TWI308371B - - Google Patents
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- Publication number
- TWI308371B TWI308371B TW92103937A TW92103937A TWI308371B TW I308371 B TWI308371 B TW I308371B TW 92103937 A TW92103937 A TW 92103937A TW 92103937 A TW92103937 A TW 92103937A TW I308371 B TWI308371 B TW I308371B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- wafer
- batch
- cleaning
- plasma
- Prior art date
Links
- 238000012545 processing Methods 0.000 claims description 236
- 238000000034 method Methods 0.000 claims description 123
- 235000012431 wafers Nutrition 0.000 claims description 93
- 238000004140 cleaning Methods 0.000 claims description 83
- 230000008569 process Effects 0.000 claims description 82
- 230000005856 abnormality Effects 0.000 claims description 48
- 239000004065 semiconductor Substances 0.000 claims description 43
- 230000002159 abnormal effect Effects 0.000 claims description 10
- 238000004886 process control Methods 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 238000011084 recovery Methods 0.000 description 55
- 238000010586 diagram Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 239000000523 sample Substances 0.000 description 8
- 238000001748 luminescence spectrum Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000513 principal component analysis Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92103937A TW200416921A (en) | 2003-02-25 | 2003-02-25 | Control method for semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92103937A TW200416921A (en) | 2003-02-25 | 2003-02-25 | Control method for semiconductor processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200416921A TW200416921A (en) | 2004-09-01 |
| TWI308371B true TWI308371B (enExample) | 2009-04-01 |
Family
ID=45071815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92103937A TW200416921A (en) | 2003-02-25 | 2003-02-25 | Control method for semiconductor processing device |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200416921A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI494920B (zh) * | 2009-04-14 | 2015-08-01 | Hynix Semiconductor Inc | 半導體記憶體裝置及其更新控制方法 |
-
2003
- 2003-02-25 TW TW92103937A patent/TW200416921A/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI494920B (zh) * | 2009-04-14 | 2015-08-01 | Hynix Semiconductor Inc | 半導體記憶體裝置及其更新控制方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200416921A (en) | 2004-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |