TWI302163B - Polishing composition for noble metals - Google Patents
Polishing composition for noble metals Download PDFInfo
- Publication number
- TWI302163B TWI302163B TW094123058A TW94123058A TWI302163B TW I302163 B TWI302163 B TW I302163B TW 094123058 A TW094123058 A TW 094123058A TW 94123058 A TW94123058 A TW 94123058A TW I302163 B TWI302163 B TW I302163B
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- polishing composition
- acid
- group
- salt
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/901,420 US7161247B2 (en) | 2004-07-28 | 2004-07-28 | Polishing composition for noble metals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200613534A TW200613534A (en) | 2006-05-01 |
| TWI302163B true TWI302163B (en) | 2008-10-21 |
Family
ID=34973040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094123058A TWI302163B (en) | 2004-07-28 | 2005-07-07 | Polishing composition for noble metals |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7161247B2 (https=) |
| EP (2) | EP2431434B1 (https=) |
| JP (2) | JP4516119B2 (https=) |
| KR (1) | KR101201063B1 (https=) |
| CN (1) | CN1993437B (https=) |
| IL (1) | IL179941A (https=) |
| MY (1) | MY143678A (https=) |
| TW (1) | TWI302163B (https=) |
| WO (1) | WO2006023105A1 (https=) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005088188A (ja) * | 2003-08-12 | 2005-04-07 | Fujitsu Ltd | マイクロ揺動素子およびマイクロ揺動素子駆動方法 |
| DE602006013110D1 (de) * | 2005-03-25 | 2010-05-06 | Dupont Air Prod Nanomaterials | In chemisch-mechanischen reinigungszusammensetzungen verwendete dihydroxy-enol-verbindungen mit metall-ionen-oxidationsmitteln |
| US20070039246A1 (en) * | 2005-08-17 | 2007-02-22 | Zhendong Liu | Method for preparing polishing slurry |
| US7803203B2 (en) | 2005-09-26 | 2010-09-28 | Cabot Microelectronics Corporation | Compositions and methods for CMP of semiconductor materials |
| EP2019419A4 (en) * | 2006-05-16 | 2011-04-20 | Showa Denko Kk | METHOD FOR PRODUCING A POLISHING COMPOSITION |
| US7368066B2 (en) * | 2006-05-31 | 2008-05-06 | Cabot Microelectronics Corporation | Gold CMP composition and method |
| US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| US7803711B2 (en) * | 2007-09-18 | 2010-09-28 | Cabot Microelectronics Corporation | Low pH barrier slurry based on titanium dioxide |
| US20090124173A1 (en) * | 2007-11-09 | 2009-05-14 | Cabot Microelectronics Corporation | Compositions and methods for ruthenium and tantalum barrier cmp |
| US7922926B2 (en) * | 2008-01-08 | 2011-04-12 | Cabot Microelectronics Corporation | Composition and method for polishing nickel-phosphorous-coated aluminum hard disks |
| TWI360240B (en) * | 2008-08-25 | 2012-03-11 | Ind Tech Res Inst | Method for packaging a light-emitting diode |
| US9691622B2 (en) | 2008-09-07 | 2017-06-27 | Lam Research Corporation | Pre-fill wafer cleaning formulation |
| CN101684392B (zh) * | 2008-09-26 | 2015-01-28 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US20100096584A1 (en) * | 2008-10-22 | 2010-04-22 | Fujimi Corporation | Polishing Composition and Polishing Method Using the Same |
| WO2010062818A2 (en) * | 2008-11-26 | 2010-06-03 | Applied Materials, Inc. | Two-line mixing of chemical and abrasive particles with endpoint control for chemical mechanical polishing |
| KR101701537B1 (ko) * | 2009-05-08 | 2017-02-01 | 바스프 에스이 | 루테늄 비롯한 귀금속의 화학적 기계적 평탄화를 위한 산화 입자계 슬러리 |
| SG10201401549SA (en) * | 2009-06-22 | 2014-06-27 | Cabot Microelectronics Corp | CMP Compositions And Methods For Suppressing Polysilicon Removal Rates |
| CN101955732B (zh) * | 2009-07-13 | 2016-06-15 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| KR101801413B1 (ko) * | 2009-12-23 | 2017-12-20 | 램 리써치 코포레이션 | 퇴적 후 웨이퍼 세정 포뮬레이션 |
| KR101419156B1 (ko) * | 2009-12-28 | 2014-07-11 | 히타치가세이가부시끼가이샤 | Cmp용 연마액 및 이것을 사용한 연마 방법 |
| KR101396232B1 (ko) * | 2010-02-05 | 2014-05-19 | 한양대학교 산학협력단 | 상변화 물질 연마용 슬러리 및 이를 이용한 상변화 소자 제조 방법 |
| WO2012032469A1 (en) * | 2010-09-08 | 2012-03-15 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices |
| CN102477258B (zh) * | 2010-11-26 | 2015-05-27 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| US8288283B2 (en) * | 2010-12-07 | 2012-10-16 | Texas Instruments Incorporated | Aluminum enhanced palladium CMP process |
| US20140197356A1 (en) * | 2011-12-21 | 2014-07-17 | Cabot Microelectronics Corporation | Cmp compositions and methods for suppressing polysilicon removal rates |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| US8920667B2 (en) | 2013-01-30 | 2014-12-30 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition containing zirconia and metal oxidizer |
| US9434859B2 (en) | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP2017178972A (ja) * | 2014-08-07 | 2017-10-05 | 日立化成株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
| CN104293207B (zh) * | 2014-09-25 | 2016-03-23 | 姚雳 | 一种化学机械抛光液及其制备方法 |
| WO2016065057A1 (en) * | 2014-10-21 | 2016-04-28 | Cabot Microelectronics Corporation | Corrosion inhibitors and related compositions and methods |
| US9422455B2 (en) * | 2014-12-12 | 2016-08-23 | Cabot Microelectronics Corporation | CMP compositions exhibiting reduced dishing in STI wafer polishing |
| US10937691B2 (en) | 2018-09-27 | 2021-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming an abrasive slurry and methods for chemical-mechanical polishing |
| JP7380238B2 (ja) * | 2019-02-19 | 2023-11-15 | Agc株式会社 | 研磨用組成物および研磨方法 |
| KR102916526B1 (ko) | 2019-06-14 | 2026-01-22 | 삼성전자 주식회사 | 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| WO2021060234A1 (ja) * | 2019-09-27 | 2021-04-01 | 株式会社トクヤマ | RuO4ガスの発生抑制剤及びRuO4ガスの発生抑制方法 |
| CN110923778A (zh) * | 2019-11-28 | 2020-03-27 | 西安昆仑工业(集团)有限责任公司 | 一种压铸铝表面处理方法 |
| US20220277964A1 (en) * | 2021-02-26 | 2022-09-01 | International Business Machines Corporation | Chemical mechanical planarization slurries and processes for platinum group metals |
Family Cites Families (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6396599A (ja) | 1986-10-14 | 1988-04-27 | 三菱重工業株式会社 | 金属ルテニウムの溶解法 |
| JPH01270512A (ja) | 1988-04-21 | 1989-10-27 | Tanaka Kikinzoku Kogyo Kk | 貴金属の溶解方法 |
| US5196353A (en) | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
| US6614529B1 (en) | 1992-12-28 | 2003-09-02 | Applied Materials, Inc. | In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization |
| BE1007280A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Werkwijze voor het polijsten van een oppervlak van een edelmetaal of een in hoofdzaak edelmetaal bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze en polijstmiddel geschikt voor toepassing in de werkwijze. |
| US5658183A (en) | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
| JP3270282B2 (ja) | 1994-02-21 | 2002-04-02 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| JP3313505B2 (ja) | 1994-04-14 | 2002-08-12 | 株式会社日立製作所 | 研磨加工法 |
| US5691219A (en) | 1994-09-17 | 1997-11-25 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor memory device |
| US5527423A (en) | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5964643A (en) | 1995-03-28 | 1999-10-12 | Applied Materials, Inc. | Apparatus and method for in-situ monitoring of chemical mechanical polishing operations |
| US5893796A (en) | 1995-03-28 | 1999-04-13 | Applied Materials, Inc. | Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus |
| US5838447A (en) | 1995-07-20 | 1998-11-17 | Ebara Corporation | Polishing apparatus including thickness or flatness detector |
| US5958794A (en) | 1995-09-22 | 1999-09-28 | Minnesota Mining And Manufacturing Company | Method of modifying an exposed surface of a semiconductor wafer |
| DE69734868T2 (de) * | 1996-07-25 | 2006-08-03 | Dupont Air Products Nanomaterials L.L.C., Tempe | Zusammensetzung und verfahren zum chemisch-mechanischen polieren |
