzle N can be along the structure of transfer path 108 to twocouese scanning, so shown in Figure 10 (B), nozzle N can go up providing chemical liquid Q to whole processed of substrate G on one side to the scanning direction identical with substrate transfer direction on one side.In this case, nozzle scan speed v N ' is arranged to greater than substrate transfer rate vG.

The structure of this embodiment is for carrying out the development of spray pattern in pre-humidifying portion 124 and developer solution supply department 126.But it is simpler to change the liquid pool formula into, can in developer solution supply department 126 developer solution supply nozzle DNa, DNb be replaced with the discharge structure of containing the liquid type from aerosol type.And, in the liquid pool mode, do not need pre-humidifying portion 124.

In developer solution supply department 126, also can be the structure of omitting any (the normally DNb in downstream) among developer solution supply nozzle DNa, the DNb.And, the scanning area of each the movable nozzle N on the transfer path 108 can also be set for scope, and can be that the movable nozzle of adjacency enters the structure on the common guide rail mutually above assembly M1.

In the above-described embodiment, other various modification also can be arranged.For example, as shown in figure 13, do not make between top steam cutter VNU and the bottom steam cutter VNL to have biasing, and the equitant in vertical direction position of configuration, promptly face on the position (across the opposite location of transfer path 108) of transfer path 108.And, also can in the mangle that carries out with respect to the back side of substrate G, can adopt the dry gas of ejection or the common air knife EN of nitrogen as shown in figure 14.And, though not shown, can also be the structure that the space bar that prevents the mist diffusion is set in the downstream of steam cutter VN, or be provided for promoting the structure of other air knife mechanisms of substrate drying.

And, also can in part or all of pre-humidifying portion 124, developer solution supply department 126, rinse part 114, adopt the nozzle of fixation type.Drive system with transfer path 108 on direction of transfer is divided into several, and transmission action on the transfer path (speed, stop etc.) is respectively cut apart in independent control.Transfer path 108 is not limited in the transfer roller mode, also can be to separate the travelling belt mode that certain interval along continuous straight runs lays a pair of travelling belt.

Though above-mentioned embodiment has related to development treatment unit or developing apparatus, but the present invention also is applicable to the substrate processing device outside the developing apparatus, for example, the chip applicable to washing process portion 24 in the above-mentioned coating developing system washs unit (SCR) 42.That is, can carry out the dried identical in the downstream that chip washs the flushing handling part on the transfer path among unit (SCR) 42 with above-mentioned embodiment.And the present invention is applicable to the mangle of any liquid outside the washing fluid, and vapor source also can use the liquid outside the pure water.Processed substrate among the present invention is not limited in the LCD substrate, needing also to go for mangle or dry any processed substrate.

In substrate processing device of the present invention, preferably dried portion has the liquid evaporation of the regulation of making and vaporific steam generates mechanism, and this steam is generated the booster mechanism that steam that mechanism produces and other gases mix and boost.In this case, steam generates the steam growing amount in the mechanism or generating rate reaches and the blending ratio of other gases (for example air or nitrogen) by controlling, can adjust concentration to the steam of substrate ejection, and, by the discharge pressure in the control booster mechanism, can adjust pressure to the steam of substrate ejection.

As preferred implementation of the present invention, the structure of dried portion can have in the 1st position the 1st injection nozzle of the upper surface of direction substrate ejection steam from the transfer path, and along transfer path in the 2nd position in downstream, the 1st position the 2nd vapour injection nozzle from the lower surface ejection steam of the following direction substrate of transfer path.In this structure, owing on direction of transfer, have location bias between a pair of vapour injection nozzle about transfer path is configured in, so liquid sweeps and scans out and have deviation in time on the upper surface of substrate and the lower surface, therefore, can carry out the mangle of substrate rear end well, prevent or reduce near the residual of the liquid substrate rear end.

In addition, as another optimal way, can become to be parallel to each other with the 2nd vapour injection nozzle arrangement and with respect to horizontal oblique inclination about transfer path with the 1st.According to this structure, can on the upper surface of substrate and lower surface, liquid be collected on the identical corner part of substrate rearward end, on diagonal, carry out mangle effectively.

In dried portion, the vapour injection nozzle that is used to carry out the mangle at the lower surface of substrate or the back side can be replaced as the gas injection nozzle of the gas (for example air or nitrogen) outside the ejection steam.

In the present invention, owing to be for example after liquid handling, to spray steam to substrate, under the pressure of steam flow, liquid is scanned out from substrate by the vapour injection nozzle.So the substrate surface after the dried (the 2nd operation) becomes the half-dried or undried state that is formed with thin liquid film.Even on the substrate surface of mist attached to this leather hard, also owing in moisture film, disperseing or diffusion is dissolved, so can not produce scar.And, even have the liquid of impure composition, owing to also in moisture film, disperse, so can aggegation and produce residue from the substrate surface stripping.

In the present invention, because the liquid film that forms on the vestige that has scanned out liquid on the substrate is very thin, so even also evaporation easily in atmosphere can disappear at short notice by air dry.Remain in on-chip liquid forced evaporation in the heat treated of operation after can making.

In liquid handling device of the present invention, preferred construction is that dried portion has the liquid evaporation of the regulation of making and vaporific steam generates mechanism, and this steam is generated the booster mechanism that steam that mechanism produces and other gases mix and boost.In this case, steam generates the steam growing amount in the mechanism or generating rate reaches and the blending ratio of other gases (for example air or nitrogen) by controlling, and can adjust the concentration to the steam of substrate ejection.And, by the discharge pressure in the control booster mechanism, can adjust pressure to the steam of substrate ejection.

