TW200414337A - Method for reducing particles and defects of wafers - Google Patents
Method for reducing particles and defects of wafers Download PDFInfo
- Publication number
- TW200414337A TW200414337A TW92101410A TW92101410A TW200414337A TW 200414337 A TW200414337 A TW 200414337A TW 92101410 A TW92101410 A TW 92101410A TW 92101410 A TW92101410 A TW 92101410A TW 200414337 A TW200414337 A TW 200414337A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- cleaning
- patent application
- scope
- item
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 56
- 235000012431 wafers Nutrition 0.000 title abstract description 93
- 239000002245 particle Substances 0.000 title abstract description 14
- 230000007547 defect Effects 0.000 title abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 77
- 238000005530 etching Methods 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims description 32
- 239000000243 solution Substances 0.000 claims description 23
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 7
- 239000012498 ultrapure water Substances 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000011109 contamination Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 5
- 239000000908 ammonium hydroxide Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- GSWAOPJLTADLTN-UHFFFAOYSA-N oxidanimine Chemical compound [O-][NH3+] GSWAOPJLTADLTN-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200414337A true TW200414337A (en) | 2004-08-01 |
| TWI308367B TWI308367B (cg-RX-API-DMAC7.html) | 2009-04-01 |
Family
ID=45071813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92101410A TW200414337A (en) | 2003-01-22 | 2003-01-22 | Method for reducing particles and defects of wafers |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200414337A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223791A (zh) * | 2018-11-23 | 2020-06-02 | 南亚科技股份有限公司 | 晶圆清洗装置及其清洗方法 |
-
2003
- 2003-01-22 TW TW92101410A patent/TW200414337A/zh not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223791A (zh) * | 2018-11-23 | 2020-06-02 | 南亚科技股份有限公司 | 晶圆清洗装置及其清洗方法 |
| CN111223791B (zh) * | 2018-11-23 | 2022-07-26 | 南亚科技股份有限公司 | 晶圆清洗装置及其清洗方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI308367B (cg-RX-API-DMAC7.html) | 2009-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6274059B1 (en) | Method to remove metals in a scrubber | |
| TWI645915B (zh) | 基板溼處理裝置 | |
| TWI377453B (en) | Process sequence for photoresist stripping and/or cleaning of photomasks for integrated circuit manufacturing | |
| US6209553B1 (en) | Method of and apparatus for washing photomask and washing solution for photomask | |
| JP2009543344A (ja) | 液体メニスカスによるポストエッチウエハ表面洗浄 | |
| JP6275090B2 (ja) | 工程分離型基板処理装置及び処理方法 | |
| JPH11260778A (ja) | 枚葉式表面洗浄方法及び装置 | |
| JP7020507B2 (ja) | 半導体ウェーハの洗浄方法 | |
| TW200414337A (en) | Method for reducing particles and defects of wafers | |
| KR20190042184A (ko) | 포토 마스크 세정 방법 | |
| JP4766836B2 (ja) | フォトマスク基板の洗浄方法 | |
| TWI276141B (en) | Method of manufacturing an electronic device | |
| CN117316757A (zh) | 晶圆的清洗方法及高压半导体器件的制造方法 | |
| JP2023144107A (ja) | 基板処理装置、および基板処理方法 | |
| CN119213540A (zh) | 用于清洗衬底的设备和方法 | |
| JP3575854B2 (ja) | シリコン単結晶ウエーハの洗浄方法および洗浄装置 | |
| JP2003522406A (ja) | シリコン・ウエハの洗浄方法及び洗浄装置 | |
| CN116213353A (zh) | 研磨后清洗方法 | |
| JP2005051099A (ja) | 基板の洗浄方法 | |
| JP2009135137A (ja) | 洗浄方法および洗浄装置 | |
| JP2006269960A (ja) | 半導体基板の洗浄方法、および半導体基板の製造方法 | |
| JP2000049132A (ja) | 半導体基板の洗浄方法 | |
| CN119725139A (zh) | 晶圆清洗系统 | |
| KR20230096991A (ko) | 에피택셜 웨이퍼의 세정방법 | |
| JPH10256216A (ja) | 半導体装置製造方法および半導体装置製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |