TWI300584B - Overlay metrology using scatterometry profiling - Google Patents
Overlay metrology using scatterometry profiling Download PDFInfo
- Publication number
- TWI300584B TWI300584B TW092108572A TW92108572A TWI300584B TW I300584 B TWI300584 B TW I300584B TW 092108572 A TW092108572 A TW 092108572A TW 92108572 A TW92108572 A TW 92108572A TW I300584 B TWI300584 B TW I300584B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- alignment
- layers
- semiconductor wafer
- electromagnetic energy
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 230000006870 function Effects 0.000 claims description 8
- 230000003595 spectral effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 103
- 239000010410 layer Substances 0.000 description 40
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 239000002019 doping agent Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000001427 coherent effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000012407 engineering method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/158,775 US6985229B2 (en) | 2002-05-30 | 2002-05-30 | Overlay metrology using scatterometry profiling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200407961A TW200407961A (en) | 2004-05-16 |
| TWI300584B true TWI300584B (en) | 2008-09-01 |
Family
ID=22569655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092108572A TWI300584B (en) | 2002-05-30 | 2003-04-14 | Overlay metrology using scatterometry profiling |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6985229B2 (enExample) |
| JP (2) | JP5025882B2 (enExample) |
| KR (1) | KR100948495B1 (enExample) |
| GB (1) | GB2390899A (enExample) |
| TW (1) | TWI300584B (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
| US7349090B2 (en) | 2000-09-20 | 2008-03-25 | Kla-Tencor Technologies Corp. | Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography |
| US7196782B2 (en) * | 2000-09-20 | 2007-03-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thin film characteristic and an electrical property of a specimen |
| WO2003019523A1 (en) * | 2001-08-23 | 2003-03-06 | Fei Company | Graphical automated machine control and metrology |
| US20040041912A1 (en) * | 2002-09-03 | 2004-03-04 | Jiabin Zeng | Method and apparatus for video metrology |
| US6950190B2 (en) * | 2003-01-09 | 2005-09-27 | Therma-Wave, Inc. | Scatterometry for junction metrology |
| JPWO2004107415A1 (ja) * | 2003-05-28 | 2006-07-20 | 株式会社ニコン | 位置情報計測方法及び装置、並びに露光方法及び装置 |
| US7271921B2 (en) * | 2003-07-23 | 2007-09-18 | Kla-Tencor Technologies Corporation | Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning |
| GB0409485D0 (en) * | 2004-04-28 | 2004-06-02 | Ucl Biomedica Plc | Fluid propelled endoscope |
| US20080144036A1 (en) * | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| JP4624040B2 (ja) * | 2004-09-06 | 2011-02-02 | 日本水産株式会社 | 菌体培養方法 |
| DE102004047624A1 (de) * | 2004-09-30 | 2006-04-20 | Infineon Technologies Ag | Verfahren zur Korrektur der Überdeckungsgenauigkeit bei der photolithographischen Strukturierung eines Halbleiterwafers |
| CN100468792C (zh) * | 2004-11-24 | 2009-03-11 | 杨秋忠 | 整合型发光二极管及其制造方法 |
| WO2006093722A2 (en) * | 2005-02-25 | 2006-09-08 | Accent Optical Technologies, Inc. | Methods and systems for determining overlay error based on target image symmetry |
| KR20070033106A (ko) * | 2005-09-20 | 2007-03-26 | 삼성전자주식회사 | 반도체 소자의 오버레이 측정 방법 및 오버레이 측정시스템 |
| US7738729B2 (en) * | 2006-08-02 | 2010-06-15 | Morpho Detection, Inc. | Systems and methods for reducing an artifact within an image |
| US7858404B2 (en) | 2007-03-14 | 2010-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Measurement of overlay offset in semiconductor processing |
| US7751067B1 (en) * | 2007-05-24 | 2010-07-06 | Ultratech, Inc. | Substrate-alignment using detector of substrate material |
| US20090296075A1 (en) * | 2008-05-29 | 2009-12-03 | Nanometrics Incorporated | Imaging Diffraction Based Overlay |
| JP5623033B2 (ja) * | 2009-06-23 | 2014-11-12 | ルネサスエレクトロニクス株式会社 | 半導体装置、リソグラフィ方法、及び半導体装置の製造方法 |
| NL2005459A (en) | 2009-12-08 | 2011-06-09 | Asml Netherlands Bv | Inspection method and apparatus, and corresponding lithographic apparatus. |
| CN103425004B (zh) * | 2012-05-18 | 2015-07-22 | 上海微电子装备有限公司 | 硅片对准信号的处理方法 |
| WO2014074873A1 (en) * | 2012-11-09 | 2014-05-15 | Kla-Tencor Corporation | Reducing algorithmic inaccuracy in scatterometry overlay metrology |
| US10495982B2 (en) * | 2013-10-28 | 2019-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for real-time overlay error reduction |
| US10311198B2 (en) * | 2014-02-16 | 2019-06-04 | Nova Measuring Instruments Ltd. | Overlay design optimization |
| JP2017083174A (ja) * | 2014-03-13 | 2017-05-18 | 株式会社東芝 | リソグラフィ原版検査方法、および、検出用リソグラフィ原版 |
| KR102237698B1 (ko) * | 2014-04-15 | 2021-04-08 | 삼성전자주식회사 | 오버레이 마크의 비대칭부 검출 방법 및 이를 포함하는 오버레이 계측 방법 |
| US9612108B2 (en) | 2014-11-14 | 2017-04-04 | Kabushiki Kaisha Toshiba | Measurement apparatus and measurement method |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| JP2020041859A (ja) | 2018-09-07 | 2020-03-19 | キオクシア株式会社 | 位置計測方法、位置計測装置および半導体装置の製造方法 |
| US12117735B2 (en) * | 2022-02-16 | 2024-10-15 | Nanya Technology Corporation | Method of determining overlay error during semiconductor fabrication |
| US12422363B2 (en) | 2022-03-30 | 2025-09-23 | Kla Corporation | Scanning scatterometry overlay metrology |
| US12487190B2 (en) | 2022-03-30 | 2025-12-02 | Kla Corporation | System and method for isolation of specific fourier pupil frequency in overlay metrology |
| US20250328087A1 (en) * | 2024-04-22 | 2025-10-23 | Kla Corporation | System and method for determining overlay measurement of a scanning target using multiple wavelengths |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4631416A (en) * | 1983-12-19 | 1986-12-23 | Hewlett-Packard Company | Wafer/mask alignment system using diffraction gratings |
| JPS622112A (ja) * | 1985-06-28 | 1987-01-08 | Ando Electric Co Ltd | 反射光による表面粗さ計 |
| KR900004269B1 (ko) | 1986-06-11 | 1990-06-18 | 가부시기가이샤 도시바 | 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치 |
| JPS6319508A (ja) * | 1986-07-11 | 1988-01-27 | Kobe Steel Ltd | 表面粗さ測定装置 |
| US4728193A (en) | 1986-12-11 | 1988-03-01 | Hughes Aircraft Company | Precision automatic mask-wafer alignment system |
| US4757207A (en) * | 1987-03-03 | 1988-07-12 | International Business Machines Corporation | Measurement of registration of overlaid test patterns by the use of reflected light |
| EP0323242A3 (en) | 1987-12-28 | 1989-10-18 | Kabushiki Kaisha Toshiba | Method and apparatus for aligning two objects, and method and apparatus for providing a desired gap between two objects |
| US5343292A (en) | 1990-10-19 | 1994-08-30 | University Of New Mexico | Method and apparatus for alignment of submicron lithographic features |
| JPH06244261A (ja) * | 1990-12-31 | 1994-09-02 | Texas Instr Inc <Ti> | 半導体装置製造プロセス制御用センサ |
| US5355306A (en) | 1993-09-30 | 1994-10-11 | Motorola, Inc. | Alignment system and method of alignment by symmetrical and asymmetrical analysis |
| GB2297447A (en) * | 1995-01-27 | 1996-07-31 | Seagate Microelectron Ltd | Amplifier |
| US5808742A (en) * | 1995-05-31 | 1998-09-15 | Massachusetts Institute Of Technology | Optical alignment apparatus having multiple parallel alignment marks |
| US5703692A (en) * | 1995-08-03 | 1997-12-30 | Bio-Rad Laboratories, Inc. | Lens scatterometer system employing source light beam scanning means |
| US5877860A (en) * | 1996-05-13 | 1999-03-02 | Boxer Cross, Inc. | System and method for measuring the microroughness of a surface of a substrate |
| US6023338A (en) * | 1996-07-12 | 2000-02-08 | Bareket; Noah | Overlay alignment measurement of wafers |
| US5923423A (en) * | 1996-09-12 | 1999-07-13 | Sentec Corporation | Heterodyne scatterometer for detecting and analyzing wafer surface defects |
| US6483580B1 (en) * | 1998-03-06 | 2002-11-19 | Kla-Tencor Technologies Corporation | Spectroscopic scatterometer system |
| AU2000241455A1 (en) * | 2000-04-28 | 2001-11-12 | Telephony Inc. | Mobile road-assist system |
| JP2003532306A (ja) * | 2000-05-04 | 2003-10-28 | ケーエルエー・テンコール・テクノロジーズ・コーポレーション | リソグラフィ・プロセス制御のための方法およびシステム |
| US6643557B1 (en) * | 2000-06-09 | 2003-11-04 | Advanced Micro Devices, Inc. | Method and apparatus for using scatterometry to perform feedback and feed-forward control |
| US6710876B1 (en) * | 2000-08-14 | 2004-03-23 | Kla-Tencor Technologies Corporation | Metrology system using optical phase |
| EP1184725A1 (en) * | 2000-09-04 | 2002-03-06 | Infineon Technologies SC300 GmbH & Co. KG | Method for adjusting a lithographic tool |
| IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Lateral shift measurement using an optical technique |
| WO2002065545A2 (en) | 2001-02-12 | 2002-08-22 | Sensys Instruments Corporation | Overlay alignment metrology using diffraction gratings |
| CN1261736C (zh) * | 2001-03-02 | 2006-06-28 | 安格盛光电科技公司 | 利用散射测量的线路轮廓不对称测量法 |
| US20020192577A1 (en) * | 2001-06-15 | 2002-12-19 | Bernard Fay | Automated overlay metrology system |
| DE10142316A1 (de) * | 2001-08-30 | 2003-04-17 | Advanced Micro Devices Inc | Halbleiterstruktur und Verfahren zur Bestimmung kritischer Dimensionen und Überlagerungsfehler |
| US6737208B1 (en) * | 2001-12-17 | 2004-05-18 | Advanced Micro Devices, Inc. | Method and apparatus for controlling photolithography overlay registration incorporating feedforward overlay information |
-
2002
- 2002-05-30 US US10/158,775 patent/US6985229B2/en not_active Expired - Fee Related
-
2003
- 2003-04-14 TW TW092108572A patent/TWI300584B/zh not_active IP Right Cessation
- 2003-04-17 GB GB0308958A patent/GB2390899A/en not_active Withdrawn
- 2003-05-30 JP JP2003153590A patent/JP5025882B2/ja not_active Expired - Fee Related
- 2003-05-30 KR KR1020030034713A patent/KR100948495B1/ko not_active Expired - Fee Related
-
2010
- 2010-05-27 JP JP2010121474A patent/JP2010204117A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20030223066A1 (en) | 2003-12-04 |
| TW200407961A (en) | 2004-05-16 |
| GB2390899A (en) | 2004-01-21 |
| US6985229B2 (en) | 2006-01-10 |
| JP5025882B2 (ja) | 2012-09-12 |
| GB0308958D0 (en) | 2003-05-28 |
| KR100948495B1 (ko) | 2010-03-23 |
| JP2004006895A (ja) | 2004-01-08 |
| JP2010204117A (ja) | 2010-09-16 |
| KR20030094047A (ko) | 2003-12-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |