TWI308367B - - Google Patents

Description

1308367 _ Case No. 92101410_ Yearly Revision _ V. INSTRUCTION DESCRIPTION (1) Technical Field of the Invention: The present invention relates to a wet process of a wafer, and more particularly to the reduction of particles and defects (Dicfects) Wafer wet process method. Prior Art: The wet process used in the semiconductor process is dominated by wafer cleaning (Wafer C 1 e a n i n g ) and wet I insect engraving (W e t E t c h i n g ). Among them, the purpose of wafer cleaning is to remove metal impurities, organic contamination and fine dust on the wafer, and to take account of surface roughness and the removal of natural oxides (N a t i v e 0 X i d e) that may be formed. There are two main types of wafer contamination: one is microparticles and the other is a membrane. Microparticle sources include stone chips, quartz chips, air, dust, dust from clean room personnel and process machines, such as photoresist sheets and bacteria. Membrane fouling is a foreign matter on the wafer, and some of the film will loosen and become micro particles, such as photoresist scum, while the remaining film is contaminated with organic solvent residues such as acetone, trichloroethylene, isopropanol, decyl alcohol, and Toluene, photoresist, oil film and metal film. Both chemical cleaning and photoresist removal are used to remove membrane contamination. The main chemical cleaning uses acid and cleaning tanks for wafer cleaning. Wet etching is the first etching technique used, mainly by chemical reaction between a film and a specific solution to remove a film that is not covered by a photoresist. The advantage of wet etching is that the process is simple and the production speed is fast. Since the chemical reaction is used to remove the thin film, the chemical reaction has no directivity, so it is an isotropic etching. The chemical reaction of wet etching belongs to the reverse of liquid phase and solid phase

Page 5 1308367 _ Case No. 92101410_ Year Month 曰 Correction _ V. Invention Description (2) When the wet residual action is performed, first, the reactants in the solution use a diffusion effect to pass a layer of a relatively thin boundary layer. (Boundary Layer) to reach the surface of the film to be etched. These reactants then chemically react with the molecules on the surface of the film and produce various products. These products on the surface of the film will also pass through the boundary layer into the solution using the diffusion effect, and then the solution will be discharged. The main parameters controlling the wet residual reaction are: solution concentration, etching time, reaction temperature, stirring with solution, and the like. Because wet etching itself is a chemical reaction. Therefore, the concentration of the etching solution is richer or the temperature is higher. The rate at which the film is removed is also faster. Figure 1 is a side elevational view of the wafer carrier component in a typical wet process cell. Please refer to Figure 1. Since the wet process uses more chemicals and acid-base solution, it is necessary to use a robot arm (not shown) and the wafer carrier component 10 to perform wafer wet process operation when the robot arm will wafer. 1 2 is placed at the front end of the wafer carrier component 10, and the power device can be used to manipulate the rise and fall of the wafer carrier component 10 to immerse the wafer in or out of the wet process slot. In general, the number of wafers that can be accommodated at the front end of the wafer carrier member 10 is about 50 wafers. The mother wafer wafers can be respectively erected in the recesses at the front end of the wafer carrier member 10. Fig. 2 is an enlarged schematic view showing a region 14 in Fig. 1. Referring to FIG. 2, the front end of a general wafer carrying member is composed of a plurality of protrusions 16 and each of the protrusions 16 has a distance therebetween to form a groove 18, thus The circle 1 2 is placed between the grooves 18 to be fixed. Summary of the invention:

Page 6 1308367 Cable No. 92101410__ Year Month Day Amendment V. Invention Description (3)

Dyeing, cleaning and maintenance of the machine equipment on a regular basis. One of the objects of the present invention is to provide a method for reducing particulate matter contamination, after the wafer is etched and cleaned, and a wafer carrier member is added for cleaning. Steps to reduce particles and defects on the wafer and extend the time between cleaning and maintenance of the machine. In addition, another object of the present invention is to provide a method for cleaning a wafer carrier component by using an aqueous solution of ammonium hydroxide and hydrogen peroxide (APM), plus an oscillating manner, for the wafer carrier component and The cleaning bath is cleaned to reduce particles and defects on the wafer. According to the above object, the method for reducing particulate matter contamination of the present invention comprises: firstly: moving a wafer into a wet process tank by using a wafer carrier member to perform a process required for the wafer; and then moving the wafer carrier component, The wafer is moved to the cleaning bath, and the cleaning of the wafer is performed by using a cleaning solution; then the wafer on the wafer carrier member is removed, and the wafer is subjected to the next process; then the wafer carrier component is moved into the cleaning process. In the tank, another cleaning liquid is used to carry out the cleaning step of the wafer carrying 70 pieces. In the preferred embodiment of the present invention, the cleaning liquid of the wafer is made of ammonium hydroxide and a lightly oxidized aqueous solution, and the vibration and the oscillating action of the cleaning tank are used to achieve good wafer particle and trap improvement. effect. The method for reducing particulate matter pollution by the invention can effectively reduce the particles and defects causing the damage of 0 rounds. (5) This can improve the yield and quality of the product.

