TW530337B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
TW530337B
TW530337B TW091103129A TW91103129A TW530337B TW 530337 B TW530337 B TW 530337B TW 091103129 A TW091103129 A TW 091103129A TW 91103129 A TW91103129 A TW 91103129A TW 530337 B TW530337 B TW 530337B
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Taiwan
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liquid
substrate
filling
nozzle
processing
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TW091103129A
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Chinese (zh)
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Nobuo Yanagisawa
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Dainippon Screen Mfg
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3092Recovery of material; Waste processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Environmental & Geological Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

In a substrate processing apparatus, processing liquid can be supplied to the upper surface of the processed substrate at high speed. A slit shape discharge opening 24 extending perpendicularly to the moving direction of the substrate and a liquid supply nozzle 7 having a connection surface 30 and a liquid supply surface 31 subsequent to the discharge opening 24 are prepared in a substrate processing apparatus for supplying processing liquid to the upper surface of the substrate. The processing liquid expelled from the discharge opening 24 is spread over the connection surface 30 and retained in the liquid supply surface 31 by surface tension. The processing liquid retained in the liquid supply surface 31 is contacted with the substrate flatly and supplied to the surface of the substrate.

Description

530337 技術領域 相關基板 裴置用基 顯影、钱 理方法。 術】 裝置,譬 案曝光的 理之後, 基板顯影 膜已使圖 往填液漏 基板的一 決之課題 影裝置中 高效率, 能產生無 的顯影液 方法卻將 基板表面 課題乃在 基板上。 之手段】 五、發明說明(1) 【發明所屬 本發明係 對液晶顯示 圓等,施行 置及基板處 【習知之技 基板處理 後,於將圖 施行顯影處 製成圖案。 斗。對光阻 動輸送帶移 影液,並由 【發明欲解 在基板顯 大,俾可提 後端便有可 漏斗鎖喷出 液,但是此 此情況下, 影斑點。 本發明之 液於被處理 【解決課題 處理裝置及基 板、電.漿顯示 刻、光阻剝離 如基板顯影裝 被處理基板表 再將顯影液沖 處理裝置係具 案曝光的被處 斗的下方,然 端依序填液於 ] ,雖要求將被 但疋右Τ§3速填 法填液的現象 流量變大,便 使經填液的顯 將有部分顯影 ^處理方法,特別係供 器用基板、及半導體晶 處理等用的基板處理裝 置中,於形成光阻膜之 面上’填充顯影液,並 洗掉而在被處理基板上 有滚動輸送帶與填液漏 理基板,便利用滾動滾 後再從填液漏斗吐出顯 另一端。 處理基板的移動速度增 液的話,在基板前頭與 。此雖可認為將從填液 可在前頭與後端處亦填 影液從基板表面流失。 時間差異,而將產生顯 基板處理裝置中,可將處理液高速填530337 Technical Field Related Substrates Pei Chi Development, Money Management Method. Technology] After the device is exposed, for example, the substrate development film has made the problem of leaking the liquid into the substrate. The high-efficiency, non-defective developer solution can be used in the method. However, the problem of the substrate surface is on the substrate. Means] V. Description of the invention (1) [The invention belongs to the liquid crystal display circle, etc., and the device and the substrate. [Known technique After the substrate is processed, the pattern is developed on the drawing. Bucket. The photo-resistance conveyor belt is used to transfer the liquid, and the solution is large on the substrate, and there is a funnel-lock ejection liquid at the rear end. However, in this case, there is a shadow spot. The liquid of the present invention is disposed below the processing bucket [solving the problem processing device and substrate, electro-paste display engraving, photoresist peeling, such as substrate development, mounting the processed substrate table, and then exposing the developing solution to the processing device. However, the end is sequentially filled with liquid], although it is required to increase the flow rate of the liquid filling method of §§3 speed filling method, so that the display of the filled liquid will be partially developed ^ processing method, especially the substrate for the feeder In the substrate processing apparatus for semiconductor and semiconductor crystal processing, the surface on which the photoresist film is formed is filled with a developing solution and washed away. There is a rolling conveyor belt and a liquid-filled leakage substrate on the substrate to be processed, which is convenient for rolling. After rolling, spit out the other end from the filling funnel. If the moving speed of the processing substrate is increased, the front of the substrate and. Although it can be considered that the filling liquid can also be lost from the substrate surface at the front and rear ends. The time difference will produce a significant difference. In the substrate processing equipment, the processing liquid can be filled at high speed.

530337 五、發明說明(2) 、申請專利範圍第1項的基板處理裝置,係供將處理液填 液於基板上的基板處理裝置,乃具備有基板保持機構、填 ,噴嘴、及移動機構。基板保持機構係保持被處理基板的 機構。填液喷嘴係具有沿第一方向的細縫狀吐出口,並將 處理液填液於保持在基板保持機構上的基板表面上。 機構係將基板相對於填液喷嘴’朝交叉於第一方向的^二 液!嘴則在保持於基板保持機構上的基板: 冰留,且在基板上形成面狀填液的填液面。 夜予以 ::請專利範圍第!項的基板處理裝置中,保持於 段上的基板,利用移動機構而朝交叉於填液V嘴的 式進仃移動。此時,從填液噴嘴將吐出處理液,而、、狀防 :填:面中❾處理液便將面狀的接觸被處理基·: 處理裝置的話,滯留於填液面二圍:1項之基板 觸到被處理*板的填液*,因Λ 2面狀接 況可確實的填液於基板前頭;速移動的情 申明專利範圍第2項的基板處理裝置, 圍第1項的基板處理裝置中,填液噴嘴的吐二利範 填液面的基板移動方向下游端之端部處。 形成於 申請專利範圍第3項的基板處理裝 圍第1或2項的基板處理裝置中,填液噴嘴且右°月專利範 ”’導引於吐出口中的傾斜i路有將從外部所 利範圍第4項的基板處理裝置,係在申請專利範 i 第5頁 9H〇3129.ptd 530337 五、發明說明(3) 圍第1至3項中任一項的基板處理裝置中,填液噴嘴在吐出 口與填液面之間,具有供將從吐出口所吐出的處理液,導 引於填液面上的聯絡面。 申請專利範圍第5項的基板處理裝置,係在申請專利範 圍第1至4項中任一項的基板處理裝置中,填液噴嘴的填液 面形成平行於保持在基板保持機構上的基板表面。 申請專利範圍第6項的基板處理裝置,係在申請專利範 圍第1至5項中任一項的基板處理裝置中,填液喷嘴的填液 面第二方向寬度在10 mm以上且40 mm以下。當填液面的第二 方向長度在此範圍時,從吐出口所吐出的處理液,便將藉 由表面張力而輕易的停留於填液面上。 申請專利範圍第7項的基板處理裝置,係在申請專利範 圍第3項的基板處理裝置中,填液噴嘴的傾斜通路乃相對 填液面在1 0 °以上且5 0 °以下的角度。當傾斜通路相對於 填液面的角度在此範圍内時,從吐出口所吐出的處理液, 便將藉由表面張力而輕易的停留於填液面上。 申請專利範圍第8項的基板處理裝置,係在申請專利範 圍第4項的基板處理裝置中,填液喷嘴的聯絡面聯絡長度 在0 . 1 mm以上且3 mm以下。當聯絡面聯絡長度在此範圍内 時,從吐出口所吐出的處理液,便將藉由表面張力而輕易 的停留於填液面上。 申請專利範圍第9項的基板處理裝置,係在申請專利範 圍第1至8項中任一項的基板處理裝置中,填液噴嘴的吐出 口第一方向長度,較處理對象的基板在相同方向上的長度530337 V. Description of the invention (2) The substrate processing device of the first patent application scope is a substrate processing device for filling a processing liquid on a substrate, and is provided with a substrate holding mechanism, a filling nozzle, and a moving mechanism. The substrate holding mechanism is a mechanism that holds a substrate to be processed. The liquid-filling nozzle has a slit-shaped discharge port along the first direction, and fills the processing liquid on the substrate surface held on the substrate holding mechanism. The mechanism is to place the substrate in the first direction with respect to the liquid-filling nozzle ', and the two liquids intersect! The nozzle is on the substrate held on the substrate holding mechanism: ice remains, and a liquid-filled surface of a planar filling liquid is formed on the substrate. Ye give it :: Please patent No.! In the substrate processing apparatus of this item, the substrate held on the stage is moved toward the type that crosses the filling V nozzle by a moving mechanism. At this time, the treatment liquid will be discharged from the filling nozzle, and the shape of the filling liquid will be in contact with the substrate to be treated when the treatment liquid is in the surface: If it is a processing device, it will stay on the filling surface. If the substrate touches the filling liquid of the processed plate, the filling liquid can be surely filled on the front of the substrate due to the Λ 2 planar connection. The fast-moving case declares the substrate processing device of the second item of the patent scope, which surrounds the first item of the substrate. In the processing device, the end of the substrate in the downstream direction of the substrate moving direction of the Teflon liquid filling surface of the liquid filling nozzle. Formed in the substrate processing device of the patent application scope No. 3 and the substrate processing equipment No. 1 or 2, the liquid filling nozzle and the right angle of the patent range "'the inclined i-path leading to the discharge port will benefit from the outside. The substrate processing device of the fourth item is in the patent application. Page 5 9H〇3129.ptd 530337 V. Description of the invention (3) In the substrate processing device of any one of the items 1 to 3, the liquid filling nozzle Between the discharge port and the filling surface, there is a contact surface for guiding the processing liquid discharged from the discharge port to the filling surface. The substrate processing apparatus according to the scope of patent application No. 5 belongs to the scope of patent application. In the substrate processing apparatus of any one of items 1 to 4, the filling surface of the liquid filling nozzle is formed parallel to the surface of the substrate held on the substrate holding mechanism. The substrate processing apparatus of claim 6 is within the scope of patent application In the substrate processing apparatus according to any one of items 1 to 5, the width in the second direction of the filling surface of the filling nozzle is 10 mm or more and 40 mm or less. When the length in the second direction of the filling surface is within this range, from The processing fluid discharged from the discharge port will be borrowed The surface tension easily stays on the liquid filling surface. The substrate processing device of the patent application No. 7 is in the substrate processing device of the patent application No. 3, and the inclined path of the liquid filling nozzle is 1 relative to the liquid filling surface. An angle of 0 ° to 50 °. When the angle of the inclined path with respect to the filling surface is within this range, the processing liquid discharged from the discharge port will easily stay on the filling surface by surface tension. The substrate processing device with the scope of patent application No. 8 is the substrate processing device with the scope of patent application No. 4. The contact length of the contact surface of the filling nozzle is 0.1 mm or more and 3 mm or less. When contacting the contact surface When the length is within this range, the processing liquid discharged from the discharge port will easily stay on the liquid filling surface by surface tension. The substrate processing device with the scope of patent application No. 9 belongs to the scope of patent application No. 1 In the substrate processing apparatus of any one of 8 items, the length in the first direction of the discharge opening of the filling nozzle is longer than the length of the substrate to be processed in the same direction.

91103129.ptd 第6頁 530337 五、發明說明(4) — 覆蓋菩,丨月況下,因為基板的第一方向將全部被吐出口所 ;性㊣因此便可確實的將處理液填液於被處理基板上。 圍第厂』:?圍第10項的基板處理裝4 ’係在申請專利範 著移動項的基板處理裝置中,乃更具備有控制 處,力、# ^制機構。控制機構係在基板的前頭附近 設定為ί ΐ板的移動’而在基板的中央處則將基板的移動 速。芒价^速度,在基板的後端處則將基板的移動予以減 依此方式控制著基板.的移動的話’即便在 的ί板珂頭與後端處,亦可確實的進行填液。 圍第圍第11項的基板處理裝£,係在申請專利範 給某杯^ 項的基板處理裝置中,更具備有將供應 ^理r液體予以再生的再生機構°制再生機構所再$ 單=度從填液喷嘴中吐出。此情況下,因為經 =二:::’因為可再度利用使用過的處理⑯,因2 里的處理液’而充分的執行預供料。 / I ί f利範圍第1 2項的基板處理裝i,係供將處理液填 的基板處理裝置’乃具備有基板保持:構第 y 、攻、鳥第一填液喷嘴.、及移動機構。基板保持機槿 持被處理基板用的機構。第一填液喷嘴係具有沿第 ίΓΐ出口 ’並將處理液填液於保持在基板保 fit 板表面上。第二填液喷嘴具有朝第一方向延 :的細縫狀吐出σ。第二填液喷嘴係在交又於第一方向的 第一方向與第一填液噴嘴並列,在利用第一填液喷嘴而已 C:\2D-C0DE\91-05\91103129.ptd 第7頁 53033791103129.ptd Page 6 530337 V. Explanation of the invention (4)-Covering the pu, because in the first month, all the substrates will be spit out in the first direction; therefore, the processing liquid can be reliably filled in the liquid. On the substrate. Wai Di Factory ”:? The substrate processing device 4 'surrounding the tenth item is a substrate processing device with a patent application and a mobile item, and further has a control unit, a force, and a control mechanism. The control mechanism is set to "moving the plate" near the front of the substrate, and the speed of the substrate is set at the center of the substrate. In terms of speed, the movement of the substrate is reduced at the rear end of the substrate. If the movement of the substrate is controlled in this way, the liquid can be reliably filled even at the head and the rear end of the substrate. The substrate processing device of the eleventh item is included in the substrate processing device of a cup applied for a patent application, and is further equipped with a regeneration mechanism that supplies the liquid to be regenerated. = Degree spit out from the filling nozzle. In this case, the pre-supply is fully performed because the process = 2 ::: ’is used because the used process ⑯ can be reused, and the process fluid in 2’ is used. / I ί The substrate processing device i of the item 12 of the profit range is a substrate processing device for filling the processing liquid with a substrate holding: structure y, tap, bird first liquid filling nozzle, and moving mechanism . Substrate holding mechanism A mechanism for holding a substrate to be processed. The first filling nozzle is provided along the ΓΓΐ outlet ′ and fills the processing liquid on the surface of the substrate holding plate. The second filling nozzle has a slit-like discharge σ extending in the first direction. The second liquid-filling nozzle is juxtaposed with the first liquid-filling nozzle in a first direction crossing the first direction, and the first liquid-filling nozzle is used. C: \ 2D-C0DE \ 91-05 \ 91103129.ptd Page 7 530337

填液有處理液的基板表面上,在填液處理液。 將基板相對於第一與第二填.液喷嘴,朝相對於 動0 移動機構係 第二方向移 在申請專利範圍第1 2項的基板處理裝置中,利用 液喷嘴,從基板前頭部朝後端部,依序填充處理液,, 利用第二填液喷嘴,使經第一填液喷嘴而已填液的某^ 面再填液。依照申請專利範圍第丨2項的基板處理裴^二表 ”舌,因為藉由第一與第二填液喷嘴的二個喷嘴重複、广 因此即便在將基板高速移動的情況下,亦可確實、j 板前頭部與後端部的填液。 '仃基 申請專利範圍第1 3項的基板處理裝置,係在申& | # 圍第12項的基板處理裝置中,乃依第二填液噴嘴:吐出 與保持於基板保持機構上的基板表面之間的間隔, 一 填液喷嘴的吐出口與基板表面間的間隔更寬廣的 ^,一 置著第-填液噴嘴與第二填液喷嘴1照申請專利J圍西己 13項的基板處理裝置,因為第二填液噴嘴配置呈古於f 填液喷嘴,因此便可防止發生經第一填液噴嘴所填液 理液,被第二填液喷嘴抑流的現象。 申請專利範圍第1 4項的基板處理裴置,係在申浐 圍第12或13項的基板處理裝置中,第_填液噴嘴‘: 利範圍第1至11項中任一項所述的填液噴嘴。依照# 利範圍第1 4項的基板處理裝置的話,因太锋 口苟弟一填液嘖嘴乃 使基板面狀的接觸於處理液而填料,因+ + 一 、 口扣任兩迷移動某板 的情況下,即便基板前頭部與後端部亦均可確實的施行填On the surface of the substrate filled with the processing liquid, the processing liquid is filled. The substrate is moved relative to the first and second filling nozzles in the second direction relative to the moving mechanism system. The substrate processing apparatus in the first and second patent application scopes is applied by the liquid nozzle from the front of the substrate toward the front. The rear end portion is sequentially filled with the processing liquid, and a second liquid filling nozzle is used to refill a certain surface filled with liquid through the first liquid filling nozzle. According to the substrate processing item No. 2 in the scope of the patent application, two tongues are used, because the two nozzles of the first and second liquid filling nozzles are repeated and wide. Therefore, even when the substrate is moved at high speed, it can be sure. The filling liquid for the front and rear parts of the j plate. 'The substrate processing device of the 13th patent application scope of the patent application is based on the second filling liquid in the substrate processing device of the  Nozzle: the interval between the ejection and the substrate surface held on the substrate holding mechanism, the interval between the ejection outlet of the liquid-filled nozzle and the substrate surface is wider, and the first-filled nozzle and the second-filled nozzle are placed According to the patent application, the substrate processing device of the 13th item of J. West has been applied. Because the second liquid filling nozzle is configured to be older than the f liquid filling nozzle, it can prevent the liquid filling liquid that is filled by the first liquid filling nozzle from being discharged by the second liquid filling nozzle. The phenomenon that the liquid filling nozzle suppresses the flow. The substrate processing device No. 14 of the scope of application for patents is located in the substrate processing device of No. 12 or 13 of Shen Yuwei. Filling nozzle according to any one of the above items. According to # 利 范围 第In the case of the substrate processing device of item 4, because Taifeng Kou Di filled the liquid and pouted, so that the substrate was in contact with the processing liquid and filled the surface. Because of the + + one and two buckles, when moving a certain board, Even the front and back of the substrate can be reliably filled.

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申請專利範圍第15項的基板處 圍第丨2至“項中任一項的基板 【係J申 具有供將來自外部的處理液導引於吐Π中^ 路,處理液供應路則垂吉 # 中的處理液供應 表面。此,m 基板保持機構上的基板 表面幻月况下,因為從第二填液 : 液ΐ直的土出於基板上,因此便可抑制經第_ 填液的處理液,在第一 $ & f f 0 &贺鳴所 產生液體流動的現^。 的處理液流動方向上, 於ΠΓ』ί216項的基板處理方*,係將處理液填液 於基板表面上的方法,乃將具備有在第一方向上為長細縫 狀吐出口,與連續於吐出口之填液面的填液噴嘴,配置於 基板表面上方;從填液噴嘴的吐出口吐出處理液,並將處 理液面狀的滯留於填液面中;一邊此填液喷嘴與基板進行 相對移動,一邊使面狀滯留於填液面中的處理液,接觸於 基板表面上,而將處理液填液於基板表面上。依照申請專 利範圍第1 6項的基板處理方法的話,可達如同申請專利範 圍第1項之基板處理裝置的情況時,相同的作用功效。 申請專利範圍第1 7項的基板處理方法,係在申請專利範 圍第1 6項的基板處理方法中,乃處理液對基板表面的填 液,為在基板的前頭附近處,加速基板的移動,而在基板 的中央處則將基板的移動設定為一定速度,在基板的後端 處則將基板的移動予以減速。若依申請專利範圍第1 7項的 基板處理方法的話,便可達如同申請專利範圍第1 0項之基The substrate of the 15th scope of the patent application covers the substrate of any one of the items 2 to 2 (the J application has a processing solution for guiding the external processing liquid from the outside to the middle of the road), and the processing liquid supply path is weeping. # 的 treatment fluid supply surface. In this case, the substrate surface on the m substrate holding mechanism is in a phantom, since the second filling liquid: liquid straight soil comes out of the substrate, so the The processing liquid is the first liquid flow generated by He Ming. The processing liquid flows in the direction of the substrate processing method of item 216, and the processing liquid is filled on the substrate surface. In the above method, a liquid filling nozzle having a long slit-shaped discharge port in the first direction and a liquid filling surface continuous with the liquid discharge surface of the discharge port are disposed above the surface of the substrate; and the discharge process is performed from the discharge port of the liquid filling nozzle. Liquid, and the process liquid stays in the liquid-filled surface; while the liquid-filling nozzle moves relative to the substrate, the processing liquid stays in the liquid-filled surface in contact with the surface of the substrate, and the processing The liquid is filled on the surface of the substrate. According to the patent application The substrate processing method of the 16th item can achieve the same function and effect as the case of the substrate processing device of the patent application item 1. The substrate processing method of the patent application item 17 is in the patent application range. In the 16 substrate processing method, the filling liquid of the substrate surface by the processing liquid is to accelerate the substrate movement near the front of the substrate, and set the substrate movement to a certain speed in the center of the substrate. At the rear end, the movement of the substrate is decelerated. If the substrate processing method according to item 17 of the scope of patent application is used, it can reach the base of the scope of item 10 of the patent application.