And, as preferred implementation of the present invention, dried portion can abovely have in the 1st position the 1st vapour injection nozzle of the upper surface of direction substrate ejection steam from the transfer path, and along transfer path in the 2nd position in downstream, the 1st position the 2nd vapour injection structure of nozzle from the lower surface ejection steam of the following direction substrate of transfer path.In this structure, on direction of transfer, has position deviation by making between a pair of vapour injection nozzle that transfer path disposes up and down, can be on the upper surface of substrate and the liquid on the lower surface be swept and are scanned out the deviation on the life period, thereby carry out the mangle on the substrate rearward end well, and can prevent or reduce near the residual of the liquid in substrate rear end.

And, as preferred implementation of the present invention, can become to be parallel to each other with the 2nd vapour injection nozzle arrangement and with respect to horizontal oblique inclination about transfer path with the 1st.According to this structure, can on the upper surface of substrate and lower surface, liquid be collected on the identical corner part of substrate rearward end, on diagonal, carry out mangle effectively.

In dried portion, the vapour injection nozzle that is used to carry out the mangle at the lower surface of substrate or the back side can be replaced as the gas injection nozzle of the gas (for example air or nitrogen) outside the ejection steam.

As described above, according to substrate processing device of the present invention, in the continuous stream pipeline mode, owing on the processed substrate after the liquid handling, spray steam, on-chip liquid is scanned out, the substrate surface dried is become leather hard,, improve and handle quality so can prevent from effectively on the substrate surface after the dried, to produce scar or residue.

Below, other embodiments of the present invention are illustrated.Figure 15 has adopted the vertical view of general configuration of the coating developing system 300 of embodiments of the present invention for expression.The primary structure of this coating developing system 300 integral body is identical with aforesaid coating developing system 10.

That is, the coating developing system 300 possess box body station (moving into, take out of portion) 201, treating stations (process part) 202, and and exposure device 204 between carry out the handing-over of substrate G interface station (interface portion) 203.In addition, in Figure 15, be that the length direction with resist coating, developing system 300 is a directions X, be the Y direction with direction vertical on the plane with directions X.

Box body station 201 possess and treating stations 202 between carry out the conveyer 211 that moving into of substrate G taken out of.Conveyer 211 has transferring arm 211a, can move on the transfer path 210 that is provided with on the Y direction as the orientation of box body C.

Treating stations 202 has assembly line A, B.Along assembly line A, be arranged with chip carrying out washing treatment unit (SCR) 221, the 1 thermal treatment portions 226 from box body station 201 1 sides towards interface station 203 1 sides, resist processing unit 223, and the 2nd thermal treatment portion 227.Along streamline B, be arranged with the 2nd thermal treatment portion 227 from interface station 203 1 sides towards box body station 201 1 sides, development treatment unit (DEV) 224, i line UV illumination unit (i-UV) 225, and the 3rd thermal treatment portion 228.

Part on the chip carrying out washing treatment unit (SCR) 221 is provided with laser UV illumination unit (e-UV) 222.Laser UV illumination unit (e-UV) the 222nd, for the organism of removing substrate G before the chip washing is provided with, i line UV illumination unit (i-UV) the 225th is provided with for the decolouring of developing handles.

In chip carrying out washing treatment unit (SCR) 221, on one side substrate G is carried out carrying out washing treatment such as dried to it on one side with the posture transmission of approximate horizontal.And, among development treatment unit (DEV) 224 also as the back describes in detail, on one side substrate G transmitted with the posture of approximate horizontal carry out the developer solution coating on one side, carrying out washing treatment and dried after developing.In these chip carrying out washing treatment unit (SCR) 221 and development treatment unit (DEV) 224, the transmission of substrate G is undertaken by for example transfer roller or travelling belt.And substrate G is by carrying out continuously with the connecting gear identical mechanism of development treatment unit (DEV) 224 to the transmission of i line UV illumination unit (i-UV) 225.

In resist processing unit 223, sequentially dispose the resist drop to the substrate G that remains on approximate horizontal, by making substrate G rotate resist application processing apparatus (CT) 223a that makes resist liquid form resist film spreading on the whole of substrate G with the rotating speed of regulation, carry out decompression dry device (VD) 223b of drying under reduced pressure to being formed at resist film on the substrate G, and by can removing device (ER) 223c attached to the periphery resist that the unnecessary resist on the periphery of substrate G is removed to the solvent ejecting head that four limits of substrate G are searched for.In resist processing unit 223, be provided with substrate G is removed the transferring arm that transmits between device (ER) 223c at resist application processing apparatus (CT) 223a, decompression dry device (VD) 223b, periphery resist.

Figure 16 is the side view of the 1st thermal treatment portion 226 1 sides.The 1st thermal treatment portion 226 has two thermal treatment unit pieces (TB) 231,232.Thermal treatment unit piece (TB) 231 is arranged on chip carrying out washing treatment unit (SCR) 221 1 sides, thermal treatment unit piece (TB) 232 is arranged on resist processing unit 223 1 sides, is provided with the 1st connecting gear 233 between these two thermal treatment unit pieces (TB) 231,232.

In thermal treatment unit piece (TB) 231, pass through unit (PASS) 261 from what begin down that the branch level Four is stacked with the handing-over of carrying out substrate G, to substrate G two of the baking processing dehydration baking unit (DHP) 262,263 that dewater, and adhere to processing unit (AD) 264 to what substrate G carried out that hydrophobization handles.In the thermal treatment unit piece (TB) 232, pass through unit (PASS) 265 from what begin down that the branch level Four is stacked with the handing-over of carrying out substrate G, two cooling units (COL) 266,267 that substrate G is cooled off, and adhere to processing unit (AD) 268 to what substrate G carried out that hydrophobization handles.

The 1st conveyer 233 is accepted from chip carrying out washing treatment unit (SCR) 221 via the substrate G that comes by unit (PASS) 261, substrate G moving between above-mentioned thermal treatment unit taken out of, and substrate G is via passing through unit (PASS) 265 handing-over to resist processing unit 223.

The 1st conveyer 233 has the guide rail 291 that extends up and down, Lift Part 292 along guide rail 291 liftings, can be rotatably set in the base component 293 on the Lift Part 292, and can keeping arm 294 that forward-reverse ground is provided with on base component 293, that keep substrate G.The lifting of Lift Part 292 is undertaken by motor 295, and the rotation of base component 293 is undertaken by motor 296, and moving forward and backward by motor 297 of substrate keeping arm 294 undertaken.Like this, the 1st conveyer 233 can move up and down, moves forward and backward and rotate mobile, can visit in the thermal treatment unit piece (TB) 231,232 any.

The 2nd thermal treatment portion 227 has two the thermal treatment unit pieces (TB) 234,235 that will implement heat treated thermal treatment unit lamination and constitute on substrate G.Thermal treatment unit piece (TB) 234 is arranged on resist processing unit 223 1 sides, and thermal treatment unit piece (TB) 235 is arranged on development treatment unit (DEV) 224 1 sides.Between these two thermal treatment unit pieces (TB) 234,235, be provided with the 2nd conveyer 236.

Figure 17 is the side view of the 2nd thermal treatment portion 227.In thermal treatment unit piece (TB) 234, pass through unit (PASS) 269 and three the prebake conditions unit (PREBAKE) 270,271,272 that substrate G carried out the prebake conditions processing from what begin down that branch level Four sequentially is stacked with the handing-over of carrying out substrate G.And, in thermal treatment unit piece (TB) 235, pass through unit (PASS) 273 from what begin down that branch level Four sequentially is stacked with the handing-over of carrying out substrate G, the cooling unit (COL) 274 of cooling substrate G, and two the prebake conditions unit (PREBAKE) 275,276 that substrate G carried out the prebake conditions processing.

The 2nd conveyer 236 is accepted from resist processing unit 223 via the substrate G that comes by unit (PASS) 269, substrate G moving between above-mentioned thermal treatment unit taken out of, substrate G via by unit (PASS) 273 to the handing-over of development treatment unit (DEV) 224, and substrate G delivering and receiving as the expansion of the substrate handover portion at interface station 203, cooling class (EXT, COL) 224 relatively.In addition, the 2nd conveyer 236 has the structure identical with the 1st conveyer 233, also can visit any unit in the thermal treatment unit piece (TB) 234,235.

The 3rd thermal treatment portion has two the thermal treatment unit pieces (TB) 237,238 that will implement heat treated thermal treatment unit lamination and constitute on substrate G.Thermal treatment unit piece (TB) 237 is arranged on development treatment unit (DEV) 224 1 sides, and thermal treatment unit piece (TB) 238 is arranged on box body station 201 1 sides.Between these two thermal treatment unit pieces (TB) 237,238, be provided with the 3rd conveyer 239.

Figure 18 is the side view of the 3rd thermal treatment portion 228.In thermal treatment unit piece (TB) 237, pass through unit (PASS) 277 from what begin down that branch level Four sequentially is stacked with the handing-over of carrying out substrate G, and substrate G carried out toast unit (POBAKE) 278,279,280 behind three of back baking processing.And, in thermal treatment unit piece (TB) 238, from under begin sequentially the branch level Four and be stacked with baking unit 281, back, carry out the passing through of the handing-over of substrate G and cooling, cooling unit (PASS, COL) 282, and substrate G carried out toast unit (POBAKE) 283,284 behind two of back baking processing.

The 3rd conveyer 239 is accepted from i line UV illumination unit (i-UV) 225 via the substrate G that comes by unit (PASS) 277, substrate G moving between above-mentioned thermal treatment unit taken out of, and substrate G is via by, cooling unit (PASS, COL) 282 handing-over to box body station 201.In addition, the 3rd conveyer 239 also has the structure identical with the 1st conveyer 233, also can visit any unit in the thermal treatment unit piece (TB) 237,238.

Between the assembly line A for the treatment of stations 202, B, be provided with space 240.And be provided with can be in this space 240 reciprocating transmission container (substrate mounting parts) 241.This transmission container 241 can keep substrate G ground to constitute, and carries out the handing-over of substrate G via transmitting container 241 between assembly line A, B.Substrate G is undertaken by above-mentioned the 1st to the 3rd conveyer 233,236,239 with respect to the handing-over that transmits container 241.

Interface station 203 has conveyer 242, buffer stage (BUF) 243, and possess refrigerating function, expansion, cooling class (EXT, COL) 244 as substrate handover portion.And the stacked up and down external device (ED) district 245 of sign recording device (TITLER) and peripheral exposure device (FE) is adjacent to configuration with conveyer 242.Conveyer 242 possesses transferring arm 242a, carries out moving into of substrate G by this transferring arm 242a between treating stations 202 and exposure device 204 and takes out of.

In the coating of the resist of this structure, developing system 300, at first, the substrate G that is configured among the box body C on the mounting table at box body station 201 is directly moved in the laser UV illumination unit (e-UV) 222 for the treatment of stations 2 by conveyer 211, carries out the chip pre-treatment.Then, substrate G is moved in the chip carrying out washing treatment unit (SCR) 221, and chip is cleaned.After the chip carrying out washing treatment, substrate G is for example passed through unit (PASS) 261 by what transfer roller took out of the thermal treatment unit piece (TB) 32 that belongs to the 1st thermal treatment portion 226.

Be configured in the dehydration baking unit (DHP) 262 that is sent to thermal treatment unit piece (TB) 231 by the substrate G on unit (PASS) 261 at first, carry out heat treated in any of 263, then, be sent to the cooling unit (COL) 266 of thermal treatment unit piece (TB) 232, cool off in any of 267, afterwards, be sent to adhering to the adhering in any of processing unit (AD) 268 of processing unit (AD) 264 or thermal treatment unit piece (TB) 232 of thermal treatment unit piece (TB) 231 for the deciding property that improves resist, adhere to processing (hydrophobization processing) by HMDS at this.At last, substrate G is sent in any of cooling unit (COL) 266,267 and cools off, and then is sent to the passing through in the unit (PASS) 265 of thermal treatment unit piece (TB) 232.The transmission of substrate G is handled and is all undertaken by the 1st conveyer 233 when carrying out this a succession of processing.

Below, the structure of development treatment unit (DEV) 224 is described in detail.Figure 19 is the side view of the general configuration of expression development treatment unit (DEV) 224, and Figure 22 is a diagrammatic top view.Development treatment unit (DEV) 224 is by Lead-In Area 224a, the 1st developer solution supply area 224b, and the 2nd developer solution supply area 224c, mangle/rinsing area 224d, the 1st rinsing area 224e, the 2nd rinsing area 224f, and dry section 224g constitutes.Lead-In Area 224a and thermal treatment unit piece (TB) 235 pass through unit (PASS) 273 adjacency, and dry section 224g and i line illumination unit (i-UN) 225 adjacency.

Be provided with the transfer roller device 214 that roller 217 is rotated and the substrate G phase prescribed direction on the roller 217 is transmitted by motor etc. is driven between by unit (PASS) 273 and i line UV illumination unit (i-UN) 225.By making this transfer roller device 214 actions,, can pass through the posture transmission substrate G of the inside of development treatment unit (DEV) 224 with approximate horizontal from passing through unit (PASS) 273 towards i line UN illumination unit (i-UV) 225.In order to be not easy to produce deflection etc. on substrate G, roller 217 is provided with the regulation number on the direction of transfer (directions X) of substrate G and the Y direction vertical with direction of transfer.

In addition, not shown transfer roller mechanism 214 among Figure 20.In development treatment unit (DEV) 224, also can drivable a plurality of transfer roller mechanism 214 be set independently by each treatment region.For example, substrate G is transmitted by the driving of the 1st motor, be to transmit between the 1st developer solution supply area 224b and mangle/rinsing area 224d by the driving of the 2nd motor, from the 1st rinsing area 224e to being that driving by the 3rd motor transmits the dry section 224g.It can be for example to carry out according to the different zone of the transfer rate of the substrate G among development treatment unit (DEV) 224 that the separation of this transfer roller mechanism 214 drives.

Possesses lifting lifter pin 216 freely by unit (PASS) 273.When lifter pin 216 was risen, substrate G was handed off on the lifter pin 216 from substrate keeping arm 294.Then, when making substrate keeping arm 294 that lifter pin 216 is descended, substrate G is placed on by on the roller 217 in unit (PASS) 273.By making transfer roller mechanism 214 action, with substrate G from taking out of to Lead-In Area 224a by unit (PASS) 273.

Lead-In Area 224a is as being provided with by the buffer area between unit (PASS) 273 and the 1st developer solution supply area 224b.This Lead-In Area 224a prevents that developer solution from polluting by unit (PASS) 273 to dispersing by unit (PASS) 273 etc. from the 1st developer solution supply area 224b.

The 1st developer solution supply area 224b is the zone of carrying out initial developer solution liquid (forming the liquid low-lying area) at the substrate G that sends from Lead-In Area 224a.The 1st developer solution supply area 224b has the main developer solution discharge nozzle 251a of substrate G coating developer solution and two nozzles of secondary developer solution discharge nozzle 251b (hereinafter referred to as " developing nozzle 251a, 251b "), guide rail 259 along the directions X extension, the cursor slide 258 chimeric with guide rail 259, the driving mechanism (not shown) that cursor slide 258 is moved to directions X along guide rail 259, and be installed in elevating mechanism (not shown) on the cursor slide 258.The free lifting but developing nozzle 251a, 251b are installed on this elevating mechanism.

Supply developer solution from not shown developer solution source of supply to developing nozzle 251a, 251b.For example, behind the interval of having adjusted developing nozzle 251a, 251b and substrate G by elevating mechanism, discharge developer solution while developing nozzle 251a, 251b are moved from developing nozzle 251a, 251b in the opposite direction along the sender with substrate G to substrate G, developer solution is coated on the substrate G.

As developing nozzle 251a, 251b, long (with reference to Figure 20) on the Width of useful substrates G, on its lower end, alongst be formed with slit-shaped escape hole, discharge the structure that is roughly banded developer solution from the escape hole of its slit-shaped.As developing nozzle 251a, 251b, also can adopt a plurality of circular row that for example form to export the escape hole that replaces slit-shaped with the interval of stipulating.

In the 1st developer solution supply area 224b, with the substrate G of developer solution liquid during mangle/rinsing area 224d transmits, developer solution might be trickled down from substrate G.In the 2nd developer solution supply area 224c,, the coating developer solution is replenished new developer solution to go up to substrate G in order to prevent in the transmission way of substrate G, developing reaction no longer to be carried out from the unrestrained developer solution of substrate G.

Therefore, in the 2nd developer solution supply area 224c, have with developing nozzle 251a, 251b with the developer solution postinjector 251c of spline structure with its length direction be the Y direction fixedly install.Be the developer solution of discharging ormal weight from developer solution discharge nozzle 251c to the substrate G that transmits by transfer roller mechanism 214 bandedly.But the 2nd developer solution supply area 224c is not necessary.

Developing reaction on the substrate G is being carried out during mangle/rinsing area 224d transmits from the 1st developer solution supply area 224b.On the contrary, consider the needed time of developing reaction, the speed that decision substrate G transmits to mangle/rinsing area 224d from the 1st developer solution supply area 224b.

In mangle/rinsing area 224d, G is transformed into inclination attitude with substrate, and the developer solution on the substrate G is flowed away, and then discharges washing fluid such as pure water, the developer solution on the rinse substrate G on the surface of the substrate G that remains on inclination attitude.In order to carry out this processing, mangle/rinsing area 224d has by substrate G is transformed into inclination attitude and to carry out the not shown substrate leaning device of mangle to being coated in developer solution on the substrate G, the flooding nozzle 252 of the washing fluid (pure water) of supply wash-out developer on the surface of the substrate G that remains on inclination attitude, the flooding nozzle arm 287 that keeps flooding nozzle 252,287 chimeric with the flooding nozzle arm, extend the guide rail 286 that ground is provided with along the direction of transfer of substrate G, and the driving mechanism 288 that flooding nozzle arm 287 is moved along guide rail 286.

