TWI308367B - - Google Patents
Download PDFInfo
- Publication number
- TWI308367B TWI308367B TW92101410A TW92101410A TWI308367B TW I308367 B TWI308367 B TW I308367B TW 92101410 A TW92101410 A TW 92101410A TW 92101410 A TW92101410 A TW 92101410A TW I308367 B TWI308367 B TW I308367B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- cleaning
- wet process
- carrier component
- wafer carrier
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 32
- 239000000243 solution Substances 0.000 claims description 18
- 238000011109 contamination Methods 0.000 claims description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 239000013618 particulate matter Substances 0.000 claims description 7
- 230000009471 action Effects 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 5
- 239000012498 ultrapure water Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 3
- 230000035939 shock Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 95
- 238000005530 etching Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000011859 microparticle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000238631 Hexapoda Species 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000004043 dyeing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000009285 membrane fouling Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 235000014347 soups Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200414337A TW200414337A (en) | 2004-08-01 |
| TWI308367B true TWI308367B (cg-RX-API-DMAC7.html) | 2009-04-01 |
Family
ID=45071813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200414337A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11037805B2 (en) * | 2018-11-23 | 2021-06-15 | Nanya Technology Corporation | Wafer cleaning apparatus and method of cleaning wafer |
-
2003
- 2003-01-22 TW TW92101410A patent/TW200414337A/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200414337A (en) | 2004-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6274059B1 (en) | Method to remove metals in a scrubber | |
| KR102418491B1 (ko) | 포토마스크 세정 프로세스들 | |
| TWI584349B (zh) | 清洗晶圓的方法及清洗晶圓的系統 | |
| JP2009543344A (ja) | 液体メニスカスによるポストエッチウエハ表面洗浄 | |
| KR101674263B1 (ko) | 웨이퍼 세정을 위한 메커니즘들 | |
| JP3624809B2 (ja) | 洗浄剤組成物、洗浄方法及びその用途 | |
| JP6275090B2 (ja) | 工程分離型基板処理装置及び処理方法 | |
| JPH11260778A (ja) | 枚葉式表面洗浄方法及び装置 | |
| JPH10256211A (ja) | 半導体基板の洗浄方法 | |
| TWI308367B (cg-RX-API-DMAC7.html) | ||
| CN115910756A (zh) | 晶圆的清洗方法 | |
| KR102712922B1 (ko) | 웨이퍼 세정 장치 및 그 세정 방법 | |
| JPH09246224A (ja) | ウエハの洗浄方法 | |
| JP4766836B2 (ja) | フォトマスク基板の洗浄方法 | |
| JPH07283182A (ja) | 半導体基板の洗浄方法 | |
| WO2000021692A1 (en) | Fast single-article megasonic cleaning process | |
| JP4328587B2 (ja) | 基板処理装置及び基板処理方法 | |
| KR100633997B1 (ko) | 화학적 기계적 연마 장치의 브러쉬 세정방법 | |
| KR100906043B1 (ko) | 반도체 소자의 세정 방법 | |
| JP2009135137A (ja) | 洗浄方法および洗浄装置 | |
| JP2000049132A (ja) | 半導体基板の洗浄方法 | |
| CN116213353A (zh) | 研磨后清洗方法 | |
| JPH0950978A (ja) | 液相エピタキシャルウエーハの残留Ｇａ除去方法 | |
| JP2000049133A (ja) | 半導体基板を洗浄する方法 | |
| JPH05343384A (ja) | 洗浄装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |