JP2010204117A - スキャタロメトリ識別法を利用したオーバーレイ測定 - Google Patents
スキャタロメトリ識別法を利用したオーバーレイ測定 Download PDFInfo
- Publication number
- JP2010204117A JP2010204117A JP2010121474A JP2010121474A JP2010204117A JP 2010204117 A JP2010204117 A JP 2010204117A JP 2010121474 A JP2010121474 A JP 2010121474A JP 2010121474 A JP2010121474 A JP 2010121474A JP 2010204117 A JP2010204117 A JP 2010204117A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- alignment
- overlay
- feature
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】波長または入射角度の関数としての1つの実施例として、入射ビームの放射は、ウェーハ表面上に向けられ、結果として得られる回折ビームの特性が決定される。スペクトル的、または角度的に分解された回折ビームは、オーバーレイ・フィーチャのアライメントと関連する。計算された回折スペクトルのライブラリは、オーバーレイ・アライメントにおける予期される変動の全ての範囲をモデル化することにより確立される。少なくとも2つの層におけるアライメント・ターゲットを有する実際のウェーハの検査により得られたスペクトルは、実際のアライメントの特性を決定するため、最も適合するもの(ベスト・フィット)を識別するように、ライブラリと比較される。比較の結果は、上流および/または下流処理制御への入力として使用される。
【選択図】図10
Description
12 四角形
14 小さな四角形
16 大きな四角形
20 ウェーハ・フィーチャ
22 基礎フィーチャ
24 矢印
25 複数の左右に延びている線
26 複数の上部から下部に延びている線
30 半導体ウェーハ
34 ターゲット・フィーチャ
36 上面
40 オーバーレイ・マスク
42 複数のグレーチング・ライン
52 基板表面
56 ウェーハ
57 線(ノーマル・ライン)
58 回折されたビーム
60 検出装置
Claims (1)
- 製造において使用する方法であって、
一つが他のものをオーバーレイする少なくとも2つのフィーチャを持つ、ワークピースに電磁放射を照射するステップ;
前記ワークピースから回折された前記放射のスペクトル分解特性を取得するステップ;および
前記2つのフィーチャの相対アライメントを特徴づけるために、前記特性を解析するステップを含むことを特徴とする方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/158,775 US6985229B2 (en) | 2002-05-30 | 2002-05-30 | Overlay metrology using scatterometry profiling |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003153590A Division JP5025882B2 (ja) | 2002-05-30 | 2003-05-30 | スキャタロメトリ識別法を利用したオーバーレイ測定 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010204117A true JP2010204117A (ja) | 2010-09-16 |
JP2010204117A5 JP2010204117A5 (ja) | 2012-01-12 |
Family
ID=22569655
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003153590A Expired - Fee Related JP5025882B2 (ja) | 2002-05-30 | 2003-05-30 | スキャタロメトリ識別法を利用したオーバーレイ測定 |
JP2010121474A Pending JP2010204117A (ja) | 2002-05-30 | 2010-05-27 | スキャタロメトリ識別法を利用したオーバーレイ測定 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003153590A Expired - Fee Related JP5025882B2 (ja) | 2002-05-30 | 2003-05-30 | スキャタロメトリ識別法を利用したオーバーレイ測定 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6985229B2 (ja) |
JP (2) | JP5025882B2 (ja) |
KR (1) | KR100948495B1 (ja) |
GB (1) | GB2390899A (ja) |
TW (1) | TWI300584B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015137464A1 (ja) * | 2014-03-13 | 2015-09-17 | 株式会社 東芝 | 原版の検査方法、検査用原版の作製方法および、原版 |
US9612108B2 (en) | 2014-11-14 | 2017-04-04 | Kabushiki Kaisha Toshiba | Measurement apparatus and measurement method |
Families Citing this family (30)
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US7317531B2 (en) | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
US7541201B2 (en) | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
US7196782B2 (en) * | 2000-09-20 | 2007-03-27 | Kla-Tencor Technologies Corp. | Methods and systems for determining a thin film characteristic and an electrical property of a specimen |
US6891627B1 (en) | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
JP4751017B2 (ja) * | 2001-08-23 | 2011-08-17 | エフ・イ−・アイ・カンパニー | システムを制御する方法およびこの方法のステップを実行するための命令を含むコンピュータ可読媒体 |
US20040041912A1 (en) * | 2002-09-03 | 2004-03-04 | Jiabin Zeng | Method and apparatus for video metrology |
US6950190B2 (en) * | 2003-01-09 | 2005-09-27 | Therma-Wave, Inc. | Scatterometry for junction metrology |
EP1630857A4 (en) * | 2003-05-28 | 2008-04-16 | Nikon Corp | METHOD AND DEVICE FOR MEASURING POSITION INFORMATION, AND METHOD AND SYSTEM FOR EXPOSURE |
US7271921B2 (en) * | 2003-07-23 | 2007-09-18 | Kla-Tencor Technologies Corporation | Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning |
GB0409485D0 (en) * | 2004-04-28 | 2004-06-02 | Ucl Biomedica Plc | Fluid propelled endoscope |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
US20080144036A1 (en) * | 2006-12-19 | 2008-06-19 | Asml Netherlands B.V. | Method of measurement, an inspection apparatus and a lithographic apparatus |
JP4624040B2 (ja) * | 2004-09-06 | 2011-02-02 | 日本水産株式会社 | 菌体培養方法 |
DE102004047624A1 (de) * | 2004-09-30 | 2006-04-20 | Infineon Technologies Ag | Verfahren zur Korrektur der Überdeckungsgenauigkeit bei der photolithographischen Strukturierung eines Halbleiterwafers |
CN100468792C (zh) * | 2004-11-24 | 2009-03-11 | 杨秋忠 | 整合型发光二极管及其制造方法 |
US7477396B2 (en) * | 2005-02-25 | 2009-01-13 | Nanometrics Incorporated | Methods and systems for determining overlay error based on target image symmetry |
KR20070033106A (ko) * | 2005-09-20 | 2007-03-26 | 삼성전자주식회사 | 반도체 소자의 오버레이 측정 방법 및 오버레이 측정시스템 |
US7738729B2 (en) * | 2006-08-02 | 2010-06-15 | Morpho Detection, Inc. | Systems and methods for reducing an artifact within an image |
US7858404B2 (en) | 2007-03-14 | 2010-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Measurement of overlay offset in semiconductor processing |
US7751067B1 (en) * | 2007-05-24 | 2010-07-06 | Ultratech, Inc. | Substrate-alignment using detector of substrate material |
US20090296075A1 (en) * | 2008-05-29 | 2009-12-03 | Nanometrics Incorporated | Imaging Diffraction Based Overlay |
JP5623033B2 (ja) * | 2009-06-23 | 2014-11-12 | ルネサスエレクトロニクス株式会社 | 半導体装置、リソグラフィ方法、及び半導体装置の製造方法 |
NL2005459A (en) | 2009-12-08 | 2011-06-09 | Asml Netherlands Bv | Inspection method and apparatus, and corresponding lithographic apparatus. |
CN103425004B (zh) * | 2012-05-18 | 2015-07-22 | 上海微电子装备有限公司 | 硅片对准信号的处理方法 |
WO2014074873A1 (en) | 2012-11-09 | 2014-05-15 | Kla-Tencor Corporation | Reducing algorithmic inaccuracy in scatterometry overlay metrology |
US10495982B2 (en) * | 2013-10-28 | 2019-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for real-time overlay error reduction |
US10311198B2 (en) * | 2014-02-16 | 2019-06-04 | Nova Measuring Instruments Ltd. | Overlay design optimization |
KR102237698B1 (ko) * | 2014-04-15 | 2021-04-08 | 삼성전자주식회사 | 오버레이 마크의 비대칭부 검출 방법 및 이를 포함하는 오버레이 계측 방법 |
US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
JP2020041859A (ja) | 2018-09-07 | 2020-03-19 | キオクシア株式会社 | 位置計測方法、位置計測装置および半導体装置の製造方法 |
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-
2002
- 2002-05-30 US US10/158,775 patent/US6985229B2/en not_active Expired - Fee Related
-
2003
- 2003-04-14 TW TW092108572A patent/TWI300584B/zh not_active IP Right Cessation
- 2003-04-17 GB GB0308958A patent/GB2390899A/en not_active Withdrawn
- 2003-05-30 KR KR1020030034713A patent/KR100948495B1/ko not_active IP Right Cessation
- 2003-05-30 JP JP2003153590A patent/JP5025882B2/ja not_active Expired - Fee Related
-
2010
- 2010-05-27 JP JP2010121474A patent/JP2010204117A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015137464A1 (ja) * | 2014-03-13 | 2015-09-17 | 株式会社 東芝 | 原版の検査方法、検査用原版の作製方法および、原版 |
US9612108B2 (en) | 2014-11-14 | 2017-04-04 | Kabushiki Kaisha Toshiba | Measurement apparatus and measurement method |
Also Published As
Publication number | Publication date |
---|---|
TW200407961A (en) | 2004-05-16 |
JP2004006895A (ja) | 2004-01-08 |
GB2390899A (en) | 2004-01-21 |
GB0308958D0 (en) | 2003-05-28 |
KR100948495B1 (ko) | 2010-03-23 |
KR20030094047A (ko) | 2003-12-11 |
US20030223066A1 (en) | 2003-12-04 |
US6985229B2 (en) | 2006-01-10 |
JP5025882B2 (ja) | 2012-09-12 |
TWI300584B (en) | 2008-09-01 |
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