By discharging washing fluid while flooding nozzle 252 is moved from flooding nozzle 252 from the top of substrate G along the surface of the substrate G that is remained on inclination attitude by the substrate leaning device to substrate G downwards, flushing remains in the developer solution on the substrate G.The translational speed of flooding nozzle 252 for example can be 500mm/ second.Like this, can remove developer solution on the substrate G at short notice.

For the once mobile washing fluid down at flooding nozzle 252 spreads all over all of substrate G, flooding nozzle 252 preferably adopts on the length direction of substrate G long, is the nozzle of discharging washing fluid bandedly.Also can make to be and discharge washing fluid vaporificly from flooding nozzle 252.

The removing in the processing of developer solution in mangle/rinsing area 224d, developer solution is removed in removing and not exclusively, therefore, in the 1st rinsing area 224e and the 2nd rinsing area 225f, further going up the supply washing fluid to substrate G while transmit substrate G of developer solution up hill and dale.

In the 1st rinsing area 225e, be provided with a plurality of flooding nozzle 253a, in the 2nd rinsing area 225f, also be provided with a plurality of flooding nozzle 253b.Flooding nozzle 253a, 253b are arranged on front one side and the back side one side of substrate G respectively with specified quantity.As flooding nozzle 253a, 253b, for the washing fluid of discharge on the whole, preferably adopt the Width (Y direction) of substrate G to go up length to the substrate G that transmits, roughly be the nozzle of discharging washing fluid bandedly.In addition, the 1st rinsing area 224e and the 1st rinsing area 224f also can be used as the rinsing area formation at a place.

Passed through among the dry section 224g of substrate G of the 2nd rinsing area 224f in transmission, with the speed of regulation transmit substrate G on one side to the front and back ejection dry gas of substrate G on one side, will blow off attached to the washing fluid on the substrate G.In order to carry out this processing, in dry section 224g, be provided with air knife 254a, 254b towards the substrate G injection air that is transmitted, fan blower 249 to air knife 254a, 254b supply air, control is from the emitted dose control device 247 of fan blower 249 to the flow of air knife 254a, 254b air supplied, flow velocity, blast etc., and the film thickness sensor 248 that is determined at liquid film (hereinafter referred to as " the moisture film ") thickness of the washing fluid that forms on the surface of the substrate G by air knife 254b.

Air knife 254a, 254b have the shape longer than the width of substrate G, can discharge air on the whole to the Width of substrate G.And air knife 254a, 254b install in the mode that the length direction of air knife 254a, 254b and substrate transfer direction are predetermined angular.Therefore, the lip-deep washing fluid of substrate G collects in the ora terminalis at rear under the effect of the dry air that blows out from air knife 254a, 254b, is blown off afterwards, so can prevent to adhere to unnecessary washing fluid on substrate G.

Towards the air that substrate G sprays, do not contain particle in order to make as much as possible, so in the air-supply pipe arrangement of fan blower 249 or binding fan blower 249 and air knife 254a, 254b, be built-in with filtrator from air knife 254a, 254b.Film thickness sensor 248 can be measured the thickness of moisture film at the number place of Y direction.As film thickness sensor 248, for example can adopt the interference fringe that presents on the surface of measuring substrate G and the sensor of refractive index, perhaps adopt the CCD camera.

When from air knife 254a, 254b during to substrate G ejection dry gas, lip-deep a part of washing fluid atomizing of substrate G, and be diffused into aerial.When make by air knife 254a, 254b substrate G intact do not parch dry after, when the mist of the place ahead wraparound of substrate transfer direction is gone up attached to substrate G, will produce watermarks such as scar.

Therefore, in dry section 224g, do not make the surface of substrate G intact do not parch dry.That is, at dry section 224g, behind the air knife 254b ejection dry gas that is arranged at substrate transfer direction the place ahead one side, residual on the surface of substrate G have a moisture film.The thin thickness unfertile land of this moisture film forms the degree that washing fluid can not fall from substrate G.For example, the thickness of moisture film can be the thickness from several microns to tens of microns so long as be formed on the concavo-convex degree that buries in moisture film of the developing pattern on the resist film and get final product.And the thickness of moisture film is uniform at substrate G on the whole preferably.

In dry section 224g, measure the thickness that is formed on the moisture film of substrate G formation behind the air knife 254b ejection dry gas by film thickness sensor 248, this measurement result is sent to emitted dose control device 247,247 controls of emitted dose control device are from the air output of fan blower 249 to air knife 254a, 254b, and the thickness that makes substrate G go up the moisture film that forms is setting value.Can make substrate G go up the thickness of the moisture film that forms by this FEEDBACK CONTROL for certain.

Under the residual situation that moisture film arranged on the substrate G, even the mist of washing fluid is once more attached on the substrate G, because this mist is taken into by moisture film, so prevented to produce watermark on substrate G.In addition, this moisture film preferably is not formed on the back side of substrate G.This is because when the back side of substrate G is moistening, the vestige of roller 217 will remain on the back side of substrate G, might reduce the cause of the quality of substrate G.

Under the situation that forms moisture film on the surface of substrate G, owing to do not need the lip-deep washing fluid of substrate G is blown off fully, so can reduce the amount of the dry gas that blows out from air knife 254a, 254b.For example, adopting under the situation of air as dry gas, adopting this air when fan blower is sent into the structure of air knife 254a, 254b, can reduce the operating load of fan blower.And, because by being formed on the static accumulation that the lip-deep moisture film of substrate G has reduced substrate G, so can also suppress the breakage of substrate G.

By experiment or experience draw for not forming watermark on the substrate G after forming the condition (from the air injection conditions of air knife 254a, 254b) of moisture film on the substrate G, for example can implement or omit the affirmation of the water film thickness that film thickness sensor 248 carries out.And, as air knife 254a, 254b, employing can change the structure of flow velocity of the air of injection in the longitudinal direction, consider the deflection of substrate G or the nowed forming of the washing fluid on the substrate G, also can reduce the thickness distribution of the moisture film of substrate G formation from the flow velocity of the dry gas of air knife 254a, 254b injection by the part change.

The substrate G of the dried that is through with in dry section 224g is sent in the i line UV illumination unit (i-UV) 225 by transfer roller mechanism 214.Substrate G begins from here to be sent in the back baking unit (POBAKE) 278,279,280 etc. and heat-treats, and is formed on moisture film on the substrate G this moment and is evaporated and removes.

The processing of substrate G is at first to be made to move into by the substrate G among unit (PASS) 273 by transfer roller mechanism 214 to pass through Lead-In Area 224a in the above-mentioned development treatment unit (DEV) 224, and moves into the 1st developer solution supply area 224b.Substrate G for example is 65mm/ second by unit (PASS) 273 to the transfer rate of the 1st developer solution supply area 224b from this.

Then, in the 1st developer solution supply area 224b, substrate G is remained on the state that stops at assigned position, with the speed of for example 240mm/ second developing nozzle 251a, 251b from the place ahead of substrate transfer direction towards rear moved on one side, on the surface of substrate G, apply developer solution on one side.Making substrate G is under the state that stops, and the drive controlling of developing nozzle 251a, 251b is easy.And, can stably make developer solution on substrate G, contain liquid.

Make transfer roller mechanism 214 action, transmit to the 2nd developer solution supply area 224c with the speed of the 46mm/ for example second substrate G that contains liquid that will in the 1st developer solution supply area 224b, be through with.By when the 2nd developer solution supply area 224c, replenish developer solution to substrate G at substrate G, the developer solution of trickling down from substrate G when replenishing substrate G transmission from developer solution postinjector 251c.

The substrate G that is sent among the 2nd developer solution supply area 224c further is sent to mangle/rinsing area 224d, at this, substrate G is changed over the inclination posture, and the developer solution on the substrate G is flowed away.In addition, the developer solution that flows away from substrate G is recovered and utilizes.When almost arriving certain angle of inclination with substrate G, with for example integral body be 20dm on one side ³/ minute discharge rate will discharge towards substrate G from the washing fluid of the regulation of flooding nozzle 252, on one side with the speed of 500mm/ for example second flooding nozzle arm 87 is moved along the surface of substrate G.

Then, substrate G is sent among the 1st rinsing area 224e with the speed of 46mm/ for example second, at this, with this transfer rate transmit substrate G and on one side to the surface of substrate G and the back side on discharge washing fluid on one side, remove attached to the developer solution on the substrate G.To move into the 2nd rinsing area 224f by the substrate G of the 1st rinsing area 224e, further wash processing at this.The transfer rate of substrate G cans be compared to the transfer rate of substrate G low (for example being 36mm/ second) in the 1st rinsing area 224e before most among the 2nd rinsing area 224f.Thereby can carry out more accurate flushing handles.

To move into dry section 224g by the substrate G of the 2nd rinsing area 224f.In dry section 224g, on one side with the speed of 46mm/ for example second transmit substrate G on one side from air knife 254a, 254b to the dry gas of substrate G ejection so that on the surface of substrate G the moisture film of formation specific thickness.The substrate G that is through with in the processing of dry section 224g is sent to by transfer roller mechanism 214 in the i line UV illumination unit (i-UV) 225, implements the ultraviolet treatment with irradiation of regulation at this.

Below, other embodiments of dry section 224g are illustrated.Figure 21 is the side view of other embodiments of expression dry section 224g ([" as dry section 224g ']), and Figure 22 is its vertical view.Dry section 224g ' has the substrate dried 246a of portion that is arranged on the 2nd rinsing area 224f one side and is arranged on the moisture film formation handling part 246b of i line UV illumination unit (i-UV) 225 1 sides.

The substrate dried 246a of portion has air knife 254a, 254b, fan blower 249, and emitted dose control device 247.These are identical with the device that is provided with among the dry section 224g shown in Figure 19 and Figure 20.In the substrate dried 246a of portion, go up the ejection air by adopting air knife 254a, 254b to substrate G, carry out the processing of blowing off with attached to the washing fluid on the substrate G.In order will to blow off fully attached to the washing fluid on the substrate G, can be from air knife 254a, 254b injection air, on the other hand, and in order on the surface of substrate G, to form the moisture film of specific thickness, also can be from air knife 254a, 254b injection air.

Form among the handling part 246b at moisture film, with the posture of approximate horizontal transmit substrate G by substrate dried portion 246a on one side by to substrate G go up supply water vapor and on the surface of substrate G form moisture film on one side.Therefore, moisture film forms the film thickness sensor 248 that handling part 246b has the thickness that is determined at the moisture film that forms on the substrate that has passed through the substrate dried 246a of portion, according to the measurement result of film thickness sensor 248 selectively to the water vapor supply nozzle 289a of part (comprised and do not parched dry part) the supply water vapor of the thickness no show setting of moisture film, to the water vapor generating apparatus 289b of water vapor supply nozzle 289a supply water vapor, and according to from the signal controlling of film thickness sensor 248 from the water vapor feeding controller 290 of water vapor generating apparatus 289b to the steam vapour amount of water vapor supply nozzle 289a supply.The water vapor that generates in water vapor generating apparatus 289b is supplied to water vapor supply nozzle 289a by nitrogen pressurization back.

Film thickness sensor 248 can be measured the thickness of moisture film in the many places of Y direction.The water vapor that generates in water vapor generating apparatus 289b is by nitrogen (N ₂) pressurize and then supply to water vapor supply nozzle 289a.Figure 23 further represents the key diagram of water vapor to the supply form of water vapor supply nozzle 289a in detail.Water vapor supply nozzle 289a becomes long in one direction shape by several jet elements that are provided with the water vapor escape hole 301 are set continuously along a direction.

In order to be provided with the pipe arrangement of supplying water vapor from water vapor generating apparatus 289b respectively to a plurality of jet elements 301, on these pipe arrangements, be respectively arranged with open and close valve 302 from a plurality of jet elements 301 difference injection water steams.The on-off action of open and close valve 302 is by 290 controls of water vapor feeding controller.Be circular cone spray shape injection water steam from the water vapor escape hole that is arranged on the jet element 301, go up ejection water vapor to substrate G.

Figure 24 is the key diagram (process flow diagram) of the treatment process among the expression dry section 224g '.At first,, towards substrate G ejection air washing fluid is blown off from substrate G from air knife 254a, 254b.Then, measure the thickness of the moisture film that forms on the surface of substrate G by film thickness sensor 248.

Measurement result at this film thickness sensor 248 shows that the lip-deep moisture state of substrate G is good, promptly on the surface of good substrate G, formed the roughly certain moisture film of thickness, the thickness distribution of this moisture film also is roughly under the situation of certain state, do not carry out water vapor from the injection of water vapor supply nozzle 289a, substrate G is taken out of to i line UV illumination unit (i-UN) 225 to substrate G.On the other hand, measurement result at film thickness sensor 248 shows that the lip-deep moisture state of substrate G is bad, promptly do not form the state of moisture film fully, the perhaps state of the local no show specific thickness of the thickness of moisture film, perhaps the film thickness distribution of moisture film exists under the situation of the state of large deviation very, spray water vapor from steam jet 289a to substrate G, thereby on substrate G, form certain thickness moisture film.

At this moment, owing to water vapor supply nozzle 289a is made of a plurality of jet elements 301, and discriminably from each jet element 301 injection water steam, so can be according to the measurement result of film thickness sensor 248, only to the thin part ejection water vapor of moisture film.Therefore, can not make the enlarged in thickness of moisture film integral body, can reduce the thickness distribution of moisture film.Then, the substrate G that has formed moisture film is taken out of to i line UV illumination unit (i-UV) 225.

Have in employing under the situation of dry section 224g ' of this structure, when passing through the substrate dried 246a of portion, even because of from the mist of the washing fluid that produces of air of air knife 254a, 254b ejection attached to after on the substrate G that is dried, since after moisture film be formed uniformly, so also can suppress the generation of watermark that mist causes etc.

In addition, as film thickness sensor, can adopt removable on the Y direction, by measure the sensor of the water film thickness of substrate G integral body along the Y scanning direction.Equally, as the water vapor supply nozzle, also can adopt removable on the Y direction, by forming along the Y scanning direction and selectively the nozzle of moisture film to the part supply water vapor of the thickness no show setting of moisture film.

Below, another embodiment of dry section 224g is illustrated.Figure 25 is another embodiment of expression dry section 224g side view of (as [dry section 224g "]).At dry section 224g " be provided with air knife 254a, 254b; and to the fan blower 249 of air knife 254a, 254b supply air; and; one side is provided with on the position of air knife 254b in substrate transfer direction the place ahead, is provided with the space bar 298 that space (front space) 299b with space (rear space) 299a of rear one side of substrate transfer direction and the place ahead one side separates.

At this dry section 224g " in, spray air from air knife 254a to substrate G at first.At this, the part (by the part of air knife 254a) of air is intact not to parch dryly for substrate G being gone up sprayed from air knife 254a, and the air capacity that control is sprayed from air knife 254a is promptly from the air capacity of fan blower 249 to air knife 254a air-supply.Therefore, even because of from air knife 254a to the mist of the washing fluid that substrate G ejection air produces attached to for example from air knife 254a forwards on the part of the substrate G of a side shifting, because residual on this part have moisture film, so prevented to produce watermark on substrate G.

Then, spray air from air knife 254b to the substrate G that has passed through air knife 254a.Though this moment is also because of producing the mist of washing fluid from substrate G to substrate G ejection air from air knife 254b, but because air sprays towards oblique rear from air knife 254b, so this mist can be by the space 299b diffusion forwards of the gap between air knife 254b and the substrate G, and space 299a diffusion rearward, and this mist can not be from rear space 299a space 299b diffusion forwards because of the existence of space bar 298.So, do not parch the dry mist that prevents attached on the substrate G while can adopt air knife 254a, 254b that substrate G is finished.

More than, though other embodiments of the present invention are illustrated, the present invention is not limited in this mode.For example, in the above description, be in order in dry section 224g, to make substrate G dry and adopted the situation of air to be illustrated, but also can adopt other gases, for example nitrogen makes substrate G drying.In this case, can adopt nitrogen feeding mechanism such as gas cylinder or nitrogen supply plant piping etc. to replace fan blower 249, by 247 controls of emitted dose control device from these nitrogen feeding mechanisms to the nitrogen supply of air knife 254a, 254b etc.

And, in the above description, owing to adopt pure water as washing fluid, so by forming the generation that moisture film has prevented watermark on the substrate G on the substrate G, but for example adopting the treating fluid outside the pure water to carry out under the situation of liquid handling, in order on substrate G, to form the film of this treating fluid, can on substrate, spray the steam for the treatment of fluid.

The present invention not merely is applicable to the LCD glass substrate, also goes for as the liquid handling of glass substrate, semiconductor wafer and other ceramic substrates etc. of other purposes and the dried that produces thereupon.

As mentioned above,, can prevent to produce watermark etc. on the substrate, improve the quality of substrate according to the present invention.And, under the situation of the liquid film that has formed treating fluid on the surface of substrate, reduced on-chip static accumulation, so substrate cracky not.In addition, under for the situation for the treatment of fluid on the substrate surface not being blown off fully, reduced the amount of employed dry gas, can reduce manufacturing cost forming liquid film on the substrate.

Claims (10)

1. providing chemical liquid on substrate, the method for treating liquids of handling comprises:

Posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carries out the 1st operation of liquid handling,

On one side transmit aforesaid liquid and handle the 2nd operation that the substrate that is through with adopts mode jet drying gas on above-mentioned substrate of the residual liquid film that above-mentioned treating fluid arranged on the surface of gas injection nozzle with above-mentioned substrate on one side with the posture of approximate horizontal,

Carry out the 3rd operation that heat treated makes the lip-deep treating fluid evaporation that remains in above-mentioned substrate by the substrate that above-mentioned the 2nd operation is through with.

2. method for treating liquids as claimed in claim 1, in above-mentioned the 2nd operation, in order to make the thickness of liquid film that on above-mentioned substrate, forms for stipulating, mensuration has been sprayed the thickness of the liquid film that forms on the part of dry gas by the above-mentioned gas injection nozzle, the dry gas scale of construction that blows out from the above-mentioned gas injection nozzle according to its measurement result adjustment.

3. providing chemical liquid on substrate carries out the liquid handling device of liquid handling, comprising:

Posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carries out the liquid handling portion of liquid handling,

Gas injection nozzle with jet drying gas on substrate, with the posture of approximate horizontal transmit dried portion that substrate that processing in aforesaid liquid handling part be through with on one side adopt above-mentioned gas injection nozzle to above-mentioned substrate on jet drying gas on one side,

In above-mentioned dried portion, in order on above-mentioned substrate, to form the liquid film of above-mentioned treating fluid, the emitted dose control device of the flow velocity of the dry gas that control is sprayed from the above-mentioned gas injection nozzle.

4. liquid handling device as claimed in claim 3,

Above-mentioned dried portion has the gas organization of supply to the dry gas of above-mentioned gas injection nozzle supply ormal weight, and measures and sprayed the sensor of the thickness of liquid film of formed treating fluid behind the dry gas from the above-mentioned gas injection nozzle to above-mentioned substrate,

The thickness of liquid film that above-mentioned emitted dose control device is measured according to the sensor is controlled from the flow of above-mentioned gas organization of supply to the dry gas of above-mentioned gas injection nozzle supply, so that make the thickness of thickness of liquid film for stipulating that forms on the surface of above-mentioned substrate.

5. providing chemical liquid on substrate, the method for treating liquids of handling comprises:

Posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carries out the 1st operation of liquid handling,

Handle the substrate that is through with the posture transmission aforesaid liquid of almost parallel on one side and adopt gas injection nozzle jet drying gas on above-mentioned substrate on one side, the 2nd operation that will blow off attached to the lip-deep treating fluid of above-mentioned substrate,

Supply water vapor on the surface by the substrate that is through with to above-mentioned the 2nd operation, on the surface of above-mentioned substrate, form the 3rd operation of moisture film,

Carry out the 4th operation that heat treated makes the lip-deep water evaporates of above-mentioned substrate by the substrate that above-mentioned the 3rd operation is through with.

6. method for treating liquids as claimed in claim 5,

In above-mentioned the 2nd operation, in order on the surface of above-mentioned substrate, to form the liquid film of above-mentioned treating fluid with the thickness of stipulating, adjust the dry gas scale of construction that blows out from the above-mentioned gas injection nozzle,

In above-mentioned the 3rd operation, while the thickness by measuring above-mentioned liquid film according to its measurement result selectively to the part supply water vapor of the thickness no show specific thickness of above-mentioned liquid film, be adjusted at the thickness of the liquid film that forms on the above-mentioned substrate.

7. providing chemical liquid on substrate carries out the liquid handling device of liquid handling, comprising:

Posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carries out the liquid handling portion of liquid handling,

Gas injection nozzle with jet drying gas on substrate, on one side adopt above-mentioned gas injection nozzle to above-mentioned substrate on jet drying gas by the substrate that is through with the processing in the posture transmission aforesaid liquid handling part of approximate horizontal on one side, the dried portion that to blow off attached to above-mentioned on-chip treating fluid

Supply water vapor on one side on above-mentioned substrate by on one side transmitting the substrate that has passed through above-mentioned dried portion with the posture of approximate horizontal, the moisture film that forms moisture film on the surface of above-mentioned substrate forms handling part.

8. liquid handling device as claimed in claim 7, above-mentioned dried portion has the gas organization of supply to the dry gas of above-mentioned injection nozzle supply ormal weight, mensuration has sprayed the sensor of the thickness of liquid film of formed treating fluid behind the dry gas from the above-mentioned gas injection nozzle to above-mentioned substrate, and the thickness of liquid film adjustment of measuring according to the sensor is the adjusting gear of specific thickness to the flows of dry gases of above-mentioned gas injection nozzle supply so that make the thickness of the liquid film that the surface of above-mentioned substrate forms from the above-mentioned gas organization of supply.

9. liquid handling device as claimed in claim 7, above-mentioned moisture film forms the sensor that handling part has the thickness of liquid film of measuring the above-mentioned treating fluid that forms on the substrate that has passed through above-mentioned dried portion, according to the measurement result of the sensor selectively to the water vapor supply nozzle of the part supply water vapor of above-mentioned liquid film no show setting.

10. providing chemical liquid on substrate carries out the liquid handling device of liquid handling, comprising:

Posture with approximate horizontal transmits substrate supply predetermined process liquid on above-mentioned substrate on one side on one side, carries out the liquid handling portion of liquid handling,

Gas injection nozzle with jet drying gas on substrate, the substrate that is through with the processing in the posture transmission aforesaid liquid handling part of approximate horizontal adopts above-mentioned gas injection nozzle jet drying gas on above-mentioned substrate on one side on one side, the dried portion that to blow off attached to the lip-deep treating fluid of above-mentioned substrate

In above-mentioned dried portion, in order not unroll to the place ahead of substrate transfer direction one side by the mist that adopts the above-mentioned gas injection nozzle treating fluid that jet drying gas produces on above-mentioned substrate, the space bar that on the position that is provided with the above-mentioned gas injection nozzle, the one side space, rear and the one side space, the place ahead of substrate transfer direction is separated.

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