TWI286512B - Chip-on-film use copper foil - Google Patents
Chip-on-film use copper foil Download PDFInfo
- Publication number
- TWI286512B TWI286512B TW93103807A TW93103807A TWI286512B TW I286512 B TWI286512 B TW I286512B TW 93103807 A TW93103807 A TW 93103807A TW 93103807 A TW93103807 A TW 93103807A TW I286512 B TWI286512 B TW I286512B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- copper foil
- alloy
- nickel
- particle layer
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 239000011889 copper foil Substances 0.000 title claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 44
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 9
- 239000010941 cobalt Substances 0.000 claims abstract description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000011282 treatment Methods 0.000 claims description 10
- 239000011888 foil Substances 0.000 claims description 9
- 238000005553 drilling Methods 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 36
- 239000000758 substrate Substances 0.000 abstract description 24
- 239000002245 particle Substances 0.000 abstract description 22
- 239000011347 resin Substances 0.000 abstract description 22
- 229920005989 resin Polymers 0.000 abstract description 22
- 229910052759 nickel Inorganic materials 0.000 abstract description 16
- 238000005530 etching Methods 0.000 abstract description 11
- 238000007788 roughening Methods 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 229910000990 Ni alloy Inorganic materials 0.000 abstract description 5
- VDGMIGHRDCJLMN-UHFFFAOYSA-N [Cu].[Co].[Ni] Chemical compound [Cu].[Co].[Ni] VDGMIGHRDCJLMN-UHFFFAOYSA-N 0.000 abstract description 2
- 239000006087 Silane Coupling Agent Substances 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 16
- 229910000831 Steel Inorganic materials 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000010959 steel Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 2