1308367 Case No. 92101410_May-Day Correction V. Invention Description (4) Embodiment Generally, in the wet process, the wafer 12 is subjected to an etching process in the chemical bath, and then the ultra-pure water cleaning step is usually performed. Remove the residue such as the insect engraving on the wafer. Figure 3 is a schematic diagram of the wet process of the wafer. Please refer to Figure 3 for the robot arm: not shown. Place the wafer on the wafer. The carrier element is then followed by step 100. The wafer carrier element moves the wafer into a 1st groove to allow the wafer to completely enter the chemical solution in the etching bath for chemical reaction. 0 After a lapse of time, the steps are taken. 1 0 2, moving the wafer carrier component to move the wafer into the cleaning bath. After a certain period of cleaning, the step 104 is performed by using a robotic arm to remove the wafer on the wafer carrying member and then performing the steps such as drying, and the subsequent drying steps are performed by other wafer carrying members. 1. There are particles or defects on the wafers in the semiconductors, which often lead to poor product problems. If the chemicals in the process are wet on the machine, the particles and defects on the wafer will be caused. Therefore, the wet processing machine equipment must be cleaned and maintained regularly to prevent the wafers manufactured therein from being contaminated. The present invention discloses a method for reducing damage caused by particles and defects in the wafer in order to make the description of the present invention. More detailed and complete can be seen * Ό The following description and with the diagram of Figure 4. The present invention finds that chemicals and chemicals such as photoresists remain in the bumps 16 and recesses when the wafer carrying member 10 is loaded into the wafer 12 as shown in FIG. In the slot 18. Although the subsequent wafer carrier element 10 will move the wafer into the cleaning bath, it is cleared, for example, with ultrapure water.

Page 8 1308367 _ Case No. 92101410_Yearly 曰 Correction _ V. Description of the invention (5) Washing, but such a cleaning step cannot remove the residue located in the protrusion 16 and the groove 18. This will cause the wafer carrier element 10 to return to the original position to carry another batch of wafers and perform the cooking and cleaning steps, resulting in uncleanness and contamination of the other wafer. Therefore, the present invention proposes a method as shown in Fig. 4. In a preferred embodiment of the present invention, a wafer carrying device is equipped with two wet processing grooves, such as an etching groove and a cleaning groove, to move the wafer between the two, and the other wet processing grooves and the etching groove are The movement between the cleaning tanks can be carried out using a robotic arm. Referring to Figure 4, first, in step 200, the wafer carrier member carries the wafer on the robot arm and moves the wafer into the etching bath. Since the etching method and the chemicals therein are not the focus of the present invention, the present invention is not described herein. After a certain period of time, step 2 0 2 is performed, and the wafer carrying member is moved by the power unit to move the wafer into the cleaning tank. Among them, in one embodiment of the present invention, wafer cleaning is performed using ultrapure water (D. I Water). Then, after the wafer completes the cleaning step, step 504 is performed to move the wafer on the wafer carrier device to the device required for the next step using the robot arm. In an embodiment of the invention, the wafer is subsequently followed by a drying step to remove the cleaning fluid. Thereafter, in step 206, the wafer carrier component of the unloaded wafer is moved back to the cleaning bath to clean the wafer carrier equipment. In a preferred embodiment of the invention, the APM cleaning fluid is utilized for cleaning the wafer carrier equipment. The so-called APM cleaning solution is a mixed aqueous solution of ammonium hydroxide and hydrogen peroxide (ΝΗ40Η + Η 20 2+Η20), which is a cleaning solution commonly used in semiconductor manufacturing.