C:\2D-C0DE\91-05\9U03129.ptd 第9頁 530337 五、發明說明(7) 板處理裝置的 申請專利範 於基板表面上 口的第 上具長 的第二 面上方 液喷嘴 著;一 一填液 一邊使 第一填 依照申 同申請 作用功 申請 於基板 口的第 上具長 的第二 方,並 吐出口 填液噴 液面上 一填液 細縫狀 方向上 ’並依 的吐出 邊使第 噴嘴的 第二填 液噴嘴 請專利 專利範 效。 專利範 表面上 一填液 細縫狀 方向上 依吐出 與基板 嘴的吐 ;一邊 情況時, 圍第1 8項 的方法, 喷嘴,設 吐出口的 ,與上述 吐出口與 口與基板 一填液喷 吐出口吐 液喷嘴與 而被填液 範圍第1 8 圍第1 3項 相同的作用 的基板處理 乃將在第一 置於基板表 第二填液喷 第一填液噴 基板表面間 表面間的間 嘴與基板進 出處理液, 基板進行相 上處理液的 項的基板處 之基板處理 功效。 方法, 方向上 面上方 嘴,在 嘴並排 的間隔 隔更寬 行相對 並填液 對移動 基板上 理方法 裝置的 係將處 具長細 ;將在 交叉於 ,且位 ,較上 廣的方 移動, 於基板 5 一邊 ,填液 的話, 情況時 理液填液 縫狀吐出 第一方向 第一方向 於基板表 述第一填 式配置 一邊從第 表面上; 在已利用 處理液。 便可達如 ,相同的 圍第1 9項的基板處理方法,係將處理液填液 的方法,乃將在第一方向上具長細縫狀吐^ 噴嘴,設置於基板表面上方;將在第一方向 吐出口的第二填液喷嘴,在交叉於第一方^ ’與第一填液喷嘴並排,且位於基板表面丄 口與基板表面間的間隔,較第一填液喷嘴的 表面間的間隔更寬廣的方式配置著;從第 出口吐出處理液,並使處理液面狀滯留於填 使第一填液噴·嘴與基板進行相對移動,—邊C: \ 2D-C0DE \ 91-05 \ 9U03129.ptd Page 9 530337 V. Description of the invention (7) The patent for the plate processing device applies to the liquid nozzle on the second upper surface of the upper surface of the substrate. ; Fill one by one while making the first fill according to the application of the same application to the second side with a long top on the substrate mouth, and spit out a filling slit in the direction of the filling liquid on the spray surface of the outlet filling liquid The second liquid-filled nozzle of the first nozzle has the patent effect. On the surface of the patent, a liquid-filled slit-like direction according to the liquid-filled spit is ejected with the substrate mouth; in the case of one side, the method around item 18, the nozzle is provided with a discharge port, and the above-mentioned discharge port is filled with liquid with the substrate. The ejection nozzle of the ejection outlet has the same function as the substrate to be filled in the liquid filling range No. 1 to No. 1 to No. 13. The substrate processing is to place the first filling liquid on the substrate surface, and the second filling liquid to spray the first filling liquid between the substrate surfaces. The substrate and the substrate enter and exit the processing liquid, and the substrate performs a substrate processing effect at the substrate where the item of the processing liquid is phased on. The method is to move the mouth upwards and upwards in the direction of the mouth. The rows of the mouths are spaced apart from each other in a wider row and filled with liquid. The system of the mobile substrate processing method device will be thin and slender; On the side of the substrate 5, if the liquid is filled, in the case, the physical liquid filling liquid is discharged in a slit-like first direction, the first direction is on the substrate, and the first filling arrangement is arranged on the side from the second surface; on the used processing liquid. It can be reached that the same substrate processing method around item 19 is a method of filling the processing liquid with a long slit-shaped discharge nozzle in the first direction, which is set above the surface of the substrate; The second liquid-filling nozzle that is ejected in the first direction intersects the first liquid-filling nozzle in a cross direction with the first liquid-filling nozzle, and is located at a gap between the opening of the substrate surface and the surface of the substrate, which is longer than the surface of the first liquid-filling nozzle. It is arranged in a wider interval; the processing liquid is discharged from the first outlet, and the processing liquid stays in a surface shape so that the first filling liquid nozzle and the substrate are relatively moved.

C:\2D-CODE\91-05\9ll03129.ptd 第10頁 530337C: \ 2D-CODE \ 91-05 \ 9ll03129.ptd Page 10 530337

板表面接觸於面狀滯留於填液面 面填液處理液;一邊使第二填液 -邊在已利用第一填液喷嘴而 二士,填液處理液。依照申請專利範 中的處理液,而對基 喷嘴與基板進行相對 被填液上處理液的基 圍第1 9項的基板處理 第1 4項之基板處理裝 置,係供將處理液填 有基板保持機構、填 係保持被處理基板的 細縫狀吐出口,並將 的基板表面上。移動 叉於第一方向的第二 基板保持機構上之基 於填液面且較填液面 在申請專利範圍第2 〇 出的處理液將被滯留 平行的接觸於基板, 專利範圍第2 0項的基 利範圍第1項之基板The surface of the plate is in contact with the surface and stays on the filling surface. The surface filling treatment liquid is used; while the second filling liquid is used, the treatment liquid is filled with the first filling nozzle. According to the processing liquid in the patent application, the substrate nozzle and the substrate are subjected to the substrate filling of the processing liquid on the filling liquid. The substrate processing item No. 14 of the substrate processing item No. 14 is for filling the processing liquid with the substrate. The holding mechanism and the filling system hold the slit-shaped discharge opening of the substrate to be processed, and place the substrate on the surface of the substrate. The processing liquid based on the liquid-filled surface, which is moved to the second substrate holding mechanism in the first direction and based on the liquid-filled surface and which is no. 20 out of the patent application range, will be held in parallel to contact the substrate. Base plate of the base range

番2 ^ °舌,便可達如同申請專利範圍 置的^兄日寺,相@的作用功效。 申請專利範圍第2〇項的基.板處理裝 液幹基板上的基板處理裝置,乃具備 液噴嘴、及移動機構。基板保持機構 機構。填液喷嘴係具有沿第一方向的 處理液填液於保持在基板保持機構上 機構係將基板相對於填液喷嘴,朝交 方向移動。填液噴嘴則略平行保持於 板’且具有朝下方的填液面,在相連 更上方位置處的面上,設有吐出口。 項的基板處理裝置中,從吐出口所吐 於填液面中,而被滯留的處理液將略 並將處理液填液於基板上。.依照申請 板處理裝置的話,便可達如同申請專 處理裝置的情況時,相同的作用功效 申請專利範圍第2 1項的基板處理裝置,係在申請專利範 圍第20項的基板處理裝置中,將依從細縫狀吐出口所吐^ 的處理液,利用表面張力而包圍填液面的方式構成填液喷 嘴。 ^Fan 2 ^ ° tongue, you can achieve the same effect as the patent application ^ Xiongri Temple, phase @. The substrate processing device for the substrate processing device of the patent application No. 20 has a liquid nozzle and a moving mechanism. Substrate holding mechanism Mechanism. The liquid-filling nozzle is provided with a processing liquid filled in a first direction and held on a substrate holding mechanism. The mechanism moves the substrate in an intersecting direction with respect to the liquid-filling nozzle. The liquid-filling nozzle is held on the plate ′ slightly in parallel and has a liquid-filling surface facing downward, and a discharge port is provided on the surface connected to the upper position. In the substrate processing apparatus of the item, the processing liquid is discharged from the discharge port into the filling surface, and the retained processing liquid is omitted and the processing liquid is filled on the substrate. According to the application of the board processing device, the substrate processing device with the same function and effect as in the case of applying for a special processing device can be applied to the substrate processing device of the 21st patent application scope, which belongs to the substrate processing device of the 20th patent application scope. The filling liquid is formed by the treatment liquid discharged from the slit-shaped discharge port so as to surround the filling surface by surface tension. ^