- 235000011130 ammonium sulphate Nutrition 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- ZGDWHDKHJKZZIQ-UHFFFAOYSA-N cobalt nickel Chemical compound [Co].[Ni].[Ni].[Ni] ZGDWHDKHJKZZIQ-UHFFFAOYSA-N 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- OUFLLVQXSGGKOV-UHFFFAOYSA-N copper ruthenium Chemical compound [Cu].[Ru].[Ru].[Ru] OUFLLVQXSGGKOV-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0307—Providing micro- or nanometer scale roughness on a metal surface, e.g. by plating of nodules or dendrites
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0723—Electroplating, e.g. finish plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
- Y10T428/12063—Nonparticulate metal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
- Y10T428/12438—Composite
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12472—Microscopic interfacial wave or roughness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12993—Surface feature [e.g., rough, mirror]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Electroplating Methods And Accessories (AREA)
Description
1286512 玖、發明說明： 【發明所屬之技術領域】 本發明係有關最適合用於精細圖案印刷佈線板中之晶片 軟膜接合（COF)之銅箔者。 【先前技術】 伴隨電子機器之小型化、輕量化，最近之各種電子部件 持續高度積體化。與此相對應，印刷佈線板中之電路圖案 亦要求高密度化，而開始形成包含微細線寬與佈線間距之 電路圖案。特別是，正在推進高密度化的係驅動個人電腦、 灯動電話或PDA之顯示部之液晶顯示器之IC安裝基板，Ic 可直接裝載於基板軟膜上，因此稱為晶片軟膜接合（c〇f)。 於COF安裝中，藉由光透過形成有由㈣而成之佈線圖 案之軟膜，檢測出1C位置。但是，先前之印刷佈線板用電 解銅箱之視覺辨識性（藉由光之IC位置檢測能力）非常低 =。其低劣之原因係在於銅箔之表面粗度較粗糙。因為使 光透過之軟膜部係蝕刻除去鋼電路部以外之不要的銅箔部 之部分，將銅貼付於軟膜上時，㈣表面之凹凸轉印並 殘留於軟膜面上’藉由軟臈表面之凹凸使光通過軟膜之 際，可直進之光之量變少，視覺辨識性變差。 之P刷佈線板用電解銅箔中，該視覺辨識性低劣， 口此於艰酸亞胺軟膜上以濺錢（薄膜形成製程）形成銅層，炎 於其上使用進行銅電鍍之2層材料。 士仁疋4濺鍍銅層與軟膜之密著力較弱，電路製造加工 ^引起蝕刻液或電鍍液侵蝕銅箔與軟膜之間的所謂下切 91051.doc 1286512 現象，又，因該密著力較弱，故而潛藏有作為產品於使用 中發生銅層剝落事故之危險性。 另-方面’作為佈線板用鋼落之處理方法，提議有藉由 於銅泊之表面添加少於銅之少量銘與錄的鋼養錄合金電 鍍之粗化處理方法（例如泉昭牲 曰 1抝如苓…特開平2_292894號公報）。但 是’藉由相關之粗化處理之銅荡，有關蝕刻性、鹼敍刻性 以及耐酸性雖為良好， 平9 8788”“ 口扣出有以下缺點(例如參照特開 = _ 報）而無法實用化.·使用丙賴系黏著劑時之 =、剝::度降低’又耐氧化性亦不足，色調亦無法達到 ,，、、色，為命色〜焦茶色。 之=方、Γ相關之所進行之改良研究，揭示有如下 之^相^.於㈣之表面，施加銅相對於銅量1/10左右 銘·相對於銅量⑽左右之鎳的合金電鑛之後，於 成鈷-鎳合金電鍍層， /、上形 9-m88m 成料㈣（例如參照特開平 9 87889 :二/)’ 3戈者形成鋅-鎳電鍍層(例如參照特開平 Γ=)之3層構造之處理方法；或者，於銅落之表 =由:相對於銅量ιη。左右之…於銅 之錄的合金電鑛之粗化處理後，形成 = 辞電鑛層⑼如參照特開平8_335775號公報)又’曰或者進；^成 鎳電鍍層(例如參照特開平8 : 理方法。牿則η 1 0現a報）之3層構造之處 改善伴隨半導=有該等之方法作為銅箱處理方法，其 程序中進行=::Γ、高積體化洲 埶產生而、“ 溫度’以及因機器使用中之 之銅箱與樹脂基材間之接合力降低，且進一 91051.doc 1286512 步改善耐熱剝離性。 仁疋，右採用上述3層構造之改良提議銅箔作為〇〇^使 用’則存在有如下之缺點。 即，製造藉由上述銅箔而滿足精細圖案化之要求的佈線 板，並於該佈線板上裝載^，但為於佈線板上裝載^，有 必要於佈線板上之銅箱電路中裝載焊接球。為於鋼箱上裝 載違焊接球，為提高與焊料之密著性，於銅箱上實施錫電 鍍。產生如下之現象：該錫電鍍程序中之錫電鍍液溶解設 置於鋼落表面之前述粒子，且明顯減弱銅箱與佈線板之剝 離強度。 【發明内容】 〃本务Θ係用於解決如此之先前技術之問題點者，其目的 係提供一種晶片軟膜接合用銅落，該晶片軟膜接合用銅猪 具有高㈣㈣，電路圖案之底線直線性優異，且形成電 路圖案之銅泊之鋼粒子不會殘留於樹脂中，可製成精細圖 案，於裝載焊接球之處理時不會引起銅猪與樹月旨基板之黏 著力降低，視覺辨識性優異，並便於於精細圖案上裝載ic。 本發明之晶片軟膜接合用銅箔，其特徵在於··於銅箔之 至少一面，設置有包含合金組成為鈷、鎳之含有量等於或 夕於銅之銅-鈷-鎳合金之合金微細粗化粒子層。 較好的是於前述合金微細粗化粒子層之上，實施防銹處 理。 又，較好的疋於前述合金微細粗化粒子層之上，實施矽 燒偶合劑處理。 91051.doc 1286512 如此，可藉由將設置於銅结 冶表面之5金微細粗化粒子之 表面實施防銹處理及/或偶合 如连丨〜斤 d處理，抑制銅箔之氧化、變 色。 【實施方式】 以下，關於本發明之晶片軟 稱為COF箔）之實施方式進行說 膜接合（COF)用銅箔（以下亦 明。 ，設置有包含 -始-鎳合金之 本實施方式之COF箔，於鋼箔之至少一面 合金組成為鈷、鎳之含有量等於或多於銅之銅 合金微細粗化粒子層。 上述之本實施方式之合金微細粗化粒子層之電鑛合金組 成係··先前之電鍍合金組成為鈷、鎳之添加量都少於銅卜 因此作為⑽箔未必可滿足，對此轉換想法，與銅相比， 話、鎳之量都不予限制，進行各種實驗之後，著眼於藉由 與銅相比，鈷、鎳之添加量都多於先前考慮之添加量，可 獲得可滿足作為⑽用箱之鋼箱，進而反複進行實驗研 究，基於其結果而成者；至少於銅箔與樹脂基板黏著之面 上^又置包、鎳之含有量等於或多於銅之銅__始_鎳合金 之合金微細粗化粒子層時，更加具體說來，將附著於每銅箔 1 dm2之合金微細粗化粒子層之各組成設定為5〜12 mg/dm2 銅-6〜13 mg/dm2鈷-5〜12 mg/dm2鎳時，可成功獲得具有高蝕 刻因數，電路圖案之底線直線性優異，且形成電路圖案之 銅泊之銅粒子不會殘留於樹脂中，可製成精細圖案，視覺 辨識性優異之C〇F用之銅箔者。 又將於銅箔表面附著微細粗化粒子之銅箔貼合於聚醯 1286512 亞胺樹脂基板上，㈣由_形成f路之c〇F(基板），裝載 於1C上並4⑽^連接銅箱電路與^之程序中，於銅荡 上實施錫電鐘。該錫電鑛程序中，錫電鑛液之溫度非常高 時，存在有引起電鐘液侵入銷箱與樹腊基板之間的所謂下 切現象，對於該料’有必要將上述微細粗化粒子合金組 成作成無法引起下切者。 吾人等關於該點亦進行研究，對於不會引起下切現象之 微、、、田粗化粒子中之合金組成進行研究，發現如下結果：較 好是可藉由相對於Cu之存在量i mg/dm2箱時，co設定為 1·2〜2.2mg/dm2箱，Ni設定為猪之組成，而抑 制下切現象；更好的是可藉由相對於以之存在量i mg/dm2 箔時，Co設定為ΐ·5〜1·9 mg/dm2箱，Ni設定為1.3〜1.7 mg/dm2 箔之組成，而更確實地抑制下切現象，不會引起藉由裝載 焊接球之處理而造成銅箔與樹脂基板之黏著力降低。 更具體說來，如上所述，使合金微細粗化粒子層之銅箔表 面之附著量設為5〜12 mg/dm2銅-6〜13 mg/dm2錄-5〜12 mg/dm2 鎳之範圍即可。設定如此之範圍之理由係主要基於以下之 實驗結果者。 1 ·銅之附著量 5 mg/dm2以下，對於蝕刻液之溶解性變差，蝕刻剩餘物 殘留。 12 mg/dm2以上，耐熱性變差。 2 ·始之附著量 6 mg/dm2以下，對於蝕刻液之溶解性變差，蝕刻剩餘物 91051.doc -10 - 1286512 殘留。 無法確實地抑制下切現象。 對於蝕刻液之溶解性變差，蝕刻剩餘物 13 mg/dm2以上，無法確實地抑制下切現象 3.鎳之附著量 5 mg/dm2 以下 12 mg/dm2 以上 殘留。 實施例1〜3 广作為銅箱之電解銅箱；古河circuit foil公司靠 )表面藉由銅、姑、錄合金電鍛，形成合金微細粗化米 子層。 電鍍液組成以及電鍍條件：
Cu 2 g/1 Co 8 g/1 Ni 8 g/1 硫酸銨 4〇 g/1 硼酸 2〇 g/1 pH值 3.5 溫度 40°C 電流密度 15 A/dm 根據上述條件藉由改變带 面之合金組成如表〗所示、又日、間，製成之COF用銅箔. 有量以mg/dm2之單位# —表1中，將銅、鈷以及鎳之各/ 括弧内。 將對於鋼作為1時之比率表示；? 91051.doc 1286512 (表l) 實施例 1 録之含有量 氣之含有詈 1 2 12.95 (1.66) 1135(1.45)— 3 6.67η — 11.02(1.67) 9.44(1.43) -- 10.95 (1.66、 9.69 (1.47、 實施例4 於作為鋼箱之輥軋鋼箱（日本製箱公司製造）表面，藉由 銅姑鎳合金電鍍，形成合金微細粗化粒子層。 電鍍液組成以及電鍍條件
Cu 2 g/1 Co 8 g/1 Ni 8 g/1 硫酸銨 40 g/1 棚酸 20 g/1 PH值 3.5 溫度 40°C 電流密度 15 A/dm2
根據上述條件製成之C〇F用銅箔表面之合金組成如表2 所示，可作成包含RZ:0.50、Ra:〇.〇6之平滑表面之銅箔。表 2中，將銅、鈷以及鎳之各含有量以mg/dm2之單位表示，將 對於鋼作為1時之比率表示於括弧内。 始之含有量 鎳之含有量 鋼之含有量 ;進行κ施例1〜4之表面處理之合金微細粗化粒子 分目之表面上，以高溫高壓黏著Α廠商製造之聚醯亞】 、雄著性良好’然後於銅箔表面上黏貼並银刻乾軟》 91051.doc -12- 1286512 蝕刻抗蝕劑，製成COF用樹脂基板。製作該COF用樹脂基板 時，完成之COF用樹脂基板係電路不會成為波浪起伏之形 狀，電路之直線性頗佳，精細圖案性優異。於排列1C之基 板上，確認1C並將該樹脂基板進行位置吻合，易於自軟膜 上確認1C之位置，並可正確連接1C與樹脂基板電路。 然後，於進行實施例1〜4之表面處理之微細粗化粒子附著 銅箔表面上，以高溫高壓黏著B廠商製造之聚醯亞胺軟膜， 密著性良好，然後於銅箔表面上黏貼並蝕刻乾軟膜蝕刻抗 蝕劑，製成COF用樹脂基板。製作該COF用樹脂基板時，完 成之COF用樹脂基板係電路不會成為波浪起伏之形狀，電 路之直線性頗佳，且精細圖案性優異。於排列1(：：之基板上， 碟認1C並將該樹脂基板進行位置吻合，易於自軟膜上確認 1C之位置，並且可正確連接ZC與樹脂基板電路。 黏著銅箔之聚醯亞胺樹脂根據其提供廠商，於色調或與 銅箔之密著力等性能上，存在有若干差異，但實施例1〜4 之銅羯黏合於任一廠商之聚醯亞胺軟膜上，進行蝕刻並製 成電路後，測定確認1C位置之視覺辨識性以及兩者之密著 力等’結果係滿足於如上所述要求者。 再者，於根據實施例1、2所得之銅羯之合金微細粒子層 表面上，進一步實施鉻酸鹽防銹處理以及矽烷偶合劑處 理，測定視覺辨識性以及密著力等，因而可確認滿足之特 性。 ' 上述之本發明具有如下之效果··具有高蝕刻因數，電路 圖案之底線直線性優異，且形成電路圖案之銅箔之銅粒子 91051.doc -13- 1286512 不會殘留於樹脂中，可製成精細圖案，不會引起因形成焊 接球而造成銅箱與樹脂基板之黏著力降低，且視覺辨識性 優異，並便於於精細圖案上裝載ic等。 91051.doc -14-
Claims (1)
1286备(J^03807號專利申請案 f~ --：~ 中文申請專利範圍替換本(％年6月） ％年厶月修嫩正替換頁 拾、申請專利範圍： L""---J i.-種晶片軟膜接合用銅落，其特徵在於：於銅箱之至少 一面’設置有包含銘、錄之含有量等於或多錢之銅、 鈷、錄合金之合金微細粗化粒子層，其中銅：钻：錄之 總量比為1 : 1.2〜2.2 : 1.0〜2.0。 2. 如申請專利範圍第w之晶片軟膜接合用㈣，其中於設 置於前述銅箔表面之前述合金微細粗化粒子層之上，實 施防録處理。 I 3. 如申請專利範圍第}項之晶片軟膜接合用銅箔，其中於設 置於前述銅箔表面之前述合金微細粗化粒子層之上，實 施矽烧偶合劑處理。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0650794B2 (ja) | 1989-05-02 | 1994-06-29 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔の処理方法 |
| US5019222A (en) | 1989-05-02 | 1991-05-28 | Nikko Gould Foil Co., Ltd. | Treatment of copper foil for printed circuits |
| JP2717911B2 (ja) * | 1992-11-19 | 1998-02-25 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔及びその製造方法 |
| JP2875187B2 (ja) | 1995-06-08 | 1999-03-24 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔の処理方法 |
| JP2875186B2 (ja) | 1995-06-08 | 1999-03-24 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔の処理方法 |
| JP3367805B2 (ja) | 1995-09-28 | 2003-01-20 | 株式会社日鉱マテリアルズ | 印刷回路用銅箔の処理方法 |
| JP2849059B2 (ja) | 1995-09-28 | 1999-01-20 | 日鉱グールド・フォイル株式会社 | 印刷回路用銅箔の処理方法 |
| JP3258308B2 (ja) * | 2000-02-03 | 2002-02-18 | 株式会社日鉱マテリアルズ | レーザー穴開け性に優れた銅箔及びその製造方法 |
| JP3394990B2 (ja) * | 2000-11-27 | 2003-04-07 | 古河サーキットフォイル株式会社 | 金属複合体シート、それを用いた回路基板用の積層板 |
| CN1217564C (zh) * | 2001-05-14 | 2005-08-31 | 日本电解株式会社 | 经糙化处理的铜箔及其制造方法 |
-
2003
- 2003-02-17 JP JP2003038290A patent/JP4115293B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-13 US US10/777,039 patent/US6939622B2/en not_active Expired - Fee Related
- 2004-02-16 KR KR1020040010140A patent/KR101090197B1/ko active IP Right Grant
- 2004-02-16 EP EP20040003433 patent/EP1448035B1/en not_active Expired - Lifetime
- 2004-02-16 DE DE200460001790 patent/DE602004001790T2/de not_active Expired - Lifetime
- 2004-02-17 TW TW93103807A patent/TWI286512B/zh not_active IP Right Cessation
- 2004-02-17 CN CNB2004100055458A patent/CN100359994C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1523951A (zh) | 2004-08-25 |
| EP1448035B1 (en) | 2006-08-09 |
| DE602004001790T2 (de) | 2007-08-23 |
| EP1448035A1 (en) | 2004-08-18 |
| CN100359994C (zh) | 2008-01-02 |
| TW200427576A (en) | 2004-12-16 |
| JP4115293B2 (ja) | 2008-07-09 |
| US20040161627A1 (en) | 2004-08-19 |
| JP2004244710A (ja) | 2004-09-02 |
| DE602004001790D1 (de) | 2006-09-21 |
| KR101090197B1 (ko) | 2011-12-07 |
| US6939622B2 (en) | 2005-09-06 |
| KR20040074940A (ko) | 2004-08-26 |
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