Page 9 1308367 Case No. 92101410 曰Revision 5, Invention Description (6) Because the above-mentioned cleaning tank filled with ultra-pure water is first replaced with APM cleaning solution, then the wafer carrier components are moved into the production base. The cleaning liquid is used to carry out the wafer carrier element: a medium is added, for example, an ultrasonic vibration action is added. When the above APM cleaning solution and the oscillating step are clear, it is found that the residue on the surface of the cleaning tank is used to produce a good effect Y: 曰0a P (planting-component and washing tank surface after the above cleaning step; 曰;凊 proceeding to another batch of wafer processing. The repetitive step 2 〇〇, the invention is characterized in that the 曰 wafer carrier element is not changed in different batches of crystals; 曰:: the moving path of the carrier element The action, and the use of the APM solution and the shock soup ^, the cleaning of the load bearing components and the residual surface of the cleaning tank can remove residual contamination problems in the wafer. Thus, the wafer particles can be reduced and notable. Therefore, the above-mentioned use of ultra-pure other cleaning liquid can also be applied to the wafer cleaning of the present invention is only an example, and the above-mentioned wafer carrying equipment is matched with the present invention, and the present invention is not limited thereto. For example, the visual machine equipment and the process are engraved. The tank and a washing tank are only in quantity, and when there are a plurality of washing tanks for cleaning the etch-etching tank or the washing tank or which washing liquid is 1, the present invention is not limited to which one is washed. The wafer carrying component is used to reduce the particulate contamination and defects of the particulate matter, and the method of providing the wafer can effectively reduce the time on the wafer and increase the cleaning and maintenance of the machine, and the quality of the circuit components. And the machine cleaning step. 16 this, can be separated by 2, or even without the need to periodically increase the production time of the machine, and improve the cleaning liquid

1308367 Case No. 92101410 η Amendment V. Description of invention (7) Productivity of components. The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention as defined by the present invention; Modifications or modifications are intended to be included in the scope of the claims below.

Page 11 1308367 Case No. 92101410 A_Ά 曰Revision of the Drawings The preferred embodiment of the present invention will be explained in more detail with the following figures, wherein: Ϊ Figure 1 shows the wafer in a general wet process tank. Schematic diagram of the side of the carrying member, FIG. 2 is an enlarged view of the area 14 in FIG. 1; FIG. 3 is a schematic diagram of a general wafer wet etching process; and FIG. 4 is a wafer of the present invention Schematic diagram of the wet etching process. Figure number comparison description: 10 crystal round bearing member 12 crystal circle 14 region 16 convex 18 concave groove 100 step 102 step 104 step 200 step 202 step 204 step 206 step

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Claims (1)

1308367 _ Case No. 92101410_年月日日__ VI. Patent application scope 1. A wafer wet process, comprising at least: moving a wafer into a wet process tank by using a wafer carrier component; - moving the wafer Carrying the component, moving the wafer into a cleaning bath, cleaning the wafer with a <丨 first cleaning solution; removing the wafer on the wafer carrier component; and carrying the wafer The component is moved into the cleaning bath and a second cleaning fluid is utilized to clean the wafer carrier component. 2. The wafer wet process of claim 1, wherein the wet process tank is an etch process tank. 3. The wafer wet process according to claim 1, wherein the first cleaning liquid is ultrapure water. 4. The wafer wet process according to claim 1, wherein the second cleaning liquid is a mixed aqueous solution of ammonium hydroxide and hydrogen peroxide. 5. The wafer wet process as described in claim 1, further comprising performing a oscillating operation in the cleaning step of the wafer carrying member. 6. The wafer wet process as described in claim 5, wherein the oscillating action is an ultrasonic oscillating motion. Page 13 1308367 _ Case No. 92101410_年月日日__ VI. Patent application scope 7. The wafer wet process described in claim 1 of the patent application, including the cleaning step of the wafer, is performed. One of the drying steps of the circle. 8. A method for reducing particulate matter contamination, after applying to a wafer wet process, the method for reducing particulate matter contamination comprises at least: moving a wafer carrier component into a cleaning bath to cause a shock in the cleaning tank Acting, and cleaning the wafer carrier member by using a cleaning solution, wherein the composition of the cleaning solution comprises at least a mixed aqueous solution of ammonium hydroxide and hydrogen peroxide. 9. The method of reducing particulate matter pollution according to claim 8, wherein the oscillating action is an ultrasonic oscillation. Page 14 1308367 Case No. 92101410 Lunar New Year Amendment VI, Designation Representative Tu Wu (1), the representative figure of the case is the first - "u_ a picture, the representative figure of the case representative symbol is a simple description 200 step wafer carrier component wafer Move to the 4k groove. Step 202 Move the wafer carrier component into the cleaning bath. 204 Steps to remove the wafer on the wafer carrier component. 206 Move the wafer carrier component of the unloaded wafer to the cleaning bath. Bearing element cleaning Page 3