530337 五、發明說明(9) 範圍㈣項的基板處理裝置,係在中請專利範 員的基板處理裝置中,基板保持機構乃水平姿 心保持者基板,而填液面則朝下的略水平面。 【發明之實施形態】 〔第一實施形態〕 〔整體構造〕 二所示太乃Λ發明之基板處理裝置-實施形態的基板顯 …衣置。本貫施形態的基板顯影裝置,主 液儲存槽1、基板處理部2、控制機 ·"〜 影液儲在f % 校制機構3、及再生系統4。顯 四ΐ ϊ影液的裝置,乃儲存著如厕(氫氧 蚀Ζί 影液。基板處理部2係供在對光阻膜e 板顯影用的裝置。被處理Α柄伤* = ρ,夜而將被處理基 槽1、A板,理二,控制機構3係控制著顯影液儲存 腦、纪;/箄=及再生系統4的裝置,乃具備有微電 用",、員衫液的驗度、疲勞度(光阻f 汀便 液儲存槽1中的裝置。 ^ ,。後再度返回顯影 顯影液儲存槽1透過配管6而連接於 管6中途設有泵5及過濾器1〇。當驅動^ : ?二在配 與過濾器10,將顯影液儲存槽“動旦泵5 % ’便經由配管6 部2。此外,•影液儲存槽!貝:透、、: '液供應給基板處理 部2。在基板處理部2中砍名官9連接於基板處理 配管9返回顯影液儲存槽使用^顯影後的顯影液,經由530337 V. Description of the invention (9) The substrate processing device of the scope item (1) is the substrate processing device of the patent applicant. The substrate holding mechanism is a horizontal attitude holder substrate, and the liquid filling surface is slightly downward. . [Embodiment of the Invention] [First Embodiment] [Overall Structure] The substrate processing apparatus of the invention shown in the second embodiment of Taina-the substrate display of the embodiment ... In this embodiment, the substrate developing device includes a main liquid storage tank 1, a substrate processing section 2, and a control machine. &Quot; ~ The shadow liquid is stored in the f% calibration mechanism 3 and the reproduction system 4. The device of the display liquid of the display screen is stored in the toilet (hydrogen and oxygen etching film. The substrate processing unit 2 is a device for developing the photoresist film e-board. It is processed A handle injury * = ρ, night And the to-be-processed base tank 1, the A board, the second controller, and the control mechanism 3 are the devices that control the developer storage brain and the storage system, and the regeneration system 4 are equipped with microelectronics " (Photoresist f) The device in the toilet liquid storage tank 1. ^.. Then return to the developing developer storage tank 1 through the pipe 6 and connect to the pipe 6 with a pump 5 and a filter 1 midway. . When driving ^:? 2 is equipped with the filter 10, the developer storage tank "moving the pump 5%" will pass through the piping 6 2 2. In addition, • shadow liquid storage tank! Shell: through, ...: To the substrate processing section 2. In the substrate processing section 2, the officer 9 is connected to the substrate processing pipe 9 and returned to the developer storage tank.

卜,在顯影液儲存槽J 9H〇3l29.ptd 第12頁 530337 五、發明說明(10) 中,^排放配管12連接於再生系統4。在排放配管 达设有排液閥11。排液閥n係供調節經由 =卜的顯影液流量用之闊。另,在顯影液儲存;;2上而排 步而’、接著液面調整用配管丨5。此液面調整用配 排液閥11而連接於下游端的排放配管1 2。 1 透過 基板處理部2係具備有屬於基板保持 帶U、填液喷嘴8、及液體供應:管广。=、, 帶係=著被處理基板,並從紙面左側朝右側 成長狀°液體供應配管7乃供將填液噴嘴8# 應:顯衫液用的機構。被處理基板係利用滾動 依直父於靜止填液喷嘴8的 別▼而 嘴8所供應的顯影液 =㈣私動’從填液喷 攸别頭依序填液於後端。 扰2機構3連接於泵5與排液閥丨〗與栗13( 有纪憶體。該記憶體乃儲在 _ 述),並具 與泵13等用的微電腦盘=;不供:5與控制排液闊η 再生系統4經由排放序從= 使用過的顯影液,並調節著❻二液儲存槽1中導入已 然後經由配管1 4盥粟1 C| ..'又疲勞度(光阻濃度), 儲存槽”。藉由控’制機構的顯:液重返 再生系統4流入於顯影液儲存;泵而調節顯影液從 〔填液喷嘴之構造〕 仔h1中。 圖2係從本實施形熊 + ^ w文贺嘴8之第二方向所觀看到的 91103129.ptd 第13頁 ΨΚ 530337Bu, in the developer storage tank J 9H03l29.ptd page 12 530337 V. Description of the invention (10), the discharge pipe 12 is connected to the regeneration system 4. A drain valve 11 is provided at the discharge pipe. The drain valve n is widely used for adjusting the flow rate of the developer solution. In addition, the developer solution is stored in steps 2; ', and then the liquid level adjustment pipe 5 is used. This liquid level adjustment piping discharge valve 11 is connected to the discharge pipe 12 at the downstream end. 1 Transmission The substrate processing unit 2 is provided with a substrate holding belt U, a liquid filling nozzle 8, and a liquid supply: tube wide. = ,, Belt system = The substrate to be processed is growing from the left side to the right side of the paper. The liquid supply pipe 7 is a mechanism for filling the liquid nozzle 8 #. The substrate to be processed is sequentially filled with the developing solution supplied by the nozzle 8 and the developing solution supplied by the nozzle 8 = "private movement", and the liquid is sequentially filled from the filling nozzle to the rear end. The disturbance 2 mechanism 3 is connected to the pump 5 and the drain valve 丨〗 and Li 13 (Yuki memory. This memory is stored in the _ described), and has a microcomputer disk for the pump 13 and other = = not available: 5 and The draining system η is controlled by the regeneration sequence 4 from the used developer solution, and the second liquid storage tank 1 is adjusted and then introduced through the piping 1 4 Concentration), storage tank ". By controlling the display of the control mechanism: the liquid returns to the regeneration system 4 and flows into the developer storage; the pump adjusts the developer from [the structure of the filling nozzle] into the h1. Figure 2 is from this Implementation of the shape bear + ^ wwenhezui 8 viewed from the second direction 91103129.ptd page 13 ΨΚ 530337

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五、發明說明(12) 此填液喷嘴8在使用狀態中配置如圖4所示。換句話說, 傾斜流路28朝下傾斜且吐出口24朝向基板的前進方向端,’ 聯絡面30則位於較吐出口 24更下端且朝向下方,填液=31 則朝向下方並與基板面略呈平行的水平姿態。 〔動作〕 當填液於基板上時,首先施行如下述的預供料。利用來 自控制機構3的指令,驅動泵5、泵13,而開啟排液閥u。 藉此經由配管6與過濾器10,從顯影液儲存槽1將顯影液供 應給基板處理部2,而顯影液則從液體供應配管7供應給填 液喷嘴8,並經由吐出口 24吐出於基板處理部2内部。經吐 出的顯影液,經由配管9返回顯影液儲存槽丨内。此外,顯 影液儲存槽1的顯影液,則經由排液閥丨丨與排放配管丨2, 供應給再生系統4,在利用再生系統4調整鹼度、疲勞度 (光阻濃度)之後,經由泵13與配管14,返回顯影液儲^槽 1中+。依此便可將侵入於配管6, 9,丨4及液體供應配管7與填 液嘴1^ 8内的空氣予以排除。 、 當預供料完成之後,便將.從填液喷嘴8中吐出的流量變 小’利用滾動輸送帶1 6使基板朝第二方向移動。利用吐出 口 24所吐出的顯影液,藉由表面張力更傳遞於聯絡面3〇 上更由聯絡面3 0傳遞於填液面3 1上,而滞留於此。當基 板經搬送並到達填液喷嘴8下方時,滯留於此填液面3丨上 的顯影液將面狀接觸基板,並從基板前頭部依 液於後 端部。 、 其中,填液面31與接合面25, 26所成的角度0 ,如圖2所V. Description of the invention (12) The configuration of the liquid-filled nozzle 8 in the use state is shown in FIG. 4. In other words, the inclined flow path 28 is inclined downward and the discharge port 24 faces the end of the substrate in the forward direction, and the 'contact surface 30 is located lower and lower than the discharge port 24, and the filling liquid = 31 is directed downward and slightly from the substrate surface. Take a parallel horizontal attitude. [Operation] When the liquid is filled on the substrate, the following pre-feeding is performed first. By the instruction from the control mechanism 3, the pump 5 and the pump 13 are driven, and the drain valve u is opened. Thereby, the developer is supplied from the developer storage tank 1 to the substrate processing section 2 through the piping 6 and the filter 10, and the developer is supplied from the liquid supply pipe 7 to the filling nozzle 8 and is ejected out of the substrate through the ejection outlet 24. Inside the processing unit 2. The discharged developer is returned to the developer storage tank 丨 through the pipe 9. In addition, the developer in the developer storage tank 1 is supplied to the regeneration system 4 through the drain valve 丨 丨 and the discharge pipe 丨 2. After the alkalinity and fatigue (photoresist concentration) are adjusted by the regeneration system 4, the pump is pumped. 13 and piping 14 return to the developer storage tank 1+. In this way, the air that has penetrated into the pipes 6, 9, 4 and the liquid supply pipe 7 and the filling nozzle 1 ^ 8 can be eliminated. When the pre-feeding is completed, the flow rate discharged from the filling nozzle 8 will be reduced 'using a rolling conveyor 16 to move the substrate in the second direction. The developing solution discharged from the discharge port 24 is transmitted to the contact surface 30 by the surface tension, and is further transmitted to the filling surface 31 by the contact surface 30, and is retained therein. When the substrate is transported and reaches below the filling nozzle 8, the developer remaining on the filling surface 3 丨 will contact the substrate in a plane shape, and will be liquid from the front head of the substrate to the rear end. Among them, the angle 0 formed by the filling surface 31 and the joining surfaces 25 and 26 is shown in FIG. 2

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示般,最好在1 〇。 的活,從吐出口 2 4 上,而掉落於基板 顯影液將不被致傳 外’聯絡面3 0的聯 ,液面31的第二方 若聯絡面30的聯絡 上的重力將大於表 30上便將掉落於基 的話,顯影液雖被 面3 1上,而掉落於 於此範圍的話,顯 於基板;反之,若 液便均句的擴展於 此外,基板的移 板上時,在基板前 以’在基板中央部 板後端部則將基板 動的話,在較難填 制基板的移動速度 中,亦可正確的填 以上且50。以下。若角度$大於此範圍 所吐出的顯影液將不被傳遞於聯絡面3 〇 上;反之,若角度0小於此範圍的話, 遞於填液面3 1上,而掉落於基板上。此 絡長度b最好在〇· lmm以上且3mm以下。 白長度a最好在10mm以上且4〇mni以下。 長度b大於此範圍的話,施加於顯影液 面張力,使顯影液尚未被傳遞於聯絡面 板上,反之’若聯絡長度b小於此範圍 傳遞於聯絡面3 0上,但卻未滯留於填液 基板上。此外,若填液面3 1的長度a小 影液將不致滯留於填液面3 1上,便掉落 填液面3 1長度a大於此範圍的話,顯影 整體填液面3 1。 ’ 動速度,如圖5所示般,開始填液於爲 頭部將先較緩慢,然後再逐漸加速。 ’使基板依一定速度進行移動,而在& 的移動予以減速。依此控制著基板的^ 液的基板前頭部與後端部附近,便可寺$ ,而使即便在基板的前頭部與後端部 液0 依照本實施形態的基板顯影裝置的話,因為面狀接觸到 顯影液而填液於基板上,因此即便高速移動基板的情% 下’在基板的前頭部與後端部中,便可確實的填液。锋As shown, the best is 10. From the outlet 2 4 while falling on the substrate developer solution will not be transmitted to the 'contact surface 30'. If the second side of the liquid surface 31 has a greater gravity on the contact surface 30 than the table If it is dropped on the substrate at 30, although the developer solution is on the surface 31, and if it falls within this range, it will be displayed on the substrate; on the contrary, if the liquid is evenly extended in addition, when the substrate is moved on the board, If the substrate is moved in front of the substrate with 'in the center of the substrate and the rear end of the plate, if the substrate is moved at a harder speed, it can be filled with more than 50. the following. If the angle $ is larger than this range, the discharged developer will not be transferred to the contact surface 30. On the other hand, if the angle 0 is smaller than this range, it will be transferred to the filling surface 31 and dropped on the substrate. The network length b is preferably from 0.1 mm to 3 mm. The white length a is preferably 10 mm or more and 40 mm or less. If the length b is greater than this range, the developer is applied to the developer surface tension, so that the developer has not yet been transmitted to the contact panel, otherwise 'if the contact length b is less than this range and transmitted to the contact surface 30, but does not stay on the filling substrate on. In addition, if the length a of the liquid-filling surface 31 is small, the film will not stay on the liquid-filling surface 31 and will fall. If the length a of the liquid-filling surface 31 is larger than this range, the entire liquid-filling surface 31 will be developed. The moving speed, as shown in Fig. 5, begins to fill with liquid. The head will be slower first, and then gradually accelerated. ’The substrate is moved at a certain speed, and the movement at & is decelerated. In this way, the vicinity of the front part and the rear part of the substrate that controls the liquid of the substrate can be used. Even if the front part and the rear part of the substrate are liquid, according to the substrate developing device of this embodiment, because The substrate comes into contact with the developer and is filled with liquid on the substrate. Therefore, even when the substrate is moved at a high speed, the liquid can be reliably filled in the front and rear portions of the substrate. Front

530337 五、發明說明(14) —---- 果’便可高速的對基板施行填液處理。 又’由於利用再生系統4調整已使用過的顯影液而再度 使^,其預供料可以在大流量下進行。藉此,配管上可以 充分排除其入侵氣泡,亦可以防止基板的顯影斑點。 〔第二實施形態〕 +圖^6係相關本發明第二實施形態的基板顯影裝置之填液 喷S 8配置圖。弟二實施形態的基板顯影震置,乃如同圖1 至圖3所示第一實施形態的基板顯影裝置構造約略相同, 省略相同構造的說明。在第一實施形態中,基板處理部2 雖具備有一個填液喷嘴8,但在第二實施形態中,基板處 理部2則具有填液喷嘴8, 41,42等三個填液嘴嘴。基板前進 方向最上游端之填液喷嘴8,與基板間的距離X最小,下游 端之填液喷嘴41,42與基板間的距離y,z則依序變大。此 外,填液噴嘴41,42係配置呈填液面31略平行於基板,最 下游端的填液噴嘴42則配置呈吐出口 24垂直於基^板的方 式0 在第二實施形態的基板顯影裝置中,被移送的基板,首 先利用填液噴嘴8而面狀的填液上處理液,在經填液530337 V. Description of the invention (14) —---- If the result is high, the substrate can be filled with liquid at high speed. Since the used developer is adjusted again by the regeneration system 4, the pre-feeding can be performed at a large flow rate. Thereby, the invasion bubbles can be sufficiently excluded from the piping, and development spots on the substrate can be prevented. [Second Embodiment] + Fig. 6 is a layout diagram of a liquid-filled spray S 8 of a substrate developing device according to a second embodiment of the present invention. The structure of the substrate developing device of the second embodiment is approximately the same as that of the substrate developing device of the first embodiment shown in FIG. 1 to FIG. 3, and description of the same structure is omitted. In the first embodiment, although the substrate processing unit 2 is provided with one liquid filling nozzle 8, in the second embodiment, the substrate processing unit 2 is provided with three liquid filling nozzles including liquid filling nozzles 8, 41, 42 and the like. The distance X between the liquid filling nozzle 8 at the most upstream end of the substrate in the forward direction of the substrate and the substrate is the smallest, and the distances y, z between the liquid filling nozzles 41, 42 at the downstream end and the substrate are sequentially larger. In addition, the liquid-filling nozzles 41 and 42 are arranged so that the liquid-filling surface 31 is slightly parallel to the substrate, and the liquid-filling nozzle 42 at the most downstream end is arranged so that the discharge port 24 is perpendicular to the substrate. 0 The substrate developing device in the second embodiment In the transfer substrate, the processing liquid is firstly applied to the planar filling liquid using the filling nozzle 8 and

部分,便再由填液噴嘴41面狀的填液上處理液,缺 用填液噴嘴42進行填液。 …、强:丹矛J 依照第二實施形態的基板顯影裝置,由於利 喷嘴8、41、42重複填液於基板上,即便基板二個填液 快速的情況下,亦可確實的對基板的前頭部盥迷*度較 填液處理。藉此便可高速的施行基板的填液處鳊°卩施行 心王。此外,In some cases, the processing liquid is applied to the surface filling liquid from the filling nozzle 41, and the liquid filling nozzle 42 is used to fill the liquid. …, Strong: Dan spear J According to the substrate developing device of the second embodiment, since the nozzles 8, 41, and 42 are repeatedly filled with liquid on the substrate, even if the two liquid fillings on the substrate are fast, the substrate can be reliably filled. Forehead toiletry * degree is better than filling treatment. In this way, the filling position of the substrate can be executed at a high speed and the heart king can be executed. In addition,

530337 五、發明說明05) ^----— __ 利用最後的填液喷嘴42垂直 制經填液喷嘴8,41而填液的裔f液於基板上,藉此便可抑 (換言之,填液喷嘴8, 41的顯、、1影液,在基板前頭方向上 嘴8, 4 1的顯影液流出方向)二影液流路方向,即從填液喷 第二實施形態中雖例示三他產生流動。 並不僅限於此,即便填液嘖填液喷嘴的例子,惟本發明 達上述相同的功效。當填液噴$::以上的情況時,亦可 因為利用更多的填液喷嘴重、j °又置四個以上的情況時, 速移動基板的施行填液處理复填液於基板上,因此可更高 〔第三實施形態〕 在上 情況, 況。此 與基板 間的距 液面31 在本 利用填 分,便 態的基 直填液 填液喷 移動速 液’且 述第二實施形態中- 但亦有如,所示,採用例V真液噴嘴為三個以上的 产济下,脾其A、用一個填液噴嘴8, 41的情 月/ 、土板月丨J進方向最上游端之填液噴嘴8, 間的距離X予以變小,π #山 而心具狀1 % 8 離y則予以變大。此外,填予:::液喷嘴41與基板 略平行於基板的狀態。冑液物,41則配置呈填 實施形態的基板顯影裝置中, 液喷嘴8而面狀的填液上虛踩、、广+ 貫先 再由填液噴嘴41面狀的填液上V ,填液過一的部 兴饮上處理液。在本實施形 板顯影裝置中,如第二實施形態般,雖垂 的填液喷嘴42,但在本實施形態中,因為利用二個 嘴8,41重複的填液於·基板上,因此即便加速基板的 度丄亦可確實的對基板的前頭部與後端部進行填 可南速的執行基板的填液處理。530337 V. Description of the invention 05) ^ ----— __ The last filling nozzle 42 is used to make the filling nozzle 8 and 41 vertically through the filling nozzle 8 and 41 on the substrate, so that it can be suppressed (in other words, filling The development of the liquid nozzles 8, 41, and 1 shadow liquid, the developing solution outflow direction of the nozzles 8, 4 1 in the front direction of the substrate) the direction of the second shadow liquid flow path, that is, the third embodiment from the filling liquid spraying example Generate flow. The present invention is not limited to this. Even in the case of the liquid filling / filling nozzle, the present invention achieves the same effects as described above. When the filling liquid is sprayed above $ ::, it can also be caused by using more filling nozzles, and when j or more than four are placed, the filling liquid is processed on the substrate, and the filling liquid is placed on the substrate. Therefore, it can be made higher [Third Embodiment] The above situation. The distance from the liquid surface 31 to the substrate is based on the fact that the base is directly filled with liquid and the liquid is sprayed to move the fast liquid in the convenient state, and it is described in the second embodiment. However, as shown, a true liquid nozzle of Example V is used. For three or more industries, the spleen A, the love month with a filling nozzle 8, 41 /, the soil plate month 丨 J, the most upstream filling nozzle 8 in the direction of travel, the distance X between them becomes smaller, π # 山 和 心 形状 1% 8 away from y is enlarged. In addition, a state where the liquid nozzle 41 and the substrate are slightly parallel to the substrate is filled. For liquid matter, 41 is arranged in the substrate developing device filled with the embodiment. The liquid nozzle 8 is pressed on the planar filling liquid, and the surface is filled with V. Then, the liquid filling nozzle 41 is filled with V and filled with liquid. After the solution was over, drink the treatment solution. In the plate developing device of this embodiment, although the liquid filling nozzle 42 is vertical like the second embodiment, in this embodiment, since two nozzles 8, 41 are repeatedly filled with liquid on the substrate, Accelerating the degree of the substrate can also reliably fill the front and rear ends of the substrate with a liquid filling process that can execute the substrate at a high speed.