| US5872633A (en) | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6068787A (en) * | 1996-11-26 | 2000-05-30 | Cabot Corporation | Composition and slurry useful for metal CMP |
| US5876266A (en) * | 1997-07-15 | 1999-03-02 | International Business Machines Corporation | Polishing pad with controlled release of desired micro-encapsulated polishing agents |
| JPH1180708A (ja) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | 研磨用組成物 |
| JPH11121411A (ja) | 1997-10-09 | 1999-04-30 | Matsushita Electron Corp | 研磨用スラリー,白金族系金属膜の研磨方法及び半導体記憶装置のセル形成方法 |
| US6143192A (en) | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
| US6274063B1 (en) | 1998-11-06 | 2001-08-14 | Hmt Technology Corporation | Metal polishing composition |
| US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
| US6290736B1 (en) * | 1999-02-09 | 2001-09-18 | Sharp Laboratories Of America, Inc. | Chemically active slurry for the polishing of noble metals and method for same |
| US6251150B1 (en) * | 1999-05-27 | 2001-06-26 | Ekc Technology, Inc. | Slurry composition and method of chemical mechanical polishing using same |
| DE19927286B4 (de) * | 1999-06-15 | 2011-07-28 | Qimonda AG, 81739 | Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche |
| US6419554B2 (en) * | 1999-06-24 | 2002-07-16 | Micron Technology, Inc. | Fixed abrasive chemical-mechanical planarization of titanium nitride |
| TW490756B (en) * | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| US20020039839A1 (en) * | 1999-12-14 | 2002-04-04 | Thomas Terence M. | Polishing compositions for noble metals |
| JP2004514266A (ja) * | 1999-12-14 | 2004-05-13 | ロデール ホールディングス インコーポレイテッド | 貴金属用研磨組成物 |
| US20030006396A1 (en) * | 1999-12-14 | 2003-01-09 | Hongyu Wang | Polishing composition for CMP having abrasive particles |
| JP4001219B2 (ja) * | 2000-10-12 | 2007-10-31 | Jsr株式会社 | 化学機械研磨用水系分散体及び化学機械研磨方法 |
| TWI296006B (https=) | 2000-02-09 | 2008-04-21 | Jsr Corp | |
| US6534327B2 (en) * | 2000-04-13 | 2003-03-18 | Texas Instruments Incorporated | Method for reworking metal layers on integrated circuit bond pads |
| DE10024874A1 (de) | 2000-05-16 | 2001-11-29 | Siemens Ag | Polierflüssigkeit und Verfahren zur Strukturierung von Metallen und Metalloxiden |
| DE10026299A1 (de) | 2000-05-26 | 2001-11-29 | Sunyx Surface Nanotechnologies | Substrat mit gering lichtstreuender, ultraphober Oberfläche und Verfahren zu seiner Herstellung |
| JP3993369B2 (ja) * | 2000-07-14 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
| US6867448B1 (en) * | 2000-08-31 | 2005-03-15 | Micron Technology, Inc. | Electro-mechanically polished structure |
| DE10048477B4 (de) * | 2000-09-29 | 2008-07-03 | Qimonda Ag | Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe |
| JP2002158194A (ja) * | 2000-11-20 | 2002-05-31 | Toshiba Corp | 化学的機械的研磨用スラリ及び半導体装置の製造方法 |
| JP4009986B2 (ja) * | 2000-11-29 | 2007-11-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物、およびそれを用いてメモリーハードディスクを研磨する研磨方法 |
| US6326305B1 (en) * | 2000-12-05 | 2001-12-04 | Advanced Micro Devices, Inc. | Ceria removal in chemical-mechanical polishing of integrated circuits |
| US7012025B2 (en) * | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
| US20020124867A1 (en) * | 2001-01-08 | 2002-09-12 | Apl Co., Ltd. | Apparatus and method for surface cleaning using plasma |
| WO2002061810A1 (en) * | 2001-01-16 | 2002-08-08 | Cabot Microelectronics Corporation | Ammonium oxalate-containing polishing system and method |
| JP3736440B2 (ja) * | 2001-02-02 | 2006-01-18 | 株式会社セガ | カード及びカードゲーム装置 |
| EP1369906B1 (en) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polishing compound and method for polishing substrate |
| US7232514B2 (en) * | 2001-03-14 | 2007-06-19 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6589100B2 (en) * | 2001-09-24 | 2003-07-08 | Cabot Microelectronics Corporation | Rare earth salt/oxidizer-based CMP method |