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〔第四實施形態〕 在上述第三實施形態的二個填液喷嘴之中,將下游端的 填液喷嘴41姿態’如圖8所示變化的話,便成為第四實施 形態。其t,填液噴嘴41乃依照填液喷嘴41的液體吐出口 24垂直向下,且傾斜流路28對水平姿態的基板呈垂直,而 連接吐出口24的下面32則平行於基板面的方式進行配置。 將基板前進方向最上游端之填液噴嘴8,與基板間的距離X 予以變小,下游端之填液噴嘴41與基板間的距離y變為大 於X。填液噴嘴8的填液面31略平行於基板。 依照第四實施形態的話,如同第三實施形態,可高速的 施行基板的填液處理。再者,在本實施形態中,將下游端 的填液噴嘴41流路28設定為垂直向下,利用對基板垂直供 應液體,相較於將流路28斜向於基板前進方向的情況下;、 可獲得下述優點。 第一,抑制經填液於基板上的顯影液產生流動,並可抑 制顯巧液流動而產生處理斑·點的現象。另,在下游端的填 液喷嘴4 1,因為不需要使液體流入於面3 1 X中,因此聯絡 面30x長度c雖不需要限定於第一實施形態所述範圍内,、但 在為使液體均勻的朝向下方吐出,因此在相較於上游端的 填液噴嘴8之b下,c長度取較短的形狀,譬如c可在lmm程 度以下,最好低於〇. lmm。 第二,包夾吐出口24且連接於聯絡面3〇x的下面32,在 接觸到填液於基板上之經供應過的顯影液,而可降低液面 產生波浪,達更減少處理斑點產生的功效。[Fourth embodiment] Among the two liquid filling nozzles of the third embodiment described above, the posture of the liquid filling nozzle 41 at the downstream end is changed as shown in Fig. 8 to form the fourth embodiment. T, the filling nozzle 41 is vertically downward according to the liquid discharge port 24 of the filling nozzle 41, and the inclined flow path 28 is perpendicular to the substrate in a horizontal posture, and the lower surface 32 connected to the discharge port 24 is parallel to the substrate surface. Configure it. The distance X between the liquid-filling nozzle 8 at the most upstream end of the substrate in the forward direction of the substrate and the substrate is reduced, and the distance y between the liquid-filling nozzle 41 at the downstream end and the substrate is greater than X. The filling surface 31 of the filling nozzle 8 is slightly parallel to the substrate. According to the fourth embodiment, as in the third embodiment, the substrate can be filled with liquid at a high speed. Furthermore, in this embodiment, the flow path 28 of the liquid-filling nozzle 41 at the downstream end is set vertically downward, and the liquid is vertically supplied to the substrate, compared with the case where the flow path 28 is inclined obliquely to the substrate advance direction; The following advantages can be obtained. First, it suppresses the flow of the developer solution filled on the substrate, and suppresses the phenomenon of processing spots and dots caused by the flow of the developer solution. In addition, since the liquid-filling nozzle 41 at the downstream end does not need to allow liquid to flow into the surface 3 1 X, the length c of the contact surface 30x need not be limited to the range described in the first embodiment. Lmm。 Spit uniformly downward, so compared to the upstream end of the filling nozzle 8 b, c length takes a shorter shape, for example, c can be less than about 1mm, preferably less than 0. lmm. Second, the ejection outlet 24 is sandwiched and connected to the lower surface 32 of the contact surface 30x. When it contacts the supplied developer solution filled on the substrate, the liquid surface can be reduced to reduce the generation of processing spots. Effect.

530337530337

第三,當在下游端的填液喷嘴4i中,使流路28朝向於基 板前進方向之斜方向的話,對基板的後端部所供應的液 體,將在基板前進方向上產生流動力,而在此方向上流動 液體,而產生在基板後端部產生未存在液體的狀態,基板 後端部未被顯影處理,且有可能產生處理斑點,但是,利 用將流路28垂直向下,便不致產生此種液體流動,而可抑 制處理斑點的產生。 〔填液噴嘴之材料〕Thirdly, if the flow path 28 is oriented in the oblique direction of the substrate advance direction in the liquid-filling nozzle 4i at the downstream end, the liquid supplied to the rear end portion of the substrate will generate a flow force in the substrate advance direction, and Liquid flows in this direction, resulting in a state where no liquid exists at the rear end portion of the substrate. The rear end portion of the substrate is not developed and processing spots may occur. However, by using the flow path 28 vertically downward, it does not occur. This kind of liquid can suppress the generation of processing spots. [Material of filling nozzle]

上述各實施形態的填液喷嘴8予第二、第三實施形態的 填液喷嘴41中’聯絡面30與.填液面31最好顯影液與該等聯 ^面30及填液面31混在—起,並繞人朝下下方的填液面31 。因此,在上述各實施形態中,喷嘴本體2丨,22最好採 =對聯絡面30與填液面31可獲得充分高之親水性的材料, 言如金屬材料,具體而言為不鏽鋼材料所構成,並使該等 ^㈣與填液面31露出於金屬表面上。藉此藉由對顯影 :文的聯絡面30與填液面31的繞入,便可確保更安定,且可 更南速且安定的施行基板的填液處理。 未限於上述構造’亦可至少將形成聯絡面與填 =:喷嘴t體22,利用不鏽鋼等金屬材料構成。此外 技利用樹月日形成噴嘴本體21,22,其中僅對聯絡面㈣ 、^面31施打表面加卫’而獲得足夠高的親水性之構造 Λ ,例子,可考慮如金屬鍍、或金屬薄板貼附等 態的填液噴ίί第二實施形態的填液喷嘴42與第四實施 、、 ,雖在使填液於基板上的液體,接觸於The liquid-filling nozzle 8 of each of the above-mentioned embodiments is configured such that the communication surface 30 and the liquid-filling surface 31 of the liquid-filling nozzle 41 of the second and third embodiments are preferably mixed with the joint surface 30 and the liquid-filling surface 31. —Lift up and down around the filling surface 31. Therefore, in the above-mentioned embodiments, the nozzle bodies 2 and 22 are preferably made of a material which can obtain a sufficiently high hydrophilicity for the contact surface 30 and the liquid filling surface 31, such as a metal material, specifically a stainless steel material. It is structured such that the substrate and the liquid filling surface 31 are exposed on the metal surface. Thereby, by encircling the contact surface 30 and the liquid filling surface 31 of the developing surface, it is possible to ensure more stable, and to perform the liquid filling treatment of the substrate at a higher speed and stability. It is not limited to the above-mentioned structure ', and at least the contact surface and the filling body: the nozzle t body 22 may be formed using a metal material such as stainless steel. In addition, the nozzle body 21, 22 is formed by using the moon and the sun, and only the contact surface ㈣, ^ surface 31 is subjected to surface protection 'to obtain a sufficiently high hydrophilic structure Λ. For example, metal plating, or metal can be considered. The liquid filling nozzle 42 of the second embodiment is attached to the liquid filling nozzle 42 of the second embodiment and the fourth embodiment, and the liquid filling nozzle 42 is in contact with the liquid filled on the substrate.

530337 五、發明說明(18) 等噴填液喷 的影響將較 如若將上述 成,且將聯 24所吐出的 流。 〔其他實施 在上述實 明,但亦可 基板、半導 即,即便在 對被處理基 再者,即 板、半導體 本發明。 【發明之效 依照本發 液,因為將 板高速移動 施行填液。 再者,依 為將基板的 前頭部與後 再生的處理 嘴下Γ=: ’該等材料與表面狀態對特性 ' 一 =$角卜方未存在基板的狀態下,Μ 第四貫&形態的填液噴嘴41,以疏 = 絡面30χ與下面32形成疏水性的話,從吐出: 液體,在朝向下方的流動μ±攸土出口 曰〕机動上將不較易產生亂 形態〕 施形態中,雖舉例基板顯影裝置的 使用於液晶顯示裝置用基板、電漿丁呪 體;圓等賴餘刻裝置、光阻剝離=板用 濕式蝕刻I置、光阻剝離裝置中,亦; 板施行蝕刻液、剝離液的填液。 貝的 便在液晶顯示裝置用基板、' 晶圓等的水洗裝置、或洗淨^用基 衣1 亦均可適用 果】 明的話,滞留於填液喷嘴之填液 妾觸被處理基板而填液,因此即;; 的“,亦可確實的對基板之前頭部與後端; iiim,在基板的前頭部與後端部,因 端部亦可確實的填液… 液’再度從填液喷嘴中吐出,因為單次使用過530337 V. Description of the invention (18) The effects of spraying of filling fluids such as those mentioned above will be the same as the above, and the flow discharged from the 24 will be combined. [Other implementations are described in the above description, but the present invention can also be applied to a substrate, a semiconductor, that is, a substrate, a semiconductor, or the like. [Effects of the invention According to this liquid, the plate is moved at high speed to perform filling. In addition, according to the front head of the substrate and the post-regeneration processing nozzle, Γ =: 'the properties of these materials and the surface state'-= $ 角 卜 方 In the state where there is no substrate, the fourth fourth & The liquid-filling nozzle 41 in the form is formed to be hydrophobic with the surface 30χ and the lower surface 32, and then is ejected from the liquid: the liquid flows downward downwards μ ± the soil outlet.] It will not be easy to produce a disordered shape on the mobile] In the example, although the substrate developing device is used in a substrate for a liquid crystal display device, a plasma sintered body; a circle, etc., depends on an engraving device, a photoresist peeling = a wet etching for a plate, and a photoresist peeling device; The filling liquid of an etching liquid and a peeling liquid is performed. It is also applicable to substrates for liquid crystal display devices, water washing devices such as wafers, or basecoats 1 for cleaning ^ If the results are clear, the liquid remaining in the liquid filling nozzles will contact the substrate to be processed and fill. , Matter, "", can also be sure of the front and back of the substrate; iiim, the front of the substrate and the back of the substrate, because the end can also be reliably filled with liquid ... Spit out of the liquid nozzle because it has been used a single time