| US6884723B2 (en) | 2001-12-21 | 2005-04-26 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using complexing agents |
| US7049237B2 (en) | 2001-12-21 | 2006-05-23 | Micron Technology, Inc. | Methods for planarization of Group VIII metal-containing surfaces using oxidizing gases |
| US7121926B2 (en) | 2001-12-21 | 2006-10-17 | Micron Technology, Inc. | Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article |
| KR100444308B1 (ko) | 2001-12-29 | 2004-08-16 | 주식회사 하이닉스반도체 | 반도체 소자의 형성 방법 |
| US7004819B2 (en) * | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
| US6527622B1 (en) * | 2002-01-22 | 2003-03-04 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US7097541B2 (en) * | 2002-01-22 | 2006-08-29 | Cabot Microelectronics Corporation | CMP method for noble metals |
| US7524346B2 (en) | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
| US6776810B1 (en) | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030168627A1 (en) | 2002-02-22 | 2003-09-11 | Singh Rajiv K. | Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers |
| US7259219B2 (en) | 2002-04-12 | 2007-08-21 | Dow Global Technologies Inc. | Low molecular weight copolymer of ethylene and vinyl aromatic monomer and uses thereof |
| US20030194959A1 (en) * | 2002-04-15 | 2003-10-16 | Cabot Microelectronics Corporation | Sintered polishing pad with regions of contrasting density |
| US6706632B2 (en) * | 2002-04-25 | 2004-03-16 | Micron Technology, Inc. | Methods for forming capacitor structures; and methods for removal of organic materials |
| US6641630B1 (en) * | 2002-06-06 | 2003-11-04 | Cabot Microelectronics Corp. | CMP compositions containing iodine and an iodine vapor-trapping agent |
| US6604987B1 (en) * | 2002-06-06 | 2003-08-12 | Cabot Microelectronics Corporation | CMP compositions containing silver salts |
| US6974777B2 (en) | 2002-06-07 | 2005-12-13 | Cabot Microelectronics Corporation | CMP compositions for low-k dielectric materials |
| JP2004189894A (ja) * | 2002-12-11 | 2004-07-08 | Asahi Kasei Chemicals Corp | 金属用研磨組成物 |
| US20050045852A1 (en) * | 2003-08-29 | 2005-03-03 | Ameen Joseph G. | Particle-free polishing fluid for nickel-based coating planarization |
-
2004
- 2004-07-28 US US10/901,420 patent/US7161247B2/en not_active Expired - Lifetime
-
2005
- 2005-07-01 EP EP11187617.3A patent/EP2431434B1/en not_active Expired - Lifetime
- 2005-07-01 JP JP2007523580A patent/JP4516119B2/ja not_active Expired - Fee Related
- 2005-07-01 WO PCT/US2005/023654 patent/WO2006023105A1/en not_active Ceased
- 2005-07-01 CN CN2005800255635A patent/CN1993437B/zh not_active Expired - Fee Related
- 2005-07-01 KR KR1020077004725A patent/KR101201063B1/ko not_active Expired - Fee Related
- 2005-07-01 EP EP05767671.0A patent/EP1797152B1/en not_active Expired - Lifetime
- 2005-07-07 TW TW094123058A patent/TWI302163B/zh not_active IP Right Cessation
- 2005-07-26 MY MYPI20053434A patent/MY143678A/en unknown
-
2006
- 2006-12-10 IL IL179941A patent/IL179941A/en not_active IP Right Cessation
-
2008
- 2008-05-14 JP JP2008127318A patent/JP2009006469A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070049185A (ko) | 2007-05-10 |
| IL179941A0 (en) | 2007-05-15 |
| EP2431434B1 (en) | 2017-11-01 |
| US20060024967A1 (en) | 2006-02-02 |
| EP1797152A1 (en) | 2007-06-20 |
| JP2009006469A (ja) | 2009-01-15 |
| WO2006023105A1 (en) | 2006-03-02 |
| US7161247B2 (en) | 2007-01-09 |
| EP1797152B1 (en) | 2015-09-16 |
| KR101201063B1 (ko) | 2012-11-14 |
| TW200613534A (en) | 2006-05-01 |
| CN1993437B (zh) | 2013-07-31 |
| JP2008518427A (ja) | 2008-05-29 |
| CN1993437A (zh) | 2007-07-04 |
| MY143678A (en) | 2011-06-30 |
| IL179941A (en) | 2011-04-28 |
| JP4516119B2 (ja) | 2010-08-04 |
| EP2431434A1 (en) | 2012-03-21 |
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