C:\2D.00DE\9l.05\91103129.ptd 第21頁 530337 五、發明說明(19) 的處理液不致被丟棄而可再利用,可以減低排液的量。又 再利用已使用過的處理液,因此便可使用大量的處理液施 行充分的預供料。 再者,依照本發明其他例 重複填液,因此可更確實的 液,並可更高速的移動基板 頭的填液喷嘴所吐出的處理 此便可防止利用基板後端填 液噴嘴内的處理液流動方向 【元件編號之說明】 子,因為利用複數的填液噴嘴 施行基板前頭部與後端部的填 施行填液。此外,從基板最前 液’因為將垂直吐向基板,因 液喷嘴所填液的處理液,在填 上產生液體流動。 顯影液儲存槽 基板處理部 控制機構 再生糸統 5 泵 b、9 配管 1 液體供應配管 8、4 1、4 2 填液喷嘴 I 〇 過濾器 II 排液閥 1 2 排放配管 13 泵 14 配管 1 5 液面調整用配管C: \ 2D.00DE \ 9l.05 \ 91103129.ptd Page 21 530337 V. Description of the invention (19) The treatment liquid can not be discarded and can be reused, which can reduce the amount of liquid discharged. In addition, the used processing liquid is reused, so that a large amount of processing liquid can be used for sufficient pre-feeding. In addition, according to other examples of the present invention, the liquid filling is repeated, so that the liquid can be more reliable, and the processing discharged from the liquid filling nozzle of the substrate head can be moved at a higher speed. This can prevent the use of the processing liquid in the liquid filling nozzle at the rear end of the substrate. Flow direction [Explanation of element number], because a plurality of filling nozzles are used to fill the front and rear portions of the substrate. In addition, since the liquid from the front of the substrate is vertically ejected toward the substrate, the processing liquid filled with the liquid nozzle generates a liquid flow on the filling. Developer storage tank substrate processing unit control mechanism regeneration system 5 pumps b, 9 piping 1 liquid supply piping 8, 4 1, 4 2 filling nozzle I 〇 filter II discharge valve 1 2 discharge piping 13 pump 14 piping 1 5 Liquid level adjustment piping

530337 五、 發明說明(20) 16 滾 動 送帶 21 〜22 喷 嘴 本 體 23 隔 板 24 吐 出 D 25 ^ 26 接 合 面 27 凹 部 28 傾 斜 流 路 29 開 π 30 聯 絡 面 31 填 液 面 32 下 面530337 V. Description of the invention (20) 16 Roller feeding 21 ~ 22 Nozzle body 23 Shelf 24 Spit out D 25 ^ 26 Joint surface 27 Recess 28 Inclined inclined flow path 29 Open π 30 Interlocking surface 31 Filling surface 32 Lower surface

C:\2D-mDE\91-05\91103129.ptd 第23頁 530337 圖式簡單說明 圖1為第一實施形態的基板顯影裝置。 圖2為填液喷嘴的放大圖。 圖3為填液噴嘴的分解圖。 圖4為說明填液喷嘴的填液之說明圖。 圖5為基板移動速度。 圖6為第二實施形態的填液喷嘴。 圖7為第三實施形態的填液喷嘴。 圖8為第四實施形態的填液喷嘴。C: \ 2D-mDE \ 91-05 \ 91103129.ptd Page 23 530337 Brief Description of Drawings Figure 1 is a substrate developing device according to the first embodiment. Fig. 2 is an enlarged view of a filling nozzle. FIG. 3 is an exploded view of the filling nozzle. FIG. 4 is an explanatory diagram for explaining the filling of a filling nozzle. Figure 5 shows the substrate moving speed. Fig. 6 is a liquid filling nozzle according to a second embodiment. Fig. 7 is a liquid filling nozzle according to a third embodiment. Fig. 8 is a liquid filling nozzle according to a fourth embodiment.

C:\2D-roDE\91-05\91103129.ptd 第24頁C: \ 2D-roDE \ 91-05 \ 91103129.ptd Page 24

Claims (1)

530337 六、申請專利範圍 1 · 一種基板處理裝置,係供將處理液填液於基板上的其 板處理裝置,乃具備有: & 保持基板的基板保持機構·; 具有沿第一方向的細縫狀吐出口,並將處理液填液於保 持在上述基板保持機構上的基板表面上用的填液喷嘴;以 外將基板相對於上述填液喷嘴,朝交又於上述第一方向的 弟一方向移動的移動機構; 表=2=嘴係在保持於上述基板保持機構上的基板 處’並具有供將從上述吐出口所吐出的處理 /夜予以滯留,且在上述其士 ^ η , ^ ^ ^ ^基板上形成面狀填液的填液面。 2·如申凊專利範圍第丨項之 裝 填液喷嘴的吐出口,係飛# ^ l广士忒置其中,上述 下游端之端部處。成於上述填液面的基板移動方向 ’其中,上述 導引於上述吐 3·如申請專利範圍第2項之美 填液喷嘴係具有將從外# 土板地里裝置 φ η由从π力丨 外部所供應的處理液, 出口中的傾斜通路。 &夂狀 4 ·如申請專利範圚笛 述 填液喷嘴係在上述吐出項之基板處理裝置,其中,」 吐出口所吐出的處理液口與填液面之間,具有供將從上述 5·如申請專利範圍^ ’導引於上述填液面上的聯絡面。 填液喷嘴的填液面係形項之基板處理裝置,其中,上述 基板表面。 、成平行於保持在基板保持機構上的 6 ·如申請專利範圍第 項之基板處理裝置,其中,上述 C:\2D-roDE\91-05\91103l29.ptd 第25頁 、申請專利範圍 填液嘴嘴的士 下。 、真/夜面第二方向寬度,係在1 Omm以上且4Omm以 7 ·如申請專# 填液噴嘴的傾料範圍第3項之基板處理裝置,其中,上述 的角度。 、’通路係相對填液面在1 0。以上且5 0。以下 填液噴嘴二勝!!範圍第4項之基板處理裝置,其中,上述 9·如申浐:、、,° f聯絡長度,係在0.1聽以上且3mm以下。 其中,上^利範圍第1至8項中任一項之基板處理裴置, 處理對象2篡f噴嘴的吐出口之上述第一方向長度,係較 !〇.如申二:直4在相同方向上的長度更長。 置,其中,'專利範圍第1至8項中任一項之基板處理裝 上述抑41係更具備有控制著上述移動機構的控制機構; 板的移^機構係在上述基板的前頭附近處,加速上述基 定為一定、i =在上述基板的中央處則將上述基板的移動設 予以減逮逯度,在上述基板的後端處則將上述基板的移動 置U ·复如申請專利範圍第1至4項中任一項之基板處理裝 ’,、中,係更具備有將供應給上述基板的液體予以\ 的再生機構; 丹生 利用上述再生機構所再生的處理液,將再度從上述 喷嘴中吐出。 具/夜 1 2 · —種基板處理裝置,係供將處理液填液於基板上的 基板處理裝置,乃具備有: 、 供保持基板用的基板保持機構;530337 6. Scope of patent application1. A substrate processing device is a plate processing device for filling a processing liquid on a substrate, and includes: & a substrate holding mechanism for holding a substrate; A liquid-filling nozzle for filling the processing liquid on the substrate surface held on the substrate holding mechanism by a slit-shaped discharge port; otherwise, the substrate is opposed to the liquid-filling nozzle toward the first direction of the first direction. Movement mechanism moving in the direction; Table = 2 = The mouth is attached to the substrate held on the substrate holding mechanism 'and has a treatment / night to be discharged from the above-mentioned discharge port, and is held in the above-mentioned person ^ η, ^ ^ ^ ^ A liquid filling surface is formed on the substrate. 2. The discharge outlet of the filling liquid nozzle as described in the item 丨 of the patent application, which is located at the end of the downstream end mentioned above. The direction of movement of the substrate formed on the liquid-filled surface 'wherein, the above-mentioned guide is guided by the above-mentioned spit 3. The liquid-filled nozzle of the United States, such as the second item in the scope of the patent application, has a device φ η from the outside Externally supplied process liquid, inclined channel in the outlet. & 夂 状 4 · If the patent application fan said the liquid filling nozzle is on the substrate processing device of the above-mentioned discharge item, in which, between the processing liquid port and the filling surface discharged from the discharge port, there is a supply and discharge liquid from the above 5 · If the scope of patent application is ^ 'Guide to the contact surface on the above filling surface. The substrate processing apparatus of the liquid-filling nozzle of the liquid-filling surface is a form item, wherein the surface of the substrate. , 成 Parallel to the substrate holding mechanism 6 · If the substrate processing device under the scope of the patent application, the above C: \ 2D-roDE \ 91-05 \ 91103l29.ptd page 25, patent application filling liquid Mouth taxi. The width of the true / night plane in the second direction is more than 10 mm and less than 40 mm. 7) For example, the substrate processing device of the third item of the dumping range of the liquid filling nozzle is applied, wherein the above-mentioned angle. The channel is at 10 relative to the filling level. Above and 50. The following is a liquid filling nozzle with two wins !! The substrate processing device of the fourth item in the range, wherein the contact length of the above 9 · Russian: ,,, and ° f is 0.1 or more and 3 mm or less. Among them, the substrate processing device of any one of items 1 to 8 in the above range, and the above-mentioned first direction length of the ejection outlet of the nozzle 2 of the processing object 2 is more than the same. The length in the direction is longer. Wherein, the substrate processing device of any of the items 1 to 8 of the patent scope is further provided with a control mechanism that controls the moving mechanism; the plate moving mechanism is near the front of the substrate, Accelerate the above-mentioned basis to be constant, i = set the movement of the substrate at the center of the substrate to reduce the degree of arrest, and set the movement of the substrate to U at the rear end of the substrate. The substrate processing equipment according to any one of items 1 to 4 is further equipped with a regeneration mechanism for applying liquid supplied to the substrate; Danson will use the processing liquid regenerated by the regeneration mechanism to remove the liquid from the nozzle again. Spit out. / 2 1 — A substrate processing apparatus is a substrate processing apparatus for filling a processing liquid on a substrate, and includes: a substrate holding mechanism for holding a substrate; 530337 六、申請專利範圍 具有沿第一方向的細縫狀吐出口,並將處理 述基板伴輯換错% π n I〉夜於上 板保持棧構所保持的基板表面上之第一填液喑略. 在交叉於上述第一方向的第二方向上,盥第—埴’+ 1列’且ί有延伸於上述第-方向的細縫狀吐出口 :: =上述弟一填液噴嘴而填液處理液的基板表面上 行填液處理液的第二填液喷嘴;以及 再 使上述基板相對於第一與第二填液噴嘴,朝相一 方向移動的移動機構。 ;第^ 13·如申請專利範圍第12項之基板處理裝置,复 述第-與第:填液喷嘴,係依第:填液喷嘴的吐出上 持於上述基板保持機構上的基板表面之間的間隔,7y 第-填液喷嘴的吐出口與上述基板表面間的 匕 方式而配置著。 尺見贗的 1 4.如申請專利範圍第丨2項之基板處理裝置,其 述第一填液喷嘴係申請專利範圍第i至8項中任一/、,上 填液噴嘴。 貝所述的 15·如申請專利範圍第12或13項之基板處理裳置,盆 中’上述第二填液喷嘴係具有供將來自外部的處理夜、 於上述吐出口中的處理液供應路;而上述處理液瘅^丨 垂直於保持於上述基板保持機構上的基板表面。/、應路係 1 6 · —種基板處理方法,係將處理液填液於 的方法,其特徵在於·· 、土 表面上 將具備有在第一方向上為長細縫狀吐出口, I 方^ p i 出口之填液面的填液喷嘴,配置於基板表面上方· 、530337 6. The scope of the patent application has a slit-shaped discharge port along the first direction, and the processing substrate is replaced by the wrong% π n I> the first filling liquid on the substrate surface held by the upper plate holding stack structure Slightly. In the second direction crossing the first direction, the first-埴 '+ 1 row' has a slit-shaped discharge port extending in the-direction above: == the above-mentioned filling nozzle A second liquid-filling nozzle for filling the liquid-treating liquid on the substrate surface of the liquid-filling processing liquid; and a moving mechanism for moving the substrate in the same direction relative to the first and second liquid-filling nozzles. No. ^ 13. If the substrate processing device of the scope of application for patent No. 12 is repeated, the first and the second: liquid filling nozzles are based on the surface of the substrate held on the substrate holding mechanism according to the discharge of the liquid filling nozzles. The interval is arranged in a dagger manner between the 7y th liquid-filling nozzle and the substrate surface. See the detailed description 1 4. If the substrate processing device of the patent application No. 丨 2, the first liquid filling nozzle is any one of the items i to 8 of the patent application scope, and the liquid filling nozzle is above. 15. In the case of the substrate processing device described in item 12 or 13 of the scope of patent application, the above-mentioned second liquid filling nozzle in the basin has a processing liquid supply path for processing processing from the outside and in the discharge port; The processing liquid is perpendicular to the surface of the substrate held on the substrate holding mechanism. / 、 Response system 16 A substrate processing method is a method for filling the processing liquid with liquid, characterized in that the soil surface will be provided with a long and narrow slit-shaped discharge port in the first direction, I Filling nozzle for filling surface of ^ pi outlet, placed above the substrate surface. C:\2D-C0DE\91-05\91103129.ptd 第27頁 530337 六、申請專利範圍 的= =嘴的吐出口吐出處理液,並將處理液面狀 们w留於上述填液面中; 滯:ΐίΐίΐ液喷嘴與基板進行相對移動,-邊使面狀 處理Ξΐϊϊ 的處理液’接觸於基板表面上,而將 處理液填液於上述基板表面上。 理1 液7對如上申Λ專Λ範圍第16項之基板處理方法,其中,處 近處,面填液的階段’係在上述基板的前頭附 板對上述填液噴嘴加速移動,而在上述基 速产乂 τ t f上述基板對上述填液嘴嘴移動設定為一定 噴ί的ίΐίΐ的後端處附近則將上述基板對上述填液 唷噍的移動予以減速。 Λ8·、:種Λ板處理方法,係將處理液填液於基板表面上 的方法,其特徵在於: 將在第一方向上具長細縫狀吐出口的 置於基板表面上方; 具狀嘎%在 將j亡述第一方:上具長細縫狀吐出口的第二填液喷 、’+在父又於上述第一方向的第二方向上,與上述第一填 =:ί ϊ ί位於基板表面上方,並依吐出口與基板表 的間隔更寬廣的方ii置;…的吐出口與基板表面間 ,τ ΐ使上述第—填液喷嘴與基板進行相對移自,-邊從 二第-填液喷嘴的吐出口吐出處理⑨,並填液於基板表 面上; 一邊使上述第二填液喷嘴與基板進行相對移動,一邊在C: \ 2D-C0DE \ 91-05 \ 91103129.ptd page 27 530337 VI. The patent application scope = = the mouth of the mouth discharges the treatment liquid, and leaves the treatment liquid surface w in the above-mentioned filling surface; Stagnation: The liquid nozzle is relatively moved to the substrate, while the processing liquid of the planar treatment is brought into contact with the surface of the substrate, and the processing liquid is filled on the surface of the substrate. The liquid 1 treatment method for the substrate according to item 16 of the above claim Λ range, in which the stage of surface filling is near and near the front plate of the substrate, and the filling nozzle is accelerated to move. At a base speed of 乂 τ tf, the movement of the substrate to the liquid filling nozzle near the rear end of the liquid filling nozzle is decelerated. Λ8 ·: A kind of Λ plate processing method, which is a method of filling the processing liquid on the surface of the substrate, which is characterized in that: a long slit-shaped discharge opening in the first direction is placed above the surface of the substrate; %% will be described in the first party: the second filling liquid with a long slit-shaped discharge opening, '+ in the second direction of the father in the first direction, and the first filling =: ί ϊ ί is located above the substrate surface, and is arranged according to a wider distance between the ejection outlet and the surface of the substrate; between the ejection outlet and the surface of the substrate, τ ΐ causes the first liquid-filling nozzle and the substrate to move relative to each other, -side from The second outlet of the second liquid-filling nozzle discharges the treatment ⑨ and fills the liquid on the substrate surface; while the second liquid-filling nozzle and the substrate are relatively moved, the 530337 六、申請專利範圍 已利用上述第一填液啥♦而姑话 液良理液。、I备而破填液上處理液的基板上,填 的1 方9法一,種其基特 置具長細縫狀吐出口的第-填液喷嘴,設 將二亡述=一方向上具長細縫狀吐出口的第二填液噴 液育嘴並排’且位於基板表面上方,並依吐出、口 面間的間㈤’較上述第一填液喷嘴的吐出口: 的間隔更寬廣的方式配置著; 一土板表面間 從上述第一填液噴嘴的吐出口吐出處理液, 面狀滯留於上述填液面上;· 並使處理液 -,使上述第-填液喷嘴與基板進行相對移冑, 基板表面接觸於面狀滯留於上述填液面中的 邊使 上述基板表面填液處理液; 液’而對 二邊使上述第二填液喷嘴與基板進行相對移動, 已利用上述第一填液喷嘴而被填液上處理液邊在 液處理液。 從的基板上,填 20. —種基板處理裝置,係供將處理液填 基板處理裝置,其特徵在於具備有: 、反上的 保持被處理基板的基板保持機構; 具有沿第一方向的細縫狀吐出口 ,並將 持在上述基板保持機構上的基板表面上 ^喈液於保 、具液噴嘴;以及530337 VI. Scope of patent application The above-mentioned first filling liquid has been used. 1. I prepared the substrate on the processing liquid on the filling liquid, filled it with 1 method, 9 methods, and a kind of liquid-filling nozzle with a long slit-shaped discharge port on its base. The second liquid-filled spray nozzles with a long slit-shaped discharge port are side by side and located above the surface of the substrate, and according to the interval between the discharge and the mouth-to-mouth surface, the interval is wider than that of the first liquid-filled nozzle. The method is arranged; a processing liquid is discharged from the discharge port of the first liquid filling nozzle between the surfaces of the soil plate, and the liquid remains on the liquid filling surface; and the processing liquid is made to make the first liquid filling nozzle and the substrate perform Relative displacement, the substrate surface is in contact with the surface remaining in the liquid-filled surface while the substrate surface is filled with the liquid treatment liquid; and the second liquid-filled nozzle and the substrate are relatively moved on the two sides. The first liquid filling nozzle is provided with the processing liquid while being filled with the processing liquid. From the substrate, fill 20. A substrate processing apparatus for filling the processing liquid with the substrate processing apparatus, which is characterized by having: a substrate holding mechanism for holding the substrate to be processed on the reverse side; A slit-shaped discharge port, and holding a liquid holding nozzle on the surface of the substrate held on the substrate holding mechanism; and C:\2D-00DE\9l-05\9H03129.ptd 第29頁 530337 六、申請專利範圍 - 將上述基板相對於上述填液喷嘴,朝交又於上述第一方 向的第二方向移動的移動機構; 其中’上述填液喷嘴係略平行保持於上述基板保持機構 上之基板’且具有朝下方的填液面,在相連於上述填液面 且較上述填液面更上方位置處的面上,設有上述吐出口。 2 1 ·如申請專利範圍第2 0項之基板處理裝置,其中,上 述填液喷嘴係將依從上述細·縫狀吐出口所吐出的處理液, 利用表面張力而包圍上述填液面的方式構成。 22·如申請專利範圍第20或21項之基板處理裝置,其 中,上述基板保持機構係將基板呈略水平姿態保持著; 上述填液面係朝下的略水平面。C: \ 2D-00DE \ 9l-05 \ 9H03129.ptd Page 29 530337 6. Scope of patent application-Moving mechanism for moving the above-mentioned substrate with respect to the liquid-filling nozzle in the second direction crossing the first direction ; Where the above-mentioned liquid-filling nozzle is a substrate held on the substrate holding mechanism slightly parallel and has a liquid-filling surface facing downward, on a surface connected to the liquid-filling surface and at a position higher than the liquid-filling surface, The above-mentioned outlet is provided. 2 1 · The substrate processing apparatus according to the scope of application for patent No. 20, wherein the liquid filling nozzle is configured to surround the liquid filling surface with surface tension according to the processing liquid discharged from the thin and slit-shaped discharge port. . 22. The substrate processing apparatus according to claim 20 or 21, wherein the substrate holding mechanism holds the substrate in a slightly horizontal posture; the liquid filling surface is a slightly horizontal surface facing downward. 第30頁Page 30
TW091103129A 2001-02-26 2002-02-22 Substrate processing apparatus and substrate processing method TW530337B (en)

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JP4593908B2 (en) * 2003-12-17 2010-12-08 芝浦メカトロニクス株式会社 Substrate processing equipment with processing liquid
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